BUX77ESY [STMICROELECTRONICS]
5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN;型号: | BUX77ESY |
厂家: | ST |
描述: | 5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN 局域网 开关 晶体管 |
文件: | 总8页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUX77ESY
BUX77HR
Hi-Rel NPN bipolar transistor 80 V - 5 A
Features
BVCEO
80 V
5 A
IC (max)
HFE at 10 V - 150 mA
> 70
Operating temperature range
-65°C to +200°C
1
3
2
■ Hi-Rel NPN bipolar transistor
■ Linear gain characteristics
■ ESCC qualified
TO-257
■ European preferred part list - EPPL
Figure 1.
Internal schematic diagram
■ Radiation level: lot specific total dose contact
marketing for specified level
Description
The BUX77HR is a silicon planar epitaxial NPN
transistor in TO-257 package. It is specifically
designed for aerospace Hi-Rel applications and
ESCC qualified according to the 5203-016
specification. In case of conflict between this
datasheet and ESCC detailed specification, the
latter prevails.
Table 1.
Device summary
Order codes
Package
Lead finish
Marking
Type
EPPL
Packaging
520301606
520301607
Gold
Solder Dip
BUX77ESYHRB
BUX77ESY
TO-257
ESCC Flight
Yes
Strip pack
Engineering
model
TO-257
Gold
BUX77ESY
Strip pack
January 2010
Doc ID 16970 Rev 1
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www.st.com
8
Electrical ratings
BUX77ESY, BUX77HR
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
100
V
V
80
6
V
5
35
A
Ptot
Total dissipation at TC ≤ 25 °C
Storage temperature
W
°C
°C
Tstg
TJ
-65 to 200
200
Max. operating junction temperature
Figure 2.
Symbol
Thermal data
Parameter
Value
Unit
RthJC
Thermal resistance junction-case
__
max
5
°C/W
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BUX77ESY, BUX77HR
Electrical characteristics
2
Electrical characteristics
T
= 25 °C unless otherwise specified.
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
VCB = 80 V
VCB = 80 V
0.5
µA
µA
Collector cut-off
current (IE = 0)
ICBO
ICEO
IEBO
-
-
-
Tamb = 150 °C
150
Collector cut-off
current (IB = 0)
VCE = 60 V
VEB = 4 V
10
µA
µA
Emitter cut-off current
(IC = 0)
0.5
Collector-emitter
breakdown voltage
V(BR)CES
IC = 2 mA
IC = 50 mA
IE = 1 mA
100
80
6
-
-
-
V
V
V
(VBE = 0)
Collector-emitter
breakdown voltage
(1)
V(BR)CEO
(IB = 0)
Emitter-base
breakdown voltage
V(BR)EBO
(IC = 0)
Collector-emitter
saturation voltage
(1)
VCE(sat)
IC = 5 A
IC = 5 A
IB = 0.5 A
IB = 0.5 A
-
-
1
V
V
Base-emitter
saturation voltage
(1)
VBE(sat)
1.3
IC = 0.5 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
70
50
30
200
(1)
hFE
DC current gain
IC = 5 A
-
IC = 1 A
Tamb = -55 °C
25
VCE = 5 V
IC = 0.5 A
IC = 5 A
AC forward current
transfer ratio
hfe
2.5
-
-
-
f = 20 MHz
VCC = 40 V
ton
Turn-on time
Turn-off time
0.3
0.7
µs
µs
VBB = 0.4 V IB1 = -IB2 = 0.5 A
VCC = 40 V IC = 5 A
toff
VBB = 0.4 V IB1 = -IB2 = 0.5 A
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
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Electrical characteristics
BUX77ESY, BUX77HR
2.1
Test circuit
Figure 3.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
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Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
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Package mechanical data
BUX77ESY, BUX77HR
TO-257 mechanical data
mm.
DIM.
MIN.
TYP
MAX.
A
A1
A2
b
4.83
5.08
0.89
1.14
3.05
0.64
0.64
1.02
0.89
b1
D
0.76
16.38
10.41
16.89
10.92
0.97
D1
D2
e
2.54
E
10.41
12.70
13.39
3.56
10.67
19.05
13.64
3.81
L
L1
P
0117268D
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BUX77ESY, BUX77HR
Revision history
4
Revision history
Table 4.
Date
12-Jan-2010
Document revision history
Revision
Changes
1
Initial release
Doc ID 16970 Rev 1
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BUX77ESY, BUX77HR
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Doc ID 16970 Rev 1
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5A, 80V, NPN, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN
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