BUY69A [STMICROELECTRONICS]
HIGH VOLTAGE NPN SILICON TRANSISTOR; 高压NPN硅晶体管
| 型号： | BUY69A |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUY69A
HIGH VOLTAGE NPN SILICON TRANSISTOR
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STM PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
HIGH POWER TO-3 PACKAGE
APPLICATIONS:
1
■
HORIZONTAL DEFLECTION FOR COLOUR
2
TV
■
SWITCHING REGULATORS
TO-3
DESCRIPTION
The BUY69A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case. It is intended
for horizontal deflection output stage of CTV
receivers and high voltage, fast switching and
industrial applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
1000
V
V
400
8
V
10
A
ICM
Collector Peak Current (tp ≤ 10 ms )
Base Current
15
3
A
IB
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
100
W
oC
oC
Storage Temperature
-65 to 200
200
Max. Operating Junction Temperature
1/4
June 1998
BUY69A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.75
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 1000 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
1
mA
IEBO
Emitter Cut-off Current VEB = 8 V
(IC = 0)
1
mA
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 100 mA
1000
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 8 A
IC = 8 A
IB = 2.5 A
IB = 2.5 A
3.3
2.2
V
VBE(sat)
Base-Emitter
V
Saturation Voltage
hFE
fT
DC Current Gain
IC = 2.5 A
IC = 0.5 A
VCE = 25 V
VCE = 10 V
VCE = 10 V
15
4
Transition Frequency
10
MHz
A
I
s/b**
Second Breakdown
Collector Current
Turn on Time
IC = 5 A
IB1 = 1 A
VCE = 250 V
VCE = 250 V
VCE = 40 V
ton
0.2
µs
ts
ts
Storage Time
Fall Time
IC = 5 A
IB1 = - IB2 = 1 A
1.7
0.3
µs
µs
IC = 8 A
tf
Fall Time
IB1 = - IB2 = 2.5 A
1
µs
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Pulsed: 1s, non repetitive pulse.
For characteristics curves see the BUW34/5/6 series.
2/4
BUY69A
TO-3 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.00
0.97
TYP.
MAX.
13.10
1.15
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
A
B
C
D
E
G
N
P
R
U
V
1.50
1.65
8.32
8.92
19.00
10.70
16.50
25.00
4.00
20.00
11.10
17.20
26.00
4.09
38.50
30.00
39.30
30.30
A
D
P
C
G
R
P003F
3/4
BUY69A
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical componentsin life support devices or systems without express written approval of STMicroelectronics.
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4/4
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