ITAXXU1 [STMICROELECTRONICS]

TRANSIL?? ARRAY FOR DATALINE PROTECTION; TRANSIL ?数组,数据线保护
ITAXXU1
型号: ITAXXU1
厂家: ST    ST
描述:

TRANSIL?? ARRAY FOR DATALINE PROTECTION
TRANSIL ?数组,数据线保护

文件: 总6页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ITAxxU1  
®
TRANSIL™ ARRAY  
FOR DATALINE PROTECTION  
ASD™  
MAIN APPLICATIONS  
Data transmission lines protection, such as :  
Unipolar signal up to 5.5 V  
Bipolar signal in the 2.5 V range  
FEATURES  
High surge capability Transil array:  
IPP = 40 A (8/20µs)  
SO-8  
Peak pulse power : 300 W (8/20µs)  
Up to 6 bidirectional Transil functions  
Low clamping factor (VCL / VBR) at high current  
level  
Low leakage current  
ESD protection up to 15kV  
Table 1: Order Codes  
Part Number  
ITA6V1U1  
Marking  
6V1U1  
6V1U1  
ITA6V1U1RL  
DESCRIPTION  
Transil diode arrays provide high overvoltage pro-  
tection by clamping action. Their instantaneous re-  
sponse to transient overvoltages makes them  
particularly suited to protect voltage sensitive de-  
vices such as MOS Technology and low voltage  
supplied IC’s.  
Figure 1: Functional Diagram  
The ITA series allies high surge capability against  
energetic pulses with high voltage performance  
against ESD.  
I/O1 1  
I/O2 2  
I/O3 3  
I/O4 4  
8 I/O6  
7 GND  
6 GND  
COMPLIES WITH THE FOLLOWING STANDARDS:  
5
I/O5  
IEC61000-4-2 level 4:  
15kV (air discharge)  
8kV (contact discharge)  
MIL STD 883E-Method 3015-7: class3  
25kV HBM (Human Body Model)  
TM: ASD and TRANSIL are trademarks of STMicroelectronics.  
December 2004  
REV. 1  
1/6  
ITAxxU1  
Table 2: Absolute Ratings (Tamb = 25°C)  
Symbol  
Parameter  
Value  
300  
Unit  
W
PPP  
Tj initial = Tamb  
Tj initial = Tamb  
Peak pulse power (8/20µs) (see note 1)  
Peak pulse current (8/20µs) (see note 1)  
IPP  
40  
A
I2t  
Tj  
Wire I2t value (see note 1)  
A2s  
°C  
0.6  
Maximum operating junction temperature  
Storage temperature range  
125  
Tstg  
TL  
-55 to +150  
260  
°C  
Maximum lead temperature for soldering during 10 s at 5mm for case  
°C  
Note 1: For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by  
the wire melting.  
Table 3: Electrical Characteristics (Tamb = 25°C)  
Symbol  
Parameter  
Stand-off voltage  
I
IF  
VRM  
VBR  
VCL  
IRM  
IPP  
Breakdown voltage  
Clamping voltage  
VBR  
VF  
VRM  
VCL  
V
Leakage current  
IRM  
Peak pulse current  
Voltage temperature coefficient  
Forward voltage drop  
Capacitance  
αT  
VF  
IPP  
C
VBR @ IR IRM @ VRM VCL  
@
IPP VCL  
@
IPP  
VF @ IF  
αT  
C
min.  
max.  
max. 8/20µs max. 8/20µs max.  
max. max.  
Part  
Number  
note 2  
note 2  
note 2  
note 3  
10-4/°C  
V
mA  
1
µA  
10  
V
5
V
A
V
A
pF  
V
A
1
ITA6V1U1 6.51  
10  
10  
12  
25  
4
1500  
1.3  
Note 2: Between I/O pin and ground.  
