BTA08A-800B [STMICROELECTRONICS]

8A TRIACS; 8A双向可控硅
BTA08A-800B
型号: BTA08A-800B
厂家: ST    ST
描述:

8A TRIACS
8A双向可控硅

可控硅 三端双向交流开关
文件: 总10页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BTA/BTB08 and T8 Series  
SNUBBERLESS, LOGIC LEVEL & STANDARD  
8A TRIACS  
MAIN FEATURES:  
A2  
A2  
A2  
Symbol  
Value  
8
Unit  
A
G
I
T(RMS)  
A1  
A1  
A2  
G
A2  
G
A1  
V
/V  
600 and 800  
V
DRM RRM  
2
DPAK  
(T8-B)  
D PAK  
(T8-G)  
I
5 to 50  
mA  
GT (Q )  
1
A2  
DESCRIPTION  
Available either in through-hole or surface-mount  
packages, the BTA/BTB08 and T8 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control operation in light dimmers, motor  
speed controllers,...  
A1  
A2  
IPAK  
(T8-H)  
G
A2  
The snubberless versions (BTA/BTB...W and T8  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. By using an internal ceramic pad,  
the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA08)  
TO-220AB  
(BTB08)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (full sine wave)  
A
T(RMS)  
DPAK / D PAK  
IPAK / TO-220AB  
Tc = 110°C  
8
TO-220AB Ins.  
F = 50 Hz  
Tc = 100°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
80  
84  
A
TSM  
F = 60 Hz  
t = 16.7 ms  
tp = 10 ms  
45  
50  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2000 - Ed: 3  
1/10  
BTA/BTB08 and T8 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESSand LOGIC LEVEL (3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
T8  
BTA/BTB08  
Unit  
T810 T835  
TW  
SW  
CW  
BW  
I
(1)  
mA  
V
I - II - III MAX.  
I - II - III MAX.  
10  
35  
5
10  
35  
50  
GT  
V
V
V
= 12 V  
R = 30 Ω  
L
D
D
1.3  
0.2  
GT  
V
= V  
R = 3.3 kI - II - III  
MIN.  
DRM  
L
GD  
(2)  
V
Tj = 125°C  
I
I = 100 mA  
MAX.  
MAX.  
15  
35  
10  
15  
35  
50  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
25  
30  
50  
60  
10  
15  
25  
30  
50  
60  
70  
80  
G
GT  
L
dV/dt (2)  
V
= 67 %V  
gate open  
D
DRM  
MIN.  
MIN.  
40  
400  
20  
40  
400  
1000  
V/µs  
Tj = 125°C  
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C  
(dV/dt)c = 10 V/µs Tj = 125°C  
5.4  
2.8  
-
-
-
3.5  
1.5  
-
5.4  
2.8  
-
-
-
-
-
A/ms  
Without snubber  
Tj = 125°C  
4.5  
4.5  
7
STANDARD (4 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB08  
Unit  
C
B
I
(1)  
I - II - III  
IV  
25  
50  
50  
100  
mA  
GT  
V
MAX.  
V
V
= 12 V  
R = 30 Ω  
D
D
L
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
DRM  
L
I
(2)  
L
I = 500 mA  
T
MAX.  
MAX.  
25  
50  
mA  
mA  
H
I
I
= 1.2 I  
I - III - IV  
II  
40  
80  
200  
5
50  
100  
400  
10  
G
GT  
dV/dt (2)  
V
= 67 %V  
gate open Tj = 125°C  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 3.5 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Tj = 25°C  
Value  
Unit  
V
(2)  
(2)  
I
= 11 A  
TM  
tp = 380 µs  
MAX.  
1.55  
0.85  
50  
V
V
TM  
V
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MAX.  
MAX.  
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
V
= V  
RRM  
5
DRM  
DRM  
MAX.  
