BYT260PIV-400 [STMICROELECTRONICS]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管


型号：	BYT260PIV-400
厂家：	ST
描述：	FAST RECOVERY RECTIFIER DIODES 快恢复整流二极管整流二极管局域网快速恢复二极管
文件：	总7页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYT60P-400

BYT260PIV-400 / BYT261PIV-400

FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 60 A

400 V

1.4 V

V_F(max)

trr (max)

BYT261PIV-400

BYT260PIV-400

50 ns

FEATURES AND BENEFITS

VERY LOW REVERSE RECOVERY TIME

VERY LOW SWITCHING LOSSES

LOW NOISE TURN-OFF SWITCHING

INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 V_RMS

Capacitance = 45 pF

ISOTOP^TM

(Plastic)

Inductance < 5 nH

DESCRIPTION

These rectifier devices are suited for free-wheeling

function in converters and motor control circuits.

Packaged in ISOTOP or SOD93, they are

intended for use in Switch Mode Power Supplies.

SOD93

(Plastic)

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

400

Unit

I_FRM

1000

140

100

Repetitive peak forward current

RMS forward current

tp=5 µs F=1kHz

ISOTOP

I_F(RMS)

SOD93

I_F(AV)

I_FSM

Average forward current

δ = 0.5

Tc = 70°C

Tc = 80°C

ISOTOP

SOD93

ISOTOP

SOD93

600

550

Surge non repetitive forward current

tp = 10 ms Sinusoidal

T_stg

- 40 to + 150

150

°C

Storage temperature range

Maximum operating junction temperature

TM: ISOTOP is a registered trademark of STMicroelectronics.

May 2000 - Ed: 4D

1/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_th(j-c)

0.8

0.45

°C/W

Junction to case

ISOTOP

SOD93

Per diode

Total

0.7

0.1

Total

R_th(c)

°C/W

Coupling

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Test Conditions

Min. Typ. Max.

Unit

V_F*

1.5

Forward voltage drop Tj = 25°C

Tj = 100°C

I_F= 60 A

1.4

I_R**

µA

Reverse leakage cur- Tj = 25°C

V_R= V_RRM

rent

Tj = 100°C

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.1 x I_F(AV)+ 0.0045 I_{F (RMS)}

RECOVERY CHARACTERISTICS (per diode)

Symbol

Test Conditions

Min.

Typ. Max.

Unit

t_rr

100

Tj = 25°C

I_F= 1A V_R= 30V dI_F/dt = - 15A/µs

I_F= 0.5A I_R= 1A I_rr= 0.25A

TURN-OFF SWITCHING CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

t_IRM

75 ns

Maximum reverse

recovery time

dI_F/dt = - 240 A/µs

dI_F/dt = - 480 A/µs

dI_F/dt = - 240 A/µs

dI_F/dt = - 480 A/µs

V_CC= 200 V

I_F= 60 A

L_p0.05 µH

Tj = 100°C

(see fig. 13)

I_RM

Maximum reverse

recovery current

3.3

Turn-off overvoltage

coefficient

Tj = 100°C V_CC= 120V

dI_F/dt = - 60A/µs

(see fig. 14)

I_F= I_F(AV)

L_p= 0.8µH

V_RP

C =

V_CC

2/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 1: Average forward power dissipation versus

average forward current (per diode, for ISOTOP).

Fig. 2: Peak current versus form factor (per diode,

for ISOTOP).

PF(av)(W)

IM(A)

350

110

100

δ = 0.5

δ = 0.2

300

P=75W

δ = 0.1

δ = 1

250

=tp/T

δ = 0.05

200

150

100

P=100W

P=50W

P=25W

IF(av) (A)

=tp/T

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 3: Average forward current versus ambient

temperature (δ=0.5, per diode for ISOTOP).

IF(av)(A)

Rth(j-a)=Rth(j-c)

SOD93

ISOTOP

Rth(j-a)=2.5°C/W

=tp/T

Tamb(°C)

100

125

150

Fig. 4-1: Non repetitive surge peak forward current

versus overload duration (SOD93).

Fig. 4-2: Non repetitive surge peak forward current

versus overload duration (per diode, for ISOTOP).

IM(A)

450

IM(A)

400

350

300

Tc=50°C

300

Tc=50°C

250

Tc=25°C

250

Tc=25°C

200

150

Tc=75°C

100

t(s)

δ=0.5

t(s)

1E-3

1E-2

1E-1

1E+0

1E-3

1E-2

1E-1

1E+0

3/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 5-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode

for ISOTOP).

