M2716 [STMICROELECTRONICS]
NMOS 16K 2K x 8 UV EPROM; NMOS 16K 2K ×8 UV EPROM
| 型号： | M2716 |
| 厂家： | 
ST |
| 描述： | NMOS 16K 2K x 8 UV EPROM |
| 文件： | 总9页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION
525mW Max ACTIVE POWER, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
24
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTPUTS TTL COMPATIBLE
DURING BOTH READ and PROGRAM
MODES
1
FDIP24W (F)
THREE-STATE OUTPUT with TIED-OR-
CAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
Figure 1. Logic Diagram
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and elec-
trically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important require-
ments.
V
V
PP
CC
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose thechip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
11
8
A0-A10
Q0-Q7
EP
G
M2716
Table 1. Signal Names
A0 - A10
Q0 - Q7
EP
Address Inputs
Data Outputs
Chip Enable / Program
Output Enable
Program Supply
Supply Voltage
Ground
V
SS
AI00784B
G
VPP
VCC
VSS
July 1994
1/9
M2716
Table 2. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
grade 1
grade 6
0 to 70
–40 to 85
°C
TBIAS
Temperature Under Bias
grade 1
grade 6
–10 to 80
–50 to 95
°C
TSTG
VCC
VIO
Storage Temperature
Supply Voltage
–65 to 125
–0.3 to 6
–0.3 to 6
–0.3 to 26.5
1.5
°C
V
Input or Output Voltages
Program Supply
V
VPP
PD
V
Power Dissipation
W
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause
permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods
may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
Deselect Mode. The M2716 is deselected by mak-
ing G = VIH. This mode is independent of EP and
the condition of the addresses. The outputs are
Hi-Z when G = VIH. This allowstied-ORof 2 or more
M2716’s for memory expansion.
Figure 2. DIP Pin Connections
A7
A6
A5
A4
A3
A2
A1
A0
Q0
1
2
3
4
5
6
7
8
9
24
V
CC
Standby Mode (Power Down). The M2716 may
be powered down to the standby mode by making
EP = VIH. This is independent of G and automat-
ically puts the outputs in the Hi-Z state. The power
is reduced to 25% (132 mW max) of the normal
operating power. VCC and VPP must be maintained
at 5V. Access timeat powerup remains either tAVQV
or tELQV (see Switching Time Waveforms).
23 A8
22 A9
21
20
V
PP
G
19 A10
18 EP
17 Q7
16 Q6
15 Q5
14 Q4
13 Q3
M2716
Programming
The M2716 is shipped from SGS-THOMSON com-
pletely erased. All bits will be at “1" level (output
high) in this initial state and after any full erasure.
Table 3 shows the 3 programming modes.
Q1 10
Q2 11
V
12
SS
AI00785
Program Mode. The M2716 is programmed by
introducing “0"s into the desired locations. This is
done8bits(abyte) atatime.Anyindividualaddress,
sequential addresses, or addresses chosen at ran-
dom may be programmed. Any or all of the 8 bits
associated with an address location may be pro-
grammed with a single program pulse applied to the
EP pin.Allinputvoltagelevelsincludingtheprogram
pulse on chip enable are TTL compatible.
DEVICE OPERATION
The M2716 has 3 modes of operation in the normal
system environment. These are shown in Table 3.
Theprogrammingsequenceis: withVPP = 25V, VCC
= 5V, G = VIH and EP = VIL, an address is selected
and the desired data word is applied to the output
pins (VIL = “0" and VIH = ”1" for both address and
data). After the address and data signals are stable
the program pin is pulsed from VIL to VIH with a
Read Mode. The M2716 read operation requires
that G = VIL, EP = VIL and that addresses A0-A10
have been stabilized. Valid data will appear on the
output pins after time tAVQV, tGLQV or tELQV (see
Switching Time Waveforms) depending on which is
limiting.
2/9
M2716
DEVICE OPERATION (cont’d)
ERASURE OPERATION
The M2716 is erased by exposure to high intensity
ultraviolet light through the transparent window.
