AM83135-050 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-050 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总6页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-050
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
.
.
.
.
.
.310 x .310 2LFL (S064)
METAL/CERAMIC HERMETIC PACKAGE
POUT = 50 W MIN. WITH 5.2 dB GAIN
hermetically sealed
ORDER CODE
AM83135-050
BRANDING
83135-50
DESCRIPTION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
PIN CONNECTION
This device is characterized at 10 µsec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and tem-
peratures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal re-
sistance, refractory/gold metallization, and com-
puterized automatic wire bonding techniques en-
sure high reliability and product consistency (in-
cluding phase characteristics).
The AM83135-050 is supplied in the IMPAC Her-
metic Metal/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
Unit
W
A
312
8.0
Power Dissipation* (T ≤ 125°C)
C
Device Current*
VCC
TJ
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
48
V
°
C
250
°
C
TSTG
65 to +200
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
0.40
°C/W
*Applies only to rated RF amplifier operation
November 27, 1996
1/6
AM83135-050
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Typ.
—
Symbol
Test Conditions
Unit
Min.
55
Max.
—
BVCBO IC = 25mA
BVEBO IE = 5mA
BVCER IC = 25mA
IE = 0mA
IC = 0mA
RBE = 10W
VCE = 42V
IC = 3A
V
V
3.5
55
—
—
—
—
—
—
V
ICES
hFE
VBE = 0V
VCE = 5V
—
20
mA
—
30
300
DYNAMIC
Value
Typ.
Symbol
Test Conditions
Unit
Min.
50
Max.
POUT
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
PIN = 15W
PIN = 15W
PIN = 15W
VCC = 42V
VCC = 42V
VCC = 42V
—
—
—
W
%
η
30
—
—
c
GP
5.2
dB
Note:
Pulse Width = 10µSec
Duty Cycle = 10%
2/6
AM83135-050
TYPICAL PERFORMANCE
OUTPUT POWER vs
COLLECTOR EFFICIENCY vs
COLLECTOR SUPPLY VOLTAGE
FREQUENCY
OUTPUT POWER vs COLLECTOR
SUPPLY VOLTAGE
COLLECTOR EFFICIENCY
vs FREQUENCY
3/6
AM83135-050
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 15 W
VCC = 42 V
ZO* = 50 ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
16.5 + j 13.5
10.8 + j 5.5
6.7 + j 5.2
L = 3.1 GHz
M = 3.3 GHz
H = 3.5 GHz
7.7 − j 11.8
6.5 − j 7.2
3.8 − j 6.7
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 15 W
VCC = 42 V
ZO* = 50 ohms
*Normalized
4/6
AM83135-050
TEST CIRCUIT
All dimensions are in mils.
Substrate material: 25 mil thick Al2O3 (Er = 9.6)
C - 0.3 to 1.2 pF Johanson Gigatrim
L - 1 Turn #26 wire .80 I.D.
5/6
AM83135-050
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0221
UDCS No. 1011424 rev A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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6/6
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