D44H8G [STMICROELECTRONICS]

Complementary Silicon Power Transistors; 互补硅功率晶体管
D44H8G
型号: D44H8G
厂家: ST    ST
描述:

Complementary Silicon Power Transistors
互补硅功率晶体管

晶体 晶体管 开关 局域网
文件: 总5页 (文件大小:68K)
中文:  中文翻译
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D44H Series (NPN),  
D45H Series (PNP)  
Preferred Devices  
Complementary Silicon  
Power Transistors  
These series of plastic, silicon NPN and PNP power transistors can  
be used as general purpose power amplification and switching such as  
output or driver stages in applications such as switching regulators,  
converters and power amplifiers.  
http://onsemi.com  
10 AMP COMPLEMENTARY  
SILICON POWER  
Features  
Low Collector−Emitter Saturation Voltage  
TRANSISTORS 60, 80 VOLTS  
V
CE(sat)  
= 1.0 V (Max) @ 8.0 A  
Fast Switching Speeds  
Complementary Pairs Simplifies Designs  
Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
Rating  
Symbol  
Value  
Unit  
D4xHyyG  
AYWW  
Collector−Emitter Voltage  
D44H8, D45H8  
V
Vdc  
CEO  
STYLE 1  
1
2
3
60  
80  
D44H11, D45H11  
Emitter Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
D4xHyy = Device Code  
x = 4 or 5  
Collector Current  
− Continuous  
I
C
yy = 8 or 11  
10  
20  
− Peak (Note 1)  
A
Y
= Assembly Location  
= Year  
Total Power Dissipation  
P
W
D
WW  
G
= Work Week  
= Pb−Free Package  
@ T = 25°C  
70  
2.0  
C
@ T = 25°C  
A
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
50 Units/Rail  
50 Units/Rail  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
D44H8  
TO−220  
Symbol  
Max  
1.8  
Unit  
_C/W  
_C/W  
_C  
D44H8G  
TO−220  
(Pb−Free)  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
62.5  
275  
D44H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
L
D44H11G  
TO−220  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
D45H8  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H8G  
TO−220  
(Pb−Free)  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
D45H11  
TO−220  
50 Units/Rail  
50 Units/Rail  
D45H11G  
TO−220  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 9  
D44H/D  
 
D44H Series (NPN),  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage  
(I = 30 mAdc, I = 0 Adc)  
D44H8, D45H8  
D44H11, D45H11  
V
60  
80  
Vdc  
CEO(sus)  
C
B
Collector Cutoff Current (V = Rated V  
, V = 0)  
I
I
10  
10  
mA  
mA  
CE  
CEO  
BE  
CES  
Emitter Cutoff Current (V = 5.0 Vdc)  
EB  
EBO  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(V = 1.0 Vdc, I = 2.0 Adc)  
60  
40  
CE  
C
(V = 1.0 Vdc, I = 4.0 Adc)  
CE  
C
Collector−Emitter Saturation Voltage  
(I = 8.0 Adc, I = 0.4 Adc)  
V
V
Vdc  
Vdc  
CE(sat)  
C
B
1.0  
1.5  
Base−Emitter Saturation Voltage  
(I = 8.0 Adc, I = 0.8 Adc)  
BE(sat)  
C
B
DYNAMIC CHARACTERISTICS  
Collector Capacitance  
C
cb  
pF  
(V = 10 Vdc, f  
CB  
= 1.0 MHz)  
D44H Series  
D45H Series  
90  
160  
test  
Gain Bandwidth Product  
(I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)  
f
MHz  
T
D44H Series  
D45H Series  
C
CE  
50  
40  
SWITCHING TIMES  
Delay and Rise Times  
t + t  
ns  
ns  
ns  
d
r
(I = 5.0 Adc, I = 0.5 Adc)  
D44H Series  
D45H Series  
C
B1  
300  
135  
Storage Time  
t
s
(I = 5.0 Adc, I = I = 0.5 Adc)  
D44H Series  
D45H Series  
C
B1  
B2  
500  
500  
Fall Time  
t
f
(I = 5.0 Adc, I = 102 = 0.5 Adc)  
D44H Series  
D45H Series  
C
B1  
140  
100  
http://onsemi.com  
2
D44H Series (NPN),  
1000  
1000  
V = 1 V  
CE  
V
= 1 V  
CE  
25°C  
125°C  
−40°C  
125°C  
25°C  
100  
100  
−40°C  
10  
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 1. D44H11 DC Current Gain  
Figure 2. D45H11 DC Current Gain  
1000  
1000  
V
= 5 V  
V
= 5 V  
CE  
CE  
25°C  
125°C  
125°C  
25°C  
−40°C  
100  
100  
−40°C  
10  
10  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 3. D44H11 DC Current Gain  
Figure 4. D45H11 DC Current Gain  
0.40  
0.35  
0.30  
0.25  
0.6  
0.5  
0.4  
0.3  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
V
@ I /I = 10  
C B  
CE(sat)  
−40°C  
−40°C  
0.20  
0.15  
0.10  
25°C  
25°C  
125°C  
125°C  
0.1  
0
0.05  
0
0.1  
1
10  
0.1  
1
10  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 5. D44H11 ON−Voltage  
Figure 6. D45H11 ON−Voltage  
http://onsemi.com  
3
D44H Series (NPN),  
1.2  
1.0  
0.8  
0.6  
0.4  
1.4  
V
V
@ I /I = 10  
C B  
@ I /I = 10  
BE(sat)  
BE(sat)  
C B  
1.2  
1.0  
0.8  
0.6  
0.4  
−40°C  
−40°C  
125°C  
125°C  
25°C  
25°C  
0.2  
0
0.2  
0
0.1  
1
10  
0.1  
1
10  
I , COLLECTOR CURRENT (AMPS)  
C
I , COLLECTOR CURRENT (AMPS)  
C
Figure 7. D44H11 ON−Voltage  
Figure 8. D45H11 ON−Voltage  
100  
T
A
T
C
50  
30  
20  
1.0 ms  
3.0 60  
2.0 40  
100 ms  
10  
10 ms  
5.0  
3.0  
2.0  
T
70° C  
dc  
C
1.0 ms  
T
C
DUTY CYCLE 50%  
1.0  
0.5  
T
A
1.0 20  
0.3  
0.2  
D44H/45H8  
D44H/45H10,11  
0.1  
0
0
1.0  
2.0 3.0 5.0 7.0 10  
20 30  
50 70 100  
0
20  
40  
60  
80  
100  
120 140 160  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
T, TEMPERATURE (°C)  
Figure 9. Maximum Rated Forward Bias  
Safe Operating Area  
Figure 10. Power Derating  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
0.1  
P
(pk)  
Z
= r(t) R  
q
JC  
q
JC(t)  
0.05  
0.02  
0.07  
0.05  
R
= 1.56°C/W MAX  
q
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
0.03  
0.02  
t
2
1
T
− T = P  
C
Z
q
(pk) JC(t)  
0.01  
J(pk)  
DUTY CYCLE, D = t /t  
1
2
SINGLE PULSE  
0.05 0.1  
0.01  
0.01 0.02  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500 1.0 k  
t, TIME (ms)  
Figure 11. Thermal Response  
http://onsemi.com  
4
D44H Series (NPN),  
PACKAGE DIMENSIONS  
TO−220  
CASE 221A−09  
ISSUE AA  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
−T−  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
S
B
F
T
4
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
−−−  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
−−−  
A
K
Q
Z
A
B
C
D
F
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
−−−  
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080  
2.04  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
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PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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For additional information, please contact your  
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D44H/D  

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