M27V402-150B4 [STMICROELECTRONICS]
256KX16 OTPROM, 150ns, PDIP40, 0.600 INCH, PLASTIC, DIP-40;
| 型号： | M27V402-150B4 |
| 厂家： | 
ST |
| 描述： | 256KX16 OTPROM, 150ns, PDIP40, 0.600 INCH, PLASTIC, DIP-40 可编程只读存储器 光电二极管 |
| 文件： | 总15页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M27V402
4 Mbit (256Kb x16) Low Voltage UV EPROM and OTP EPROM
NOT FOR NEW DESIGN
■ M27V402 is replaced by the M27W402
■ LOW VOLTAGE READ OPERATION:
3V to 3.6V
■ ACCESS TIME: 120ns
■ LOW POWER CONSUMPTION:
40
40
– Active Current 15mA at 5MHz
1
1
– Standby Current 20µA
FDIP40W (F)
PDIP40 (B)
■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
■ PROGRAMMING TIME: 100µs/word
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 8Dh
DESCRIPTION
PLCC44 K)
TSOP40 (N)
10 x 20 mm
The M27V402 is a low voltage, low power 4 Mbit
UV erasable and electrically programmable
EPROM, ideally suited for handheld and portable
microprocessor systems requiring large programs.
It is organized as 262,144 by 16 bits.
Figure 1. Logic Diagram
The M27V402 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
V
V
PP
CC
The FDIP40W (window ceramc frit-seal package)
has a transparent lid which alws the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
18
16
A0-A17
Q0-Q15
For applications where the content is programmed
only one time and erasure is not required, the
M27V2is offered in PDIP40, PLCC44 and
TSOP40 (10 x 20 mm) packages.
E
M27V402
G
V
SS
AI01819
July 2000
1/15
This is information on a product still in production but not recommended for new designs.
M27V402
Figure 2A. DIP Connections
Figure 2B. LCC Connections
V
1
2
3
4
5
6
7
8
9
40
V
CC
PP
E
39 A17
38 A16
37 A15
36 A14
35 A13
34 A12
33 A11
32 A10
31 A9
Q15
Q14
Q13
Q12
Q11
Q10
Q9
1 44
Q12
A13
A12
A11
A10
A9
Q11
Q10
Q9
Q8
Q8 10
M27V402
V
12
M27V402
34
V
SS
SS
V
11
30
V
SS
SS
NC
Q7
Q6
Q5
Q4
NC
A8
A7
A6
A5
Q7 12
Q6 13
Q5 14
Q4 15
Q3 16
Q2 17
Q1 18
Q0 19
29 A8
28 A7
27 A6
26 A5
25 A4
24 A3
23 A2
22 A1
21 A0
23
AI01820
G
20
AI01862
Figure 2C. TSOP Connections
Table 1. Signal Names
A0-A17
Address Inputs
A9
A10
A11
A12
A13
A14
A15
A16
A17
1
40
V
SS
A8
Q0-Q15
Data Outputs
Chip Enable
Output Enable
Program Supply
Supply Voltage
Ground
A7
E
A6
A5
G
A4
A3
V
PP
V
CC
V
SS
A2
A1
V
10
11
M27V402
(Normal)
31
30
A0
CC
V
G
PP
E
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
NC
Not Connected Internally
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
20
21
V
SS
AI01821
2/15
M27V402
(1)
Table 2. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
°C
°C
°C
V
(3)
T
A
–40 to 125
–50 to 125
–65 to 150
–2 to 7
Ambient Operating Temperature
T
Temperature Under Bias
BIAS
T
STG
Storage Temperature
(2)
Input or Output Voltage (except A9)
V
IO
V
Supply Voltage
–2 to 7
–2 to 13.5
–2 to 14
V
V
V
CC
(2)
A9 Voltage
V
A9
V
Program Supply Voltage
PP
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
+0.5V with possible overshoot to V +2V for a period less than 20ns.
