M28W320EBB85N1 [STMICROELECTRONICS]
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory; 32兆位（2MB X16 ，引导块） 3V供应闪存
| 型号： | M28W320EBB85N1 |
| 厂家： | 
ST |
| 描述： | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| 文件： | 总45页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M28W320EBT
M28W320EBB
32 Mbit (2Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
■ SUPPLY VOLTAGE
Figure 1. Packages
– V = 2.7V to 3.6V Core Power Supply
DD
– V
= 1.65V to 3.6V for Input/Output
DDQ
FBGA
– V = 12V for fast Program (optional)
PP
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME
TFBGA47 (ZB)
6.39 x 6.37mm
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
■ COMMON FLASH INTERFACE
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ BLOCK PROTECTION on TWO PARAMETER
TSOP48 (N)
12 x 20mm
BLOCKS
– WP for Block Protection
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W320EBT: 88BCh
– Bottom Device Code, M28W320EBB: 88BDh
October 2002
1/45
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M28W320EBT, M28W320EBB
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. TFBGA Connections (Top view through package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
V
V
V
V
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DD
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DDQ
Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
PP
SS
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 2. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Memory Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 3. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Block Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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M28W320EBT, M28W320EBB
Table 6. Memory Blocks Protection Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 15
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Program/Erase Controller Status (Bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Erase Suspend Status (Bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Erase Status (Bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Program Status (Bit 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
V
Status (Bit 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PP
Program Suspend Status (Bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block Protection Status (Bit 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Reserved (Bit 0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 9. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 10. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 6. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 11. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 12. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 8. Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 13. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 9. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 14. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 10. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 15. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 11. Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 16. Power-Up and Reset AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 12. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . . . 27
Table 17. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 27
Figure 13. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline28
Table 18. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data . . . 28
Figure 14. TFBGA47 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 29
Figure 15. TFBGA47 Daisy Chain - PCB Connections proposal (Top view through package) . . . . 29
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 19. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 20. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
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M28W320EBT, M28W320EBB
Table 21. Top Boot Block Addresses, M28W320EBT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 22. Bottom Boot Block Addresses, M28W320EBB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 23. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 24. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 25. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 26. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 27. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 28. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 16. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 17. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 19. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 40
Figure 20. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 21. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 42
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE . . . . . . . 43
Table 29. Write State Machine Current/Next. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 30. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
4/45
M28W320EBT, M28W320EBB
SUMMARY DESCRIPTION
The M28W320EB is a 32 Mbit (2 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at the block level and programmed in-system
on a Word-by-Word basis. These operations can
be performed using a single low voltage (2.7 to
Figure 2. Logic Diagram
V
V
V
DD DDQ PP
3.6V) supply. V
down to 1.65V. An optional 12V V power supply
allows to drive the I/O pin
DDQ
21
16
PP
is provided to speed up customer programming.
A0-A20
The device features an asymmetrical blocked ar-
chitecture. The M28W320EB has an array of 71
blocks: 8 Parameter Blocks of 4 KWord and 63
Main Blocks of 32 KWord. M28W320EBT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W320EBB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
DQ0-DQ15
W
E
M28W320EBT
M28W320EBB
G
RP
WP
Parameter blocks 0 and 1 can be protected from
accidental programming or erasure. Each block
can be erased separately. Erase can be suspend-
ed in order to perform either read or program in
any other block and then resumed. Program can
be suspended to read data in any other block and
then resumed. Each block can be programmed
and erased over 100,000 cycles.