This exposure discharges the floating gate to its
initial state through induced photo current. It is
recommended that the M2716 be kept out of direct
sunlight. The UV content of sunlight may cause
a partial erasure of some bits in a relatively short
period of time.
pulse width between 45ms and 55ms. Multiple
pulses are not needed but will not cause device
damage. No pins should be left open. A high level
(VIH or higher) must not be maintained longer than
tPHPL (max) on the program pin during program-
ming. M2716’s may be programmed in parallel in
this mode.
Program Verify Mode. The programming of the
M2716 may be verified either one byte at a time
during the programming (as shown in Figure 6) or
by reading all of the bytes out at the end of the
programming sequence. This can be done with
VPP = 25V or 5V in either case. VPP must be at 5V
for all operating modes and can be maintained at
25V for all programming modes.
An ultraviolet source of 2537 Å yielding a total
integrated dosage of 15 watt-seconds/cm2 power
rating is used. The M2716 to be erased should be
placed 1 inch away from the lamp and no filters
should be used.
An erasure system should be calibrated peri-
odically. The erasure time is increased by the
square of the distance (if the distance is doubled
the erasure time goes up by a factor of 4). Lamps
lose intensity as they age, it is therefore important
to periodically check that the UV system is in good
order.
Program Inhibit Mode. The program inhibit mode
allows several M2716’s to be programmed simul-
taneously with different data for each one by con-
trolling which ones receive the program pulse. All
similar inputs of the M2716 may be paralleled.
Pulsing the program pin (from VIL to VIH) will pro-
gram a unit while inhibiting the program pulse to a
unit will keep it from being programmed and keep-
ing G = VIH will put its outputs in the Hi-Z state.
This will ensure that the EPROMs are being com-
pletely erased. Incomplete erasure will cause
symptoms that can be misleading. Programmers,
components, and system designs have been erro-
neously suspected when incomplete erasure was
the basic problem.
Table 3. Operating Modes
Mode
EP
VIL
G
VPP
VCC
Q0 - Q7
Data Out
Data In
Data Out
Hi-Z
Read
VIL
VIH
VIL
VIH
VIH
X
Program
Verify
VIH Pulse
VIL
VPP
VPP or VCC
VPP
Program Inhibit
Deselect
VIL
X
VCC
Hi-Z
Standby
VIH
VCC
Hi-Z
Note: X = VIH or VIL.
3/9
M2716
Figure 4. AC Testing Load Circuit
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times
≤ 20ns
1.3V
Input Pulse Voltages
0.45V to 2.4V
0.8V to 2.0V
Input and Output Timing Ref. Voltages
1N914
Note that Output Hi-Z is defined as the point where data
is no longer driven.
3.3kΩ
Figure 3. AC Testing Input Output Waveforms
DEVICE
UNDER
TEST
OUT
C
= 100pF
2.4V
L
2.0V
0.8V
0.45V
C
includes JIG capacitance
L
AI00828
AI00827
Table 4. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
CIN
Parameter
Input Capacitance
Output Capacitance
Test Condition
VIN = 0V
Min
Max
Unit
pF
6
COUT
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
Table 5. Read Mode DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC
)
Symbol
ILI
Parameter
Input Leakage Current
Output Leakage Current
Supply Current
Test Condition
0 ≤ VIN ≤ VCC
Min
Max
±10
±10
100
25
Unit
µA
µA
mA
mA
mA
V
ILO
VOUT = VCC, EP = VCC
EP = VIL, G = VIL
EP = VIH, G = VIL
VPP = VCC
ICC
ICC1
IPP
Supply Current (Standby)
Program Current
5
VIL
Input Low Voltage
–0.1
2
0.8
VIH
Input High Voltage
Output Low Voltage
Output High Voltage
VCC + 1
0.45
V
VOL
VOH
IOL = 2.1mA
V
IOH = –400µA
2.4
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
.
