BZW50-120BRL [STMICROELECTRONICS]

5000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R6, 2 PIN;
BZW50-120BRL
型号: BZW50-120BRL
厂家: ST    ST
描述:

5000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R6, 2 PIN

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®
BZW50-10,B/180,B  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 5000 W (10/1000µs)  
STAND-OFF VOLTAGE RANGE :  
From 10V to 180V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
R6  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
5000  
6.5  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
W
IFSM  
Non repetitive surge peak forward current  
for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
500  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s at 5mm  
from case  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
15  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
65  
February 2003- Ed : 4A  
1/5  
BZW50-10,B/180,B  
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)  
I
I
F
Symbol  
VRM  
VBR  
VCL  
IRM  
Parameter  
Stand-off voltage  
V
V
BR  
CL  
Breakdown voltage  
V
V
F
RM  
Clamping voltage  
V
I
I
RM  
Leakage current @ VRM  
Peak pulse current  
IPP  
αT  
Voltage temperature coefficient  
Forward voltage drop  
PP  
VF  
Types  
IRM @ VRM  
VBR  
@
IR  
VCL @ IPP  
max  
10/1000µs  
VCL @ IPP  
max  
8/20µs  
αT  
C
max  
min  
max  
typ  
note2  
note3 note4  
10-4/ °C pF  
Unidirectional Bidirectional  
µA  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
10  
V
mA  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
A
V
A
BZW50-10  
BZW50-12  
BZW50-15  
BZW50-18  
BZW50-22  
BZW50-27  
BZW50-33  
BZW50-39  
BZW50-47  
BZW50-56  
BZW50-68  
BZW50-82  
BZW50-100  
BZW50-120  
BZW50-150  
BZW50-180  
BZW50-10B  
BZW50-12B  
BZW50-15B  
BZW50-18B  
BZW50-22B  
BZW50-27B  
BZW50-33B  
BZW50-39B  
BZW50-47B  
BZW50-56B  
BZW50-68B  
BZW50-82B  
BZW50-100B  
BZW50-120B  
BZW50-150B  
BZW50-180B  
11.1  
13.3  
16.6  
20  
18.8  
22  
266  
227  
186  
155  
127  
103  
85  
23.4  
28  
2564  
2143  
1714  
1446  
1177  
968  
789  
667  
556  
465  
382  
317  
263  
219  
175  
146  
7.8  
8.4  
8.8  
9.2  
9.6  
9.8  
10  
24000  
18500  
13500  
11500  
8500  
12  
15  
26.9  
32.2  
39.4  
48.3  
59  
35  
18  
41.5  
51  
22  
24.4  
30  
27  
62  
7000  
33  
36.6  
43.3  
52  
76  
5750  
39  
69.4  
83.2  
99.6  
121  
145  
179  
215  
269  
322  
72  
90  
10.1 4800  
10.3 4100  
10.4 3400  
10.5 3000  
10.6 2600  
10.7 2300  
10.8 1900  
10.8 1700  
10.8 1500  
47  
60.1  
50  
108  
129  
157  
189  
228  
274  
343  
410  
56  
62.2  
75.6  
91  
68  
41  
82  
34  
100  
120  
150  
180  
111  
133  
166  
200  
28  
23  
19  
16  
Fig. 1: Peak pulse power dissipation versus initial  
junction temperature (printed circuit board).  
% I  
PP  
10  
s
100  
50  
0
PULSE WAVEFORM 10/1000  
s
t
1000  
s
Note 2 : Pulse test: t < 50 ms.  
p
Note 3 : V  
Note 4 :  
= αT (T  
- 25) V (25°C)  
* BR  
BR  
V = 0 V, F = 1 MHz. For bidirectional types,  
R
*
amb  
capacitance value is divided by 2.  
2/5  
BZW50-10,B/180,B  
Fig. 2 : Peak pulse power versus exponential pulse duration.  
Ppp(W)  
1E7  
°
Tj initial = 25øC  
1E6  
1E5  
1E4  
1E3  
1E2  
tp (ms ) EXPO.  
0.001  
0.01  
0.1  
1
10  
100  
Fig. 3 :  
Clamping voltage versus peak pulse current.  
Exponential waveform  
tp = 20 µs________  
tp = 1 ms—————-  
tp = 10 ms...............  
Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.  
The given results may be extrapolated for other junction temperatures by using the following formula :  
VBR = αT* (Tamb -25) * VBR (25°C).  
For intermediate voltages, extrapolate the given results.  
3/5  
BZW50-10,B/180,B  
Fig. 4b : Capacitance versus reverse applied  
voltage for bidirectional types (typical values).  
Fig. 4a : Capacitance versus reverse applied  
voltage for unidirectional types (typical values).  
Fig. 6 : Transient thermal impedance junc-  
tion-ambient versus pulse duration (For FR4 PC  
Board with L lead = 10mm).  
Fig. 5 : Peak forward voltage drop versus peak  
forward current (typical values for unidirectional  
types).  
Note : Multiply by 2 for units with V  
> 220V.  
BR  
Fig. 7 : Relative variation of leakage current  
versus junction temperature.  
4/5  
BZW50-10,B/180,B  
ORDER CODE  
BZW 50 - 10 B RL  
PACKAGING:  
' ' = Ammopack tape  
'RL' = Tape & reel  
5000W  
BIDIRECTIONAL  
No suffix: unidirectional  
STAND-OFF VOLTAGE  
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).  
PACKAGE MECHANICAL DATA  
R6 (Plastic)  
B
D
A
B
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
A
B
C
D
8.6  
25.4  
8.6  
9.1 0.338  
1
0.358  
C
9.1 0.338  
1.3 0.047  
0.358  
0.051  
1.2  
Packaging : standard packaging is tape and reel.  
Weight = 2.048 g.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
5/5  

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