DMV1500 [STMICROELECTRONICS]
DAMPER + MODULATION DIODE FOR VIDEO; 阻尼器+调制二极管视频
| 型号： | DMV1500 |
| 厂家： | 
ST |
| 描述： | DAMPER + MODULATION DIODE FOR VIDEO |
| 文件： | 总9页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
DMV1500M
DAMPER + MODULATION DIODE FOR VIDEO
DAMPER
MODULATION
MAIN PRODUCT CHARACTERISTICS
1
2
3
MODUL
3 A
DAMPER
IF(AV)
VRRM
6 A
600 V
50 ns
1.4 V
1500 V
135ns
1.65 V
trr (max)
VF (max)
3
2
1
Insulated TO-220AB
(Bending option F5 available)
FEATURES AND BENEFITS
■
■
■
■
■
Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for low
dissipation
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
■
Insulated version:
Insulated voltage = 2500 VRMS
Capacitance = 7 pF
■
■
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.
ABSOLUTE RATINGS (limiting values, per diode)
Value
Unit
Symbol
Parameter
Repetitive peak reverse voltage
MODUL DAMPER
VRRM
IFSM
Tstg
Tj
600
35
1500
75
V
A
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
- 40 to + 150
150
°C
Maximum operating junction temperature
July 2001 - Ed: 6A
1/9
DMV1500M
THERMAL RESISTANCES
Symbol
Parameter
Value
4.8
Unit
Rth(j-c)
Rth(j-c)
Damper junction to case
Modulation junction to case
°C/W
6
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES
Value
Symbol
Parameter
Test conditions
Tj = 25°C
Typ. Max.
1.4
Tj = 125°C
Unit
Typ.
Max.
1.65
1000
VF *
Forward voltage drop
IF = 6 A
2.2
1.2
V
IR **
Reverse leakage current VR = 1500V
100
100
µA
Pulse test :
* tp = 380 µs, δ < 2%
**tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
2
P = 1.37 x I
+ 0.047 x I
F (RMS)
F(AV)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
Value
Test
conditions
Symbol
Parameter
Tj = 25°C
Typ. Max.
Tj = 125°C
Unit
Typ.
Max.
1.4
VF *
IR **
Forward voltage drop
IF = 3A
1.8
20
1.1
3
V
Reverse leakage current VR = 600V
50
µA
Pulse test :
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
2
P = 1.12 x I
+ 0.092 x I
F (RMS)
F(AV)
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
Value
Typ. Max.
Symbol
Parameter
Test conditions
Unit
trr
Reverse recovery time
IF = 100mA
IR = 100mA
IRR = 10mA
Tj = 25°C
750
ns
trr
Reverse recovery time
IF = 1A
dIF/dt = -50A/µs
VR = 30V
Tj = 25°C
110
135
ns
2/9
®
DMV1500M
Unit
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
Value
Typ. Max.
110
Symbol
Parameter
Test conditions
trr
Reverse recovery time IF = 100mA
IR = 100mA
Tj = 25°C
350
ns
IRR = 10mA
trr
Reverse recovery time IF = 1A
Tj = 25°C
50
ns
dIF/dt = -50A/µs
VR = 30V
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
Value
Symbol
Parameter
Test conditions
Tj = 100°C
Unit
Typ.
Max.
tfr
Forward recovery time IF = 6A
570
ns
dIF/dt = 80A/µs
VFR = 3V
VFP
Peak forward voltage
IF = 6A
dIF/dt = 80A/µs
Tj = 100°C
21
28
V
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
Value
Symbol
Parameter
Test conditions
Tj = 100°C
Unit
Typ.
Max.
tfr
Forward recovery time IF = 3A
240
ns
dIF/dt = 80A/µs
VFR = 2V
VFP
Peak forward voltage
IF = 3A
dIF/dt = 80A/µs
Tj = 100°C
8
V
3/9
®
DMV1500M
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform, δ = 0.45) (damper
diode).
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform, δ = 0.45) (modula-
tion diode).
PF(av)(W)
PF(av)(W)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Ip(A)
0.2
0.0
Ip(A)
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Fig. 2-1: Average forward current versus ambient
temperature (damper diode).
Fig. 2-2: Average forward current versus ambient
temperature (modulation diode).
IF(av)(A)
IF(av)(A)
8
4.0
7
3.5
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
6
5
4
3
3.0
2.5
2.0
1.5
T
T
2
1.0
1
0.5
Tamb(°C)
Tamb(°C)
tp
=tp/T
δ
tp
=tp/T
δ
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Fig. 3-1: Forward voltage drop versus forward
current (damper diode).
Fig. 3-2: Forward voltage drop versus forward
current (modulation diode).
