M27C64A-25C1X [STMICROELECTRONICS]
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM; 64 Kbit的是8K ×8 UV EPROM和OTP EPROM
| 型号： | M27C64A-25C1X |
| 厂家： | 
ST |
| 描述： | 64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
| 文件： | 总12页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M27C64A
64 Kbit (8Kb x 8) UV EPROM and OTP EPROM
5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
FAST ACCESS TIME: 150ns
LOW POWER “CMOS” CONSUMPTION:
– Active Current 30mA
– Standby Current 100µA
28
PROGRAMMING VOLTAGE: 12.5V ± 0.25V
HIGH SPEED PROGRAMMING
(less than 1 minute)
1
PLCC32 (C)
FDIP28W (F)
ELECTRONIC SIGNATURE
– Manufacturer Code: 9Bh
– Device Code: 08h
DESCRIPTION
The M27C64A is a 64Kbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large programs and is
organized as 8,192 by 8 bits.
Figure 1. Logic Diagram
The FDIP28W (window ceramic frit-seal package)
has transparent lid which allows the user to expose
the chip to ultraviolet light to erase the bit pattern.
A new pattern can then be written to the device by
following the programming procedure.
V
V
PP
CC
For applications where the content is programmed
only on time and erasure is not required, the
M27C64A is offered in PLCC32 package.
13
8
A0-A12
Q0-Q7
P
M27C64A
Table 1. Signal Names
E
A0-A12
Q0-Q7
E
Address Inputs
Data Outputs
Chip Enable
Output Enable
Program
G
G
V
SS
AI00834B
P
VPP
VCC
VSS
Program Supply
Supply Voltage
Ground
March 1998
1/12
M27C64A
Figure 2A. DIP Pin Connections
Figure 2B. LCC Pin Connections
V
1
2
3
4
5
6
7
8
9
28
27
V
P
PP
CC
A12
A7
A6
A5
A4
A3
A2
A1
1 32
26 NC
25 A8
24 A9
23 A11
A6
A8
A9
A11
NC
G
A5
A4
A3
22
G
M27C64A
A2
A1
A0
NC
Q0
9
M27C64A
25
21 A10
20
A10
E
E
A0 10
Q0 11
Q1 12
Q2 13
19 Q7
18 Q6
17 Q5
16 Q4
15 Q3
Q7
Q6
17
V
14
SS
AI00835
AI00836
Warning:
Warning:
NC = Not Connected, DU = Don’t Use
NC = Not Connected
Table 2. Absolute Maximum Ratings (1)
Symbol
TA
Parameter
Value
–40 to 125
–50 to 125
–65 to 150
–2 to 7
Unit
Ambient Operating Temperature (3)
Temperature Under Bias
Storage Temperature
°C
°C
°C
V
TBIAS
TSTG
(2)
VIO
Input or Output Voltages (except A9)
Supply Voltage
VCC
–2 to 7
V
(2)
VA9
A9 Voltage
–2 to 13.5
–2 to 14
V
VPP
Program Supply Voltage
V
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
DEVICE OPERATION
Read Mode
The modes of operation of the M27C64A are listed
in the Operating Modes table. A single power sup-
ply is required in the read mode. All inputs are TTL
levels except for VPP and 12V on A9 for Electronic
Signature.
The M27C64A has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
2/12
M27C64A
be used to gate data to the output pins, inde-
pendent of device selection. Assuming that the
addresses are stable, the address access time
(tAVQV) is equal to the delay from E to output (tELQV).
Data is available at the output after a delay of tGLQV
from the falling edge of G, assuming that E has
been low and the addresses have been stable for
control bus. This ensures that all deselected mem-
ory devices are in their low power standby mode
and that the output pins are only active when data
is required from a particular memory device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at the
output.
at least tAVQV-tGLQV
.