I
1
RRM  
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/10  
BTA/BTB08 and T8 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (AC)  
°C/W  
th(j-c)  
DPAK / D PAK  
IPAK / TO-220AB  
1.6  
TO-220AB Insulated  
D PAK  
2.5  
45  
R
Junction to ambient  
°C/W  
th(j-a)  
S = 1 cm  
S = 0.5 cm  
DPAK  
70  
60  
TO-220AB  
TO-220AB Insulated  
IPAK  
100  
S = Copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Package  
Part Number  
Sensitivity  
Type  
600 V  
800 V  
BTA/BTB08-xxxB  
BTA/BTB108-xxxBW  
BTA/BTB08-xxxC  
BTA/BTB08-xxxCW  
BTA/BTB08-xxxSW  
BTA/BTB08-xxxTW  
T810-xxxB  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA  
50 mA  
25 mA  
35 mA  
10 mA  
5 mA  
Standard  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
DPAK  
Snubberless  
Logic level  
Logic level  
Logic level  
Logic level  
Snubberless  
10 mA  
10 mA  
35mA  
T810-xxxH  
IPAK  
T835-xxxB  
DPAK  
T835-xxxG  
T835-xxxH  
X
X
X
X
35 mA  
35 mA  
Snubberless  
Snubberless  
D PAK  
IPAK  
BTB: non insulated TO-220AB package  
3/10  
BTA/BTB08 and T8 Series  
ORDERING INFORMATION  
BT A 08 - 600 BW  
TRIAC  
SERIES  
SENSITIVITY &TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
C: 25mA STANDARD  
CW: 35mA SNUBBERLESS  
SW: 10mA LOGIC LEVEL  
TW: 5mA LOGIC LEVEL  
INSULATION:  
A: insulated  
B: non insulated  
VOLTAGE:  
600: 600V  
800: 800V  
CURRENT:8A  
T 8 10 - 600 B (-TR)  
TRIAC  
SERIES  
PACKAGE:  
B: DPAK  
CURRENT:8A  
G: D2PAK  
VOLTAGE:  
PACKING MODE:  
H: IPAK  
600: 600V  
800: 800V  
Blank:Tube  
-TR: DPAK / D2PAK  
Tape & Reel  
SENSITIVITY:  
10: 10mA  
35: 35mA  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
BTA/BTB08-xxxyz  
T8yy-xxxB  
BTA/BTB08xxxyz  
T8yyxxx  
2.3 g  
0.3 g  
0.3 g  
0.4 g  
1.5 g  
1.5 g  
250  
75  
Bulk  
Tube  
T8yy-xxxB-TR  
T8yy-xxxH  
T8yyxxx  
2500  
75  
Tape & reel  
Tube  
T8yyxxx  
T8yy-xxxG  
T8yyxxx  
50  
Tube  
T8yy-xxxG-TR  
T8yyxxx  
1000  
Tape & reel  
Note: xxx = voltage, yy = sensitivity, z = type  
4/10  
BTA/BTB08 and T8 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2-1: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
10  
9
10  
9
BTB/T8  
8
8
7
7
BTA  
6
5
4
3
2
1
0
6
5
4
3
2
IT(RMS)(A)  
Tc(°C)  
1
0
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
7
8
Fig. 2-2: RMS on-state current versus ambient  
temperature (printed circuit board FR4, copper  
thickness: 35µm),full cycle.  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
IT(RMS) (A)  
K=[Zth/Rth]  
3.5  
1E+0  
Zth(j-c)  
D2PAK  
DPAK/IPAK  
Zth(j-a)  
3.0  
(S=1cm2  
)
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1E-1  
DPAK  
(S=0.5cm2  
)
TO-220AB/D PAK  
Zth(j-a)  
1E-2  
Tamb(°C)  
tp(s)  
1E-3  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
50  
75  
100  
125  
Fig. 4: On-state characteristics (maximum  
values).  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
ITM (A)  
ITSM (A)  
100  
90  
80  
Tj=Tj max  
Tj max.  
