DALC112S1 [STMICROELECTRONICS]
LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION; 低电容二极管阵列的ESD保护型号: | DALC112S1 |
厂家: | ST |
描述: | LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION |
文件: | 总3页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DALC112S1
LOW CAPACITANCE DIODE
ARRAY FOR ESD PROTECTION
Application Specific Discretes
A.S.D.TM
MAIN APPLICATIONS
Where ESD protection for high speed datalines is
required :
LAN / WAN equipment
Computer I/O
Graphic video port
Set top box I/O
SO8
DESCRIPTION
ARRAY of 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltagesby clamping action.
Its very low capacitance allows to protect fast
signals with no distortion. It is particularlysuited for
the protection of graphicvideo ports.
FUNCTIONAL DIAGRAM
FEATURES
ARRAYOF12 DIODESFOR ESDPROTECTION.
PEAK REVERSE VOLTAGE VRRM= 18V PER
DIODE.
I/O 1
REF 1
VERYLOWCAPACITANCE PERDIODE: C <5pF.
VERY LOW LEAKAGECURRENT : IR < 2 µA.
I/O 2
I/O 6
I/O 3
REF 2
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
I/O 4
I/O 5
IEC1000-4-2level 3
8 kV(air discharge)
6 kV(contactdischarge)
January 1998 - Ed: 4
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DALC112S1
TYPICAL APPLICATION
Vcc
DALC112S1
ABSOLUTE MAXIMUM RATINGS
Symbol
(Tamb =25°C).
Parameter
Value
Unit
VRRM
Peak reverse voltage per diode
18
V
Tstg
Tj
Storage temperaturerange
Maximum junctiontemperature
-55 to + 150
150
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
(Tamb =25°C).
Parameter
Typ.
Max.
Unit
VF
IR
Forward voltage
Reverseleakage current per diode
Input capacitance betweenLine and GND
IF = 50 mA
VR = 15 V
1.3
2
V
µ
A
C
Vcc = 5 V, VRMS = 30 mV, F = 1 MHz
7
pF
(see figure 1 below)
Fig 1 :
Input capacitancemeasurement
REF2
CC
+V connected between REF1 and REF2
Input applied :
Vcc = 5V, VRMS= 30 mV, F = 1 MHz
I/O
V
CC
G
REF1
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DALC112S1
ORDER CODE
DALC 1 12 S 1 RL
RL = tape& reel (2500 pcs).
Diode Array
= tube (100 pcs).
Low
Capacitance
Version
SO8 Package
Nb. of Diodes
MARKING
Type
Marking
OrderCode
DALC112S1
Packaging(Base Qty)
DALC112S1 DALC12
tube (100)
tape & reel (2500)
DALC112S1RL
PACKAGE MECHANICAL DATA
REF.
DIMENSIONS
SO8 (Plastic)
Millimetres
Inches
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
b
1.75
0.069
0.010
0.065
0.019
0.010
0.1
0.25 0.004
1.65
0.35
0.19
0.48 0.014
0.25 0.007
b1
C
0.50
0.020
c1
D
45°(typ)
4.8
5.8
5.0 0.189
6.2 0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
0.15
0.157
0.050
0.024
L
1.27 0.016
0.6
M
S
8° (max)
PACKAGING: Preferredpackagingis tape and reel.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all informationpreviously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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