V
SS
AI05514
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (10 X 20mm),
and TFBGA47 (6.39 x 6.37mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ15
Data Input/Output
Chip Enable
E
G
Output Enable
Write Enable
Reset
W
RP
WP
Write Protect
Core Power Supply
V
DD
Power Supply for
Input/Output
V
DDQ
Optional Supply Voltage for
Fast Program & Erase
V
V
PP
Ground
SS
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M28W320EBT, M28W320EBB
Figure 3. TSOP Connections
A15
1
48
A16
A14
A13
A12
A11
A10
A9
V
V
DDQ
SS
DQ15
DQ7
DQ14
DQ6
A8
DQ13
DQ5
NC
A20
W
DQ12
DQ4
RP
12
13
37
36
V
M28W320EBT
M28W320EBB
DD
V
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
PP
WP
A19
A18
A17
A7
A6
A5
A4
A3
V
E
SS
A2
A1
24
25
A0
AI05515
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M28W320EBT, M28W320EBB
Figure 4. TFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
WP
A18
A20
DQ2
DQ3
A19
A17
A
B
C
D
E
F
A13
A14
A15
A16
A11
A10
A8
W
V
A7
A5
A4
A2
A1
A0
PP
RP
A12
A9
A6
A3
DQ11
DQ12
DQ4
DQ14
DQ15
DQ7
DQ5
DQ6
DQ13
DQ8
DQ9
DQ10
E
V
DQ0
DQ1
V
DDQ
SS
V
V
SS
DD
G
AI03823
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M28W320EBT, M28W320EBB
Figure 5. Block Addresses
M28W320EBT
M28W320EBB
Top Boot Block Addresses
Bottom Boot Block Addresses
1FFFFF
4 KWords
1FF000
1FFFFF
32 KWords
32 KWords
1F8000
1F7FFF
Total of 8
4 KWord Blocks
1F0000
Total of 63
32 KWord Blocks
1F8FFF
4 KWords
1F8000
1F7FFF
32 KWords
1F0000
00FFFF
32 KWords
4 KWords
008000
007FFF
Total of 63
007000
32 KWord Blocks
Total of 8
00FFFF
4 KWord Blocks
32 KWords
008000
007FFF
000FFF
000000
32 KWords
4 KWords
000000
AI05516
Note: Also see Appendix A, Tables 21 and 22 for a full listing of the Block Addresses.
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M28W320EBT, M28W320EBB
SIGNAL DESCRIPTIONS
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
mal operation. Exiting reset mode the device
enters read array mode, but a negative transition
of Chip Enable or a change of the address is re-
quired to ensure valid data outputs.
V
Supply Voltage. V
provides the power
DD
DD
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or data to be programmed during a Write Bus op-
eration.
V
Supply Voltage. V
provides the
power supply to the I/O pins and enables all Out-
puts to be powered independently from V . V
DDQ
DDQ
DD DDQ
can be tied to V
or can use a separate supply.
DD
V
Program Supply Voltage. V
is both a
PP
PP
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin. The Supply Voltage V
and the
DD
at V and Reset is at V the device is in active
Program Supply Voltage V
can be applied in
IL
IH
PP
mode. When Chip Enable is at V the memory is
any order.
IH
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
If V is kept in a low voltage range (0V to 3.6V)
PP
V
is seen as a control input. In this case a volt-
PP
age lower than V
gives an absolute protection
PPLK
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
against program or erase, while V
ables these functions (see Table 12, DC Charac-
teristics for the relevant values). V is only
sampled at the beginning of a Program or Erase;
a change in its value after the operation has start-
ed does not have any effect on Program or Erase,
however for Double or Quadruple Word Program
the results are uncertain.
> V
en-
PP
PP1
PP
If V is in the range 11.4V to 12.6V it acts as a
PP
Write Protect (WP). Write Protect is an input to
protect or unprotect the two lockable parameter
power supply pin. In this condition V
must be
PP
stable until the Program/Erase algorithm is com-
pleted (see Table 14 and 15).
blocks. When Write Protect is at V , the lockable
IL
blocks are protected and Program or Erase oper-
ations are not possible. When Write Protect is at
V
Ground. V is the reference for all voltage
SS
SS
V , the lockable blocks are unprotected and can
IH
measurements.
be programmed or erased (refer to Table 5, Mem-
ory Blocks Protection Truth).
Note: Each device in a system should have
V
V
and V decoupled with a 0.1µF ca-
DD, DDQ PP
Reset (RP). The Reset input provides a hard-
pacitor close to the pin. See Figure 7, AC Mea-
surement Load Circuit. The PCB trace widths
ware reset of the memory. When Reset is at V ,
IL
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
should be sufficient to carry the required V
Program and Erase currents.
