BF258 [STMICROELECTRONICS]
HIGH VOLTAGE VIDEO AMPLIFIERS; 高电压视频放大器
| 型号： | BF258 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE VIDEO AMPLIFIERS |
| 文件： | 总5页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF257
BF258-BF259
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION
The BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case.They are particularly designed for videooutput
stages in CTV and MTV sets, class A audio output
stages and drivers for horizontal deflection circuits.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Parameter
Unit
BF257 BF258 BF259
VCBO
VCEO
VEBO
IC
Collector-base Voltage (IE = 0)
160
160
250
300
300
V
V
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
250
5
V
100
mA
mA
W
ICM
Collector Peak Current
200
Pt ot
Tstg
Tj
Total Power Dissipation at Tamb ≤ 50 °C
Storage Temperature
5
– 55 to 200
200
°C
°C
Junction Temperature
October 1988
1/5
BF257-BF258-BF259
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
30
175
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cutoff Current
(IE = 0)
for BF257
for BF258
for BF259
VCB = 100 V
VCB = 200 V
VCB = 250 V
50
50
50
nA
nA
nA
V(BR) CBO Collector-base
Breakdown Voltage
for BF257
for BF258
for BF259
160
250
300
V
V
V
IC = 100 µA
(IE = 0)
V(BR)CEO
*
Collector-emitter
Breakdown Voltage
(IB = 0)
for BF257
for BF258
for BF259
160
250
300
V
V
V
IC = 10 mA
V(BR) EBO Emittter-base
Breakdown Voltage
IE = 100 µA
5
V
V
(IC = 0)
VCE (sat)
*
Collector-emitter
IC = 30 mA
IB = 6 mA
1
Saturation Voltage
hFE
fT
*
DC Current Gain
IC = 30 mA
IC = 15 mA
VCE = 10 V
VCE = 10 V
VCE = 30 V
25
Transition Frequency
Reverse Capacitance
90
3
MHz
pF
Cre
IC = 0
f = 1 MHz
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
DC Current Gain.
2/5
BF257-BF258-BF259
Collector Cutoff Current.
Transition Frequency.
Safe Operating Area.
Collector-base Capacitance.
Power Rating Chart.
3/5
BF257-BF258-BF259
TO39 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
12.7
TYP.
MAX.
MIN.
MAX.
A
B
D
E
F
G
H
I
0.500
0.49
6.6
8.5
9.4
0.019
0.260
0.334
0.370
5.08
0.200
1.2
0.9
0.047
0.035
L
45o (typ.)
D
A
G
I
H
L
P008B
4/5
BF257-BF258-BF259
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
相关型号：
BF259LEADFREE
Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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