Note 3: Between two input pins at 0V Bias, F = 1 MHz.  
2/6  
ITAxxU1  
Figure 2: Pulse waveform  
%IPP  
Figure 3: Typical peak pulse power versus  
exponential pulse duration  
P
(W)  
PP  
1000  
100  
10  
Tj initial=25°C  
8µs  
100  
Pulse waveform 8/20µs  
50  
0
t
t (ms) expo  
P
20µs  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
Figure 4: Clamping voltage versus peak pulse  
current (exponential waveform 8/20µs)  
Figure 5: Peak current IDC inducing open  
circuit of the wire for one input/output versus  
pulse duration (typical values)  
V
(V)  
I
(A)  
CL  
DC  
1E+03  
1E+03  
1E+02  
%IPP  
100  
Tj initial=25°C  
Exponential waveform  
50  
0
t
tr  
tp  
1E+02  
1E+01  
1E+00  
1E+01  
1E+00  
I
PP  
(A)  
t (ms)  
P
1E-01  
1E+00  
1E+01  
1E+02  
1E-02  
1E-01  
1E+00  
1E+01  
Figure 6: Junction capacitance versus reverse  
applied voltage for one input/output (typical  
values)  
Figure 7: Relative variation of leakage current  
versus junction temperature  
C(pF)  
I (T )  
R
j
1500  
I (T =25°C)  
R
j
Tj=25°C  
F=1MHz  
5E+3  
1E+3  
VR=VRM  
1250  
1000  
750  
1E+2  
1E+1  
1E+0  
1E-1  
T (°C)  
j
V (V)  
R
500  
0
25  
50  
75  
100  
125  
150  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
3/6  
ITAxxU1  
APPLICATION INFORMATION  
Figure 8: µP I/O lines  
+5V  
I/O  
I/O  
I/O  
I/O  
I/O  
µP  
interface  
I/O  
GND  
Figure 9: 2.5V datalines  
I/O  
I/O  
I/O  
Line  
driver  
I/O  
GND  
+2.5V -2.5V  
Figure 10: Ordering Information Scheme  
Integrated Transil Array  
ITA 6V1 U 1 RL  
Breakdown Voltage (min)  
25 = 25 Volt  
Type of lines protected  
U = Unidirectional  
Package  
1 = SO-8  
Packaging  
RL = Tape & reel  
Blank = Tube  
4/6  
ITAxxU1  
Figure 11: SO-8 Package Mechanical Data  
DIMENSIONS  
Millimetres Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
h x 45°  
A
a1  
a2  
1.75  
0.25 0.004  
1.65  
0.85 0.025  
0.48 0.014  
0.25 0.007  
0.069  
0.010  
0.065  
0.033  
0.019  
0.010  
0.020  
C
ddd C  
(Seating  
Plane)  
0.25mm  
(Gage Plane)  
0.1  
A2  
A
A1  
e
B
k
a3 0.65  
0.35  
b1 0.19  
L
b
D
C
c1  
D
E
0.25 0.50 0.50 0.010  
45° (typ)  
8
1
5
4
4.8  
5.8  
5.0 0.189  
6.2 0.228  
0.197  
0.244  
E
H
e
e3  
F
L
M
S
1.27  
3.81  
0.050  
0.150  
3.8  
0.4  
4.0 0.15  
1.27 0.016  
0.6  
0.157  
0.050  
0.024  
8° (max)  
Figure 12: Foot Print Dimensions (in millimeters)  
6.8  
0.6  
4.2  
1.27  
Table 4: Ordering Information  
Part Number  
ITA6V1U1  
Marking  
6V1U1  
6V1U1  
Package  
Weight  
Base qty  
Delivery mode  
Tube  
2000  
2500  
SO-8  
0.08 g  
ITA6V1U1RL  
Tape & reel  
Table 5: Revision History  
Date  
Revision  
Description of Changes  
13-Dec-2004  
1
First issue  
5/6  
ITAxxU1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
6/6  

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