D44H8G [STMICROELECTRONICS]
Complementary Silicon Power Transistors; 互补硅功率晶体管型号: | D44H8G |
厂家: | ST |
描述: | Complementary Silicon Power Transistors |
文件: | 总5页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
D44H Series (NPN),
D45H Series (PNP)
Preferred Devices
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
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10 AMP COMPLEMENTARY
SILICON POWER
Features
• Low Collector−Emitter Saturation Voltage
TRANSISTORS 60, 80 VOLTS
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
MARKING
DIAGRAM
4
MAXIMUM RATINGS
TO−220AB
CASE 221A−09
Rating
Symbol
Value
Unit
D4xHyyG
AYWW
Collector−Emitter Voltage
D44H8, D45H8
V
Vdc
CEO
STYLE 1
1
2
3
60
80
D44H11, D45H11
Emitter Base Voltage
V
5.0
Vdc
Adc
EB
D4xHyy = Device Code
x = 4 or 5
Collector Current
− Continuous
I
C
yy = 8 or 11
10
20
− Peak (Note 1)
A
Y
= Assembly Location
= Year
Total Power Dissipation
P
W
D
WW
G
= Work Week
= Pb−Free Package
@ T = 25°C
70
2.0
C
@ T = 25°C
A
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
ORDERING INFORMATION
†
50 Units/Rail
50 Units/Rail
Device
Package
Shipping
THERMAL CHARACTERISTICS
Characteristic
D44H8
TO−220
Symbol
Max
1.8
Unit
_C/W
_C/W
_C
D44H8G
TO−220
(Pb−Free)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
R
q
JA
62.5
275
D44H11
TO−220
50 Units/Rail
50 Units/Rail
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
D44H11G
TO−220
(Pb−Free)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
D45H8
TO−220
50 Units/Rail
50 Units/Rail
D45H8G
TO−220
(Pb−Free)
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
D45H11
TO−220
50 Units/Rail
50 Units/Rail
D45H11G
TO−220
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 9
D44H/D
D44H Series (NPN),
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I = 30 mAdc, I = 0 Adc)
D44H8, D45H8
D44H11, D45H11
V
60
80
−
−
−
−
Vdc
CEO(sus)
C
B
Collector Cutoff Current (V = Rated V
, V = 0)
I
I
−
−
−
−
10
10
mA
mA
CE
CEO
BE
CES
Emitter Cutoff Current (V = 5.0 Vdc)
EB
EBO
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(V = 1.0 Vdc, I = 2.0 Adc)
60
40
−
−
−
−
CE
C
(V = 1.0 Vdc, I = 4.0 Adc)
CE
C
Collector−Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.4 Adc)
V
V
Vdc
Vdc
CE(sat)
C
B
−
−
−
−
1.0
1.5
Base−Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.8 Adc)
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Collector Capacitance
C
cb
pF
(V = 10 Vdc, f
CB
= 1.0 MHz)
D44H Series
D45H Series
90
160
test
−
−
−
−
Gain Bandwidth Product
(I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)
f
MHz
T
D44H Series
D45H Series
C
CE
−
−
50
40
−
−
SWITCHING TIMES
Delay and Rise Times
t + t
ns
ns
ns
d
r
(I = 5.0 Adc, I = 0.5 Adc)
D44H Series
D45H Series
C
B1
−
−
300
135
−
−
Storage Time
t
s
(I = 5.0 Adc, I = I = 0.5 Adc)
D44H Series
D45H Series
C
B1
B2
−
−
500
500
−
−
Fall Time
t
f
(I = 5.0 Adc, I = 102 = 0.5 Adc)
D44H Series
D45H Series
C
B1
−
−
140
100
−
−
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2
D44H Series (NPN),
1000
1000
V = 1 V
CE
V
= 1 V
CE
25°C
125°C
−40°C
125°C
25°C
100
100
−40°C
10
10
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000
1000
V
= 5 V
V
= 5 V
CE
CE
25°C
125°C
125°C
25°C
−40°C
100
100
−40°C
10
10
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. D44H11 DC Current Gain
Figure 4. D45H11 DC Current Gain
0.40
0.35
0.30
0.25
0.6
0.5
0.4
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
V
@ I /I = 10
C B
CE(sat)
−40°C
−40°C
0.20
0.15
0.10
25°C
25°C
125°C
125°C
0.1
0
0.05
0
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. D44H11 ON−Voltage
Figure 6. D45H11 ON−Voltage
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3
D44H Series (NPN),
1.2
1.0
0.8
0.6
0.4
1.4
V
V
@ I /I = 10
C B
@ I /I = 10
BE(sat)
BE(sat)
C B
1.2
1.0
0.8
0.6
0.4
−40°C
−40°C
125°C
125°C
25°C
25°C
0.2
0
0.2
0
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. D44H11 ON−Voltage
Figure 8. D45H11 ON−Voltage
100
T
A
T
C
50
30
20
1.0 ms
3.0 60
2.0 40
100 ms
10
10 ms
5.0
3.0
2.0
T
≤ 70° C
dc
C
1.0 ms
T
C
DUTY CYCLE ≤ 50%
1.0
0.5
T
A
1.0 20
0.3
0.2
D44H/45H8
D44H/45H10,11
0.1
0
0
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
0
20
40
60
80
100
120 140 160
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
T, TEMPERATURE (°C)
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
Figure 10. Power Derating
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 1.56°C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
1
T
− T = P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t /t
1
2
SINGLE PULSE
0.05 0.1
0.01
0.01 0.02
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0 k
t, TIME (ms)
Figure 11. Thermal Response
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4
D44H Series (NPN),
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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