Standby Mode
The M27C64A has a standby mode which reduces
µ
the active current from 30mA to 100 A. The
M27C64A is placed in the standby mode by apply-
ing a CMOS high signal to the E input. When in the
standby mode, the outputs are in a high impedance
state, independent of the G input.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
Two Line Output Control
Because EPROMs are usually used in larger mem-
ory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
µ
pacitors. It is recommended that a 0.1 F ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
a. the lowest possible memory power dissipation,
µ
4.7 F bulk electrolytic capacitor should be used
b. complete assurance that output bus contention
will not occur.
between VCC and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
Table 3. Operating Modes
Mode
E
G
VIL
VIH
VIH
VIL
X
P
VIH
A9
X
VPP
VCC
VCC
VPP
VPP
VPP
VCC
VCC
Q0 - Q7
Data Out
Hi-Z
Read
VIL
VIL
VIL
VIL
VIH
VIH
VIL
Output Disable
Program
VIH
X
VIL Pulse
VIH
X
Data In
Data Out
Hi-Z
Verify
X
Program Inhibit
Standby
X
X
X
X
X
Hi-Z
Electronic Signature
VIL
VIH
VID
Codes
Note
±
: X = VIH or VIL, VID = 12V 0.5V
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
VIL
VIH
Q7
1
Q6
0
Q5
0
Q4
1
Q3
1
Q2
Q1
1
Q0
1
Hex Data
9Bh
0
0
0
0
0
0
1
0
0
08h
3/12
M27C64A
Programming
E input inhibits the other M27C64A from being
programmed.
When delivered (and after each erasure for UV
EPROM), all bits of the M27C64A are in the "1"
state. Data is introduced by selectively program-
ming "0"s into the desired bit locations. Although
only "0"s will be programmed, both "1"s and "0"s
can be present in the data word. The only way to
change a "0" to a "1" is by die exposition to ultra-
violet light (UV EPROM). The M27C64A is in the
programming mode when Vpp input is at 12.5V, E
is at VIL and P is pulsed to VIL. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. VCC is specified to
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correctly
programmed. The verify is accomplished with E
and G at VIL, P at VIH, VPP at 12.5V and VCC at 6V.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm. The
±
be 6V 0.25V.
°
± °
ES mode is functional in the 25 C 5 C ambient
temperature range that is required when program-
ming the M27C64A. To activate the ES mode, the
programming equipmentmust force 11.5Vto 12.5V
on address line A9 of the M27C64A, with
VPP=VCC=5V. Two identifier bytes may then be
sequenced from the device outputs by toggling
address line A0 from VIL to VIH. All other address
lines must be held at VIL during Electronic Signa-
ture mode.
High Speed Programming
The high speed programming algorithm, described
in the flowchart, rapidly programs the M27C64A
using an efficient and reliable method, particularly
suited to the production programming environ-
ment. An individual device will take around 1minute
to program.
Program Inhibit
Programming of multiple M27C64A in parallel with
different data is also easily accomplished. Except
for E, all like inputs including G of the parallel
M27C64A may be common. A TTL low level pulse
applied to a M27C64A P input, with E low and VPP
at 12.5V, will program that M27C64A. A high level
Byte 0 (A0=VIL) represents the manufacturer code
and byte 1 (A0=VIH) the device identifier code. For
the STMicroelectronics M27C64A, these two iden-
tifier bytes are given in Table 4 and can be read-out
on outputs Q0 to Q7.
4/12
M27C64A
AC MEASUREMENT CONDITIONS
Figure 4. AC Testing Load Circuit
Input Rise and Fall Times
≤ 20ns
1.3V
Input Pulse Voltages
0.4V to 2.4V
0.8V to 2.0V
Input and Output Timing Ref.
Voltages
1N914
Note that Output Hi-Z is defined as the point where data
is no longer driven.
