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元器件品牌
IRF82
[STMICROELECTRONICS]
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS; N沟道增强型功率MOSTRANSISTORS
元器件型号：
IRF82
生产厂家：
STMICROELECTRONICS
描述和应用：
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
N沟道增强型功率MOSTRANSISTORS
PDF文件：
总6页 (文件大小：173K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF82参数
查看货源
IRF820
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
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156
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162
MOTOROLA
IRF820
N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
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156
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1050
STMICROELECTR
IRF820
N-CHANNEL POWER MOSFETS
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156
-
228
SAMSUNG
IRF820
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET
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: Undefined variable $rtag in
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156
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161
INTERSIL
IRF820
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
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156
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237
IRF
IRF820
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
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156
-
189
FAIRCHILD
IRF820
POWER MOSFET
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156
-
47
SUNTAC
IRF820
Power MOSFET
Warning
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on line
156
-
181
VISHAY
IRF820
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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156
-
2
VISHAY
IRF820
2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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156
-
10
ROCHESTER
IRF820_R4943
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
-
1
FAIRCHILD
IRF820-013PBF
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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0
VISHAY
IRF820-019PBF
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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156
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1
VISHAY
IRF820-220
POWER MOSFET
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156
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24
SUNTAC
IRF820-220FP
POWER MOSFET
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156
-
35
SUNTAC
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