PP
mized. When Reset is at V , the device is in nor-
IH
9/45
M28W320EBT, M28W320EBB
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby, Automatic Standby and Re-
set. See Table 2, Bus Operations, for a summary.
See Figures 9 and 10, Write AC Waveforms, and
Tables 14 and 15, Write AC Characteristics, for
details of the timing requirements.
Output Disable. The data outputs are high im-
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output En-
pedance when the Output Enable is at V .
IH
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable is at V and the device is in
IH
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
able must be at V in order to perform a read op-
IL
eration. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read de-
pends on the previous command written to the
memory (see Command Interface section). See
Figure 8, Read Mode AC Waveforms, and Table
13, Read AC Characteristics, for details of when
the output becomes valid.
V
during a program or erase operation, the de-
IH
vice enters Standby mode when finished.
Automatic Standby. Automatic Standby pro-
vides a low power consumption state during Read
mode. Following a read operation, the device en-
ters Automatic Standby after 150ns of bus inactiv-
ity, even if Chip Enable is low, V , and the supply
IL
Read mode is the default state of the device when
exiting Reset or after power-up.
current is reduced to I
puts will still output data.
. The data Inputs/Out-
DD1
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
Reset. During Reset mode, when Output Enable
is low, V , the memory is deselected and the out-
IL
puts are high impedance. The memory is in Reset
and Write Enable are at V with Output Enable at
mode when Reset is at V . The power consump-
IL
IL
V . Commands, Input Data and Addresses are
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
tion is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write En-
IH
able inputs. If Reset is pulled to V during a Pro-
SS
gram or Erase, this operation is aborted and the
memory content is no longer valid.
Table 2. Bus Operations
V
Operation
Read
E
G
W
RP
WP
X
DQ0-DQ15
Data Output
Data Input
Hi-Z
PP
V
V
V
IH
V
Don’t Care
V or V
DD
IL
IL
IL
IL
IH
IH
IH
V
V
V
V
V
V
V
V
Write
X
IL
IH
PPH
V
Output Disable
Standby
Reset
X
Don’t Care
Don’t Care
Don’t Care
IH
IH
V
X
X
X
Hi-Z
IH
IH
V
IL
X
X
X
X
Hi-Z
Note: X = V or V , V = 12V ± 5%.
PPH
IL
IH
10/45
M28W320EBT, M28W320EBB
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time, to monitor
the progress of an operation, or the Program/
Erase states. See Table 3, Command Codes, for
a summary of the commands and see Appendix D,
Table 29, Write State Machine Current/Next, for a
summary of the Command Interface.
Table 3. Command Codes
Hex Code
10h
Command
Program
Erase
20h
30h
Double Word Program
Program
40h
50h
Clear Status Register
Reserved
55h
56h
Quadruple Word Program
Read Status Register
Read Electronic Signature
Read CFI Query
The Command Interface is reset to Read mode
when power is first applied, when exiting from Re-
70h
set or whenever V
is lower than V
. Com-
DD
LKO
90h
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to Read mode. Refer to Table 4, Commands,
in conjunction with the text descriptions below.
98h
B0h
D0h
FFh
Program/Erase Suspend
Program/Erase Resume
Read Memory Array
Read Memory Array command
The Read command returns the memory to its
Read mode. One Bus Write cycle is required to is-
sue the Read Memory Array command and return
the memory to Read mode. Subsequent read op-
erations will read the addressed location and out-
put the data. When a device Reset occurs, the
memory defaults to Read mode.
Read CFI Query Command
The Read Query Command is used to read data
from the Common Flash Interface (CFI) Memory
Area, allowing programming equipment or appli-
cations to automatically match their interface to
the characteristics of the device.
One Bus Write cycle is required to issue the Read
Query Command. Once the command is issued
subsequent Bus Read operations read from the
Common Flash Interface Memory Area. See Ap-
pendix B, Common Flash Interface, Tables 23, 24,
25, 26, 27 and 28 for details on the information
contained in the Common Flash Interface memory
area.
