BTA20C [STMICROELECTRONICS]
6-A Silicon Triacs For Power-Control and Power-Switching Applications; 6 -A硅双向可控硅对于电源控制和电源开关应用
| 型号： | BTA20C |
| 厂家： | 
ST |
| 描述： | 6-A Silicon Triacs For Power-Control and Power-Switching Applications |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA20 Series
®
20A TRIACS
SNUBBERLESS™
Table 1: Main Features
Symbol
A2
Value
Unit
IT(RMS)
20
A
G
A1
VDRM/VRRM
600 and 700
35 and 50
V
IGT (Q ) (max)
mA
1
DESCRIPTION
The BTA20 BW/CW triac family are high perform-
ance glass passivated chips technology.
The snubberless concept offer suppression of RC
network and it is suitable for application such as
phase control and static switching on inductive or
resistive load.
A1
A2
G
TO-220AB Insulated
Table 2: Order Codes
Part Numbers
BTA20-600BWRG
BTA20-600CWRG
BTA20-700BWRG
BTA20-700CWRG
Marking
BTA20-600BW
BTA20-600CW
BTA20-700BW
BTA20-700CW
Thanks to their clip assembly technique, they
provide a superior performance in surge current
handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500VRMS) complying with UL standards (File ref.:
E81734).
Table 3: Absolute Maximum Ratings
Symbol
IT(RMS)
Parameter
Value
20
Unit
Tc = 70°C
RMS on-state current (full sine wave)
A
F = 50 Hz
F = 60 Hz
tp = 10 ms
t = 10 ms
t = 8.3 ms
210
200
200
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
A
²
²
²
I t
I t Value for fusing
A s
Repetitive
F = 50 Hz
20
Critical rate of rise of on-state current
IG = 500 mA dIG/dt = 1 A/µs
Tj = 125°C
dI/dt
A/µs
Non repetitive
100
VDSM/VRSM
+ 100
V
DSM/VRSM
tp = 10 ms
Tj = 25°C
Non repetitive peak off-state voltage
V
IGM
VGM
tp = 20 µs
tp = 20 µs
Tj = 125°C
Peak gate current
4
A
V
Peak positive gate voltage
Average gate power dissipation
16
1
PG(AV)
Tj = 125°C
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
Storage junction temperature range
Operating junction temperature range
°C
February 2006
REV. 2
1/6
BTA20 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
BTA20
Symbol
Test Conditions
Quadrant
Unit
BW
CW
1
MIN.
MAX.
MAX.
2
IGT (1)
ALL
mA
VD = 12 V
RL = 33 Ω
50
35
VGT
VGD
ALL
ALL
1.5
0.2
V
V
VD = VDRM RL = 3.3 kΩ Tj = 125°C
MIN.
IH (2)
IT = 500 mA gate open
MAX.
75
50
90
-
50
-
mA
I - III
II
TYP.
IL
IG = 1.2 IGT
-
mA
I - II - III
MAX.
TYP.
MIN.
TYP.
MIN.
80
500
250
22
11
750
500
36
18
VD = 67 %VDRM gate open
Tj = 125°C
Tj = 125°C
dV/dt (2)
V/µs
V/µs
(dV/dt)c (2) (dI/dt)c = 20 A/ms
Table 5: Static Characteristics
Symbol
Test Conditions
tp = 380 µs Tj = 25°C
Value
1.70
10
Unit
V
VTM (2)
ITM = 28 A
VDRM = VRRM
GT
MAX.
MAX.
Tj = 25°C
µA
mA
IDRM
IRRM
Tj = 125°C
3
Note 1: minimum I
is guaranted at 5% of I
max.
GT
Note 2: for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
Parameter
Value Unit
Rth(j-c)
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to case (DC)
Junction to ambient
2.1
°C/W
2.8
60
°C/W
2/6
BTA20 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: Correlation between maximum RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P(W)
P(W)
T
case
(°C)
65
30
30
25
20
Rth = 0°C/W
25
75
85
Rth = 0.5°C/W
α = 180°
20
α = 120°
Rth = 1.5°C/W
95
15
15
10
α = 90°
α = 60°
Rth = 1°C/W
10
105
180°
α
α = 30°
5
0
5
0
115
125
α
T (°C)
amb
I (A)
T(RMS)
0
5
10
15
20
0
20
40
60
80
100
120
Figure 3: RMS on-state current versus case
temperature (full cycle)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z /R
]
th th
I (A)
T(RMS)
1
25
20
α = 180°
Z
th(j-c)
15
10
Z
th(j-a)
0.1
5
0
T (°C)
C
t (s)
p
0.01
1.E-3
0
10
20 30
40
50 60
70
80
90 100 110 120 130
1.E-2
1.E-1
1.E+0
1.E+1
1.E+2
5.E+2
Figure
(maximum values)
5:
On-state
characteristics
Figure 6: Non repetitive surge peak on-state
current versus number of cycles
I
(A)
TM
I
(A)
TSM
1000
100
10
1000
Tj max.
Vt0 = 1.04V
Rd = 20 mΩ
t=20ms
One cycle
Tj = Tj max.
Non repetitive
Tj initial=25°C
Tj = 25°C.
Number of cycles
V
(V)
TM
100
1
1
10
100
1000
1
2
3
4
5
3/6
BTA20 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
Figure 8: Relative variation of gate trigger
current and holding current versus junction
temperature
I
,I ,I [T ] / I ,I ,I [T =25°C]
H L j GT H L j
(A), I2t (A2s)
GT
I
TSM
2.5
2.0
1.5
1000
Tj initial=25°C
IGT
ITSM
1.0
0.5
IH & IL
I2t
t (ms)
p
T (°C)
j
100
0.0
0.01
0.10
1.00
10.00
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 9: Ordering Information Scheme
Triac series
BT A 20 - 600 BW RG
Insulation
A = insulated
Current
20 = 20A
Voltage
600 = 600V
700 = 700V
Sensitivity and type
BW = 50mA (max.)
CW = 35mA (max)
Packing mode
RG = Tube
Table 7: Product Selector
Voltage (xxx)
Part Numbers
Sensitivity
Type
Package
600 V
700 V
BTA20-xxxBWRG
BTA20-xxxCWRG
X
X
X
X
50 mA
35 mA
Snubberless TO-220AB Ins.
4/6
BTA20 Series
Figure 10: TO-220AB Insulated Package Mechanical Data
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
15.20
15.90 0.598
0.625
C
B
a1
a2 13.00
3.75
0.147
Ø I
b2
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
L
B
b1
b2
C
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
F
A
I4
l3
l2
c1
c2
e
c2
a1
a2
F
ØI
M
c1
b1
I4 15.80 16.40 16.80 0.622 0.646 0.661
e
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
Table 8: Ordering Information
Ordering type
BTA20-600BWRG
BTA20-600CWRG
BTA20-700BWRG
BTA20-700CWRG
Marking
Package
Weight Base qty Delivery mode
BTA20-600BW
BTA20-600CW
BTA20-700BW
BTA20-700CW
TO-220AB Ins.
2.3 g
50
Tube
Table 9: Revision History
Date
Revision
Description of Changes
Sep-2001
08-Feb-2006
1A
2
First issue.
TO-220AB Ins. delivery mode changed from bulk to tube.
5/6
BTA20 Series
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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