IRF740 [STMICROELECTRONICS]
N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET; N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET
| 型号： | IRF740 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET |
| 文件： | 总8页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF740
N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET
TYPE
IRF740
VDSS
RDS(on)
ID
400 V
< 0.55 Ω
10 A
■
■
■
■
■
TYPICAL RDS(on) = 0.48 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standardparts from various sources.
3
2
1
TO-220
APPLICATIONS
■
■
■
HIGH CURRENT SWITCHING
INTERNAL SCHEMATIC DIAGRAM
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
400
Unit
Drain-source Voltage (VGS = 0)
V
V
VDGR
VGS
400
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
)
Ω
20
V
±
ID
Drain Current (continuous) at Tc = 25 oC
10
A
o
ID
Drain Current (continuous) at Tc = 100 C
6.3
40
A
IDM(• )
Ptot
Drain Current (pulsed)
A
o
Total Dissipation at Tc = 25 C
125
W
Derating Factor
1.0
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
4.0
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD ≤10 A, di/dt ≤120 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
1/8
October 1998
IRF740
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
Typ
1.0
62.5
0.5
oC/W
oC/W
oC/W
oC
Thermal Resistance Junction-ambient
Rthj-amb
Rthc-sink Thermal Resistance Case-sink
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
520
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
400
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
50
µA
Tc = 125 oC
A
µ
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON (
)
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2
3
4
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 5.3 A
Resistance
0.48
0.55
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
10
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 6 A
Min.
Typ.
Max.
Unit
gfs ( )
5.8
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1400
220
27
pF
pF
pF
2/8
IRF740
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
VDD = 200 V ID = 5 A
Min.
Typ.
Max.
Unit
td(on)
tr
17
10
ns
ns
Rise Time
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 320 V ID = 10.7 A VGS = 10V
35
11
12
43
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 320 V ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
10
10
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
VSD ( ) Forward On Voltage
ISD = 10 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
370
3.2
17
ns
ISD =10 A di/dt = 100 A/ s
VDD = 100 V
(see test circuit, figure 5)
µ
Tj = 150 oC
Qrr
C
µ
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
IRF740
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
IRF740
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
IRF740
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 1: Unclamped InductiveWaveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
IRF740
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
A
C
0.181
0.051
0.107
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
IRF740
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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