Read Status Register Command
The Status Register indicates when a program or
erase operation is complete and the success or
failure of the operation itself. Issue a Read Status
Register command to read the Status Register’s
contents. Subsequent Bus Read operations read
the Status Register, at any address, until another
command is issued. See Table 8, Status Register
Bits, for details on the definitions of the bits.
The Read Status Register command may be is-
sued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the con-
tent of the Status Register.
Block Erase Command
The Block Erase command can be used to erase
a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation will
abort, the data in the block will not be changed and
the Status Register will output the error.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer or the Device Code depending
on the levels of A0. The Manufacturer Code is out-
Two Bus Write cycles are required to issue the
command.
■ The first bus cycle sets up the Erase command.
■ The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
put when the address line A0 is at V , the Device
IL
Code is output when A0 is at V . Addresses A1-
IH
A7 must be kept to V , other addresses are ig-
IL
nored. The codes are output on DQ0-DQ7 with
DQ8-DQ15 at 00h. (see Table 5)
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
11/45
M28W320EBT, M28W320EBB
Erase aborts if Reset turns to V . As data integrity
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 17, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
IL
During Erase operations the memory will only ac-
cept the Read Status Register command and the
Program/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
given in Table 7, Program, Erase Times and Pro-
gram/Erase Endurance Cycles.
See Appendix C, Figure 20, Erase Flowchart and
Pseudo Code, for the flowchart for using the Erase
command.
Quadruple Word Program Command
This feature is offered to improve the programming
throughput, writing a page of four adjacent words
in parallel.The four words must differ only for the
addresses A0 and A1. Programming should not be
attempted when V is not at V
.
PP
PPH
Program Command
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
■ The first bus cycle sets up the Quadruple Word
The memory array can be programmed word-by-
word. Two bus write cycles are required to issue
the Program command.
Program Command.
■ The first bus cycle sets up the Program
■ The second bus cycle latches the Address and
command.
the Data of the first word to be written.
■ The second latches the Address and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will only
accept the Read Status Register command and
the Program/Erase Suspend command. All other
commands will be ignored. Typical Program times
are given in Table 7, Program, Erase Times and
Program/Erase Endurance Cycles.
■ The third bus cycle latches the Address and the
Data of the second word to be written.
■ The fourth bus cycle latches the Address and
the Data of the third word to be written.
■ The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
Programming aborts if Reset goes to V . As data
IL
ming aborts if Reset goes to V . As data integrity
IL
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 16, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 18, Quadruple Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Quadruple Word Program
command.
Double Word Program Command
Clear Status Register Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
ed when V is not at V
.
PP
PPH
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Three bus write cycles are necessary to issue the
Double Word Program command.
■ The first bus cycle sets up the Double Word
Program command.
■ The second bus cycle latches the Address and
Program/Erase Suspend Command
the Data of the first word to be written.
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
■ The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V . As data integrity
IL
cannot be guaranteed when the program opera-
12/45
M28W320EBT, M28W320EBB
ditionally, if the suspend operation was Erase then
the Program, Double Word Program and Quadru-
ple Word Program commands will also be accept-
ed. Only the blocks not being erased may be read
or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 19, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 21, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Chip Enable to V . Program/Erase is aborted if
IH
Reset turns to V .
IL
Block Protection
See Appendix C, Figure 19, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
21, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Two parameter/lockable blocks (blocks #0 and #1)
can be protected against Program or Erase oper-
ations. Unprotected blocks can be programmed or
erased.
To protect the two lockable blocks set Write Pro-
Program/Erase Resume Command
tect to V . When V is below V all blocks are
IL
PP
PPLK
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
protected. Any attempt to Program or Erase pro-
tected blocks will abort, the data in the block will
not be changed and the Status Register outputs
the error.
Table 6, Memory Blocks Protection Truth Table,
defines the protection methods.
13/45
M28W320EBT, M28W320EBB
Table 4. Commands
Bus Write Operations
2nd Cycle
No. of
Cycles
1st Cycle
3nd Cycle
Commands
Bus
Op.
Bus
Bus
Op.
Addr Data
Addr Data
Op.