IFM(A)
IFM(A)
15.0
10.0
9.0
Typical
Tj=125°C
Typical
Tj=125°C
8.0
7.0
6.0
5.0
Maximum
Tj=25°C
10.0
Maximum
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
4.0
3.0
2.0
5.0
1.0
VFM(V)
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
4/9
®
DMV1500M
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
IM(A)
K=[Zth(j-c)/Rth(j-c)]
40
1.0
35
30
25
20
δ = 0.5
0.5
δ = 0.2
δ = 0.1
15
Tc=100°C
0.2
T
10
Single pulse
IM
tp(s)
5
t
t(s)
tp
=tp/T
δ
δ=0.5
0.1
1E-3
0
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
Fig. 6-1: Reverse recovery charges versus dIF/dt
(damper diode).
IM(A)
Qrr(nc)
30
1000
IF= 6A
900
800
90% confidence
Tj=125°C
25
20
15
700
600
500
400
300
200
Tc=100°C
10
IM
5
t
t(s)
δ=0.5
100
0
dIF/dt(A/µs)
0.5 1.0
0
1E-3
1E-2
1E-1
1E+0
0.1
0.2
2.0
5.0
Fig. 7-1: Reverse recovery current versus dIF/dt
(damper diode).
Fig. 6-2: Reverse recovery charges versus dIF/dt
(modulation diode).
IRM(A)
Qrr(nC)
2.0
1.8
1.6
200
IF= 6A
90% confidence
Tj=125°C
IF= 3A
90% confidence
Tj=125°C
150
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0.0
0.1
1.0
10.0
100.0
0.1
0.2
0.5
1.0
2.0
5.0
5/9
®
DMV1500M
Fig. 7-2: Reverse recovery current versus dIF/dt
(modulation diode).
Fig. 8-1: Transient peak forward voltage versus
dIF/dt (damper diode).
IRM(A)
VFP(V)
6
40
IF= 3A
90% confidence
Tj=125°C
IF= 6A
90% confidence
Tj=125°C
35
5
30
4
3
2
1
25
20
15
10
5
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
20
40
60
80
100
120
140
1
10
100
200
Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode).
Fig. 9-1: Forward recovery time versus dIF/dt
(damper diode).
VFP(V)
tfr(ns)
12
11
10
800
IF= 3A
90% confidence
Tj=125°C
IF= 6A
90% confidence
Tj=125°C
VFR=3V
750
9
8
7
6
5
4
3
2
700
650
600
550
500
450
dIF/dt(A/µs)
1
dIF/dt(A/µs)
0
400
0
20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode).
Fig. 10: Dynamic parameters versus junction tem-
perature (damper & modulation diodes).
tfr(ns)
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
200
1.2
IF=IF(av)
90% confidence
Tj=125°C
Vfr=2V
175
1.0
0.8
150
125
100
75
VFP
0.6
IRM
0.4
50
Qrr
0.2
25
dIF/dt(A/µs)
Tj(°C)
0
0.0
0
20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
6/9
®
DMV1500M
Fig. 11: Junction capacitance versus reverse voltage
applied (typical values) (damper & modulation di-
odes).
C(pF)
100
Tj=25°C
F=1MHz
10
VR(V)
1
1
10
100 200
ORDERING INFORMATION
DMV1500M / F5
LEAD BENDING (OPTION)
DAMPER AND MODULATION DIODES FOR VIDEO
7/9
®
DMV1500M
PACKAGE MECHANICAL DATA
TO-220AB F5 OPTION
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
Max.
15.90
26.90
2.41
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
2.95
1.70
1.70
16.80
Max.
0.625
1.059
0.094
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
0.116
0.066
0.066
0.661
A
a1
a3
B
15.20
24.16
1.65
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
2.65
1.14
1.14
15.80
0.598
0.951
0.064
0.393
0.024
0.048
0.173
0.019
0.094
0.094
0.244
0.147
0.104
0.044
0.044
0.622
B
C
b2
L
b1
b2
C
F
Ø
I
A
c1
c2
e
l4
a1
R2
a3
c2
l3
F
R1
l2
I
L
c2
c1
I2
l3
l4
b1
M1
e
16.40 typ.
0.645 typ.
M1
R1
R2
2.92
3.30
0.114
0.129
1.40 typ.
1.40 typ.
0.055 typ.
0.055 typ.
PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT
■
■
■
Cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
3.1mm
1mm
2.2mm
2.54mm
8/9
®
DMV1500M
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
B
C
b2
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
L
a2 13.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
F
I
B
b1
b2
C
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
A
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4 15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
■
■
■
Cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Type
Marking
Package
Weight
Base qty
50
Delivery mode
DMV1500M
DMV1500M
TO-220AB
2.2 g.
Tube
DMV1500MF5
■
Epoxy meets UL94, V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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®
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