3.3kΩ
Figure 3. AC Testing Input Output Waveforms
DEVICE
UNDER
TEST
OUT
C
= 100pF
2.4V
L
2.0V
0.8V
0.4V
C
includes JIG capacitance
L
AI00828
AI00826
Table 5. Capacitance (1)
Symbol
°
(TA = 25 C, f = 1 MHz )
Parameter
Test Condition
VIN = 0V
Min
Max
6
Unit
pF
CIN
Input Capacitance
Output Capacitance
COUT
VOUT = 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
VALID
tGLQV
VALID
A0-A12
tAVQV
tAXQX
E
tEHQZ
tGHQZ
G
tELQV
Hi-Z
Q0-Q7
AI00778B
5/12
M27C64A
Table 6. Read Mode DC Characteristics (1)
(TA = 0 to 70 C or –40 to 85 C: VCC = 5V 10%; VPP = VCC
°
°
±
)
Symbol
ILI
Parameter
Input Leakage Current
Output Leakage Current
Test Condition
Min
Max
±10
±10
Unit
µA
0V ≤ VIN ≤ VCC
ILO
0V ≤ VOUT ≤ VCC
µA
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
ICC
Supply Current
30
mA
ICC1
ICC2
IPP
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
E = VIH
E > VCC – 0.2V
VPP = VCC
1
100
mA
µA
µA
V
100
VIL
Input Low Voltage
–0.3
2
0.8
(2)
VIH
Input High Voltage
VCC + 1
0.4
V
VOL
VOH
Output Low Voltage
IOL = 2.1mA
IOH = –400µA
IOH = –100µA
V
Output High Voltage TTL
Output High Voltage CMOS
2.4
V
VCC – 0.7V
V
Notes:
1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Table 7. Read Mode AC Characteristics (1)
(TA = 0 to 70 C or –40 to 85 C: VCC = 5V 10%; VPP = VCC
°
°
±
)
M27C64A
-20 -25
Symbol
Alt
Parameter
Test Condition
Unit
-15
-30
Min Max Min Max Min Max Min Max
Address Valid to
Output Valid
tAVQV
tELQV
tGLQV
tACC
tCE
tOE
tDF
tDF
tOH
E = VIL, G = VIL
G = VIL
150
150
75
200
200
80
250
250
100
60
300
300
120
105
105
ns
ns
ns
ns
ns
ns
Chip Enable Low to
Output Valid
Output Enable Low
to Output Valid
E = VIL
Chip Enable High to
Output Hi-Z
(2)
tEHQZ
G = VIL
0
0
0
50
0
0
0
50
0
0
0
0
0
0
Output Enable High
to Output Hi-Z
(2)
tGHQZ
E = VIL
50
50
60
Address Transition to
Output Transition
tAXQX
E = VIL, G = VIL
Notes:
1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP.
2. Sampled only, not 100% tested.
6/12
M27C64A
Table 8. Programming Mode DC Characteristics (1)
°
±
±
(TA = 25 C; VCC = 6V 0.25V; VPP = 12.5V 0.25V)
Symbol
ILI
Parameter
Input Leakage Current
Supply Current
Test Condition
Min
Max
±10
Unit
µA
mA
mA
V
V
IL ≤ VIN ≤ VIH
ICC
30
IPP
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
E = VIL
30
VIL
–0.3
2
0.8
VIH
VCC + 0.5
0.4
V
VOL
VOH
VID
IOL = 2.1mA
V
IOH = –400µA
2.4
V
11.5
12.5
.
V
Note:
1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
Table 9. Programming Mode AC Characteristics (1)
°
±
±
(TA = 25 C; VCC = 6V 0.25V; VPP = 12.5V 0.25V)
Symbol
tAVPL
Alt
tAS
Parameter
Test Condition
Min
2
Max
Unit
µs
Address Valid to Program Low
Input Valid to Program Low
VPP High to Program Low
VCC High to Program Low
tQVPL
tDS
2
µs
tVPHPL
tVCHPL
tVPS
tVCS
2
µs
2
µs
Chip Enable Low to
Program Low
tELPL
tCES
2
µs
ms
ms
Program Pulse Width (Initial)
0.95
2.85
1.05
tPLPH
tPW
Program Pulse Width (Over
Program)
78.75
Program High to Input
Transition
tPHQX
tQXGL
tGLQV
tDH
tOES
tOE
2
2
µs
µs
ns
ns
ns
Input Transition to Output
Enable Low
Output Enable Low to
Output Valid
100
130
Output Enable High to
Output Hi-Z
(2)
tGHQZ
tDFP
tAH
0
0
Output Enable High to
Address Transition
tGHAX
Notes:
1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
7/12
M27C64A
Figure 6. Programming and Verify Modes AC Waveforms
VALID
A0-A12
tAVPL
Q0-Q7
DATA IN
DATA OUT
tQVPL
tVPHPL
tVCHPL
tELPL
tPHQX
V
PP
tGLQV
tGHQZ
tGHAX
V
CC
E
P
tPLPH
tQXGL
G
PROGRAM
VERIFY
AI00779
ERASURE OPERATION (applies to UV EPROM)
Figure 7. Programming Flowchart
The erasure characteristics of the M27C64A is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that sunlight
and some type of fluorescent lamps have wave-
lengths in the 3000-4000 Å range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C64A in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C64A is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27C64Awindow to prevent unintentional era-
sure. The recommended erasure procedure for
the M27C64A is exposure to short wave ultraviolet
light which has a wavelength of 2537 Å. The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 15 W-sec/cm2.