4/9
M2716
Table 6. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC
)
M2716
Symbol
Alt
Parameter
Test Condition
Unit
-1
blank
Min
Max
Min
Max
tAVQV
tELQV
tGLQV
tACC Address Valid to Output Valid
tCE Chip Enable Low to Output Valid
tOE Output Enable Low to Output Valid
tOD Chip Enable High to Output Hi-Z
tDF Output Enable High to Output Hi-Z
EP = VIL, G = VIL
G = VIL
350
350
120
100
100
450
450
120
100
100
ns
ns
ns
ns
ns
ns
EP = VIL
(2)
tEHQZ
G = VIL
0
0
0
0
0
0
(2)
tGHQZ
EP = VIL
tAXQX
tOH Address Transition to Output Transition EP = VIL, G = VIL
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
.
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
VALID
A0-A10
tAVQV
tAXQX
EP
tEHQZ
tGHQZ
tGLQV
G
tELQV
Hi-Z
Q0-Q7
DATA OUT
AI00786
Table 7. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 25V ± 1V)
Symbol
ILI
Parameter
Input Leakage Current
Supply Current
Test Condition
IL ≤ VIN ≤ VIH
Min
Max
Unit
V
±10
100
5
µA
mA
mA
mA
V
ICC
IPP
Program Current
IPP1
VIL
Program Current Pulse
Input Low Voltage
Input High Voltage
EP = VIH Pulse
30
–0.1
2
0.8
VIH
VCC + 1
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
.
5/9
M2716
Table 8. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 25V ± 1V)
Symbol
tAVPH
Alt
tAS
tDS
tOS
Parameter
Test Condition
G = VIH
Min
2
Max
Units
µs
Address Valid to Program High
Input Valid to Program High
tQVPH
G = VIH
2
µs
tGHPH
Output Enable High to Program
High
2
µs
tPL1PL2
tPH1PH2
tPHPL
tPR
tPF
Program Pulse Rise Time
Program Pulse Fall Time
Program Pulse Width
5
5
ns
ns
tPW
tDH
tOH
45
2
55
ms
µs
tPLQX
Program Low to Input Transition
tPLGX
Program Low to Output Enable
Transition
2
µs
tGLQV
tGHQZ
tPLAX
tOE
tDF
tAH
Output Enable to Output Valid
EP = VIL
120
100
ns
ns
µs
Output Enable High to Output Hi-Z
Program Low to Address Transition
0
2
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
.
2. Sampled only, not 100% tested.
Figure 6. Programming and Verify Modes AC Waveforms
A0-A10
Q0-Q7
VALID
tAVPH
tQVPH
tPLAX
DATA IN
DATA OUT
tPLQX
tPLGX
G
tGHPH
tGLQV
tGHQZ
EP
tPHPL
PROGRAM
VERIFY
AI00787
6/9
M2716
ORDERING INFORMATION SCHEME
Example:
M2716
-1
F
1
Speed and VCC Tolerance
Package
FDIP24W
Temperature Range
-1
blank
350 ns, 5V ±10%
450 ns, 5V ±5%
F
1
6
0 to 70 °C
–40 to 85 °C
Fora list ofavailable options (Speed, VCC Tolerance, Package, etc...) refer to the current Memory Shortform
catalogue.
For further information on any aspect of this device, please contact SGS-THOMSON Sales Office nearest
to you.
7/9
M2716
FDIP24W - 24 pin Ceramic Frit-seal DIP, with window
mm
Min
inches
Min
Symb
Typ
Max
5.71
1.78
5.08
0.55
1.42
0.31
32.30
15.80
13.36
–
Typ
Max
0.225
0.070
0.200
0.022
0.056
0.012
1.272
0.622
0.526
–
A
A1
A2
B
0.50
3.90
0.40
1.17
0.22
0.020
0.154
0.016
0.046
0.009
B1
C
D
E
15.40
13.05
–
0.606
0.514
–
E1
e1
e3
eA
L
2.54
0.100
1.100
27.94
–
–
–
–
16.17
3.18
1.52
–
18.32
4.10
2.49
–
0.637
0.125
0.060
–
0.721
0.161
0.098
–
S
7.11
0.280
α
4°
15°
4°
15°
N
24
24
FDIP24W
A2
A
A1
e1
L
B1
B
α
C
eA
e3
D
S
N
1
E1
E
FDIPW-a
Drawing is not to scale
8/9
M2716
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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9/9
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