K10N07FM [STMICROELECTRONICS]
OMNIFET FULLY AUTOPROTECTED POWER MOSFET; OMNIFET岗AUTOPROTECTED功率MOSFET
| 型号： | K10N07FM |
| 厂家： | 
ST |
| 描述： | OMNIFET FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总14页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
®
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
Vclamp
RDS(on)
Ilim
VNB10N07
70 V
70 V
70 V
70 V
0.1 Ω
0.1 Ω
0.1 Ω
0.1 Ω
10 A
10 A
10 A
10 A
VNK10N07FM
VNP10N07FI
VNV10N07
3
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
1
D2PAK
TO-263
SOT82-FM
■
■
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
10
■
3
2
1
1
ISOWATT220
PowerSO-10
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using
STMicroelectronics
VIPower
M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
BLOCK DIAGRAM ( )
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
1/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
PowerSO-10
D2PAK
SOT-82FM ISOWATT220
VDS
Vin
ID
Drain-source Voltage (Vin = 0)
Input Voltage
Internally Clamped
V
V
A
A
V
18
Internally Limited
-14
Drain Current
IR
Reverse DC Output Current
Vesd
Electrostatic Discharge (C= 100 pF,
2000
R=1.5 KΩ)
o
Ptot
Tj
Total Dissipation at Tc = 25 C
50
9.5
31
W
oC
oC
oC
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally Limited
Internally Limited
-55 to 150
Tc
Tstg
THERMAL DATA
ISOWATT220 PowerSO-10
SOT82-FM
D2PAK
2.5
Rthj-case Thermal Resistance
Junction-case
Max
Max
4
2.5
50
13
oC/W
oC/W
Rthj-amb Thermal Resistance
Junction-ambient
62.5
100
62.5
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
ID = 200 mA Vin = 0
Min.
Typ.
Max.
Unit
VCLAMP Drain-source Clamp
Voltage
60
70
80
V
VCLTH
VINCL
IDSS
Drain-source Clamp
Threshold Voltage
ID = 2 mA Vin = 0
Iin = -1 mA
55
-1
V
V
Input-Source Reverse
Clamp Voltage
-0.3
Zero Input Voltage
Drain Current (Vin = 0) VDS = 25 V Vin = 0
VDS = 13 V Vin = 0
50
200
µA
µA
IISS
Supply Current from
Input Pin
VDS = 0 V Vin = 10 V
250
500
µA
ON ( )
Symbol
Parameter
Test Conditions
VDS = Vin ID + Iin = 1 mA
Min.
Typ.
Max.
Unit
VIN(th)
Input Threshold
Voltage
0.8
3
V
RDS(on)
Static Drain-source On Vin = 10 V ID = 5 A
Resistance in = 5 V ID = 5 A
0.1
0.14
Ω
Ω
V
2/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS = 13 V
ID = 5 A
6
8
S
Transconductance
Coss
Output Capacitance
VDS = 13 V f = 1 MHz Vin = 0
350
500
pF
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
V
DD = 15 V
gen = 10 V
Id = 5 A
Rgen = 10 Ω
50
80
230
100
100
160
400
180
ns
ns
ns
ns
(see figure 3)
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
V
DD = 15 V
gen = 10 V
Id = 5 A
Rgen = 1000 Ω
600
0.9
3.8
1.7
900
2
6
ns
µs
µs
µs
(see figure 3)
2.5
(di/dt)on Turn-on Current Slope VDD = 15 V
Vin = 10 V
ID = 5 A
Rgen = 10 Ω
60
A/µs
Qi
Total Input Charge
VDD = 12 V ID = 5 A Vin = 10 V
30
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
VSD ( ) Forward On Voltage
ISD = 5 A Vin = 0
1.6
trr
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD = 5 A
di/dt = 100 A/µs
Tj = 25 C
125
0.3
4.8
ns
o
VDD = 30 V
(see test circuit, figure 5)
Qrr
(
)
µC
IRRM
(
)
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ilim
Drain Current Limit
Vin = 10 V VDS = 13 V
7
7
10
10
14
14
A
A
Vin = 5 V
VDS = 13 V
tdlim
(
(
)
)
Step Response
Current Limit
Vin = 10 V
Vin = 5 V
20
50
30
80
µs
µs
oC
Tjsh
Overtemperature
Shutdown
150
135
Tjrs
Igf
(
)
Overtemperature Reset
Fault Sink Current
oC
(
)
Vin = 10 V VDS = 13 V
Vin = 5 V
50
20
mA
mA
VDS = 13 V
o
Eas
(
)
Single Pulse
starting Tj = 25 C
VDD = 20 V
0.4
J
Avalanche Energy
Vin = 10 V Rgen = 1 KΩ L = 10 mH
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
) Parameters guaranteed by design/characterization
(
3/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
PROTECTION FEATURES
During normal operation, the Input pin is
- OVERTEMPERATURE AND SHORT CIRCUIT
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
The device integrates:
- OVERVOLTAGE
CLAMP
PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition,
a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold Tjsh.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in RDS(on)).
4/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Thermal Impedance For ISOWATT220
Thermal Impedance For D2PAK / PowerSO-10
Derating Curve
Output Characteristics
Transconductance
Static Drain-Source On Resistance vs Input
Voltage
5/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
7/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Forward Characteristics
8/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Input Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 6: Waveforms
And Diode Recovery Times
9/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
TO-263 (D2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.055
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.4
B2
C
1.25
0.45
1.21
8.95
10
0.6
C2
D
1.36
9.35
10.28
5.28
15.85
1.4
E
G
4.88
15
L
L2
L3
1.27
1.4
1.75
E
A
C2
L2
D
L
L3
A1
B2
B
C
G
P011P6/C
10/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
SOT82-FM MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.85
1.47
0.40
1.4
TYP.
MAX.
3.05
1.67
0.60
1.6
MIN.
1.122
0.578
0.157
0.551
0.511
0.177
4.133
0.866
2.933
6.102
0.767
MAX.
1.200
0.657
0.236
0.630
0.590
0.236
4.291
1.102
3.051
6.260
0.925
A
A1
b
b1
b2
c
1.3
1.5
0.45
10.5
2.2
0.6
D
10.9
2.8
e
E
7.45
15.5
1.95
7.75
15.9
2.35
L
L1
P032R
11/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ISOWATT220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.4
F
0.75
1.15
1.15
4.95
2.4
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
P011G
12/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
PowerSO-10 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
9.30
7.20
7.20
6.10
5.90
TYP.
MAX.
3.65
0.10
0.60
0.55
9.60
7.60
9.50
7.40
7.60
6.35
6.10
MIN.
0.132
0.000
0.016
0.013
0.370
0.291
0.366
0.283
0.283
0.240
0.232
MAX.
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
0.300
0.250
0.240
A
A1
B
c
D
D1
E
E1
E2
E3
E4
e
1.27
0.050
F
1.25
1.35
0.049
0.543
0.053
0.567
H
13.80
14.40
h
0.50
1.70
0.002
0.067
L
1.20
0o
1.80
8o
0.047
0.071
q
α
B
0.10
A
B
10
6
H
E
E3 E1
E2
E4
1
5
SEATING
PLANE
DETAIL "A"
e
B
A
C
M
0.25
Q
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL "A"
α
0068039-C
13/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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