BUL804_06 [STMICROELECTRONICS]

High voltage fast-switching NPN Power Transistor; 高压快速开关NPN功率晶体管
BUL804_06
型号: BUL804_06
厂家: ST    ST
描述:

High voltage fast-switching NPN Power Transistor
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件: 总10页 (文件大小:204K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BUL804  
High voltage fast-switching NPN Power Transistor  
General features  
NPN Transistor  
High voltage capability  
Low spread of dynamic parameters  
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
3
In compliance with the 2002/93/EC European  
2
1
Directive  
TO-220  
Description  
The device is manufactured using high voltage  
Multi-Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
Internal schematic diagram  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use as PFC in high  
frequency ballast half Bridge voltage fed topology.  
Applications  
Electronic ballast for fluorescent lighting  
Dedicated for PFC solution in half-bridge  
voltage fed topology.  
Order codes  
Part Number  
Marking  
Package  
TO-220  
Packing  
BUL804  
BUL804  
Tube  
May 2006  
Rev 2  
1/10  
www.st.com  
10  
BUL804  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
2.2  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
2/10  
BUL804  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-emitter voltage (V = 0)  
800  
V
V
CES  
BE  
V
Collector-emitter voltage (I = 0)  
450  
CEO  
B
V
Emitter-base voltage (I = 0)  
8
V
EBO  
C
I
Collector current  
4
A
C
I
Collector peak current (t < 5ms)  
8
A
CM  
P
I
Base current  
2
A
B
I
Base peak current (t < 5ms)  
4
70  
A
BM  
P
P
Total dissipation at T = 25°C  
W
°C  
°C  
tot  
c
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 2.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case  
Thermal resistance junction-amb  
__max  
__max  
1.78  
62.5  
°C/W  
°C/W  
thj-case  
R
thj-amb  
3/10  
Electrical characteristics  
BUL804  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
V
V
=800V  
Collector cut-off current  
CE  
CE  
100  
500  
µA  
µA  
I
CES  
(V =-1.5V)  
=800V  
T =125°C  
BE  
j
Collector cut-off current  
I
V
=450V  
250  
µA  
CEO  
CE  
(I =0)  
B
Emitter-base voltage  
V
I =10mA  
8
V
EBO  
E
(I = 0)  
C
Collector-emitter  
sustaining voltage  
(1)  
V
CEO(sus)  
I =100mA  
L =25mH  
450  
V
C
(I = 0)  
B
(1)  
I =1A  
I =0.2A  
0.8  
1.2  
V
V
C
B
Collector-emitter  
saturation voltage  
V
CE(sat)  
BE(sat)  
I =2.5A  
I =0.5A  
C
B
I =1A  
I =0.2A  
1.2  
1.3  
V
V
C
B
Base-emitter saturation  
voltage  
(1)  
V
I =2.5A  
I =0.5A  
B
C
I =10mA  
V
V
=5V  
=5V  
10  
10  
C
CE  
CE  
h
DC current gain  
FE  
I =2A  
20  
C
V
I
=300V  
I =2A  
C
CC  
Resistive load  
Storage time  
Fall time  
t
= -I =0.4A  
1.8  
2.6  
µs  
µs  
s
B1  
B2  
t
t = 30µs (see fig.8 )  
0.1  
0.25  
f
p
I =2A  
I
=0.4A  
B1  
C
Inductive load  
Storage time  
Fall time  
t
V
=-5V  
R
=0  
BB  
0.6  
0.1  
1
µs  
µs  
s
BE(off)  
t
V
=360V (see fig.9)  
0.2  
f
clamp  
Note (1) Pulsed duration = 300µs, duty cycle 1.5%  
4/10  
BUL804  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 1.  
Figure 3.  
Figure 5.  
DC current gain  
Figure 2.  
DC current gain  
Collector-emitter saturation Figure 4.  
voltage  
Base-emitter saturation  
voltage  
Inductive load switching time Figure 6.  
Resistive load switching time  
5/10  
Electrical characteristics  
Figure 7.  
BUL804  
Reverse biased safe  
operating area  
2.2  
Test circuits  
Figure 8.  
Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
Figure 9.  
Inductive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
3) Fast recovery rectifier  
6/10  
BUL804  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
7/10  
Package mechanical data  
BUL804  
TO-220 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
TYP  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
MAX.  
A
b
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
8/10  
BUL804  
Revision history  
4
Revision history  
Table 4.  
Date  
Revision history  
Revision  
Changes  
01-July-2005  
17-May-2006  
1
2
Initial release.  
New template.  
9/10  
BUL804  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,  
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,  
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR  
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
10/10  

相关型号:

BUL805

High voltage fast-switching NPN Power Transistor
STMICROELECTR

BUL805_08

High voltage fast-switching NPN power transistor
STMICROELECTR

BUL810

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL810

isc Silicon NPN Power Transistor
ISC

BUL810_08

High voltage fast-switching NPN power transistor
STMICROELECTR

BUL85D

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL87

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-220VAR
ETC

BUL89

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL89_01

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL903

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL903ED

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR

BUL903EDFP

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTR