HCC4011BDT [STMICROELECTRONICS]
Rad-hard quad 2-input NAND gate;
| 型号： | HCC4011BDT |
| 厂家： | 
ST |
| 描述： | Rad-hard quad 2-input NAND gate |
| 文件： | 总12页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCC4011B/12B/23B
HCF4011B/12B/23B
NAND GATES
QUAD 2 INPUT HCC/HCF 4011B
DUAL 4 INPUT HCC/HCF 4012B
TRIPLE 3 INPUT HCC/HCF 4023B
.
PROPAGATION DELAY TIME = 60ns (typ.) AT
CL = 50pF, VDD = 10V
BUFFERED INPUTS AND OUTPUTS
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.
.
EY
F
(Plastic Package)
(Ceramic Frit Seal Package)
.
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
.
.
.
100% TESTED FOR QUIESCENT CURRENT
5V, 10V AND 15V PARAMETRIC RATINGS
MEETS ALLREQUIREMENTS OF JEDECTEN-
TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
M1
C1
(Micro Package)
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
DESCRIPTION
The HCC4011B, HCC4012B and HCC4023B (ex-
tended temperature range) and HCF4011B,
HCF4012B and HCF4023B (intermediate tempera-
ture range) are monolithic, integrated circuit, avail-
able in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
The HCC/HCF4011B, HCC/HCF4012B and
HCC/HCF4023B NAND gates provide the system
designer with direct implementation of the NAND
function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buf-
fered.
PIN CONNECTIONS
4011B
4012B
4023B
June 1989
1/12
HCC/HFC4011B/12B/23B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDD
*
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi
II
Input Voltage
– 0.5 to VDD + 0.5
V
DC Input Current (any one input)
± 10
mA
mW
Pto t
Total Power Dissipation (per package)
Dissipation per Output Transistor
200
for To p = Full Package-temperature Range
100
mW
Top
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
– 40 to + 85
°C
°C
Tstg
Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of thedevice atthese orany other conditions above thoseindicatedin the operationalsections of this specification is notimplied.
Exposure to absolute maximum rating conditions for external periods may affect device reliability.
*
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply Voltage : HCC Types
HCF Types
Value
Unit
VDD
3 to 18
3 to 15
V
V
VI
Input Voltage
0 to VDD
V
Top
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
– 40 to + 85
°C
°C
2/12
HCC/HCF4011B/12B/23B
SCHEMATIC AND LOGIC DIAGRAMS
4011B
4012B
4023B
3/12
HCC/HFC4011B/12B/23B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
Unit
VI
VO
|IO
|
VD D
T Lo w
*
25°C
T High*
(V)
(V)
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
IL
Quiescent
Current
0/5
5
0.25
0.5
1
0.01 0.25
0.01 0.5
7.5
15
0/10
0/15
0/20
0/ 5
0/10
0/15
0/5
10
15
20
5
HCC
Types
0.01
0.02
0.01
0.01
0.01
1
5
1
2
4
30
µA
5
150
7.5
15
1
HCF
Types
10
15
2
4
30
VOH
VOL
VIH
VIL
Output High
Voltage
< 1
< 1
< 1
< 1
< 1
< 1
5
4.95
4.95
9.95
4.95
9.95
V
V
0/10
0/15
5/0
10 9.95
15 14.95
14.95
14.95
Output Low
Voltage
5
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
10/0
15/0
10
15
Input High
Voltage
0.5/4.5 < 1
1/9 < 1
5
10
15
5
3.5
7
3.5
7
3.5
7
V
V
1.5/13.5 < 1
4.5/0.5 < 1
11
11
11
Input Low
Voltage
1.5
3
1.5
3
1.5
3
9/1
< 1
10
15
5
13.5/1.5 < 1
4
4
4
IOH
Output
Drive
Current
0/5
0/5
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
– 2
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
5
– 0.64
HCC
Types
0/10
0/15
0/5
10 – 1.6
15 – 4.2
mA
5
5
– 1.53
– 0.52
0/5
HCF
Types
0/10
0/15
0/5
10 – 1.3
15 – 3.6
IOL
Output
Sink
Current
5
0.64
1.6
0.51
1.3
1
HCC
Types
0/10
0/15
0/5
10
15
5
2.6
6.8
1
0.9
4.2
3.4
2.4
mA
0.52
1.3
0.44
1.1
0.36
HCF
Types
0/10
0/15
10
15
18
2.6
0.9
3.6
3.0
6.8
2.4
I
IH, IIL Input
HCC 0/18
Types
± 0.1
± 0.3
±10–5 ± 0.1
±10–5 ± 0.3
± 1
± 1
Leakage
Current
Any Input
µA
HCF
0/15
15
Types
CI
Input Capacitance
Any Input
5
7.5
pF
* TLOW = – 55°Cfor HCC device : – 40°C for HCF device.
* THIGH = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V withVDD = 15V.
4/12
HCC/HCF4011B/12B/23B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns)
Test Conditions
Value
Symbol
Parameter
Unit
V DD (V) Min. Typ. Max.
t
PLH, tPHL Propagation Delay Time
5
125
60
250
120
90
ns
10
15
5
45
t
THL, tTLH Transition Time
100
50
200
100
80
ns
10
15
40
TEST CIRCUITS
Quiescent Device Current.
Noise Immunity.
Input Leakage Current.
5/12
HCC/HFC4011B/12B/23B
Minimum Output High (source) Current Charac-
teristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Typical Output Low (sink) Current Characteristics.
Typical Propagation Delay Time per Gate as a
Function of Load Capacitance.
Typical Transition Time vs. Load Capacitance.
6/12
HCC/HCF4011B/12B/23B
Typical Voltage Transfer Characteristics.
Typical Power Dissipation/gate vs Frequency.
7/12
HCC/HFC4011B/12B/23B
Plastic DIP14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP.
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
8/12
HCC/HCF4011B/12B/23B
Ceramic DIP14/1 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
20
MIN.
MAX.
0.787
0.276
A
B
7.0
D
E
3.3
0.130
0.600
0.38
0.015
e3
F
15.24
2.29
0.4
2.79
0.55
1.52
0.31
2.54
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.060
0.110
0.022
0.060
0.012
0.100
0.406
0.317
0.200
G
H
L
1.17
0.22
1.52
M
N
P
7.8
0.307
Q
P053C
9/12
HCC/HFC4011B/12B/23B
SO14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
P013G
10/12
HCC/HCF4011B/12B/23B
PLCC20 MECHANICAL DATA
mm
inch
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
TYP.
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
11/12
HCC/HFC4011B/12B/23B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
12/12
相关型号：
©2020 ICPDF网 联系我们和版权申明