BUZ72A [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS; N - 沟道增强型功率MOS晶体管
| 型号： | BUZ72A |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| 文件： | 总7页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
BUZ72A
VDSS
RDS(on)
< 0.25 Ω
ID
100 V
11 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.23 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
3
HIGH CURRENT CAPABILITY
2
1
175oC OPERATING TEMPERATURE
APPLICATIONS
TO-220
■
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDG R
VGS
ID
Parameter
Value
100
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
V
100
± 20
V
Drain Current (continuous) at Tc = 25 oC
11
A
IDM
Drain Current (pulsed)
44
A
Ptot
Total Dissipation at Tc = 25 oC
Storage Temperature
70
W
oC
oC
Tstg
Tj
-65 to 175
175
Max. Operating Junction Temperature
DIN Humidity Category (DIN 40040)
IEC Climatic Category (DIN IEC 68-1)
E
55/150/56
1/7
June 1993
BUZ72A
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.14
62.5
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
11
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
36
9
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
7
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
100
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
Tj = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
2.9
Max.
4
Unit
V
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
2
RDS(on) Static Drain-source On VGS = 10 V ID = 5 A
Resistance
0.23
0.25
Ω
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS = 25 V ID = 5 A
Min.
Typ.
Max.
Unit
gfs ( )
2.7
4.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
330
90
25
450
120
40
pF
pF
pF
SWITCHING
Symbol
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
VDD = 50 V
ID = 5.5 A
10
50
25
20
15
75
40
30
ns
ns
ns
ns
RGS = 4.7 Ω
VGS = 10 V
2/7
BUZ72A
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISD M
Source-drain Current
Source-drain Current
(pulsed)
11
44
A
A
VSD ( ) Forward On Voltage
ISD = 22 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
ISD = 11 A
VDD = 20 V
di/dt = 100 A/µs
80
ns
Tj = 150 oC
Qrr
Reverse Recovery
Charge
0.22
µC
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
Derating Curve
Output Characteristics
3/7
BUZ72A
Transfer Characteristics
Transconductance
Static Drain-Source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-Source Voltage
Capacitance Variation
4/7
BUZ72A
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-Drain Diode Forward Characteristics
5/7
BUZ72A
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
6/7
BUZ72A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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7/7
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