ESDALC6V1P5 [STMICROELECTRONICS]

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION; 四路低电容TRANSIL阵列的ESD保护
ESDALC6V1P5
型号: ESDALC6V1P5
厂家: ST    ST
描述:

QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION
四路低电容TRANSIL阵列的ESD保护

瞬态抑制器 二极管 光电二极管 PC 局域网
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中文:  中文翻译
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®
ESDALC6V1P5  
QUAD LOW CAPACITANCE TRANSIL™  
ARRAY FOR ESD PROTECTION  
Application Specific Discretes  
A.S.D.  
MAIN APPLICATIONS  
Where transient overvoltage protection in ESD  
sensitive equipment is required, such as :  
Computers  
Printers  
Communication systems and cellular phones  
Video equipment  
This device is particularly adapted to the protection  
of symmetrical signals.  
SOT665  
(Jedec SC89-5L)  
FEATURES  
4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.  
BREAKDOWN VOLTAGE VBR = 6.1V MIN.  
LOW DIODE CAPACITANCE (12pF @ 0V)  
LOW LEAKAGE CURRENT < 100 nA  
FUNCTIONAL DIAGRAM  
VERY SMALL PCB AREA < 2.6 mm2  
1
2
3
5
4
DESCRIPTION  
The ESDALC6V1P5 is a monolithic array designed  
to protect up to 4 lines against ESD transients.  
This device is ideal for applications where both  
reduced line capacitance and board space saving  
are required.  
BENEFITS  
High ESD protection level.  
High integration.  
Suitable for high density boards.  
ESD response to IEC61000-4-2 level 4 (15kV  
contact)  
COMPLIES WITH THE FOLLOWING STANDARDS :  
IEC61000-4-2 level 4: 15 kV (air discharge)  
8 kV (contact discharge)  
MIL STD 883E-Method 3015-7: class 3  
25kV HBM (Human Body Model)  
February 2004 - Ed: 1  
1/5  
ESDALC6V1P5  
ABSOLUTE RATINGS (Tamb = 25°C)  
Symbol  
Parameter  
Test conditions  
Value  
Unit  
VPP  
ESD discharge - IEC61000-4-2 air discharge  
IEC61000-4-2 contact discharge  
15  
8
kV  
PPP  
Tj  
Peak pulse power (8/20 µs) (see note 1)  
Junction temperature  
Tj initial = Tamb  
30  
125  
W
°C  
°C  
°C  
°C  
Tstg  
TL  
Storage temperature range  
- 55 to + 150  
260  
Maximum lead temperature for soldering during 10s at N/A  
Operating temperature range  
Top  
- 40 to + 125  
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth(j-a)  
Junction to ambient on printed circuit on recommended pad layout  
220  
°C/W  
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)  
Symbol  
VRM  
VBR  
VCL  
IRM  
IPP  
Parameter  
Stand-off voltage  
I
IF  
Breakdown voltage  
Clamping voltage  
VF  
Leakage current  
VCLVBR VRM  
V
IRM  
Peak pulse current  
Voltage tempature coefficient  
Forward voltage drop  
Capacitance per line  
Dynamic resistance  
αT  
VF  
Slope: 1/Rd  
IPP  
C
Rd  
VBR  
@
IR  
IRM  
@
VRM  
Rd  
αT  
C
typ.  
@ 0V  
pF  
min.  
max.  
max.  
typ.  
max.  
Types  
V
V
mA  
1
µA  
V
3
10-4/°C  
4.5  
ESDALC6V1P5  
6.1  
7.2  
0.1  
1.5  
12  
2/5  
ESDALC6V1P5  
Fig. 1: Relative variation of peak pulse power  
versus initial junction temperature.  
Fig. 2: Peak pulse power versus exponential pulse  
duration.  
PPP[Tj initial] / PPP[Tj initial=25°C)  
1.1  
PPP(W)  
1000  
Tj initial=25°C  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
100  
0.1  
Tj(°C)  
Tp(µs)  
10  
0.0  
10  
0
25  
50  
75  
100  
125  
150  
1
100  
Fig. 3: Clamping voltage versus peak pulse  
current (typical values, rectangular waveform).  
Fig. 4: Forward voltage drop versus peak forward  
current (typical values).  
IFM(A)  
IPP(A)  
100.0  
1.E+00  
tp=2.5µs  
Tj initial=25°C  
Tj=125°C  
Tj=25°C  
1.E-01  
10.0  
1.0  
1.E-02  
VCL(V)  
VFM(V)  
1.0  
1.E-03  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.2  
1.4  
1.6  
1.8  
2.0  
0
10  
20  
30  
40  
50  
60  
70  
Fig. 5: Junction capacitance versus reverse  
voltage applied (typical values).  
Fig. 6: Relative variation of leakage current versus  
junction temperature (typical values).  
C(pF)  
13  
IR[Tj] / IR[Tj=25°C]  
1000  
F=1MHz  
VOSC=30mVRMS  
12  
VR=3V  
Tj=25°C  
11  
10  
9
100  
8
7
6
5
10  
4
3
2
1
0
V
(V)  
Tj(°C)  
75  
R
1
25  
50  
100  
125  
0
1
2
3
4
5
6
3/5  
ESDALC6V1P5  
ORDER CODE  
ESDA LC 6V1 P5  
ESD ARRAY  
LOW CAPACITANCE  
PACKAGE: SOT665  
VBR min  
Ordering type  
ESDALC6V1P5  
Marking  
Package  
SOT665  
Weight  
Base qty  
Delivery mode  
Tape & reel  
A1  
2.9 mg.  
3000  
4/5  
ESDALC6V1P5  
PACKAGE MECHANICAL DATA  
SOT-665  
DIMENSIONS  
Millimeters Inches  
Min.  
REF.  
Min.  
Max.  
0.60  
0.27  
0.18  
1.70  
1.30  
Max.  
0.024  
0.011  
0.007  
0.067  
0.051  
bp  
A
bp  
c
0.50  
0.17  
0.08  
1.50  
1.10  
0.020  
0.007  
0.003  
0.060  
0.043  
D
E
A
D
Lp  
U
He  
E
e
1.00  
0.50  
0.040  
0.020  
0.059  
0.004  
e1  
He  
Lp  
1.50  
0.10  
1.70  
0.30  
0.067  
0.012  
e1  
e
FOOT PRINT (in millimeters)  
0.5  
0.3  
REEL ORIENTATION  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
A1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-  
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners.  
© 2004 STMicroelectronics - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany -  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain -  
Sweden - Switzerland - United Kingdom - United States  
www.st.com  
5/5  

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