The erasure time with this dosage is approximately
15 to 20 minutes using an ultraviolet lamp with
V
= 6V, V
= 12.5V
PP
CC
n = 1
P = 1ms Pulse
NO
NO
++n
> 25
VERIFY
YES
P = 3ms Pulse by n
++ Addr
YES
FAIL
Last
Addr
NO
YES
µ
2 power rating. The M27C64Ashould
12000 W/cm
CHECK ALL BYTES
be placed within 2.5 cm (1 inch) of the lamp tubes
during the erasure. Some lamps have a filter on
their tubes which should be removed before erasure.
1st: V
2nd: V
= 6V
= 4.2V
CC
CC
AI01167
8/12
M27C64A
ORDERING INFORMATION SCHEME
Example: M27C64A
-15 C 1 TR
Speed
150 ns
Package
Temperature Range
Option
-15
-20
-25
-30
F
FDIP28W
PLCC32
1
6
0 to 70 °C
X
Additional
Burn-in
200 ns
250 ns
300 ns
C
–40 to 85 °C
TR
Tape & Reel
Packing
For a list of available options (Speed, Package, etc...) refer to the current Memory Shortform catalogue.
For further information on any aspect of this device, please contact the STMicroelectronics Sales Office
nearest to you.
9/12
M27C64A
FDIP28W - 28 pin Ceramic Frit-seal DIP, with window
mm
Min
inches
Min
Symb
Typ
Max
5.72
1.40
4.57
4.50
0.56
–
Typ
Max
0.225
0.055
0.180
0.177
0.022
–
A
A1
A2
A3
B
0.51
3.91
3.89
0.41
–
0.020
0.154
0.153
0.016
–
B1
C
1.45
0.057
0.23
36.50
–
0.30
37.34
–
0.009
1.437
–
0.012
1.470
–
D
D2
E
33.02
15.24
1.300
0.600
–
–
–
–
E1
e
13.06
–
13.36
–
0.514
–
0.526
–
2.54
0.100
0.590
eA
eB
L
14.99
–
–
–
–
16.18
3.18
1.52
–
18.03
0.637
0.125
0.060
–
0.710
S
2.49
–
0.098
–
8.89
0.350
α
4°
11°
4°
11°
N
28
28
A2
A3
A1
A
L
α
B1
B
e
C
eA
eB
D2
D
S
N
1
E1
E
FDIPW-a
Drawing is no to scale
10/12
M27C64A
PLCC32 - 32 lead Plastic Leaded Chip Carrier - rectangular
mm
Min
2.54
1.52
–
inches
Min
Symb
Typ
Max
3.56
2.41
0.38
0.53
0.81
12.57
11.56
10.92
15.11
14.10
13.46
–
Typ
Max
0.140
0.095
0.015
0.021
0.032
0.495
0.455
0.430
0.595
0.555
0.530
–
A
A1
A2
B
0.100
0.060
–
0.33
0.66
12.32
11.35
9.91
14.86
13.89
12.45
–
0.013
0.026
0.485
0.447
0.390
0.585
0.547
0.490
–
B1
D
D1
D2
E
E1
E2
e
1.27
0.89
0.050
0.035
F
0.00
–
0.25
–
0.000
–
0.010
–
R
N
32
32
Nd
Ne
CP
7
7
9
9
0.10
0.004
D
A1
D1
A2
1 N
B1
e
Ne
E1 E
D2/E2
F
B
0.51 (.020)
1.14 (.045)
Nd
A
R
CP
PLCC
Drawing is no to scale
11/12
M27C64A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - All Rights Reserved
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12/12
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