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HCF4050M013TR [STMICROELECTRONICS]

HEX BUFFER/CONVERTER (NON INVERTING); HEX BUFFER /转换器（同相）
HCF4050M013TR
型号： HCF4050M013TR
厂家： ST    ST
描述：

HEX BUFFER/CONVERTER (NON INVERTING)
HEX BUFFER /转换器（同相）

转换器
文件： 总8页 (文件大小：132K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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HCF4050B  
HEX BUFFER/CONVERTER (NON INVERTING)  
■
PROPAGATION DELAY TIME :  
= 40ns (TYP.) at V = 10V C = 50pF  
t
PD  
DD  
L
■
■
HIGH TO LOW LEVEL LOGIC CONVERSION  
HIGH "SINK" AND "SOURCE" CURRENT  
CAPABILITY  
■
QUIESCENT CURRENT SPECIFIED UP TO  
20V  
DIP  
SOP  
■
■
5V, 10V AND 15V PARAMETRIC RATINGS  
INPUT LEAKAGE CURRENT  
I = 100nA (MAX) AT V = 18V T = 25°C  
ORDER CODES  
PACKAGE  
I
DD  
A
■
■
100% TESTED FOR QUIESCENT CURRENT  
MEETS ALL REQUIREMENTS OF JEDEC  
JESD13B " STANDARD SPECIFICATIONS  
FOR DESCRIPTION OF B SERIES CMOS  
DEVICES"  
TUBE  
T & R  
DIP  
HCF4050BEY  
HCF4050BM1  
SOP  
HCF4050M013TR  
DESCRIPTION  
The input high level signal (V ) can exceed the  
IH  
V
supply voltage when these devices are used  
The HCF4050B is a monolithic integrated circuit  
fabricated in Metal Oxide Semiconductor  
technology available in DIP and SOP packages.  
It is an non inverting Hex Buffer/Converter and  
feature logic level conversions using only one  
DD  
for logic level conversions. This device is intended  
for use as CMOS to DTL/TTL converters and can  
drive directly two DTL/TTL loads (V =5V,  
DD  
V
≤0.4V and I ≤3.2mA.  
OL  
OL  
supply voltage (V ).  
DD  
PIN CONNECTION  
September 2001  
1/8  
HCF4050B  
INPUT EQUIVALENT CIRCUIT  
PIN DESCRIPTION  
PIN No  
SYMBOL  
NAME AND FUNCTION  
3, 5, 7, 9, 11, A, B, C, D, E,  
Data Inputs  
14  
F
2, 4, 6, 10, G, H, I, J, K,  
Data Outputs  
12, 15  
13 , 16  
8
L
NC  
Not Connected  
V
Negative Supply Voltage  
Positive Supply Voltage  
SS  
V
1
DD  
TRUTH TABLE  
INPUTS  
OUTPUTS  
A, B, C, D,E, F  
G, H, I, J, K, L  
L
L
H
H
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
DC Input Voltage  
DC Input Current  
-0.5 to +22  
V
V
DD  
V
-0.5 to V + 0.5  
I
DD  
I
± 10  
200  
mA  
mW  
mW  
°C  
I
P
Power Dissipation per Package  
Power Dissipation per Output Transistor  
Operating Temperature  
D
100  
T
-55 to +125  
op  
T
Storage Temperature  
-65 to +150  
°C  
stg  
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is  
not implied.  
All voltage values are referred to V pin voltage.  
SS  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
3 to 20  
0 to V  
V
V
DD  
V
Input Voltage  
I
DD  
T
Operating Temperature  
-55 to 125  
°C  
op  
2/8  
HCF4050B  
DC SPECIFICATIONS  
Test Condition  
|I | V  
DD  
Value  
-40 to 85°C -55 to 125°C Unit  
T
= 25°C  
Symbol  
Parameter  
A
V
V
I
O
O
(V)  
(V)  
(µA) (V)  
Min. Typ. Max. Min. Max. Min. Max.  
I
Quiescent Current  
0/5  
0/10  
0/15  
0/20  
0/5  
5
0.02  
0.02  
0.02  
0.04  
1
2
30  
60  
30  
60  
L
10  
15  
20  
µA  
4
120  
600  
120  
600  
20  
V
High Level Output  