CC
CC
Table 3. Operating Modes
Mode
V
E
G
A9
X
Q15-Q0
Data Out
Hi-Z
PP
V
IL
V
V
V
or V
Read
IL
IH
IH
CC
CC
SS
V
V
V
or V
Output Disable
Program
X
IL
SS
V
IL
Pulse
V
X
Data In
Data Out
Hi-Z
PP
PP
PP
V
V
V
V
Verify
X
IH
IH
IH
IL
V
V
V
Program Inhibit
Standby
X
IH
V
or V
SS
X
X
Hi-Z
CC
V
IL
V
V
ID
V
CC
Electronic Signature
Codes
IL
Note: X = V or V , V = 12V ± 0.5V.
IH IL ID
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0
Q7
0
Q6
0
Q5
1
Q4
0
Q3
0
Q2
0
Q1
0
Q0
0
Hex Data
20h
V
IL
V
1
0
0
0
1
1
0
1
8Dh
IH
Note: Outputs Q15-Q8 are set to '0'.
3/15
M27V402
Table 5. AC Measurement Conditions
High Speed
≤ 10ns
Standard
≤ 20ns
Input Rise and Fall Times
Input Pulse Voltages
0 to 3V
1.5V
0.4V to 2.4V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
OUT
Standard
C
L
2.4V
2.0V
0.8V
0.4V
C
C
C
= 30pF for High Speed
= 100pF for Standard
includes JIG capacitance
L
L
L
AI01822
AI01823B
(1)
Table 6. Capacitance
Symbol
(T = 25 °C, f = 1 MHz)
A
Parameter
Test Condition
Min
Max
6
Unit
pF
C
V
= 0V
= 0V
Input Capacitance
Output Capacitance
IN
IN
C
V
OUT
12
pF
OUT
Note: 1. Sampled only, not 100% tested.
DEVICE OPERATION
(t
(t
of t
) is equal to the delay from E to output
). Data is available at the output after a delay
AVQV
ELQV
The operating modes of the M27V402 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
from the falling edge of G, assuming that
GLQV
E has been low and the addresses have been
stable for at least t
-t
.
AVQV GLQV
levels except for V and 12V on A9 for Electronic
PP
Signature.
Standby Mode
Read Mode
The M27V402 has a standby mode which reduces
the supply current from 20mA to 20µA with low
The M27V402 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins,
independent of device selection. Assuming that
the addresses are stable, the address access time
voltage operation V ≤ 3.6V, see Read Mode DC
CC
Characteristics table for details. The M27V402 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
4/15
M27V402
(1)
Table 7. Read Mode DC Characteristics
(TA = 0 to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; V
= 3.3V ± 10%; V = V
)
CC
PP
CC
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Test Condition
Min
Max
Unit
µA
I
±10
±10
0V ≤ V ≤ V
LI
IN
CC
I
LO
0V ≤ V
≤ V
OUT CC
µA
E = V , G = V , I
= 0mA,
IL
IL OUT
I
Supply Current
20
mA
CC
f = 5MHz, V = 3.6V
CC
I
E = V
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
1
mA
µA
µA
V
CC1
IH
I
20
10
0.8
E > V – 0.2V, V = 3.6V
CC2
CC
CC
I
V
= V
PP CC
PP
V
IL
Input Low Voltage
–0.3
2
(2)
V
+ 1
Input High Voltage
V
V
CC
IH
V
I
= 2.1mA
= –400µA
= –100µA
Output Low Voltage
0.4
V
V
V
OL
OL
OH
OH
I
I
Output High Voltage TTL
Output High Voltage CMOS
2.4
V
OH
V
–0.7V
CC
Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .
