BYT12PI [STMICROELECTRONICS]
FAST RECOVERY RECTIFIER DIODE; 快恢复整流二极管
| 型号： | BYT12PI |
| 厂家： | 
ST |
| 描述： | FAST RECOVERY RECTIFIER DIODE |
| 文件： | 总5页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT 12PI-1000
®
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
Insulating voltage 2500 VRMS
LOW NOISE TURN-OFF SWITCHING
INSULATED: Capacitance 7pF
A
K
SUITABLE APPLICATIONS
Isolated
TO220AC
(Plastic)
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
ABSOLUTE MAXIMUM RATINGS
Symbol
VRRM
Parameter
Repetitive Peak Reverse Voltage
Value
Unit
V
1000
1000
150
25
VRSM
Non Repetitive Peak Reverse Voltage
Repetive Peak Forward Current
RMS Forward Current
V
IFRM
A
tp 10 s
≤
µ
IF (RMS)
IF (AV)
A
Average Forward Current
T = 50 C
12
A
°
c
= 0.5
δ
IFSM
P
Surge non Repetitive Forward Current
tp = 10ms
Sinusoidal
75
A
Power Dissipation
25
W
T = 50 C
°
c
Tstg
Tj
Storage and Junction Temperature Range
- 40 to + 150
- 40 to + 150
C
°
THERMAL RESISTANCE
Symbol
Test Conditions
Value
Unit
C/W
Rth (j - c)
Junction-case
4
°
October 1999 Ed : 1A
1/5
BYT 12PI-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
Test Conditions
Min.
Typ.
Max.
50
Unit
IR
VR = VRRM
T = 25 C
A
µ
°
j
2.5
1.9
1.8
mA
V
T = 100 C
°
j
VF
IF = 12A
T = 25 C
°
j
Tj = 100°C
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
155
65
Unit
trr
T = 25 C
IF = 1A
di /dt = - 15A/ s
F
VR = 30V
Irr = 0.25A
°
µ
j
ns
IF = 0.5A
IR = 1A
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min.
Typ.
120
9
Max.
Unit
tIRM
200
ns
di /dt = - 50A/ s
µ
VCC = 200 V IF = 12A
F
Lp 0.05 H T = 100 C
≤
µ
°
j
di /dt = - 100A/ s
µ
F
See figure 11
IRM
7.8
A
di /dt = -50A/ s
µ
F
di /dt = - 100A/ s
µ
F
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VRP
C =
T = 100 C
di /dt = - 12A/ s
F
VCC = 200V
L = 12 H
IF = IF (AV)
See figure 12
4.5
°
j
µ
µ
p
VCC
To evaluate the conduction losses use the following equations:
2
VF = 1.47 + 0.026 IF
P = 1.47 x IF(AV) + 0.026 IF (RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
2/5
BYT 12PI-1000
Figure 3. Non repetitive peak surge current
versus overload duration
Figure 4. Thermal impedance versus pulse
width
Figure 5. Voltage drop versus forward current
Figure 6. Recovery charge versus diF/dt-
Figure 8. Peak reverse current versus diF/dt-
Figure 7. Recovery time versus diF/dt-
3/5
BYT 12PI-1000
Figure 9. Peak forward voltage versus diF/dt-
Figure 11. Turn-off switching characteristics (without series inductance).
Figure 12. Turn-off switching characteristics (with series inductance)
4/5
BYT 12PI-1000
PACKAGE MECHANICAL DATA :
Isolated TO220AC Plastic
B
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
C
b2
A
15.20
15.90 0.598
0.625
L
a1
3.75
0.147
F
I
a2 13.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
5.40 0.189
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.212
0.259
0.151
A
B
b1
b2
C
c1
c2
e
10.00
0.61
1.23
4.40
0.49
2.40
4.80
6.20
3.75
l4
c2
a1
l2
F
I
a2
I4 15.80 16.40 16.80 0.622 0.646 0.661
L
l2
M
2.65
1.14
2.95 0.104
1.70 0.044
0.116
0.066
b1
M
c1
2.60
0.102
e
Marking: type number
Cooling method: by conduction (method C)
Weight : 1.86g
Recommended torque value : 80cm. N
Maximum torque value : 100cm. N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronicsproducts arenot authorizedforuseascritical components in lifesupport devices orsystems without expresswrittenapproval
of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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