BTB10-600C [STMICROELECTRONICS]

10A TRIACS; 10A双向可控硅
BTB10-600C
型号: BTB10-600C
厂家: ST    ST
描述:

10A TRIACS
10A双向可控硅

可控硅 三端双向交流开关
文件: 总6页 (文件大小:62K)
中文:  中文翻译
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BTA/BTB10 Series  
®
SNUBBERLESS™ & STANDARD  
10A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
Unit  
A
G
I
10  
T(RMS)  
A1  
V
/V  
600 and 800  
25 to 50  
V
DRM RRM  
A2  
I
mA  
GT (Q )  
1
DESCRIPTION  
A1  
A2  
A1  
A2  
G
Available either in standard or snubberless  
version, the BTA/BTB10 triac series is suitable for  
general purpose AC switching. They can be used  
as an ON/OFF function in applications such as  
static relays, heating regulation, induction motor  
starting circuits... or for phase control operation in  
light dimmers, motor speed controllers, ...  
The snubberless version (W suffix) is specially  
recommended for use on inductive loads, thanks  
to their high commutation performances.  
G
TO-220AB Insulated  
(BTA10)  
TO-220AB  
(BTB10)  
By using an internal ceramic pad, the BTA series  
provides voltage insulated tab (rated at 2500 V  
RMS) complying with UL standards (File ref.:  
E81734).  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(full sine wave)  
TO-220AB  
Tc = 105°C  
A
T(RMS)  
10  
TO-220AB Ins.  
F = 60 Hz  
Tc = 95°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
105  
100  
A
TSM  
F = 50 Hz  
²
²
²
tp = 10 ms  
55  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
A/µs  
V
I
= 2 x I , tr 100 ns  
G
GT  
V
/V  
Non repetitive surge peak off-state  
voltage  
DRM RRM  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
+ 100  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
A
GM  
P
Average gate power dissipation  
1
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
April 2002 - Ed: 5A  
1/6  
BTA/BTB10 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS™ (3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB10  
Unit  
CW  
BW  
I
(1)  
mA  
I - II - III  
I - II - III  
I - II - III  
MAX.  
MAX.  
MIN.  
35  
50  
GT  
V
V
V
= 12 V  
R = 33 Ω  
D
L
1.3  
V
GT  
V
0.2  
= V  
R = 3.3 kΩ  
Tj = 125°C  
V
GD  
D
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
35  
50  
50  
70  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
G
GT  
L
60  
80  
dV/dt (2)  
V
= 67 % V  
gate open Tj = 125°C  
Tj = 125°C  
MIN.  
MIN.  
500  
5.5  
1000  
9.0  
V/µs  
D
DRM  
(dI/dt)c (2) Without snubber  
A/ms  
STANDARD (4 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB10  
Unit  
C
B
I - II - III  
IV  
25  
50  
50  
100  
mA  
I
(1)  
MAX.  
GT  
V
V
= 12 V  
R = 33 Ω  
D
L
V
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
D
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
25  
40  
80  
200  
5
50  
50  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
G
GT  
L
100  
400  
10  
V
= 67 %V  
gate open Tj = 125°C  
dV/dt (2)  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 4.4 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Tj = 25°C  
Value  
Unit  
V
(2)  
(2)  
I
= 14 A  
tp = 380 µs  
MAX.  
MAX.  
MAX.  
1.55  
0.85  
40  
V
V
TM  
TM  
V
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
V
= V  
RRM  
5
DRM  
RRM  
DRM  
MAX.  
1
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/6  
BTA/BTB10 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (AC)  
TO-220AB  
TO-220AB Insulated  
TO-220AB  
1.5  
°C/W  
th(j-c)  
2.4  
R
Junction to ambient  
°C/W  
th(j-a)  
60  
TO-220AB Insulated  
PRODUCT SELECTOR  
Part Number  
Voltage (xxx)  
Sensitivity  
Type  
Package  
600 V  
800 V  
BTA/BTB10-xxxB  
BTA/BTB10-xxxBW  
BTA/BTB10-xxxC  
BTA/BTB10-xxxCW  
X
X
X
X
X
X
X
X
50 mA  
50 mA  
25 mA  
35 mA  
Standard  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
Snubberless  
BTB: Non insulated TO-220AB package  
ORDERING INFORMATION  
BT A 10 - 600 BW (RG)  
TRIAC  
SERIES  
PACKING MODE  
Blank: Bulk  
RG:Tube  
SENSITIVITY & TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
C: 25mA STANDARD  
INSULATION:  
A: insulated  
VOLTAGE:  
600: 600V  
800: 800V  
B: non insulated  
CW: 35mA SNUBBERLESS  
CURRENT: 10A  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
BTA/BTB10-xxxyz  
BTA/BTB10xxxyz  
BTA/BTB10-xxxyz  
2.3 g  
2.3 g  
250  
50  
Bulk  
BTA/BTB10-xxxyzRG  
Tube  
Note: xxx = voltage, y = sensitivity, z = type  
3/6  
BTA/BTB10 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
12  
11  
10  
9
8
13  
12  
11  
10  
9
BTB  
BTA  
8
7
7
6
5
4
3
2
1
0
6
5
4
3
2
Tc(°C)  
IT(RMS) (A)  
1
0
0
1
2
3
4
5
6
7
8
9
10  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
Fig. 4: On-state characteristics (maximum  
versus pulse duration.  
values).  
ITM (A)  
K=[Zth/Rth]  
100  
1E+0  
Tj max  
Tj max.  
Vto = 0.85 V  
Rd = 40 mW  
Zth(j-c)  
1E-1  
10  
1
Zth(j-a)  
Tj=25°C  
tp (s)  
VTM (V)  
1E-2  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 5: Surge peak on-state current versus  
Fig. 6: Non-repetitive surge peak on-state  
number of cycles.  
current for  
a
sinusoidal pulse with width  
tp < 10ms, and corresponding value of I²t.  
ITSM (A), I²t (A²s)  
ITSM (A)  
110  
100  
1000  
Tj initial=25°C  
90  
80  
t=20ms  
dI/dt limitation:  
50A/µs  
One cycle  
Non repetitive  
Tj initial=25°C  
ITSM  
I²t  
70  
60  
50  
40  
30  
20  
10  
0
100  
Repetitive  
Tc=95°C  
tp (ms)  
Number of cycles  
10  
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
4/6  
BTA/BTB10 Series  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 8: Relative variation ofcritical rate ofdecrease  
ofmain current versus(dV/dt)c (typical values).  
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
2.5  
2.0  
1.8  
C
2.0  
1.6  
IGT  
B
1.4  
1.5  
1.2  
BW/CW  
IH & IL  
1.0  
1.0  
0.8  
0.5  
0.6  
(dV/dt)c (V/µs)  
Tj(°C)  
0.4  
0.0  
0.1  
1.0  
10.0  
100.0  
-40 -20  
0
20  
40  
60  
80 100 120 140  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
6
5
4
3
2
1
Tj (°C)  
0
0
25  
50  
75  
100  
125  
5/6  
BTA/BTB10 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
B
C
b2  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
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6/6  

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