PP
CC
PP
2. Maximum DC voltage on Output is V +0.5V.
CC
Two Line Output Control
System Considerations
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I , has three seg-
CC
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
output capacitive and inductive loading of the de-
vice.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 0.1µF ceramic
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
capacitor be used on every device between V
CC
and V . This should be a high frequency capaci-
SS
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7µF bulk electrolytic capacitor should be
used between V and V for every eight devic-
CC
SS
es. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
5/15
M27V402
(1)
Table 8. Read Mode AC Characteristics
(TA = 0 to 70°C, –20 to 70°C, –20 to 85°C or –40 to 85°C; V
= 3.3V ± 10%; V = V
)
CC
PP
CC
M27V402
Symbol
Alt
Parameter
Test Condition
-120
-150
-200
Unit
Min Max Min Max Min Max
Address Valid to
Output Valid
t
t
E = V , G = V
120
120
60
150
150
80
200
200
100
50
ns
ns
ns
ns
ns
ns
AVQV
ACC
IL
IL
Chip Enable Low to
Output Valid
t
t
G = V
ELQV
CE
IL
IL
IL
IL
Output Enable Low to
Output Valid
t
t
E = V
G = V
E = V
GLQV
OE
Chip Enable High to
Output Hi-Z
(2)
t
0
0
5
50
0
0
0
50
0
0
0
t
DF
DF
EHQZ
Output Enable High to
Output Hi-Z
(2)
t
50
50
50
t
GHQZ
Address Transition to
Output Transition
t
t
E = V , G = V
IL IL
AXQX
OH
Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .
PP
CC
PP
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
VALID
A0-A17
tAVQV
tAXQX
E
tGLQV
tEHQZ
G
tELQV
tGHQZ
Hi-Z
Q0-Q15
DATA OUT
AI00731
6/15
M27V402
(1)
Table 9. Programming Mode DC Characteristics
(T = 25 °C; V = 6.25V ± 0.25V; V = 12.75V ± 0.25V)
A
CC
PP
Symbol
Parameter
Test Condition
Min
Max
±10
50
Unit
µA
mA
mA
V
I
0 ≤ V ≤ V
Input Leakage Current
Supply Current
LI
IN
CC
I
CC
I
PP
E = V
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
50
IL
V
–0.3
2
0.8
IL
V
IH
V
+ 0.5
CC
V
V
OL
I
= 2.1mA
OL
0.4
V
V
OH
I
= –400µA
2.4
V
OH
V
ID
11.5
12.5
V
Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .
PP
CC
PP
(1)
Table 10. Programming Mode AC Characteristics
(T = 25 °C; V = 6.25V ± 0.25V; V = 12.75V ± 0.25V)
A
CC
PP
Symbol
Alt
Parameter
Test Condition
Min
2
Max
Unit
µs
µs
µs
µs
µs
µs
µs
ns
ns
t
t
t
Address Valid to Chip Enable Low
Input Valid to Chip Enable Low
AVEL
AS
t
2
QVEL
DS
t
t
t
V
High to Chip Enable Low
High to Chip Enable Low
2
VPHEL
VPS
PP
CC
t
V
2
VCHEL
VCS
t
t
PW
Chip Enable Program Pulse Width
Chip Enable High to Input Transition
Input Transition to Output Enable Low
Output Enable Low to Output Valid
Output Enable High to Output Hi-Z
95
2
105
ELEH
t
t
DH
EHQX
t
t
OES
2
QXGL
t
t
100
130
GLQV
OE
t
t
DFP
0
0
GHQZ
Output Enable High to Address
Transition
t
t
AH
ns
GHAX
Note: 1. V must be applied simultaneously with or before V and removed simultaneously or after V .
PP
CC
PP
2. Sampled only, not 100% tested.
Programming
light (UV EPROM). The M27V402 is in the pro-
gramming mode when V input is at 12.75V, G ia
PP
When delivered (and after each erasure for UV
EPROM), all bits of the M27V402 are in the ’1’
state. Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’s will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposure to ultraviolet
at V and E is pulsed to V . The data to be pro-
IH
IL
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
is specified to be
CC
6.25V ± 0.25V.
