LM833D [STMICROELECTRONICS]
Low Noise Dual Operational Amplifier; 低噪声双运算放大器
| 型号： | LM833D |
| 厂家： | 
ST |
| 描述： | Low Noise Dual Operational Amplifier |
| 文件： | 总9页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM833
Low Noise Dual Operational Amplifier
■ Low voltage noise: 4.5nV/√Hz
■ High gain bandwidth product: 15MHz
■ High slew rate: 7V/µs
■ Low distortion: 0.002%
N
DIP8
(Plastic Package)
■ Excellent frequency stability
■ ESD protection 2kV
Description
The LM833 is a monolithic dual operational
amplifier particularly well suited for audio
applications.
D
SO8
It offers low voltage noise (4.5nV/√Hz) and high
frequency performances (15MHz Gain Bandwidth
product, 7V/µs slew rate).
(Plastic Micropackage)
In addition the LM833 has also a very low
distortion (0.002%) and excellent phase/gain
margins.
Pin Connections (top view)
+
V
1
2
3
4
8
7
6
5
Output 1
Inverting input 1
CC
Output 2
-
+
Non-inverting input 1
-
Inverting input 2
+
-
Non-inverting input 2
V
CC
Order Codes
Temperature
Part Number
Package
Packaging
Marking
Range
LM833N
DIP8
S8-8
Tube
LM833N
833
-40, +105°C
-40, +125°C
LM833D/DT
Tube or Tape & Reel
LM833YD/YDT
SO-8 (automotive grade level) Tube or Tape & Reel
833Y
Rev 2
July 2005
1/9
www.st.com
9
Absolute Maximum Ratings
LM833
1
Absolute Maximum Ratings
Table 1.
Symbol
Key parameters and their absolute maximum ratings
Parameter Value
Unit
V
V
Supply Voltage
18 or +36
30
CC
(1)
V
V
Differential Input Voltage - note
Input Voltage - see note 1
id
V
15
Infinite
V
s
i
Output Short Circuit Duration
T
Operating Free-Air Temperature Range
Junction Temperature
-40 to 105
+150
°C
°C
°C
mW
oper
T
j
T
Storage Temperature
-65 to +150
500
stg
(2)
Ptot
Maximum Power Dissipation - note
(3)
2
kV
V
HBM: Human Body Model
(4)
ESD
200
1500
MM: Machine Model
CDM: Charged Device Model
V
1. Either or both input voltages must not exceed the magnitude of Vcc+ or Vcc-.
2. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
3. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
Table 2.
Symbol
Operating conditions
Parameter
Value
Unit
V
Supply Voltage
2.5 to 15
V
CC
2/9
LM833
Typical Application Schematics
2
Typical Application Schematics
Figure 1. Schematic diagram (1/2 LM833)
VCC
Output
Non-inverting
Inverting
Input
Input
VCC
3/9
Electrical Characteristics
LM833
3
Electrical Characteristics
+
-
Table 3.
Symbol
V
= +15V, V
= -15V, T
= 25°C (unless otherwise specified)
Min. Typ. Max.
CC
CC
amb
Parameter
Unit
V
Input Offset Voltage (R = 10Ω, V = 0V, V = 0V)
0.3
5
mV
io
s
o
ic
Input Offset Voltage Drift
DV
µV/°C
io
R = 10Ω, V = 0V, T . ≤ T
≤ T
max.
