BYT230PIV-400 [STMICROELECTRONICS]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管


型号：	BYT230PIV-400
厂家：	ST
描述：	FAST RECOVERY RECTIFIER DIODES 快恢复整流二极管整流二极管局域网超快速恢复能力电源超快恢复二极管快速恢复二极管
文件：	总6页 (文件大小：69K)
中文：	中文翻译
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BYT230PIV-400

BYT231PIV-400

FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 30 A

400 V

1.4 V

V_F(max)

trr (max)

BYT231PIV-400

BYT230PIV-400

50 ns

FEATURES AND BENEFITS

VERY LOW REVERSE RECOVERY TIME

VERY LOW SWITCHING LOSSES

LOW NOISE TURN-OFF SWITCHING

INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 V_RMS

Capacitance = 45 pF

ISOTOP^TM

(Plastic)

Inductance < 5 nH

DESCRIPTION

These rectifier devices are suited for free-wheeling

function in converters and motor control circuits.

Packaged in ISOTOP, they are intended for use in

Switch Mode Power Supplies.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

400

I_FRM

I_F(RMS)

I_F(AV)

900

Repetitive peak forward current

RMS forward current

tp=5 µs F=1kHz

Average forward current

Tc = 75°C

δ = 0.5

I_FSM

T_stg

350

- 40 to + 150

150

Surge non repetitive forward current

Storage temperature range

tp = 10 ms Sinusoidal

°C

Maximum operating junction temperature

TM: ISOTOP is a registered trademark of STMicroelectronics.

May 2000 - Ed: 5D

1/6

BYT230PIV-400 / BYT231PIV-400

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_th(j-c)

1.5

0.8

°C/W

Junction to case

Per diode

Total

R_th(c)

0.1

Coupling

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Test Conditions

Min. Typ. Max.

Unit

V_F*

1.5

Forward voltage drop Tj = 25°C

Tj = 100°C

I_F= 30 A

1.4

I_R**

µA

Reverse leakage cur- Tj = 25°C

V_R= V_RRM

rent

Tj = 100°C

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.1 x I_F(AV)+ 0.0095 I_{F (RMS)}

RECOVERY CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ. Max.

Unit

t_rr

100

Tj = 25°C

I_F= 1A V_R= 30V dI_F/dt = - 15A/µs

I_F= 0.5A I_R= 1A I_rr= 0.25A

TURN-OFF SWITCHING CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

t_IRM

75 ns

Maximum reverse

recovery time

dI_F/dt = - 120 A/µs

dI_F/dt = - 240 A/µs

dI_F/dt = - 120 A/µs

dI_F/dt = - 240 A/µs

V_CC= 200 V

I_F= 30 A

L_p0.05 µH

Tj = 100°C

(see fig. 13)

I_RM

Maximum reverse

recovery current

3.3

Turn-off overvoltage

coefficient

Tj = 100°C V_CC= 60V

dI_F/dt = - 30A/µs

(see fig. 14)

I_F= I_F(AV)

L_p= 1µH

V_RP

C =

V_CC

2/6

BYT230PIV-400 / BYT231PIV-400

Fig. 1: Average forward power dissipation versus

Fig. 2: Peak current versus form factor (per diode).

average forward current (per diode).

PF(av)(W)

IM(A)

250

δ = 0.5

δ = 0.2

200

δ = 0.1

=tp/T

δ = 1

150

100

δ = 0.05

P=40W

P=50W

P=30W

P=20W

IF(av) (A)

=tp/T

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 3: Average forward current versus ambient

temperature (δ=0.5, per diode).

Fig. 4: Non repetitive surge peak forward current

versus overload duration (per diode).

IF(av)(A)

IM(A)

200

Rth(j-a)=Rth(j-c)

180

160

140

Tc=50°C

120

Rth(j-a)=5°C/W

Tc=25°C

100

Tc=75°C

δ=0.5

t(s)

=tp/T

Tamb(°C)

1E-3

1E-2

1E-1

1E+0

100

125

150

Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

K=[Zth(j-c)/Rth(j-c)]

200.0

1.0

100.0

Typicalvalues

Tj=100°C

δ = 0.5

0.5

10.0

1.0

Tj=25°C

δ = 0.2

δ = 0.1

Tj=100°C

0.2

Single pulse

=tp/T

tp(s)

VFM(V)

1.0 1.5

0.1

1E-3

0.1

1E-2

1E-1

1E+0

0.0

0.5

2.0

2.5

3/6

BYT230PIV-400 / BYT231PIV-400

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode).

Fig. 8: Recovery charges versus dI_F/dt (per

diode).

C(pF)

Qrr(nC)

100

1000

F=1MHz

Tj=25°C

IF=IF(av)

90% confidence

Tj=100°C

100

dIF/dt(A/µs)

VR(V)

100

200

500

100 200

Fig. 9: Recovery current versus dI_F/dt (per diode).

Fig. 10: Transient peak forward voltage versus

dI_F/dt (per diode).

IRM(A)

VFP(V)

IF=IF(av)

90% confidence

Tj=100°C

IF=IF(av)

90% confidence

Tj=100°C

dIF/dt(A/µs)

100

200

500

100

200

300

400

500

Fig. 11: Forward recovery time versus dI_F/dt (per

diode).

Fig. 12: Dynamic parameters versus junction

temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

tfr(µs)

1.50

IF=IF(av)

90% confidence

Tj=100°C

1.25

1.00

0.75

0.50

IRM

0.75

Qrr

0.50

0.25

dIF/dt(A/µs)

Tj(°C)

0.00

0.25

100

200

300

400

500

100

125

150

4/6

BYT230PIV-400 / BYT231PIV-400

Fig. 13: Turn-off switching characteristics (without

serie inductance).

Fig. 14: Turn-off switching characteristics (with

serie inductance).

DUT

diF/dt

VCC

IRM

VRP

VCC

tIRM

5/6

BYT230PIV-400 / BYT231PIV-400

PACKAGE MECHANICAL DATA

ISOTOP

DIMENSIONS

Millimeters Inches

REF.

Min.

Max.

Min.

Max.

11.80

8.90

7.8

0.75

1.95

37.80

31.50

25.15

23.85

12.20

9.10

8.20

0.85

2.05

38.20

31.70

25.50

24.15

0.465

0.350

0.307

0.030

0.077

1.488

1.240

0.990

0.939

0.480

0.358

0.323

0.033

0.081

1.504

1.248

1.004

0.951

24.80 typ.

0.976 typ.

14.90

12.60

3.50

4.10

4.60

4.00

30.10

15.10

12.80

4.30

5.00

4.30

4.40

30.30

0.587

0.496

0.138

0.161

0.181

0.157

1.185

0.594

0.504

0.169

0.197

0.69

0.173

1.193

Delivery

mode

Ordering type

Marking

Package

Weight

Base qty

BYT230PIV-400 BYT230PIV-400

BYT231PIV-400 BYT231PIV-400

Cooling method: by conduction (C)

Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-

mended for mounting the package on the heatsink and the 4 screws given with the screw version).The

screws supplied with the package are adapted for mounting on a board (or other types of terminals) with

a thickness of 0.6 mm min and 2.2 mm max.

ISOTOP

28 g. (without screws)

Tube

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such informationnor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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6/6

BYT230PIV-400 [STMICROELECTRONICS]

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