7/15
M27V402
Figure 6. Programming and Verify Modes AC Waveforms
VALID
A0-A17
tAVEL
Q0-Q15
DATA OUT
DATA IN
tQVEL
tEHQX
V
PP
tVPHEL
tVCHEL
tGLQV
tGHQZ
tGHAX
V
CC
E
tELEH
tQXGL
G
PROGRAM
VERIFY
AI00730
Figure 7. Programming Flowchart
PRESTO II Programming Algorithm
PRESTO II Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 26.5 seconds. Pro-
gramming with PRESTO II consists of applying a
sequence of 100µs program pulses to each byte
until a correct verify occurs (see Figure 7). During
programming and verify operation, a MARGIN
MODE circuit is automatically activated in order to
guarantee that each cell is programmed with
enough margin. No overprogram pulse is applied
V
= 6.25V, V
= 12.75V
PP
CC
n = 0
E = 100µs Pulse
since the verify in MARGIN MODE at V
higher than 3.6V provides necessary margin to
each programmed cell.
much
CC
NO
NO
++n
= 25
VERIFY
YES
++ Addr
Program Inhibit
YES
Programming of multiple M27V402s in parallel
with different data is also easily accomplished. Ex-
cept for E, all like inputs including G of the parallel
M27V402 may be common. A TTL low level pulse
Last
NO
FAIL
Addr
applied to a M27V402's E input, with V
at
PP
YES
12.75V, will program that M27V402. A high level E
input inhibits the other M27V402s from being pro-
grammed.
CHECK ALL WORDS
1st: V
2nd: V
= 6V
= 4.2V
CC
CC
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correct-
ly programmed. The verify is accomplished with G
AI00726C
at V , E at V , V at 12.75V and V at 6.25V.
IL
IH
PP
CC
8/15
M27V402
Electronic Signature
posed to light with wavelengths shorter than ap-
proximately 4000Å. It should be noted that sunlight
and some type of fluorescent lamps have wave-
lengths in the 3000-4000Å range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27V402 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27V402 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27V402 window to prevent unintentional era-
sure. The recommended erasure procedure for
the M27V402 is exposure to short wave ultraviolet
light which has a wavelength of 2537Å. The inte-
grated dose (i.e. UV intensity x exposure time) for
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27V402. To activate the ES mode,
the programming equipment must force 11.5V to
12.5V on address line A9 of the M27V402 with
V
= V = 5V. Two identifier bytes may then be
PP
CC
sequenced from the device outputs by toggling ad-
dress line A0 from V to V . All other address
IL
IH
lines must be held at V during Electronic Signa-
ture mode. Byte 0 (A0 = V ) represents the man-
ufacturer code and byte 1 (A0 = V ) the device
identifier code. For the STMicroelectronics
M27V402, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q7 to Q0.
IL
2
erasure should be a minimum of 15 W-sec/cm .
IL
The erasure time with this dosage is approximate-
ly 15 to 20 minutes using an ultraviolet lamp with
IH
2
12000 µW/cm power rating. The M27V402
should be placed within 2.5 cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27V402 is
such that erasure begins when the cells are ex-
9/15
M27V402
Table 11. Ordering Information Scheme
Example:
M27V402
-120 K
1
TR
Device Type
M27
Supply Voltage
V = 3.3V ±10%
Device Function
402 = 4 Mbit (256Kb x16)
Speed
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP40W
B = PDIP40
K = PLCC44
N = TSOP40: 10 x 20 mm
Temperature Range
1 = 0 to 70 °C
4 = –20 to 70 °C
5 = –20 to 85 °C
6 = –40 to 85 °C
Options
TR = Tape & Reel Packing
M27V402 is replaced by the M27W402
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
10/15
M27V402
Table 12. FDIP40W - 40 pin Ceramic Frit-seal DIP with window, Package Mechanical Data
mm
Min
inches
Min
Symb
Typ
Max
5.72
1.40
4.57
4.50
0.56
–
Typ
Max
0.225
0.055
0.180
0.177
0.022
–
A
A1
A2
A3
B
0.51
3.91
3.89
0.41
–
0.020
0.154
0.153
0.016
–
B1
C
1.45
0.057
0.23
51.79
–
0.30
52.60
–
0.009
2.039
–
0.012
2.071
–
D
D2
E
48.26
15.24
1.900
0.600
–
–
–
–
E1
e
13.06
–
13.36
–
0.514
–
0.526
–
2.54
0.100
0.590
eA
eB
L
14.99
–
–
–
–
16.18
3.18
1.52
–
18.03
0.637
0.125
0.060
–
0.710
S
2.49
–
0.098
–
7.62
0.300
α
4°
11°
4°
11°
N
40
40
Figure 8. FDIP40W - 40 pin Ceramic Frit-seal DIP with window, Package Outline
A2
A3
A1
A
L
α
B1
B
e
C
eA
eB
D2
D
S
N
1
E1
E
FDIPW-a
Drawing is not to scale.
