BTW67-800 [STMICROELECTRONICS]
50A SCRs; 可控硅50A
ST 
BTW67 and BTW69 Series
STANDARD
50A SCRs
MAIN FEATURES:
Symbol
Value
50
Unit
A
I
T(RMS)
V
/V
600 to 1200
80
V
DRM RRM
I
mA
GT
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
RD91
(BTW67)
TOP3
(BTW69)
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(180° conduction angle)
RD91
TOP3 Ins.
RD91
Tc = 70°C
Tc = 75°C
Tc = 70°C
Tc = 75°C
T(RMS)
50
A
I
Average on-state current
(180° conduction angle)
T(AV)
32
A
A
TOP3 Ins.
tp = 8.3 ms
tp = 10 ms
I
Non repetitive surge peak on-state current
610
580
TSM
Tj = 25°C
Tj = 25°C
Tj = 125°C
²
²
2
1680
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current I
=
G
dI/dt
F = 60 Hz
tp = 20 µs
A/µs
2 x I
, tr ≤ 100 ns
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
8
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage
5
RGM
April 2001 - Ed: 4
1/5
BTW67 and BTW69 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
I
MIN.
MAX.
MAX.
MIN.
8
GT
mA
80
1.3
V
V
= 12 V
R = 33 Ω
D
L
V
V
V
GT
V
Tj = 125°C
= V
R = 3.3 kΩ
0.2
150
200
1000
1.9
1.0
8.5
10
GD
D
DRM
L
I
I
= 500 mA Gate open
MAX.
MAX.
mA
mA
H
T
I
I
= 1.2 I
G
GT
L
dV/dt
V
= 67 % V
Gate open
DRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
V/µs
V
D
V
I
= 100 A tp = 380 µs
TM
TM
V
Threshold voltage
V
t0
R
d
Dynamic resistance
mΩ
µA
mA
I
I
DRM
RRM
V
= V
RRM
DRM
5
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (DC)
RD91 (Insulated)
1.0
0.9
50
°C/W
th(j-c)
TOP3 Insulated
TOP3 Insulated
R
Junction to ambient
°C/W
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
800 V
1200 V
BTW67-xxx
BTW69-xxx
X
X
X
X
X
X
80 mA
80 mA
RD91
TOP3 Ins.
ORDERING INFORMATION
OTHER INFORMATION
Part Number
BTW67-xxx
Marking
Weight
Base Quantity
Packing mode
BTW67xxx
BTW69xxx
20.0 g
4.5 g
25
Bulk
Bulk
BTW69-xxx
120
Note: xxx = voltage
2/5
BTW67 and BTW69 Series
Fig. 1: Maximum average power dissipation
Fig. 2: Average and D.C. on-state current versus
versus average on-state current.
case temperature.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus
Fig. 6: Non-repetitive surge peak on-state
number of cycles.
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
3/5
BTW67 and BTW69 Series
Fig. 7: On-state characteristics (maximum
values).
PACKAGE MECHANICAL DATA
RD91 (Plastic)
DIMENSIONS
Millimeters
REF.
Inches
Max.
Min.
Max.
Min.
A
A1
A2
B
40.00
30.30
22.00
27.00
16.50
24.00
14.00
3.50
1.575
1.193
0.867
1.063
0.650
0.945
0.551
0.138
0.118
0.035
0.177
0.535
0.138
0.075
43°
29.90
1.177
B1
B2
C
13.50
0.531
C1
C2
E3
F
1.95
0.70
4.00
11.20
3.10
1.70
33°
3.00
0.077
0.027
0.157
0.441
0.122
0.067
33°
0.90
4.50
I
13.60
3.50
L1
L2
N1
N2
1.90
43°
28°
38°
28°
38°
4/5
BTW67 and BTW69 Series
PACKAGE MECHANICAL DATA
TOP3 Ins.(Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of
STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication
supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as
critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved
.
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