BTW68-800RG [STMICROELECTRONICS]
30 A standard SCR Thyristor in TOP3I;
| 型号： | BTW68-800RG |
| 厂家： | 
ST |
| 描述： | 30 A standard SCR Thyristor in TOP3I 栅极 触发装置 可控硅整流器 局域网 |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTW 68 (N)
SCR
FEATURES
.
.
.
.
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
(RMS)
DESCRIPTION
K
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
A
G
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
TOP 3
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(180° conduction angle)
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
30
35
A
T(RMS)
I
Average
on-state
current
(180°
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
19
22
A
A
T(AV)
conduction angle,single phase circuit)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
tp=10 ms
tp=10 ms
420
400
800
100
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
A/µs
Gate supply : I = 100 mA di /dt = 1 A/µs
G
G
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230
°C
Symbol
Parameter
BTW 68
BTW 68 / BTW 68 N
Unit
200
200
400
600
600
800
1000 1200
1000 1200
V
V
Repetitive peak off-state voltage
Tj = 125 °C
400
800
V
DRM
RRM
1/5
March 1995
BTW 68 (N)
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
BTW 68
1.1
BTW 68 N
0.8
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
GM
= 40W (tp = 20 µs)
I
= 8A (tp = 20 µs)
V
RGM
= 5 V.
G (AV)
FGM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Value
Unit
BTW 68
BTW 68 N
I
V =12V (DC) R =33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
50
1.5
0.2
2
mA
V
GT
D
L
V
V =12V (DC) R =33Ω
MAX
MIN
TYP
GT
GD
D
L
V
V =V
R =3.3kΩ
V
D
DRM
DRM
L
tgt
V =V
I
= 200mA
µs
D
G
dI /dt = 1.5A/µs
G
I
I = 1.2 I
GT
Tj=25°C
Tj=25°C
Tj=25°C
TYP
MAX
MAX
40
75
mA
mA
V
L
G
I
I = 500mA gate open
T
H
V
BTW 68
BTW 68 N I = 70A
ITM= 60A
TM
2.1
2.2
TM
tp= 380µs
I
I
V
Rated
Rated
Tj=25°C
Tj= 125°C
Tj= 125°C
MAX
MIN
0.02
6
mA
DRM
RRM
DRM
V
RRM
dV/dt
tq
Linear slope up to
V =67%V
D
gate open
V
≤ 800V
500
250
V/µs
DRM
V ≥ 1000V
DRM
DRM
V =67%V
I
= 60A V = 75V
dV /dt= 20V/µs
Tj= 125°C
TYP
100
µs
D
DRM
TM
R
dI /dt=30 A/µs
TM
D
2/5
BTW 68 (N)
Package
BTW 68
I
V
/ V
DRM RRM
Sensitivity Specification
T(RMS)
A
V
BTW
X
30
200
400
(Insulated)
X
600
X
800
X
1000
1200
600
X
X
BTW 68 N
35
X
(Uninsulated)
800
X
1000
1200
X
X
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 68).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
amb
for different thermal resistances heatsink +
contact (BTW 68).
and T
)
case
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 68 N).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
amb
for different thermal resistances heatsink +
contact (BTW 68 N).
and T
)
case
3/5
BTW 68 (N)
Fig.5
:
Average on-state current versus case
Fig.6
:
Average on-state current versus case
temperature (BTW 68).
temperature (BTW 68 N).
Fig.7 : Relative variation of thermal impedance versus
Fig.8 : Relative variation of gate trigger current versus
pulse duration.
junction temperature.
Zth/Rth
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
tp(s)
1E+2 1E+3
1E-3
1E-2
1E-1
1E+0
1E+1
Fig.9 : Non repetitive surge peak on-state current
Fig.10 : Non repetitive surge peak on-state current for a
versus number of cycles.
sinusoidal pulse with width
corresponding value of I t.
:
t
≤
10 ms, and
2
4/5
BTW 68 (N)
Fig11 : On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TOP 3 Plastic
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A
H
I
R 4.6
J
A
B
C
D
G
H
I
15.10 15.50 0.594 0.611
20.70 21.10 0.814 0.831
14.30 15.60 0.561 0.615
16.10 16.50 0.632 0.650
G
B
D
3.40
4.40
4.08
1.45
0.50
2.70
5.40
1.20
-
0.133
-
4.60
4.17
1.55
0.70
2.90
5.65
1.40
0.173 0.182
0.161 0.164
0.057 0.062
0.019 0.028
0.106 0.115
0.212 0.223
0.047 0.056
J
P
L
C
L
M
N
P
M
N
N
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
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