2
s
o
min
amb
I
Input Offset Current (V = 0V, V = 0V)
o ic
25
200
nA
nA
V
io
I
Input Bias Current (V = 0V, V = 0V)
o ic
300 1000
ib
V
Input Common Mode Voltage Range
12
90
14
icm
A
Large Signal Voltage Gain (R = 2kΩ, V = 10V)
100
dB
vd
L
o
Output Voltage Swing (V
= 1V)
id
R = 2.0kΩ
L
10
12
13.7
-14
13.9
-14.4 -12
V
R = 2.0kΩ
-10
V
opp
L
R = 10kΩ
L
R = 10kΩ
L
Common-mode Rejection Ratio (V
=
13V)
CMR
SVR
80
80
100
dB
dB
ic
Supply Voltage Rejection Ratio
105
+
-
(V
/ V
= +15V / -15V to +5V / -5V)
CC
CC
I
Supply Current (V = 0V, All amplifiers)
4
7
8
mA
V/µs
CC
o
Slew Rate (V = -10V to +10V, R = 2kΩ, A = +1)
SR
GBP
B
5
i
L
V
Gain Bandwidth Product (R = 2kΩ, C = 100pF, f = 100kHz)
10
15
9
MHz
L
L
Unity Gain Bandwidth (Open loop)
MHz
Phase Margin (R = 2kΩ)
φm
60
Degrees
L
nV
-----------
e
Equivalent Input Noise Voltage (R = 100Ω, f = 1kHz)
4.5
0.5
n
S
Hz
pA
-----------
i
Equivalent Input Noise Current (f = 1kHz)
n
Hz
Total Harmonic Distortion
THD
0.002
%
(R = 2kΩ, f = 20Hz to 20kHz, V = 3V , A = +1)
L
o
rms
V
V
/V
Channel Separation (f = 20Hz to 20kHz)
Full Power Bandwidth (V = 27V , R = 2kΩ, THD ≤ 1%)
120
120
dB
O1 O2
FPB
kHz
o
pp
L
4/9
LM833
Electrical Characteristics
Figure 2. Total supply current vs. supply
voltage
Figure 3. Output voltage vs. supply voltage
5
4.5
4
15
10
5
3.5
3
2.5
2
Vid
= 1V
R
L = 600Ω
0
-5
1.5
1
-10
-15
0.5
0
0
5
10
15
20
25
30
0
5
10
15
Supply Voltage (V)
Supply Voltage (V)
Figure 4. Equivalent input noise voltage vs.
frequency
Figure 5. Output short circuit current vs.
output voltage
50
40
30
VCC
= 15V, G = 100
R
s = 100, Tamb = 25°C
20
VCC = 0/30V
Tamb = 25°C
10
0
-10
-20
-30
-40
0
10
20
30
Output Voltage (V)
Figure 6. Output voltage vs. supply voltage
Figure 7. THD+ noise vs. frequency
15
10
5
1
0.1
RL = 2kΩ, Vo = 3Vrms
Vid
=
1V
VCC
=
15V, Av = 1
0
-5
R
L = 2kΩ
0.01
-10
-15
0.001
0.01
0.1
1
10
100
Frequency (kHz)
0
5
10
15
Supply Voltage (V)
5/9
Electrical Characteristics
LM833
Figure 8. Voltage gain and phase vs.
frequency
Figure 9. THD + noise vs. Vout
50
180
120
60
1.000
40
phase
30
R
= 2kΩ, f = 1kHz
gain
L
0.100
0.010
0.001
V
= 15V, A = 10
v
20
CC
10
0
0
-10
R
V
= 2kΩ, C = 100pF
L
CC
-60
-120
L
=
15V, G = -100
-20
-30
1
2
3
4
5
6
7
8
9
10
10
100
1000
10000
100000
Vout (Vrms)
Frequency (kHz)
6/9
LM833
Package Mechanical Data
4
Package Mechanical Data
®
In order to meet environmental requirements, ST offers these devices in ECOPACK packages.
These packages have a Lead-free second level interconnect. The category of second level
interconnect is marked on the package and on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com.
4.1
DIP-8 Package
Plastic DIP-8 MECHANICAL DATA
mm.
TYP
3.3
inch
TYP.
0.130
DIM.
MIN.
MAX.
MIN.
MAX.
A
a1
B
0.7
1.39
0.91
0.028
0.055
0.036
1.65
1.04
0.065
0.041
B1
b
0.5
0.020
b1
D
E
0.38
0.5
9.8
0.015
0.020
0.386
8.8
0.346
0.100
0.300
0.300
e
2.54
7.62
7.62
e3
e4
F
7.1
4.8
0.280
0.189
I
L
3.3
0.130
Z
0.44
1.6
0.017
0.063
P001F
7/9
Package Mechanical Data
LM833
4.2
SO-8 Package
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
A1
A2
B
1.35
1.75
0.053
0.069
0.10
1.10
0.33
0.19
4.80
3.80
0.25
1.65
0.51
0.25
5.00
4.00
0.04
0.010
0.065
0.020
0.010
0.197
0.157
0.043
0.013
0.007
0.189
0.150
C
D
E
e
1.27
0.050
H
5.80
0.25
0.40
6.20
0.50
1.27
0.228
0.010
0.016
0.244
0.020
0.050
h
L
k
˚ (max.)
8
ddd
0.1
0.04
0016023/C
8/9
LM833
Revision History
5
Revision History
Date
Revision
Changes
Nov. 2001
1
Initial release.
1 - PPAP references inserted in the datasheet seeTable on page 1.
2 - ESD protection inserted in Table 1 on page 2
July 2005
2
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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9/9
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