BULT118_08 [STMICROELECTRONICS]
High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管
| 型号： | BULT118_08 |
| 厂家： | 
ST |
| 描述： | High voltage fast-switching NPN power transistor |
| 文件： | 总10页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULT118
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
■ Electronic ballast for fluorescent lighting
1
2
■ Flyback and forward single transistor low power
3
converters
SOT-32
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
Figure 1.
Internal schematic diagram
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1.
Order code
BULT118
Device summary
Marking
Package
SOT-32
Packaging
BULT118
Tube
July 2008
Rev 2
1/10
www.st.com
10
Electrical ratings
BULT118
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
VCES
VCEO
VEBO
IC
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
700
400
9
V
V
2
A
ICM
IB
Collector peak current (tP < 5 ms)
Base current
4
A
1
A
IBM
Ptot
Tstg
TJ
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
2
45
A
W
°C
°C
-65 to 150
150
Max. operating junction temperature
2/10
BULT118
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
VCE = 700 V
Collector cut-off current
(VBE =0)
100
500
µA
µA
ICES
VCE = 700 V TC = 125 °C
Collector-emitter leakage
current
ICEO
VCE = 400 V
250
µA
VEBO
IE = 10 mA
Emitter-base voltage
9
V
Collector-emitter
sustaining voltage
(1)
IC = 10 mA
400
VCEO(sus)
V
(IB = 0)
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
0.5
1
V
V
V
Collector-emitter
saturation voltage
(1)
_
_
VCE(sat)
1.5
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
1
V
V
V
Base-emitter saturation
voltage
(1)
_
_
1.2
1.3
VBE(sat)
IC = 10 mA _ VCE = 5 V
IC = 0.5 A _ VCE = 5 V
IC = 2 A _ _ VCE = 5 V
10
10
8
(1)
DC current gain
50
hFE
Resistive load
Rise time
tr
ts
tf
IC = 1 A
VCC= 125 V
0.4
3.2
0.7
4.5
0.4
µs
µs
µs
Storage time
Fall time
IB1 =-IB2 = 0.2 A
0.25
IC = 1 A
BE(off) = -5 V
VClamp = 300 V
IB1 = 0.2 A
L= 50 mH
Inductive load
Storage time
Fall time
ts
tf
V
0.8
µs
µs
0.16
1. Pulsed duration = 300 µs, duty cycle ≤1.5 %
3/10
Electrical characteristics
BULT118
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Figure 3.
Derating curve
DC current gain
Figure 5.
DC current gain
Collector-emitter saturation Figure 7.
voltage
Base-emitter saturation
voltage
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BULT118
Electrical characteristics
Inductive load storage time
Figure 8.
Inductive load fall time
Figure 9.
Figure 10. Resistive load fall time
Figure 11. Resistive load storage time
Figure 12. Reverse biased SOA
5/10
Electrical characteristics
BULT118
2.2
Test circuits
Figure 13. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Figure 14. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
6/10
BULT118
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
BULT118
SOT-32 (TO-126) MECHANICAL DATA
mm.
DIM.
MIN.
TYP
MAX.
A
B
2.4
2.9
0.64
0.39
10.5
7.4
0.88
0.63
11.05
7.8
B1
D
E
e
2.04
4.07
15.3
2.9
2.29
4.58
2.54
5.08
16
e1
L
P
3.2
Q
Q1
H2
I
3.8
1
1.52
2.15
1.27
0016114E
8/10
BULT118
Revision history
4
Revision history
Table 4.
Date
Document revision history
Revision
Changes
29-Sep-2003
10-Jul-2008
1
Initial release.
Updated: VCEO(sus) condition in Table 3 on page 3,
SOT-32 mechanical data, cover page
2
9/10
BULT118
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