Fig. 5-2: Relative variation of thermal impedance

junction to case versus pulse duration (SOD93).

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ = 0.2

δ = 0.1

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

=tp/T

0.1

1E-3

0.1

1E-3

1E-2

1E-1

1E+0

1E-2

1E-1

1E+0

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode for ISOTOP).

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode for

ISOTOP).

IFM(A)

C(pF)

500

200

F=1MHz

Tj=25°C

Typicalvalues

Tj=100°C

180

100

160

140

120

100

Tj=25°C

Tj=100°C

VR(V)

VFM(V)

100 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 8: Recovery charges versus dI_F/dt (per diode

for ISOTOP).

Fig. 9: Recovery current versus dI_F/dt (per diode

for ISOTOP).

IRM(A)

Qrr(µC)

1.6

IF=IF(av)

90% confidence

Tj=100°C

IF=IF(av)

90% confidence

Tj=100°C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

dIF/dt(A/µs)

0.0

100

200

500

100

200

500

4/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 10: Transient peak forward voltage versus

dI_F/dt (per diode for ISOTOP).

Fig. 11: Forward recovery time versus dI_F/dt (per

diode for ISOTOP).

VFP(V)

tfr(µs)

1.50

IF=IF(av)

90% confidence

Tj=100°C

IF=IF(av)

90% confidence

Tj=100°C

1.25

1.00

0.75

0.50

0.25

dIF/dt(A/µs)

0.00

100

200

300

400

500

100

200

300

400

500

Fig. 12: Dynamic parameters versus junction

temperature.

Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]

1.50

1.25

1.00

IRM

0.75

Qrr

0.50

Tj(°C)

0.25

100

125

150

Fig. 13: Turn-off switching characteristics (without

serie inductance).

Fig. 14: Turn-off switching characteristics (with

serie inductance).

DUT

diF/dt

VCC

VRP

IRM

VCC

tIRM

5/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

PACKAGE MECHANICAL DATA

ISOTOP

DIMENSIONS

Millimeters Inches

REF.

Min.

Max.

Min.

Max.

11.80

8.90

12.20

9.10

0.465

0.350

0.307

0.030

0.077

1.488

1.240

0.990

0.939

0.480

0.358

0.323

0.033

0.081

1.504

1.248

1.004

0.951

7.8

8.20

0.75

0.85

1.95

2.05

37.80

31.50

25.15

23.85

38.20

31.70

25.50

24.15

24.80 typ.

0.976 typ.

14.90

12.60

3.50

4.10

4.60

4.00

15.10

12.80

4.30

5.00

4.30

0.587

0.496

0.138

0.161

0.181

0.157

0.594

0.504

0.169

0.197

0.69

6/7

BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

PACKAGE MECHANICAL DATA

SOD93 Plastic

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

REF.

4.70

1.17

4.90 0.185

1.37 0.046

0.193

0.054

2.50

1.27

0.098

0.050

0.50

1.10

0.78 0.020

1.30 0.043

0.031

0.051

1.75

0.069

10.80

14.70

11.10 0.425

15.20 0.578

12.20

0.437

0.598

0.480

0.638

16.20

18.0

0.709

1.220

3.95

4.00

4.15 0.156

4.10 0.157

0.163

0.161

31.00

Delivery

mode

Ordering type

Marking

Package

Weight

Base qty

BYT60P-400

SOD93

ISOTOP

3.79 g.

Tube

BYT260PIV-400 BYT260PIV-400

BYT261PIV-400 BYT261PIV-400

Cooling method: by conduction (C)

28 g. (without screws)

Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws

recommended for mounting the package on the heatsink and the 4 screws given with the screw ver-

sion).The screws supplied with the package are adapted for mounting on a board (or other types of

terminals) with a thickness of 0.6 mm min and 2.2 mm max.

Recommended torque value (SOD93): 0.8 N.m.

Maximum torque value (SOD93): 1.0 N.m.

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such informationnor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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7/7

BYT260PIV-400 [STMICROELECTRONICS]

相关型号：

BYT260PIV600

BYT260PIV800

BYT261PI-1000

BYT261PI-200

BYT261PI-300

BYT261PI-400

BYT261PI-600

BYT261PI-800

BYT261PI1000

BYT261PI200

BYT261PI300

BYT261PI400