BZV47C27 [STMICROELECTRONICS]
2W ZENER DIODES; 2W齐纳二极管型号: | BZV47C27 |
厂家: | ST |
描述: | 2W ZENER DIODES |
文件: | 总4页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BZV47C5V1 200
2W ZENER DIODES
FEATURES
VOLTAGERANGE : 5.1 V to 200 V
HERMETICALLY SEALEDPLASTICCASE :
F126 PACKAGE
HIGH SURGE CAPABILITY: 55 W (10 ms) .
DESCRIPTION
F126
2 W silicon Zener diodes.
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
P
Power dissipationon infinite heatsink
T
amb
= 55°C
2
W
T
T
- 65 to + 175
175
C
°
°C
Storage temperaturerange
Maximum junction temperature
stg
j
T
230
°C
Maximum lead temperaturefor soldering during 10s at 5mm
from case
L
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
(j-l)
60
°C/W
Junction to lead
th
(j-a)
100
°C/W
Junction to ambient on printed circuit on recommended pad
layout
th
January 1998 Ed : 2
1/4
BZV47C5V1 / BZV47C200
ELECTRICAL CHARACTERISTIC (Tamb= 25°C)
TYPES
VZT @ IZT
rZK/ IZK
max.
IZT
VZ
typ.
IR / VR
max.
VR
IZM
=55°C
(2)
IZSM
min.
(1)
max.
(1)
T
amb
(1)
(3)
A
V
V
Ω
mA
10-4/°C
µA
V
mA
BZV47C5V1
4.8
5.2
5.8
7
5.4
6
5
2
100
100
100
100
50
50
50
25
25
25
25
25
25
10
10
10
10
5
1
5
1
370
330
300
250
185
155
130
105
94
7.8
7.1
6.4
5.4
4
BZV47C5V6
BZV47C6V2
BZV47C7V5
BZV47C10
2.5
3.2
4.5
5.5
6.5
7
5
1
6.6
2
5
1
7.9
2
5
2
9.4
11.4
13.8
16.8
18.8
20.8
22.8
25.1
28
10.6
12.7
15.6
19.1
21.2
23.3
25.6
28.9
32
4
5
7.6
BZV47C12
7
1
9.1
3.3
2.7
2.2
2
BZV47C15
10
15
15
15
15
15
15
40
40
45
80
200
300
350
1
11.4
13.7
15.2
16.7
18.2
20.5
22.8
27.4
29.6
35.7
51.7
76
BZV47C18
7.5
7.5
8
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
BZV47C20
BZV47C22
86
1.8
1.7
1.5
1.3
1.1
1
BZV47C24
8
78
BZV47C27
8.5
8.5
8.5
9
69
BZV47C30
62
BZV47C36
34
38
52
BZV47C39
37
41
48
BZV47C47
44
50
9
40
0.85
0.59
0.4
0.27
0.20
BZV47C68
64
72
9
27
BZV47C100
BZV47C150
BZV47C200
Note 1 : Pulse test : tp ≤ 50ms
94
106
156
212
9
18
138
188
5
9.5
9.5
114
152
12.8
9.4
5
Note 2 : On infiniteheatsink : L = 10mm
Note 3 : rectangular waveform (tp = 10ms)
Forward voltage drop : V ≤ 1.2 V (Tamb = 25°C, I = 500mA)
F
F
Fig. 1 : Power dissipation versus ambient
temperature.
Fig. 2 :Thermal resistance versus lead length.
2/4
BZV47C5V1 / BZV47C200
Fig. 3 : Relative variation of thermal impedance
junction to ambient versus pulse duration (PC
board FR4, Lleads = 10mm).
Fig. 4 : Junction capacitance versus reverse
voltage applied (typical values).
Fig. 6 : Leakage current versus regulation volt-
age (typical values).
Fig. 5 : Peak forward current versus peak forward
voltage drop (typical values).
IR(µA)
1E+2
Tj = 150°C
VR = 0.75*VZT
1E+1
1E+0
1E-1
1E-2
VZT (V)
1E-3
1
10
100
200
Fig. 8 : Peak pulse power versus pulse duration
(rectangularwaveform, maximum values).
Fig. 7 : Differential resistance versus regulation
voltage (typical values).
3/4
BZV47C5V1 / BZV47C200
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectionaltypes only).
ORDER CODE
BZV47C
5V1
Type
Nominal Voltage
PACKAGE MECHANICAL DATA
F126 (Plastic)
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
B
6.05
6.20
6.35 0.238 0.244 0.250
26
31 1.024 1.220
C
2.95
0.76
3.00
0.81
3.05 0.116 0.118 0.120
0.86 0.030 0.032 0.034
D
L1
1.27
0.050
Note1 : Theleadisnotcontrolled within zoneL1.
Packaging : standard packaging is in tapeand reel.
Weight = 0.40 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implicationor otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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