BD138 [STMICROELECTRONICS]
PNP SILICON TRANSISTORS; PNP硅晶体管
| 型号： | BD138 |
| 厂家： | 
ST |
| 描述： | PNP SILICON TRANSISTORS |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD136
BD138/BD140
PNP SILICON TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
PNP TRANSISTOR
DESCRIPTION
The BD136, BD138 and BD140 are silicon
epitaxial planar PNP transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementary circuits.
The complementary NPN types are the BD135
BD137 and BD139.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BD138
-60
Unit
BD136
-45
BD140
-80
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
-45
-60
-80
-5
V
-1.5
A
ICM
IB
Collector Peak Current
-3
A
Base Current
-0.5
A
Ptot
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 oC
Total Dissipation at Tamb ≤ 25 oC
Storage Temperature
12.5
1.25
-65 to 150
150
W
W
oC
oC
Max. Operating Junction Temperature
1/4
June 1997
BD136/BD138/BD140
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
10
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
-0.1
-10
µA
µA
TC = 125 oC
IEBO
Emitter Cut-off Current VEB = -5 V
(IC = 0)
-10
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = -30 mA
for BD136
for BD138
for BD140
-45
-60
-80
V
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.05 A
VCE = -2 V
-0.5
-1
V
VBE
hFE
Base-Emitter Voltage
DC Current Gain
IC = -0.5 A
V
IC = -5 mA
IC = -0.5 A
IC = -150 mA VCE = -2 V
IC = -150 mA VCE = -2 V
for BD140 group 10
VCE = -2 V
VCE = -2 V
25
25
40
250
160
hFE
hFE Groups
63
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
2/4
BD136/BD138/BD140
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.040
0.039
0.606
TYP.
MAX.
0.307
0.445
0.035
0.030
0.106
0.050
0.629
A
B
10.5
0.7
10.8
0.9
b
b1
C
0.49
2.4
0.75
2.7
c1
D
1.0
1.3
15.4
16.0
e
2.2
3.8
0.087
0.150
e3
F
4.15
3
4.65
0.163
0.118
0.183
G
H
3.2
0.126
0.100
2.54
H2
2.15
0.084
H2
0016114
3/4
BD136/BD138/BD140
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express
written approvalof SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
. . .
4/4
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