Addr Data
Read Memory Array
Write
Write
X
X
FFh
70h
RA
X
RD
Read
Read
Read Status
Register
SRD
Read Electronic
Signature
(2)
Write
X
90h
Read
IDh
SA
Read CFI Query
Erase
Write
Write
X
X
98h
20h
Read
Write
QA
BA
QD
D0h
40h or
10h
Program
Write
Write
X
X
Write
Write
PA
PD
Double Word
30h
PA1
PD1 Write
PA2
PA2
PD2
(3)
Program
Quadruple Word
(6)
Write
Write
Write
Write
X
X
X
X
Write
PA1
PD1 Write
PD2 Write
PA3
PD3 Write
56h
(4)
Program
Clear Status
Register
50h
B0h
D0h
Program/Erase
Suspend
Program/Erase
Resume
Note: 1. X = Don’t Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code),
QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Ad-
dress, PRD=Protection Register Data.
2. A0=V outputs Manufacturer code, A0=V outputs Device code. Address A7-A1 must be V .
IL
IH
IL
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. 55h is reserved.
6. To be characterized.
Table 5. Read Electronic Signature
Code
Device
E
G
W
A0
A1-A7
A8-A20
DQ0-DQ7
DQ8-DQ15
Manufacture.
Code
V
IL
V
IL
V
V
IL
V
IL
Don’t Care
20h
00h
IH
V
V
V
V
V
V
V
V
M28W320EBT
M28W320EBB
Don’t Care
Don’t Care
BCh
BDh
88h
88h
IL
IL
IH
IH
IH
IL
Device Code
V
V
IL
IL
IL
IH
Note:
RP = V .
IH
14/45
M28W320EBT, M28W320EBB
Table 6. Memory Blocks Protection Truth Table
Lockable Blocks
(blocks #0 and #1)
(1)
(1)
Other Blocks
V
PP
RP
WP
V
X
V
X
X
Protected
Protected
Protected
IL
V
Protected
IL
IH
(2)
(2)
V
V
Protected
Unprotected
V
V
or V
or V
IH
IL
DD
PPH
V
V
IH
Unprotected
Unprotected
IH
DD
PPH
Note: 1. X = Don’t Care
2. V must also be greater than the Program Voltage Lock Out V
.
PPLK
PP
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
M28W320EB
Parameter
Word Program
Test Conditions
Unit
Min
Typ
10
Max
V
= V
DD
200
200
200
5
µs
PP
V
V
V
= 12V ±5%
= 12V ±5%
= 12V ±5%
= V
Double Word Program
10
µs
PP
Quadruple Word Program
10
µs
PP
(1)
s
PP
0.16/0.08
Main Block Program
Parameter Block Program
Main Block Erase
V
0.32
5
s
PP
DD
(1)
V
V
V
= 12V ±5%
= V
4
s
PP
0.02/0.01
V
0.04
1
4
s
PP
DD
= 12V ±5%
= V
10
10
10
10
s
PP
V
1
s
PP
DD
= 12V ±5%
= V
0.4
0.4
s
s
PP
Parameter Block Erase
V
PP
DD
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
15/45
M28W320EBT, M28W320EBB
STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read Status Register command can be issued, re-
fer to the Read Status Register Command section.
To output the contents, the Status Register is
latched on the falling edge of the Chip Enable or
Output Enable signals, and can be read until Chip
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum num-
ber of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Sta-
tus bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Enable or Output Enable returns to V . Either
IH
Chip Enable or Output Enable must be toggled to
update the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
The bits in the Status Register are summarized in
Table 8, Status Register Bits. Refer to Table 8 in
conjunction with the following text descriptions.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the byte and still failed to ver-
ify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new command is issued, otherwise the new
command will appear to fail.
Program/Erase Controller Status (Bit 7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to ‘1’), the Pro-
gram/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High .
V
Status (Bit 3). The V
Status bit can be
PP
PP
used to identify an invalid voltage on the V pin
PP
during Program and Erase operations. The V
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
PP
During Program, Erase, operations the Program/
Erase Controller Status bit can be polled to find the
end of the operation. Other bits in the Status Reg-
ister should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
cur if V becomes invalid during an operation.
