AM0912-150 [STMICROELECTRONICS]
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS; 航空电子应用射频和微波晶体管
| 型号： | AM0912-150 |
| 厂家： | 
ST |
| 描述： | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM0912-150
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 150 W MIN. WITH 7.5 dB GAIN
BANDWIDTH = 255MHz
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
BRANDING
0912-150
AM0912-150
PIN CONNECTION
DESCRIPTION
The AM0912-150 is designed for specialized
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse for-
mats utilizing short pulse widths and high burst
or overall duty cycles.
The AM0912-150 is housed in the unique BIG-
PAC Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
300
16.5
35
Unit
Power Dissipation*
Device Current*
(TC ≤ 100°C)
W
A
VCC
TJ
Collector-Supply Voltage*
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
− 65 to +200
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
0.57
°C/W
*Applies only to rated RF amplifier operation
September 1992
1/6
AM0912-150
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVEBO
BVCES
ICES
IC = 60mA
IE = 10mA
IC = 100mA
VCE = 35V
VCE = 5V
IE = 0mA
IC = 0mA
55
3.5
55
—
65
—
—
—
—
V
V
—
—
V
25
—
mA
—
hFE
IC = 5A
20
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
150
45
Typ. Max.
POUT
f = 960 — 1215MHz
f = 960 — 1215MHz
f = 960 — 1215MHz
PIN 26.7W
VCC 35V
—
—
—
—
—
—
W
%
=
=
η
c
PIN 26.7W
VCC 35V
=
=
GP
PIN 26.7W
VCC 35V
7.5
dB
=
=
Note:
Pulse Format: 6.4 µS on 6.6 µS off; repeat for 3.3 ms, then off for 4.5125 ms
Duty Cycle: Burst 49.2% overall 20.8%
2/6
AM0912-150
TYPICAL PERFORMANCE
TYPICAL POWER INPUT, POWER
OUTPUT & COLLECTOR EFFICIENCY
vs FREQUENCY
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
VCC = 28-35V
PIN 26W
TC < 45°C
3/6
AM0912-150
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 26.7 W
VCC = 35 V
ZO* = 10 ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 960 MHz
• = 1000 MHz
M = 1050 MHz
• = 1150 MHz
H = 1215 MHz
2.1 + j 3.8
1.5 + j 3.1
1.2 + j 2.5
1.5 + j 2.4
1.7 + j 2.4
3.8 − j 3.6
3.0 − j 2.4
2.5 − j 2.0
2.0 − j 2.0
2.0 − j 2.5
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 26.7 W
VCC = 35 V
ZO* = 10 ohms
*Normalized Impedance
4/6
AM0912-150
TEST CIRCUIT
Ref: Dwg. No. C127513
5/6
AM0912-150
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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