BYW100-200 [STMICROELECTRONICS]
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE; 高效率快恢复整流二极管
| 型号： | BYW100-200 |
| 厂家： | 
ST |
| 描述： | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE |
| 文件： | 总5页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
1.5 A
200 V
150 °C
0.85 V
Tj (max)
VF (max)
FEATURES AND BENEFITS
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
F126
LOW FORWARD AND REVERSE RECOVERY
TIMES
(JEDEC DO-204AC)
THE SPECIFICATIONS
AND CURVES
ENABLE THE DETERMINATION OF trr AND
IRM AT 100°C UNDER USERS CONDITIONS
DESCRIPTION
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive peak reverse voltage
Value
Unit
VRRM
200
V
IFRM
IF(AV)
IFSM
Tstg
Tj
80
1.5
A
A
Repetitive peak forward current *
Average forward current *
tp = 5 µs F = 1KHz
Ta = 95°C δ = 0.5
tp=10 ms sinusoidal
50
A
Surge non repetitive forward current
Storage temperature range
-65 +150
+ 150
230
°C
°C
°C
Maximum operating junction temperature
TL
Maximum lead temperature for soldering during 10s at 4mm from
case
* On infinite heatsink with 10mm lead length.
October 1999 - Ed: 3A
1/5
BYW100-200
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a)
45
°C/W
Junction to ambient *
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR *
10
µA
Reverse leakage
current
VR = VRRM
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
0.5
1.2
mA
V
VF **
Forward voltage drop IF = 4.5 A
IF = 1.5 A
0.78
0.85
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the maximum2conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.075 IF (RMS)
RECOVERY CHARACTERISTICS
Symbol
Tests conditions
Min. Typ. Max.
Unit
trr
35
ns
IF = 1 A
dIF/dt = - 50 A/µs VR = 30 V
dIF/dt = -50 A/µs
Tj = 25°C
Tj = 25°C
tfr
30
ns
IF = 1.5 A
Measured at 1.1 x VF max.
VFP
Qrr
5
V
IF = 1.5 A
IF = 1.5 A
dIF/dt = -50 A/µs
Tj = 25°C
10
nC
dIF/dt = -20 A/µs VR ≤ 30 V
Tj = 25°C
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
PF(av)(W)
1.8
1.6
δ = 0.2
δ = 0.05
δ = 1
δ = 0.5
δ = 0.1
Rth(j-a)=Rth(j-l)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
Rth(j-a)=100°C/W
0.8
0.6
0.4
T
0.2
tp
=tp/T
δ
IF(av) (A)
Tamb(°C)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
25
50
75
100
125
150
2/5
BYW100-200
Fig. 3: Thermal resistance versus lead length.
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm).
Rth(°C/W)
Zth(j-a)/Rth(j-a)
110
100
90
80
70
1.00
Rth(j-a)
δ = 0.5
δ = 0.2
Rth(j-l)
60
0.10
δ = 0.1
50
40
30
20
Single pulse
tp(s)
10
0
Lleads(mm)
0.01
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
5
10
15
20
25
Fig. 5: Forward voltage drop versus forward
current (maximum values).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
C(pF)
50.00
20
F=1MHz
Tj=25°C
Tj=100°C
(Typical values)
10
5
10.00
Tj=25°C
Tj=100°C
1.00
2
VR(V)
VFM(V)
0.10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
1
10
100
200
Fig. 7: Reverse recovery time versus dIF/dt .
Fig. 8: Peak reverse recovery current versus
dIF/dt.
trr(ns)
IRM(A)
2.5
150
IF=1.5A
VR=30V
90% confidence
2.0
IF=1.5A
VR=30V
90% confidence
Tj=100°C
100
50
0
1.5
Tj=100°C
Tj=25°C
1.0
Tj=25°C
0.5
dIF/dt(A/µs)
dIF/dt(A/µs)
0.0
1
10
100
1
10
100
3/5
BYW100-200
Fig. 9: Dynamic parameters versus junction
temperature.
%
250
Qrr
200
IRM
150
trr
100
25
50
75
100
125
Tj(°C)
4/5
BYW100-200
PACKAGE MECHANICAL DATA
F126
C
C
A
D
D
B
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
6.05 6.20 6.35 0.238 0.244 0.250
A
B
C
D
2.95 3.00 3.05 0.116 0.118 0.120
26
31 1.024
1.220
0.76 0.81 0.86 0.030 0.032 0.034
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
BYW100-200
BYW100-200
BYW100-200
F126
F126
0.393g
0.393g
1000
6000
Ammopack
BYW100-200RL
Tape and reel
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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