BTA10-600BW [STMICROELECTRONICS]
10A TRIACS; 10A双向可控硅型号: | BTA10-600BW |
厂家: | ST |
描述: | 10A TRIACS |
文件: | 总6页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BTA/BTB10 Series
®
SNUBBERLESS™ & STANDARD
10A TRIACS
MAIN FEATURES:
A2
Symbol
Value
Unit
A
G
I
10
T(RMS)
A1
V
/V
600 and 800
25 to 50
V
DRM RRM
A2
I
mA
GT (Q )
1
DESCRIPTION
A1
A2
A1
A2
G
Available either in standard or snubberless
version, the BTA/BTB10 triac series is suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase control operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
G
TO-220AB Insulated
(BTA10)
TO-220AB
(BTB10)
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
RMS on-state current
(full sine wave)
TO-220AB
Tc = 105°C
A
T(RMS)
10
TO-220AB Ins.
F = 60 Hz
Tc = 95°C
t = 16.7 ms
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
105
100
A
TSM
F = 50 Hz
²
²
²
tp = 10 ms
55
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
Tj = 25°C
50
A/µs
V
I
= 2 x I , tr ≤ 100 ns
G
GT
V
/V
Non repetitive surge peak off-state
voltage
DRM RRM
V
/V
tp = 10 ms
tp = 20 µs
DSM RSM
+ 100
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
A
GM
P
Average gate power dissipation
1
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
April 2002 - Ed: 5A
1/6
BTA/BTB10 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ (3 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB10
Unit
CW
BW
I
(1)
mA
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
35
50
GT
V
V
V
= 12 V
R = 33 Ω
D
L
1.3
V
GT
V
0.2
= V
R = 3.3 kΩ
Tj = 125°C
V
GD
D
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
35
50
50
70
mA
mA
H
T
I
I
= 1.2 I
I - III
II
G
GT
L
60
80
dV/dt (2)
V
= 67 % V
gate open Tj = 125°C
Tj = 125°C
MIN.
MIN.
500
5.5
1000
9.0
V/µs
D
DRM
(dI/dt)c (2) Without snubber
A/ms
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB10
Unit
C
B
I - II - III
IV
25
50
50
100
mA
I
(1)
MAX.
GT
V
V
= 12 V
R = 33 Ω
D
L
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
D
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
25
40
80
200
5
50
50
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
100
400
10
V
= 67 %V
gate open Tj = 125°C
dV/dt (2)
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
V
(2)
(2)
I
= 14 A
tp = 380 µs
MAX.
MAX.
MAX.
1.55
0.85
40
V
V
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
RRM
5
DRM
RRM
DRM
MAX.
1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/6
BTA/BTB10 Series
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (AC)
TO-220AB
TO-220AB Insulated
TO-220AB
1.5
°C/W
th(j-c)
2.4
R
Junction to ambient
°C/W
th(j-a)
60
TO-220AB Insulated
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Sensitivity
Type
Package
600 V
800 V
BTA/BTB10-xxxB
BTA/BTB10-xxxBW
BTA/BTB10-xxxC
BTA/BTB10-xxxCW
X
X
X
X
X
X
X
X
50 mA
50 mA
25 mA
35 mA
Standard
Snubberless
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Snubberless
BTB: Non insulated TO-220AB package
ORDERING INFORMATION
BT A 10 - 600 BW (RG)
TRIAC
SERIES
PACKING MODE
Blank: Bulk
RG:Tube
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
INSULATION:
A: insulated
VOLTAGE:
600: 600V
800: 800V
B: non insulated
CW: 35mA SNUBBERLESS
CURRENT: 10A
OTHER INFORMATION
Part Number
Base
quantity
Packing
mode
Marking
Weight
BTA/BTB10-xxxyz
BTA/BTB10xxxyz
BTA/BTB10-xxxyz
2.3 g
2.3 g
250
50
Bulk
BTA/BTB10-xxxyzRG
Tube
Note: xxx = voltage, y = sensitivity, z = type
3/6
BTA/BTB10 Series
Fig. 1: Maximum power dissipation versus RMS
Fig. 2: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
12
11
10
9
8
13
12
11
10
9
BTB
BTA
8
7
7
6
5
4
3
2
1
0
6
5
4
3
2
Tc(°C)
IT(RMS) (A)
1
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance
Fig. 4: On-state characteristics (maximum
versus pulse duration.
values).
ITM (A)
K=[Zth/Rth]
100
1E+0
Tj max
Tj max.
Vto = 0.85 V
Rd = 40 mW
Zth(j-c)
1E-1
10
1
Zth(j-a)
Tj=25°C
tp (s)
VTM (V)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
Fig. 6: Non-repetitive surge peak on-state
number of cycles.
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
ITSM (A)
110
100
1000
Tj initial=25°C
90
80
t=20ms
dI/dt limitation:
50A/µs
One cycle
Non repetitive
Tj initial=25°C
ITSM
I²t
70
60
50
40
30
20
10
0
100
Repetitive
Tc=95°C
tp (ms)
Number of cycles
10
0.01
0.10
1.00
10.00
1
10
100
1000
4/6
BTA/BTB10 Series
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8: Relative variation ofcritical rate ofdecrease
ofmain current versus(dV/dt)c (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
2.0
1.8
C
2.0
1.6
IGT
B
1.4
1.5
1.2
BW/CW
IH & IL
1.0
1.0
0.8
0.5
0.6
(dV/dt)c (V/µs)
Tj(°C)
0.4
0.0
0.1
1.0
10.0
100.0
-40 -20
0
20
40
60
80 100 120 140
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
0
25
50
75
100
125
5/6
BTA/BTB10 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
B
C
b2
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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