BD241A [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | BD241A |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
3
2
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BD241A
BD242A
70
BD241B
BD241C
BD242C
115
BD242B
VCER
VCEO
VEBO
IC
Collector-Base Voltage (RBE = 100 Ω)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
90
V
V
60
80
100
5
V
3
A
ICM
IB
Collector Peak Current
5
A
Base Current
1
A
o
Ptot
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
40
2
W
W
oC
oC
o
Total Dissipation at Tamb ≤ 25 C
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
1/4
June 1997
BD241A/B/C/BD242A/B/C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.13
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = rated VCEO
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
0.2
mA
ICEO
Collector Cut-off
Current (IB = 0)
for BD241A/BD242A VCE = 30 V
for BD241B/BD242B VCE = 60 V
for BD241C/BD242C VCE = 60 V
0.3
0.3
0.3
mA
mA
mA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
V
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 0.6 A
1.2
1.8
V
VBE
hFE
Base-Emitter Voltage
DC Current Gain
IC = 3 A
VCE = 4 V
V
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
25
10
hfe
Small Signal Current
Gain
IC = 0.5 A
IC = 0.5 A
VCE = 10 V f = 1MHz
VCE = 10 V f = 1KHz
3
20
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
2/4
BD241A/B/C/BD242A/B/C
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
3/4
BD241A/B/C/BD242A/B/C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
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