M28010-20NA1 [STMICROELECTRONICS]
128KX8 EEPROM 5V, 200ns, PDSO32, 8 X 20 MM, TSOP-32;
| 型号： | M28010-20NA1 |
| 厂家： | 
ST |
| 描述： | 128KX8 EEPROM 5V, 200ns, PDSO32, 8 X 20 MM, TSOP-32 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管 |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M28010
1 Mbit (128K x 8) Parallel EEPROM
With Software Data Protection
DATA BRIEFING
■ Fast Access Time: 100 ns
■ Single Supply Voltage:
– 4.5 V to 5.5 V for M28010
– 2.7 V to 3.6 V for M28010-W
– 1.8 V to 2.4 V for M28010-R
■ Low Power Consumption
32
■ Fast BYTE and PAGE WRITE (up to 128 Bytes)
■ Enhanced Write Detection and Monitoring:
– Data Polling
1
PDIP32 (BA)
– Toggle Bit
– Page Load Timer Status
■ JEDEC Approved Bytewide Pin-Out
■ Software Data Protection
■ Hardware Data Protection
TSOP32 (NA)
8 x 20 mm
■ Software Chip Erase
PLCC32 (KA)
■ 100000 Erase/Write Cycles (minimum)
■ Data Retention (minimum): 10 Years
DESCRIPTION
The M28010 devices consist of 128Kx8 bits of low
power, parallel EEPROM, fabricated with
STMicroelectronics’ proprietary double polysilicon
CMOS technology. The devices offer fast access
time, with low power dissipation, and require a sin-
gle voltage supply (5V, 3V or 2V, depending on the
option chosen).
Figure 1. Logic Diagram
V
CC
17
8
A0-A16
DQ0-DQ7
Table 1. Signal Names
A0-A16
Address Input
Data Input / Output
Write Enable
Chip Enable
W
E
M28010
DQ0-DQ7
W
E
G
G
Output Enable
Supply Voltage
Ground
V
SS
V
CC
AI02221
V
SS
January 1999
1/3
Complete data available on Data-on-Disc CD-ROM or at www.st.com
M28010
Figure 2C. TSOP Connections
Figure 2A. DIP Connections
A11
A9
1
32
G
DU
A16
A15
A12
A7
1
2
3
4
5
6
7
8
9
32
31
V
CC
W
A10
E
A8
30 DU
29 A14
28 A13
27 A8
26 A9
25 A11
A13
A14
DU
W
DQ7
DQ6
DQ5
DQ4
DQ3
A6
A5
V
8
9
25
24
A4
CC
DU
M28010
M28010
V
A3
24
23 A10
22
G
SS
A16
A15
A12
A7
DQ2
DQ1
DQ0
A0
A2 10
A1 11
E
A0 12
21 DQ7
20 DQ6
19 DQ5
18 DQ4
17 DQ3
DQ0 13
DQ1 14
DQ2 15
A6
A1
A5
A2
A4
16
17
A3
V
16
SS
AI02222
AI02224
Note: 1. DU = Do Not Use
Note: 1. DU = Do Not Use
Figure 2B. PLCC Connections
data retention. The organization of the data in a 4
byte (32-bit) “word” format leads to significant sav-
ings in power consumption. Once a byte has been
read, subsequent byte read cycles from the same
“word” (with addresses differing only in the two
least significant bits) are fetched from the previ-
ously loaded Read Buffer, not from the memory ar-
ray. As a result, the power consumption for these
subsequent read cycles is much lower than the
power consumption for the first cycle. By careful
design of the memory access patterns, a 50% re-
duction in the power consumption is possible.
1 32
A7
A14
A13
A8
A6
A5
A4
A9
A3
A2
9
M28010
25 A11
G
A1
A10
E
A0
ORDERING INFORMATION
DQ0
DQ7
Devices are shipped from the factory with the
memory content set at all ‘1’s (FFh).
17
The notation used for the device number is as
shown in Table 2. For a list of available options
(speed, package, etc.) or for further information on
any aspect of this device, please contact the ST
Sales Office nearest to you.
AI02223
Note: 1. DU = Do Not Use
The device has been designed to offer a flexible
microcontroller interface, featuring both hardware
and software hand-shaking, with Data Polling and
Toggle Bit. The device supports a 128 byte Page
Write operation. Software Data Protection (SDP)
is also supported, using the standard JEDEC algo-
rithm.
The M28010 is designed for applications requiring
as much as 100,000 write cycles and ten years of
2/3
M28010
Table 2. Ordering Information Scheme
Example:
M28010
-10
W
KA
6
T
Option
T
Tape & Reel Packing
Speed
100 ns
120 ns
Temperature Range
-10
1
-12
-15
-20
-25
0 to 70 °C
1
150 ns
200 ns
250 ns
6
–40 to 85 °C
Operating Voltage
Package
PDIP32
blank 4.5 V to 5.5 V
BA
KA
W
R
2.7 V to 3.6 V
1.8 V to 2.4 V
PLCC32
NA TSOP32: 8 x 20mm
Note: 1. This temperature range on request only.
3/3
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