BD910 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | BD910 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BD909
BD910
80
BD911
BD912
100
VCBO
VCEO
VEBO
IE,IC
IB
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
80
100
5
V
15
A
Base Current
5
90
A
o
Ptot
Tstg
Tj
W
oC
oC
Total Dissipation at Tc 25 C
≤
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
1/6
October 1999
BD909 / BD910 / BD911 / BD912
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.4
oC/W
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BD909/910
ICBO
Collector Cut-off
Current (IE = 0)
for
VCB = 80 V
VCB = 100 V
500
500
µA
µA
for BD911/912
o
Tcase = 150 C
for BD909/910
for BD911/912
VCB = 80 V
VCB = 100 V
5
5
mA
mA
BD909/910
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
for
for BD911/912
VCE = 40 V
1
1
mA
mA
V
CE = 50 V
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
for BD909/910
for BD911/912
80
100
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 0.5 A
IB = 2.5 A
1
3
V
V
VBE(sat)
Base-Emitter
IC = 10 A
IB = 2.5 A
2.5
V
Saturation Voltage
VBE
hFE
Base-Emitter Voltage
DC Current Gain
IC = 5 A
VCE = 4 V
1.5
V
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
40
15
5
250
150
fT
Transition frequency
IC = 0.5 A
VCE = 4 V
3
MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curves
2/6
BD909 / BD910 / BD911 / BD912
DC Current Gain (NPN type)
DC Current Gain (PNP type)
DC Transconductance(NPN type)
DC Transconductance(PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
3/6
BD909 / BD910 / BD911 / BD912
Base-EmitterSaturationVoltage (NPN type)
Base-EmitterSaturation Voltage (PNP type)
TransitionFrequency (NPN type)
TransitionFrequency (PNP type)
4/6
BD909 / BD910 / BD911 / BD912
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
5/6
BD909 / BD910 / BD911 / BD912
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
6/6
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