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BTB08-600SRG [STMICROELECTRONICS]

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BTB08-600SRG
型号： BTB08-600SRG
厂家： ST    ST
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BTA08 S/A  
BTB08 S/A  
SENSITIVE GATE TRIACS  
FEATURES  
.
.
.
VERY LOW I = 10mA max  
GT  
LOW I = 25mA max  
H
BTA Family :  
INSULATINGVOLTAGE = 2500V  
(UL RECOGNIZED : E81734)  
(RMS)  
DESCRIPTION  
A1  
A2  
The BTA/BTB08 S/A triac family are high perform-  
ance glass passivated PNPN devices.  
G
These parts are suitables for general purpose ap-  
plications where gate high sensitivity is required.  
Application on 4Q such as phase control and static  
switching.  
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(360° conduction angle)  
BTA  
BTB  
Tc = 75°C  
Tc = 80°C  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
8
A
T(RMS)  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
84  
80  
32  
10  
A
TSM  
2
I t  
2
2
A s  
I t value  
dI/dt  
Critical rate of rise of on-state current  
Repetitive  
F = 50 Hz  
A/µs  
Gate supply : I = 50mA di /dt = 0.1A/µs  
G
G
Non  
50  
Repetitive  
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 110  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Symbol  
Parameter  
BTA / BTB08-  
Unit  
400 S/A  
600 S/A  
700 S/A  
V
V
Repetitive peak off-state voltage  
Tj = 110°C  
400  
600  
700  
V
DRM  
RRM  
1/5  
March 1995  
BTA08 S/A / BTB08 S/A  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
BTA  
BTB  
BTA  
BTB  
4.4  
3.2  
Rth (j-c) AC Junction to case for 360° conduction angle  
3.3  
°C/W  
( F= 50 Hz)  
2.4  
GATE CHARACTERISTICS (maximum values)  
P
= 1W  
P
GM  
= 10W (tp = 20 µs)  
I
= 4A (tp = 20 µs)  
V = 16V (tp = 20 µs).  
GM  
G (AV)  
GM  
ELECTRICAL CHARACTERISTICS  
Symbol  
Test Conditions  
Quadrant  
Suffix  
Unit  
S
A
I
V =12V (DC) R =33Ω  
Tj=25°C  
I-II-III  
IV  
MAX  
MAX  
MAX  
MIN  
10  
10  
10  
25  
mA  
GT  
D
L
V
V =12V (DC) R =33Ω  
Tj=25°C  
Tj=110°C  
Tj=25°C  
I-II-III-IV  
I-II-III-IV  
I-II-III-IV  
1.5  
0.2  
2
V
V
GT  
D
L
V
V =V  
R =3.3kΩ  
L
GD  
D
DRM  
DRM  
tgt  
V =V  
I
G
= 40mA  
TYP  
µs  
D
dI /dt = 0.5A/µs  
G
I
IG= 1.2 I  
GT  
Tj=25°C  
I-III-IV  
II  
TYP  
20  
40  
25  
20  
40  
25  
mA  
L
I
*
I = 100mA gate open  
T
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=110°C  
Tj=110°C  
MAX  
MAX  
MAX  
MAX  
MIN  
mA  
V
H
V
*
I
= 11A tp= 380µs  
1.75  
0.01  
0.75  
TM  
TM  
I
I
V
V
Rated  
Rated  
mA  
DRM  
RRM  
DRM  
RRM  
dV/dt *  
Linear slope up to V =67%V  
D
gate open  
10  
5
10  
5
V/µs  
V/µs  
DRM  
(dV/dt)c * (dI/dt)c= 3.5A/ms  
Tj=110°C  
TYP  
* For either polarity of electrode A2 voltage with reference to electrode A1.  
2/5  
BTA08 S/A / BTB08 S/A  
ORDERING INFORMATION  
Package  
I
V
/ V  
DRM RRM  
Sensitivity Specification  
T(RMS)  
A
V
S
X
X
X
X
X
X
A
X
X
X
X
X
X
BTA  
(Insulated)  
8
400  
600  
700  
400  
600  
700  
BTB  
(Uninsulated)  
Fig.1 : Maximum RMS power dissipation versus RMS  
on-state current (F=50Hz).  
(curves are cut off by (dI/dt)c limitation)  
Fig.2  
:
Correlation between maximum RMS power  
amb  
) for different thermal resistances heatsink +  
dissipation and maximum allowable temperatures (T  
and T  
case  
contact (BTA).  
Fig.3  
:
Correlation between maximum RMS power  
amb  
) for different thermal resistances heatsink +  
Fig.4 : RMS on-state current versus case temperature.  
dissipation and maximum allowable temperatures (T  
and T  
case  
contact (BTB).  
3/5  
BTA08 S/A / BTB08 S/A  
Fig.5 : Relative variation of thermal impedance versus  
pulse duration.  
Fig.6 : Relative variation of gate trigger current and  
holding current versus junction temperature.  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
Fig.7 : Non Repetitive surge peak on-state current  
versus number of cycles.  
Fig.8 : Non repetitive surge peak on-state current for a  
sinusoidal pulse with width  
:
t
≤
10ms, and  
2
corresponding value of I t.  
Fig.9 : On-state characteristics (maximum values).  
4/5  
BTA08 S/A / BTB08 S/A  
PACKAGE MECHANICAL DATA  
TO220AB Plastic  
REF.  
DIMENSIONS  
Millimeters  
Min.  
Inches  
Min.  
H
Max.  
10.50  
15.87  
14.70  
6.85  
4.50  
3.00  
4.82  
4.00  
1.39  
0.65  
2.70  
5.58  
1.20  
0.96  
Max.  
0.413  
0.625  
0.579  
0.270  
0.178  
0.119  
0.190  
0.158  
0.055  
0.026  
0.107  
0.22  
A
J
G
A
B
C
D
F
10.20  
14.23  
12.70  
5.85  
0.401  
0.560  
0.500  
0.230  
I
D
B
C
G
H
I
2.54  
4.48  
3.55  
1.15  
0.35  
2.10  
4.58  
0.80  
0.64  
0.100  
0.176  
0.140  
0.045  
0.013  
0.082  
0.18  
F
O
L
J
P
L
M
N
O
P
M
N
=
=
0.031  
0.025  
0.048  
0.038  
Cooling method : C  
Marking : type number  
Weight : 2.3 g  
Recommended torque value : 0.8 m.N.  
Maximum torque value : 1 m.N.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability  
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.  
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems  
without express written approval of SGS-THOMSON Microelectronics.  
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-  
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  

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