Voltage  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
5
4.95  
9.95  
4.95  
9.95  
4.95  
9.95  
OH  
0/10  
0/15  
5/0  
10  
V
V
V
V
15 14.95  
14.95  
14.95  
V
Low Level Output  
Voltage  
5
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
OL  
10/0  
15/0  
10  
15  
V
High Level Input  
Voltage  
0.5/4.5  
1/9  
5
10  
15  
5
3.5  
7
3.5  
7
3.5  
7
IH  
1.5/13.5 <1  
11  
11  
11  
V
Low Level Input  
Voltage  
4.5/0.5  
9/1  
<1  
<1  
1.5  
3
1.5  
3
1.5  
3
IL  
10  
15  
5
13.5/1.5 <1  
4
4
4
I
Output Drive  
Current  
0/5  
0/5  
2.5  
4.6  
9.5  
13.5  
0.4  
0.5  
1.5  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
-1.25 -6.4  
-0.51 -1.6  
-0.42  
-0.38  
-1  
-0.42  
-0.38  
-1  
OH  
5
mA  
mA  
0/10  
0/15  
0/5  
10 -1.25 -3.6  
15 -3.75 -12  
-3  
-3  
I
Output Sink  
Current  
5
3.2  
8
6.4  
16  
48  
2.6  
6.6  
19  
2.6  
6.6  
19  
OL  
0/10  
0/15  
10  
15  
24  
I
Input Leakage  
Current  
I
-5  
0/18  
Any Input  
Any Input  
18  
±0.1  
±1  
±1  
µA  
±10  
C
Input Capacitance  
5
7.5  
pF  
I
The Noise Margin for both "1" and "0" level is: 1V min. with V =5V, 2V min. with V =10V, 2.5V min. with V =15V  
DD  
DD  
DD  
3/8  
HCF4050B  
DYNAMIC ELECTRICAL CHARACTERISTICS (T  
= 25°C, C = 50pF, R = 200KΩ, t = t = 20 ns)  
amb  
L
L
r
f
Test Condition  
Value (*)  
Unit  
Symbol  
Parameter  
V
(V) V (V)  
Min. Typ. Max.  
DD  
I
t
t
Output Transition Time  
5
5
80  
40  
30  
30  
20  
15  
70  
40  
45  
30  
40  
55  
22  
50  
15  
50  
160  
80  
TLH  
THL  
PLH  
10  
15  
5
10  
15  
5
ns  
ns  
60  
Output Transition Time  
Propagation Delay Time  
60  
10  
15  
5
10  
15  
5
40  
30  
t
t
140  
80  
10  
5
10  
10  
15  
15  
5
90  
ns  
ns  
15  
5
60  
80  
Propagation Delay Time  
5
110  
55  
PHL  
10  
5
10  
10  
15  
15  
100  
30  
15  
5
100  
(*) Typical temperature coefficient for all V value is 0.3 %/°C.  
DD  
TEST CIRCUIT  
C
R
R
= 50pF or equivalent (includes jig and probe capacitance)  
L
L
T
= 200KΩ  
= Z  
of pulse generator (typically 50Ω)  
OUT  
4/8  
HCF4050B  
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)  
5/8  
HCF4050B  
Plastic DIP-16 (0.25) MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
0.51  
0.77  
MAX.  
MIN.  
0.020  
0.030  
MAX.  
a1  
B
b
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
17.78  
0.335  
0.100  
0.700  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
0.050  
P001C  
6/8  
HCF4050B  
SO-16 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
TYP  
MAX.  
1.75  
0.2  
MIN.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.003  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45° (typ.)  
9.8  
5.8  
10  
0.385  
0.228  
0.393  
0.244  
E
6.2  
e
1.27  
8.89  
0.050  
0.350  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.024  
G
L
1.27  
0.62  
M
S
8° (max.)  
PO13H  
7/8  
HCF4050B  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2001 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
© http://www.st.com  
8/8  

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