PP
When the V Status bit is Low (set to ‘0’), the volt-
PP
age on the V pin was sampled at a valid voltage;
PP
when the V Status bit is High (set to ‘1’), the V
PP
PP
After the Program/Erase Controller completes its
pin has a voltage that is below the V
Lockout
PP
operation the Erase Status, Program Status, V
PP
Voltage, V
, the memory is protected and Pro-
PPLK
Status and Block Protection Status bits should be
tested for errors.
gram and Erase operations cannot be performed.
Once set High, the V Status bit can only be reset
PP
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit (set to ‘1’) indicates that an Erase
operation has been suspended or is going to be
suspended.
Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Suspend Status (Bit 2). The Program
Suspend Status bit (set to ‘1’) indicates that a Pro-
gram operation has been suspended or is going to
be suspended.
The Program Suspend Status should only be con-
sidered valid when the Program/Erase Controller
Status bit is High (Program/Erase Controller inac-
tive). Bit 2 is set within 5µs of the Program/Erase
Suspend command being issued therefore the
The Erase Suspend Status should only be consid-
ered valid when the Program/Erase Controller Sta-
tus bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Sus-
pend command being issued therefore the memo-
ry may still complete the operation rather than
entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
memory may still complete the operation rather
16/45
than
entering
the
Suspend
mode.
M28W320EBT, M28W320EBB
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a protected block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
tempted on a protected block.
Table 8. Status Register Bits
Bit
Name
Logic Level
Definition
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
Ready
7
P/E.C. Status
Busy
Suspended
6
5
4
3
2
Erase Suspend Status
Erase Status
In progress or Completed
Erase Error
Erase Success
Program Error
Program Status
Program Success
V
V
Invalid, Abort
OK
PP
PP
V
PP
Status
Suspended
Program Suspend Status
In Progress or Completed
Program/Erase on protected Block, Abort
No operation to protected blocks
1
0
Block Protection Status
Reserved
Note: Logic level ’1’ is High, ’0’ is Low.
17/45
M28W320EBT, M28W320EBB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 9. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
–40
–40
–55
–0.6
–0.6
–0.6
Max
85
(1)
T
°C
°C
°C
V
A
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
T
125
155
BIAS
T
STG
V
IO
V
+0.6
DDQ
V
, V
DD DDQ
4.1
13
V
V
PP
Program Voltage
V
Note: 1. Depends on range.
18/45
M28W320EBT, M28W320EBB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 10,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 10. Operating and AC Measurement Conditions
M28W320EBT, M28W320EBB
70
85
90
100
Parameter
Supply Voltage
Units
Min
Max
Min
Max
Min
Max
Min
Max
V
V
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
V
V
DD
2.7
3.6
85
2.7
3.6
85
2.7
3.6
85
1.65
– 40
3.6
85
Supply Voltage (V
≤ V
)
DDQ
DDQ
DD
Ambient Operating Temperature
– 40
– 40
– 40
°C
pF
ns
V
Load Capacitance (C )
50
50
50
50
L
Input Rise and Fall Times
Input Pulse Voltages
5
5
5
5
0 to V
0 to V
0 to V
0 to V
DDQ
DDQ
DDQ
DDQ
Input and Output Timing Ref.
Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
V
DDQ
V
DDQ
V
/2
DDQ
V
DDQ
V
0V
DD
25kΩ
AI00610
DEVICE
UNDER
TEST
C
L
25kΩ
0.1µF
0.1µF
C
includes JIG capacitance
AI00609C
L
Table 11. Device Capacitance
Symbol
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
6
Unit
pF
C
V
= 0V
= 0V
IN
IN
C
OUT
V
OUT
12
pF
Note: Sampled only, not 100% tested.
