BYW80-200 [STMICROELECTRONICS]
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES; 高效快速恢复整流二极管
| 型号： | BYW80-200 |
| 厂家： | 
ST |
| 描述： | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYW80(F)-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLESWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHEENERGY CAPABILITY
INSULATEDVERSION(ISOWATT220AC):
Insulatingvoltage = 2000 V DC
Capacitance = 12 pF
A
A
K
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand high frequency DC to DC converters.
Packaged in TO-220AC, or ISOWATT220AC this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
isolated
ISOWATT220AC
TO-220AC
(Plastic)
(Plastic)
BYW80-200
BYW80F-200
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IF(RMS)
20
A
A
RMS forward current
IF(AV)
10
10
TO-220AC
Tc=120°C
Tc=95°C
Average forward current
δ = 0.5
ISOWATT220AC
IFSM
100
A
tp=10ms
sinusoidal
Surge non repetitiveforward current
Tstg
Tj
- 65 to + 150
- 65 to + 150
°C
C
Storage and junction temperature range
°
Symbol
Parameter
Value
Unit
VRRM
200
V
Repetitivepeak reverse voltage
October 1999 - Ed: 2D
1/6
BYW80(F)-200
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
Rth (j-c)
2.5
°C/W
TO-220AC
Junction to case
4.7
ISOWATT220AC
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
IR *
10
1
µA
mA
V
Tj = 25°C
Tj = 100°C
Tj = 125°C
VR = VRRM
VF **
0.85
1.05
1.15
IF = 7 A
°
Tj = 125 C
IF = 15 A
IF = 15 A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conductionlosses use the following equation :
2
P = 0.65 x IF(AV) + 0.027 x IF (RMS)
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
trr
Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
25
ns
µ
IF = 1A
dIF/dt = -50A/ s
35
VR = 30V
tfr
Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
15
2
ns
V
°
VFP
Tj = 25 C
IF = 1A
tr = 10 ns
2/6
BYW80(F)-200
Fig.1 : Average forward power dissipation versus
Fig.2 : Peak current versus form factor.
average forward current.
P
I
F(av)(W)
M(A)
14
200
175
150
125
100
75
=0.5
=1
T
=0.2
=0.1
12
10
8
=0.05
I
M
P=10W
=tp/T
tp
6
T
P=5W
4
50
P=15W
2
25
I
=tp/T
tp
F(av)(A)
0
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Fig.3 : Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
Tj=125 o
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IFM(A)
0.1
1
10
100
Fig.4 :
Fig.5 :
Relative variation of thermal impedance
junction to case versus pulse duration.
(ISOWATT220AC)
Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220AC)
K
K
1
1.0
Zth(j-c) (tp.
K =
)
Zth(j-c) (tp. )
K =
Rth(j-c)
Rth(j-c)
0.8
0.6
0.4
=0.5
=0.5
0.5
=0.2
= 0.1
=0 .2
T
T
0.2
0.1
Single pulse
Single pulse
=0 .1
0.2
0
=tp/T
=tp/T
1.0E+00
tp
1.0E+00
tp
tp(s)
tp(s)
1.0E-03
1.0E-02
1.0E-01
1.0E-03
1.0E-02
1.0E-01
1.0E+01
3/6
BYW80(F)-200
Fig.6 :
versus overload duration.
(TO-220AC)
Fig.7 :
Non repetitive surge peak forward current
versus overload duration.
(ISOWATT220AC)
Non repetitive surge peak forward current
I
I
M(A)
M(A)
80
70
60
50
40
30
100
90
80
70
60
50
40
o
Tc=25
Tc=75
C
o
Tc=25
Tc=50
C
o
C
o
C
o
30
Tc=120
C
IM
IM
20
o
20
Tc=95
C
t
t
10
10
=0.5
=0.5
t(s)
t(s)
0
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Fig.8
temperature.
:
Fig.9
temperature.
:
Average current versus ambient
Average current versus ambient
(duty cycle : 0.5) (TO-220AC)
(duty cycle : 0.5) (ISOWATT220AC)
I
I
F(av)(A)
F(av)(A)
12
11
12
11
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
o
Rth(j-a)=15 C/W
o
Rth(j-a)=15 C/W
=0.5
=0.5
T
T
=tp/T
=tp/T
tp
o
tp
o
Tamb( C)
Tamb( C)
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Fig.10 :
voltage applied (Typical values).
Fig.11 :
Recoverycharges versus dIF/dt.
Junction capacitance versus reverse
C(pF)
QRR(nC)
o
IF=IF(av)
90% CONFIDENCE Tj=125
C
dIF/dt(A/us)
VR(V)
4/6
BYW80(F)-200
Fig.12 :
Fig.13 :
Dynamic parameters versus junction
temperature.
Peakreverse current versus dIF/dt.
O
I
]
QRR;IRM[Tj]/QRR;IRM[Tj=125 C
RM(A)
o
90% CONFIDENCE Tj=125
C
IF=IF(av)
IRM
QRR
o
dIF/dt(A/us)
Tj( C)
PACKAGE MECHANICAL DATA
ISOWATT220AC(JEDEC outline)
DIMENSIONS
A
H
B
REF.
Millimeters
Inches
Min. Max.
Min.
Max.
A
B
4.40
2.50
2.40
0.40
0.75
1.15
4.95
4.60
2.70
2.75
0.70
1.00
1.70
5.20
0.173 0.181
0.098 0.106
0.094 0.108
0.016 0.028
0.030 0.039
0.045 0.067
0.195 0.205
D
L6
E
L7
L2
F
L3
F1
G
F1
H
10.00 10.40 0.394 0.409
16.00typ. 0.63 typ.
L2
L3
L6
L7
Diam
28.60 30.60 1.125 1.205
15.90 16.40 0.626 0.646
9.00
3.00
9.30
3.20
0.354 0.366
0.118 0.126
F
D
E
G
Cooling method : C
Marking : Type number
Weight : 2 g
Recommended torque value: 0.55m.N
Maximum torque value : 0.70m.N
5/6
BYW80(F)-200
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
DIMENSIONS
Millimeters Inches
Min. Max.
REF.
Min.
Max.
H2
A
A
C
4.40
1.23
2.40
0.49
0.61
1.14
4.95
4.60
1.32
2.72
0.70
0.88
1.70
5.15
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
C
L5
D
L7
Ø I
E
F
L6
F1
G
L2
D
H2
L2
L4
L5
L6
L7
L9
M
10.00 10.40 0.393 0.409
16.40 typ. 0.645 typ.
13.00 14.00 0.511 0.551
2.65 2.95 0.104 0.116
15.25 15.75 0.600 0.620
L9
F1
L4
M
F
E
6.20
3.50
6.60
3.93
0.244 0.259
0.137 0.154
0.102 typ.
G
2.6 typ.
Diam. I 3.75
3.85
0.147 0.151
Cooling method : C
Marking : Type number
Weight : 1.86 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringementof patents or other rights of thirdparties which may result fromits use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
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