AIS1200DSTR [STMICROELECTRONICS]
SPECIALTY ANALOG CIRCUIT, PDSO16, ROHS COMPLIANT, PLASTIC, SOP-16;
| 型号： | AIS1200DSTR |
| 厂家： | 
ST |
| 描述： | SPECIALTY ANALOG CIRCUIT, PDSO16, ROHS COMPLIANT, PLASTIC, SOP-16 CD 光电二极管 |
| 文件： | 总14页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIS1200DS
MEMS single-axis satellite acceleration sensor
with DSI 2.02 interface
Preliminary data
Features
■ 6.5 to 30 V single-supply operation
■ -20 V reverse battery survivability
■ 10-bit data output DSI 2.02 compliant
■ Embedded voltage regulator
■ Customizable daisy-chain address
■ Embedded self-test
SO16W
■ Automotive AEC-Q100 qualified
®
■ ECOPACK compliant
■ Extended temperature range: -40 °C to
The AIS120DS acquisition chain is composed of
+125 °C
a C/V nverter, a full-differential charge amplifier,
st
rd
a 1 -order LPF @ 1.6 KHz, a 3 -order LP Bessel
filter @ 360 Hz and a second charge amplifier to
adapt the dynamic range to SAR A/D converter
input.
Applications
■ Airbag DSI systems
■ Vibration/impact monitoring
The differential capacitance of the sensor is
proportional to the proof mass displacement;
thus, by sensing the differential capacitance, the
position of the sensor is determined. Since the
mass position is known and the position is related
to the input acceleration, the input acceleration
can be easily deduced.
Description
The AIS1200DS is a satele acceleration sensor
with a single-axis sesing element and an IC
interface capable of providing acceleration
information to eternal applications through a
225 kbps DSI 2.02 interface.
The device is available in a 300 mils plastic SOIC
package with reverse frame forming for EMC
enhancement, and has an operating temperature
range from -40 °C to +125 °C.
The sesing element is manufactured using a
ddicated process developed by ST to produce
inertial sensors and actuators in silicon.
The IC interface is manufactured using a BCD
SOI process that allows a high level of integration
and specific control of parasitic currents.
Table 1.
Device summary
Operating temperature
Order code
g-range
Package
Packing
range [°C]
AIS1200DS
200g
200g
-40 to +125
-40 to +125
SO16W
SO16W
Tubes
AIS1200DSTR
Tape and reel
October 2010
Doc ID 18130 Rev 1
1/14
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
14
Contents
AIS1200DS
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
SO16W pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Mechanical and electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
2.2
2.3
Mechanical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Control timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
Factory calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
5
6
Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
Doc ID 18130 Rev 1
AIS1200DS
Block diagram and pin description
1
Block diagram and pin description
1.1
Block diagram
Figure 1.
AIS1200DS block diagram
BUSIN
BUSOUT
High side Driver
HCAP
Rectifier
3V3 Voltage
PRE-Regulator
POR
Bus Switches
Charge
3V3
Main
Regulator
Pump
REGOUT
Analog
supply
HV-Section
Voltage
&
Current
reference
Response
Current
Generator
Command
Voltage
Receiver
LV-Section
Voltage
refere
Self
T
Charge
256 bit
Flash
Memory
DSI
Digital
Core
MEMS
Reading
Chain
12.25MHz
Oscillator
Pump
10 BIT
SAR
A/D
360Hz
III° Bessel
ReservedE
LPF
Digital & Power GND
Analog GND
RTNIN
RTNOUT
Low side Driver
AM08536v1
1.2
SO16W pin information
Figure 2.
Pin connection
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"53/54
24.).
24./54
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Doc ID 18130 Rev 1
3/14
Block diagram and pin description
AIS1200DS
Table 2.
Pin#
Pin description
Name
Function
1
2 to 10
11
REGOUT
NC
Internal regulator output
Leave unconnected
Reserved
RTNOUT
RTNIN
Connect to RTNIN
12
Low side bus - slave side
Low bus - master side
Hi side bus - slaves side
Hi side bus - master side
Autarchy power supply
13
14
BUSOUT
BUSIN
15
16
HCAP
4/14
Doc ID 18130 Rev 1
AIS1200DS
Mechanical and electrical specifications
2
Mechanical and electrical specifications
2.1
Mechanical characteristics
Table 3.
