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BU807 [STMICROELECTRONICS]

MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS; 中压NPN快速切换达林顿晶体管
BU807
型号： BU807
厂家： ST    ST
描述：

MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
中压NPN快速切换达林顿晶体管

晶体 晶体管 达林顿晶体管 开关 局域网
文件： 总4页 (文件大小：52K)
中文：  中文翻译
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BU806  
BU807  
®
MEDIUM VOLTAGE NPN FAST SWITCHING  
DARLINGTON TRANSISTORS  
■
STMicroelectronics PREFERRED  
SALESTYPES  
■
■
■
NPN DARLINGTONS  
LOW BASE-DRIVE REQUIREMENTS  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATION  
■
HORIZONTAL DEFLECTION FOR  
MONOCHROME TVs  
3
2
1
DESCRIPTION  
TO-220  
The devices are silicon epitaxial planar NPN  
power transistors in Darlington configuration with  
integrated base-emitter speed-up diode, mounted  
in TO-220 plastic package.  
They can be used in horizontal output stages of  
110 oCRT video displays.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BU806  
400  
BU807  
330  
VCBO  
VCEV  
VCEO  
VEBO  
IC  
Collector-base Voltage (IE = 0)  
Collector-emitter Voltage (VBE = -6V)  
Collector-emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
400  
330  
200  
150  
V
6
V
8
A
ICM  
Collector Peak Current  
15  
A
IDM  
Damper Diode Peak Forward Current  
Base Current  
10  
A
IB  
2
60  
A
o
Ptot  
Tstg  
Tj  
W
oC  
oC  
Total Power Dissipation at Tcase < 25 C  
Storage Temperature  
-65 to 150  
150  
Max Operating Junction Temperature  
1/4  
January 1999  
BU806 / BU807  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
Max  
2.08  
70  
oC/W  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 330 V  
Min.  
Typ.  
Max.  
Unit  
ICES  
Collector Cut-off  
Current (VBE = 0)  
for BU807  
for BU806  
100  
100  
µA  
µA  
VCE = 400 V  
ICEV  
IEBO  
Collector Cut-off  
Current (VBE = -6V)  
for BU807  
for BU806  
VCE = 330 V  
VCE = 400 V  
100  
100  
µA  
µA  
Emitter Cut-off  
Current (IC = 0)  
VEB = 6 V  
IC = 100 mA  
IC = 5A  
3.5  
mA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
for BU807  
for BU806  
150  
200  
V
V
VCE(sat)  
VBE(sat)  
VF  
Collector-Emitter  
Saturation Voltage  
IB = 50mA  
1.5  
2.4  
2
V
V
V
Base-Emitter  
Saturation Voltage  
IC = 5A  
IB = 50mA  
Damper Diode  
IF = 4A  
Forward Voltage  
RESISTIVE LOAD  
Turn-on Time  
Turn-off Time  
Storage Time  
Fall Time  
ton  
toff  
ts  
IC = 5 A  
IB1 = 50 mA  
VCC = 100 V  
IB2 = -500 mA  
0.35  
0.4  
0.55  
0.2  
µs  
µs  
µs  
µs  
1
tf  
Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %  
2/4  
BU806 / BU807  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
P011C  
3/4  
BU806 / BU807  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
http://www.st.com  
.
4/4  

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