60H3LL- [STMICROELECTRONICS]
N-channel 30V - 0.004ohm - 15A - PowerSO-8 STripFET Power MOSFET for DC-DC conversion; N沟道30V - 0.004ohm - 15A - PowerSO -8的STripFET功率MOSFET用于DC-DC转换
| 型号： | 60H3LL- |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.004ohm - 15A - PowerSO-8 STripFET Power MOSFET for DC-DC conversion |
| 文件： | 总12页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STSJ60NH3LL
N-channel 30V - 0.004Ω - 15A - PowerSO-8™
STripFET™ Power MOSFET for DC-DC conversion
General features
Type
V
R
I
D
DSS
DS(on)
(2)
STSJ60NH3LL
30V
<0.0057Ω
15A
■ Optimal R
x Qg trade-off @ 4.5 V
DS(on)
■ Conduction losses reduced
■ Improved junction-case thermal resistance
■ Low threshold device
PowerSO-8™
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
The exposed slug reduces the Rthj-c improving
the current capability.
Internal schematic diagram
Applications
■ Switching application
DRAIN CONTACT ALSO ON THE BACKSIDE
Order codes
Part number
Marking
Package
Packaging
STSJ60NH3LL
60H3LL-
PowerSO-8™
Tape & reel
April 2006
Rev 1
1/12
www.st.com
12
Contents
STSJ60NH3LL
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STSJ60NH3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
V
Drain-source voltage (V = 0)
30
± 16
60
V
V
DS
GS
Gate- source voltage
GS
(1)
I
Drain current (continuous) at T = 25°C
A
D
C
I
Drain current (continuous) at T = 100°C
37.5
15
A
D
C
(2)
I
Drain current (continuous) at T = 25°C
A
D
C
I
Drain current (continuous) at T = 100°C
9.4
60
A
D
C
(3)
(1)
(2)
I
Drain current (pulsed)
A
DM
P
P
Total dissipation at T = 25°C
50
W
W
tot
tot
C
Total dissipation at T = 25°C
3
C
T
Storage temperature
stg
-55 to 150
°C
Tj
Operating junction temperature
1. This value is rated according to Rthj-c
2. This value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case (drain) Max
Rthj-amb Thermal resistance junction-ambient Max
2.5
42
°C/W
°C/W
3/12
Electrical characteristics
STSJ60NH3LL
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test condictions
Min.
Typ.
Max. Unit
Drain-source
V
I
= 250 µA, V = 0
30
V
(BR)DSS
D
GS
breakdown voltage
V
V
= Max rating
1
I
Zero gate voltage
µA
µA
DS
DSS
drain current (V = 0)
= Max rating @125°C
10
GS
DS
GS
DS
Gate-body leakage
I
V
V
= ± 16V
±100
nA
V
GSS
current (V = 0)
DS
V
Gate threshold voltage
= V , I = 250µA
1
GS(th)
DS(on)
GS D
V
V
= 10V, I = 7.5A
0.004 0.0057
0.005 0.0075
Ω
Ω
Static drain-source on
resistance
GS
GS
D
R
= 4.5V, I = 7.5A
D
Table 4.
Symbol
Dynamic
Parameter
Test condictions
Min. Typ.
Max. Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
1810
565
41
C
pF
pF
pF
iss
C
V
=25V, f=1MHz, V = 0
oss
DS
GS
C
rss
18
4.8
5.3
24
V
V
=15V, I =15A
Q
Total gate charge
Gate-source charge
Gate-drain charge
nC
nC
nC
DD
D
g
Q
Q
=4.5V
gs
gd
GS
(see Figure 13)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
R
Gate input resistance
0.5
1.5
3
Ω
G
4/12
STSJ60NH3LL
Electrical characteristics
Min. Typ. Max. Unit
Table 5.
Symbol
Switching times
Parameter
Test condictions
V
= 15V, I = 7.5A
DD
D
8
ns
ns
t
Turn-on delay time
Rise Time
d(on)
R
= 4.7Ω , V = 10V
G
GS
t
65
r
(see Figure 12)
V
= 15V, I = 7.5A
DD
D
38
20
ns
ns
t
Turn-off delay time
Fall time
d(off)
R
= 4.7Ω , V = 10V
G
GS
t
f
(see Figure 12)
Table 6.
Symbol
Source drain diode
Parameter
Test condictions
Min Typ. Max Unit
15
60
A
A
I
Source-drain current
Source-drain current (pulsed)
SD
I
SDM
(1)
V
Forward On Voltage
I
I
= 15A, V = 0
1.3
V
SD
SD
GS
22
32
ns
nC
A
= 15A, di/dt = 100A/µs
= 15V, T = 25°C
t
Reverse recovery time
Reverse recovery charge
Reverse recovery current
SD
rr
Q
V
rr
RRM
DD
j
I
(see Figure 17)
1.9
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STSJ60NH3LL
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Normalized B
vs temperature
Figure 6. Static drain-source on resistance
VDSS
6/12
STSJ60NH3LL
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STSJ60NH3LL
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STSJ60NH3LL
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STSJ60NH3LL
PowerSO-8™ MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45° (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
2.79
0.050
0.150
0.110
e3
e4
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8° (max.)
10/12
STSJ60NH3LL
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
12-Apr-2006
1
First release
11/12
STSJ60NH3LL
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