Mechanical characteristics: V
=> 6.5V to V
<= 30V, T => -40°C to T <=
HCAP L H
HCAP
125°C, unless otherwise noted
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Full-scale range
(including errors)
FS
So
235
g
Sensitivity
0.49
g/LSb
TA = 25°C
TL <= TA <= TH
-5
5
Sensitivity change vs
temperature
TCSo
Off
%
TBD
488
TBD
TBD
536
TBD
TA = 25°C
512
5
0.3
Zero-g level offset (1)
LSb
TL <= TA <= TH
Best fit straight line
NL
F0
Non linearity(2)
% FS
KHz
MEMS resonant frequency
19.6
Deflection
DELTADEF
30
g
(Self-test - offset, TA = 25°C)
TA = 25°
-10
TBD
-40
10
%
%
DEF
TOP
Deflection range
TL <= TA <= TH
TBD
+125
Operating temperature range
°C
1. Zero-g level offset (10-bit representation).
2. Verified in characterization, not 100% tested production.
Doc ID 18130 Rev 1
5/14
Mechanical and electrical specifications
AIS1200DS
2.2
Electrical characteristics
T => -40°C to TH <= 125 °C, unless otherwise noted.
A
(1)
Table 4.
Symbol
Electrical characteristics
Parameter
Supply voltage
OUTPUT range 10bit
Test conditions
Min.
Typ.
Max.
Unit
VHCAP
RNG
6.5
32
30
992
32
V
LSb
LSb
LSb
V
Normal
FLTLOW Error code
FLTHIGH Error code
Low margin
High margin
0
992
6.1
6.3
15
1023
6.5
6.6
200
7
VHLVD
VHLVR
VHLVH
IQ
VHCAP undervoltage detection
VHCAP recovery threshold
VHCAP detection hysteresis
HCAP quiescent current
BUSIN, BUSOUT, RTNOUT
V
mV
mA
V
VHCAP = 25 V
VBUS
-20
30
VREGOUT REGOUT output voltage
3.3
V
VRLVD
VRLVR
VRLVH
VREGOUT undervoltage detection
2.9
3
3.1
3.2
120
11
V
VREGOUT recovery threshold
VREGOUT detection hysteresis
V
5
mV
mV
mV
mV
mV
nF
mΩ
Ω
REGLine REGOUT static line regulation
REGLoad REGOUT static load regulation
DREGLine Dynamic line regulation
VHCAP = 6.5 V to 30 V
ILoad = 0 to 30 mA
11
CREG = 47 nF, VHCAP = 5 V/µs
CREG = 47 nF, ILoad = 2 mA/µs
15
DREGLoad Dynamic load reguon
30
CREG
ESR
Capacitor n REGOUT(2)
CREseries resistance(2)
Rectifier forward resistance
Rectifier leakage current
47
2600
700
2.4
100
RFW
RLE
µA
VBUSIN=7 V÷26 V;
IBUSIN=-15 mA
0.7
V
V
Rectifier voltage drop
(VBUSIN - VHCAP)
RDROP
VBUSIN=7 V÷26 V;
IBUSIN=-100 mA
0.9
IBIAS
VTHL
VTHH
VHYS
VHYF
IRES
BUSIN bias current
VBUSIN=8 V; VHCAP=9 V
100
µA
V
BUSIN logic threshold low
BUSIN logic threshold high
BUSIN hysteresis signal
BUSIN hysteresis frame
BUSIN response current
3
6
V
30
90
mV
mV
mA
Ω
100
300
VBUSIN=1.0V
11
SWRES BUS switches resistance
3.5
6/14
Doc ID 18130 Rev 1
AIS1200DS
Mechanical and electrical specifications
(1)
Table 4.
Symbol
Electrical characteristics
Parameter
(continued)
Test conditions
Min.
Typ.
Max.
Unit
Deflection
DELTADEF
200 g range
61
LSb
(self-test - offset, TA = 25°C)
TA = 25°C
-10
TBD
-40
10
%
%
DEF
TOP
Deflection range
TL <= TA <= TH
TBD
+125
Operating temperature range
°C
1. All voltage levels are referred to RTNIN voltage.
2. Verified by characterization, not guaranteed by production testing.
Doc ID 18130 Rev 1
7/14
Mechanical and electrical specifications
AIS1200DS
2.3
Control timing
Table 5.