Vto = 0.85 V  
Rd = 50 m  
t=20ms  
70  
One cycle  
60  
Non repetitive  
Tj initial=25°C  
50  
10  
Repetitive  
Tc=100°C  
40  
Tj=25°C  
30  
20  
10  
VTM(V)  
Number of cycles  
0
1
1
10  
100  
1000  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
5/10  
BTA/BTB08 and T8 Series  
Fig. 6: Non-repetitive surge peak on-state  
current for a sinusoidal pulse with width  
tp < 10ms, and corresponding value of I t.  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]  
ITSM (A),I t (A s)  
2.5  
1000  
Tj initial=25°C  
2.0  
IGT  
dI/dt limitation:  
50A/µs  
ITSM  
1.5  
100  
IH & IL  
1.0  
I t  
0.5  
tp (ms)  
Tj(°C)  
40 60  
10  
0.0  
-40 -20  
0.01  
0.10  
1.00  
10.00  
0
20  
80 100 120 140  
Fig. 8-1: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values). Snubberless & Logic Level Types  
Fig. 8-2: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values). Standard Types  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
2.0  
1.8  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
TW  
C
1.6  
B
1.4  
T835/CW/BW  
1.2  
1.0  
0.8  
T810/SW  
0.6  
0.4  
(dV/dt)c (V/µs)  
1.0 10.0  
(dV/dt)c (V/µs)  
1.0  
0.2  
0.0  
0.1  
10.0  
100.0  
0.1  
100.0  
2
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
Fig. 10: DPAK and D PAK Thermal resistance  
junction to ambient versus copper surface under  
tab (printed circuit board FR4, copper thickness:  
35 µm).  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
Rth(j-a) (°C/W)  
6
100  
90  
80  
70  
60  
50  
40  
30  
5
4
3
2
DPAK  
D PAK  
20  
10  
0
1
Tj(°C)  
S(cm )  
0
0
4
8
12 16 20 24 28 32 36 40  
0
25  
50  
75  
100  
125  
6/10  
BTA/BTB08 and T8 Series  
PACKAGE MECHANICAL DATA  
DPAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
Min.  
Max  
Min.  
Max.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
B2  
C
R
C2  
D
R
E
G
H
L2  
L4  
R
0.80 typ.  
0.031 typ.  
0.60  
1.00  
0.023  
0.039  
0.2 typ.  
0.007 typ.  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
DPAK (Plastic)  
6.7  
6.7  
3
3
1.6  
1.6  
2.3 2.3  
7/10  
BTA/BTB08 and T8 Series  
PACKAGE MECHANICAL DATA  
D PAK (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
E
C2  
L2  
L3  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
L2  
L3  
R
FLAT ZONE  
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
D PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
8/10  
BTA/BTB08 and T8 Series  
PACKAGE MECHANICAL DATA  
IPAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
A1  
A3  
B
2.2  
0.9  
2.4  
1.1  
0.086  
0.035  
0.027  
0.025  
0.204  
0.094  
0.043  
0.051  
0.035  
0.212  
0.033  
A
E
C2  
0.7  
1.3  
B2  
0.64  
5.2  
0.9  
L2  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.035  
D
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
H
B3  
L1  
C2  
D
B6  
L
A1  
B
V1  
E
6.4  
4.4  
15.9  
9
G
H
16.3 0.626  
B5  
C
L
9.4  
1.2  
1
0.354  
0.031  
G
A3  
L1  
L2  
V1  
0.8  
0.8  
0.031 0.039  
10°  
10°  
9/10  
BTA/BTB08 and T8 Series  
PACKAGE MECHANICAL DATA  
TO-220AB Ins.  
DIMENSIONS  
B
C
REF.  
Millimeters  
Inches  
b2  
Min. Typ. Max. Min. Typ. Max.  
L
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
F
3.75  
0.147  
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c2  
a1  
c1  
c2  
e
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
b1  
M
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
c1  
e
l2  
l3  
M
2.60  
0.102  
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of use ofsuch information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
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10/10  

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