11/15
M27V402
Table 13. PDIP40 - 40 pin Plastic DIP, 600 mil width, Package Mechanical Data
mm
Min
–
inches
Symb
Typ
4.45
0.64
Max
–
Typ
Min
–
Max
–
A
A1
A2
B
0.175
0.025
0.38
3.56
0.38
1.14
0.20
51.78
–
–
0.015
0.140
0.015
0.045
0.008
2.039
–
–
3.91
0.53
1.78
0.31
52.58
–
0.154
0.021
0.070
0.012
2.070
–
B1
C
D
D2
E
48.26
1.900
14.80
13.46
–
16.26
13.99
–
0.583
0.530
–
0.640
0.551
–
E1
e1
eA
eB
L
2.54
0.100
0.600
15.24
–
–
–
–
15.24
3.05
1.52
0°
17.78
3.81
2.29
15°
0.600
0.120
0.060
0°
0.700
0.150
0.090
15°
S
α
N
40
40
Figure 9. PDIP40 - 40 pin Plastic DIP, 600 mil width, Package Outline
A2
A
L
A1
e1
α
C
B1
B
eA
eB
D2
D
S
N
1
E1
E
PDIP
Drawing is not to scale.
12/15
M27V402
Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
mm
Min
4.20
2.29
–
inches
Min
Symb
Typ
Max
4.70
3.04
0.51
0.53
0.81
17.65
16.66
16.00
17.65
16.66
16.00
–
Typ
Max
0.185
0.120
0.020
0.021
0.032
0.695
0.656
0.630
0.695
0.656
0.630
–
A
A1
A2
B
0.165
0.090
–
0.33
0.66
17.40
16.51
14.99
17.40
16.51
14.99
–
0.013
0.026
0.685
0.650
0.590
0.685
0.650
0.590
–
B1
D
D1
D2
E
E1
E2
e
1.27
0.89
0.050
0.035
F
0.00
–
0.25
–
0.000
–
0.010
–
R
N
44
44
CP
0.10
0.004
Figure 10. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline
D
A1
D1
A2
1 N
B1
e
Ne
E1 E
D2/E2
F
B
0.51 (.020)
1.14 (.045)
Nd
A
R
CP
PLCC
Drawing is not to scale.
13/15
M27V402
Table 15. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20 mm, Package Mechanical Data
mm
Min
inches
Min
Symb
Typ
Max
1.20
0.15
1.05
0.27
0.21
20.20
18.50
10.10
-
Typ
Max
0.047
0.006
0.041
0.011
0.008
0.795
0.728
0.398
-
A
A1
A2
B
0.05
0.95
0.17
0.10
19.80
18.30
9.90
-
0.002
0.037
0.007
0.004
0.780
0.720
0.390
-
C
D
D1
E
e
0.50
0.020
L
0.50
0°
0.70
5°
0.020
0°
0.028
5°
α
N
40
40
CP
0.10
0.004
Figure 11. TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 20 mm, Package Outline
A2
1
N
e
E
B
N/2
D1
D
A
CP
DIE
C
TSOP-a
Drawing is not to scale
A1
α
L
14/15
M27V402
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
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