Symbol
Control timing
Parameter
Conditions
Min
Typ
Max
Unit
tUVR
tCON
VHCAP, VREGOUT undervoltage mask time
A/D conversion time
3.2
7.6
µs
µs
30
6
1 mA to 9 mA and
v.v.
tITR
BUSIN, BUSOUT current transition response
8
mA/µs
tBS
tBIT
tTO
BUS init to switch closing delay
Signal bit transition time
500
200
8
µs
µs
4.4
2
Signal loss time before reset
TMAX out of frame
ms
IBUS => 7
mA@BUSIN<=VTHL
tRSPH BUSIN timing to response current @ signal Hi
tRSPL BUSIN timing to response current @ signal Low
2.5
2.5
µs
µs
IBUS <= 5
mA@BUSIN<=VTHH
tFSI
tFSR
tFSO
Interframe separation time following init
Interframe separation time following
BS=1
BS0
4x tBIT
4x tBIT
4x tBIT
324
µs
µs
Interframe separation time following other cmd
µs
BWOUT Low pass filter 3-pole bessel filter
360
12.25
67
396
Hz
MHz
%
fOSC
DCH
DCL
Internal oscillator frequency
Logic duty cycle
Logic “1”
Logic “0”
Logic duty cycle
33
%
8/14
Doc ID 18130 Rev 1
AIS1200DS
Absolute maximum ratings
3
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 6.
Symbol
Absolute maximum ratings
Ratings
Min
Typ
Max
Unit
VHCAP
VBUS
Supply voltage(1)
BUSIN, BUSOUT, RTNOUT(1)
-0.3
-50
50
50
50
4.6
1
V
V
VRECTIFIER HCAP-BUSIN(1)
-0.3
V
VREGOUT Voltage applied to REGOUT(1)
V
IPEAK
IMAX
BUS and HCAP current for a time <=1s
BUS and HCAP continuous current
Acceleration before mechanical stop
Mechanical shock device powered
Mechanical shock device unpowered
Drop shock survivability
A
500
mA
g
AMAX
APOW
AUNP
hDROP
4000
TBD
TBD
1.2
2
g
g
m
ESD protection HBM (Low voltage pins: res; TESTE
ESD protection HBM (Hi voltage pins: all remaining pins)
ESD protection HBM (system level: all pins)
CDM
kV
kV
kV
kV
kV
°C
°C
4
ESD
2
TBD
TBD
MM
TSTG
Tj
Storage temperature range
-40
-40
125
150
Junction temperature range
1. Voltae referred to RTNIN.
This is a mechanical shock sensitive device, improper handling can cause
permanent damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages
to the part
Doc ID 18130 Rev 1
9/14
Absolute maximum ratings
AIS1200DS
3.1
Factory calibration
The IC interface is factory-calibrated for sensitivity (So) and Zero-g level (Off).
The trimming values are stored inside the device in a non volatile structure. Any time the
device is turned on, the trimming parameters are downloaded into the registers to be
employed during the normal operation. This allows the user to employ the device without
further calibration.
10/14
Doc ID 18130 Rev 1
AIS1200DS
Application hints
4
Application hints
Figure 3.
AIS1xxxDS electrical connection
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Typical configuration where BUSOUT and RTNOUT are connected to the satellite daisy-
chain and BUSIN RTNIN is either connected to the previous satellite or DSI master. C
is actually the reservoir of energy to power the internal voltage regulator and its value
depends on BUS communication levels and timing.
AUTH
I
Q(MAX) × TDATA(MAXcurrent)
CAUTH = -------------------------------------------------------------------------------------------------------------------------------
V
BUS(MAX) – (VHCAP(min) + RDROP(MAXcurrent))
The value of the capacitor on the voltage regulator output C
must be within the specified
REG
range to stabilize and filter the low voltage power supply circuit.
RTNIN acts as a local ground for the system (refer to Figure 3).
Doc ID 18130 Rev 1
11/14
Package information
AIS1200DS
5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Figure 4.
SO16W mechanical data and package dimensions
mm
inch
DIM.
OUTLINE AND
MECHANICAL DATA
MIN. TYP. MAX. MIN.
TYP. MAX.
0.104
A
A1
B
2.35
0.10
0.33
0.23
10.10
2.65 0.093
0.30 0.004
0.51 0.013
0.32 0.009
10.50 0.398
0.012
0.200
C
0.013
(1)
0.413
D
E
e
7.40
7.60 0.291
0.299
0.050
1.27
H
10.0
0.25
0.40
10.65 0.394
0.75 0.010
1.27 0.016
0˚ (min.), 8˚ (max.)
0.10
0.419
h
0.030
L
50
k
ddd
0.004
SO16 (Wide)
(1) “D” dimension does not include mold flash, protusions or gate
burrs. Mold flash, protusions or gate burrs shall not exceed
0.15mm per side.
0016021 C
12/14
Doc ID 18130 Rev 1
AIS1200DS
Revision history
6
Revision history
Table 7.
Date
21-Oct-2010
Document revision history
Revision
Changes
1
Initial release.
Doc ID 18130 Rev 1
13/14
AIS1200DS
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Doc ID 18130 Rev 1
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