19/45
M28W320EBT, M28W320EBB
Table 12. DC Characteristics
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Test Condition
Min
Typ
Max
±1
Unit
µA
I
0V≤ V ≤ V
LI
IN
DDQ
I
0V≤ V
≤V
±10
18
µA
LO
OUT DDQ
I
E = V , G = V , f = 5MHz
9
mA
DD
SS
IH
E = V
RP = V
± 0.2V,
Supply Current (Stand-by or
Automatic Stand-by)
DDQ
I
15
50
50
10
20
20
20
50
400
µA
µA
DD1
± 0.2V
DDQ
Supply Current
(Reset)
I
RP = V ± 0.2V
15
5
DD2
SS
Program in progress
mA
mA
mA
mA
µA
V
PP
= 12V ± 5%
I
Supply Current (Program)
Supply Current (Erase)
DD3
Program in progress
= V
10
5
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
DD4
Erase in progress
= V
10
15
V
PP
DD
E = V
Erase suspended
± 0.2V,
Supply Current
(Program/Erase Suspend)
DDQ
I
DD5
Program Current
(Read or Stand-by)
I
V
> V
µA
PP
PP
PP
DD
Program Current
(Read or Stand-by)
I
V
≤ V
1
1
1
5
5
µA
µA
PP1
DD
I
RP = V ± 0.2V
Program Current (Reset)
PP2
SS
Program in progress
10
mA
V
PP
= 12V ± 5%
I
Program Current (Program)
PP3
Program in progress
= V
1
3
1
5
10
5
µA
mA
µA
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
Program Current (Erase)
PP4
Erase in progress
= V
V
PP
DD
–0.5
–0.5
0.4
0.8
V
V
V
V
V
Input Low Voltage
Input High Voltage
IL
V
V
≥ 2.7V
≥ 2.7V
DDQ
DDQ
V
–0.4
V
V
+0.4
DDQ
DDQ
V
IH
0.7 V
+0.4
DDQ
DDQ
I
= 100µA, V = V min,
DD DD
OL
V
Output Low Voltage
Output High Voltage
0.1
V
V
V
OL
V
= V
min
DDQ
DDQ
I
= –100µA, V = V min,
DD DD
OH
V
OH
V
–0.1
DDQ
V
DDQ
= V
min
DDQ
Program Voltage (Program or
Erase operations)
V
1.65
3.6
PP1
Program Voltage
(Program or Erase
operations)
V
PPH
11.4
12.6
V
Program Voltage
(Program and Erase lock-out)
V
1
2
V
V
PPLK
V
DD
Supply Voltage (Program
V
LKO
and Erase lock-out)
20/45
M28W320EBT, M28W320EBB
Figure 8. Read AC Waveforms
tAVAV
VALID
A0-A20
E
tAVQV
tAXQX
tELQV
tELQX
tEHQX
tEHQZ
G
tGLQV
tGHQX
tGHQZ
tGLQX
VALID
DQ0-DQ15
OUTPUTS
ENABLED
ADDR. VALID
CHIP ENABLE
DATA VALID
STANDBY
AI03825b
Table 13. Read AC Characteristics
M28W320EB
Unit
Symbol
Alt
Parameter
70
70
70
85
85
85
90
90
90
10
t
t
Address Valid to Next Address Valid
Address Valid to Output Valid
Min
100
100
ns
ns
AVAV
RC
t
t
ACC
Max
AVQV
(1)
t
Address Transition to Output Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Min
Min
Max
Max
Min
Min
Max
Max
Min
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
OH
AXQX
EHQX
(1)
(1)
(2)
(1)
(1)
(1)
(2)
(1)
t
t
OH
t
20
70
0
20
85
0
25
90
0
30
100
0
t
HZ
EHQZ
t
Chip Enable Low to Output Valid
t
t
CE
ELQV
t
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
LZ
ELQX
t
0
0
0
0
t
t
OH
GHQX
t
20
20
0
20
20
0
25
30
0
30
35
0
DF
GHQZ
t
t
t
OE
GLQV
GLQX
t
OLZ
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
- t
after the falling edge of E without increasing t
.
ELQV
ELQV GLQV
21/45
M28W320EBT, M28W320EBB
Figure 9. Write AC Waveforms, Write Enable Controlled
22/45
M28W320EBT, M28W320EBB
Table 14. Write AC Characteristics, Write Enable Controlled
M28W320EB
Unit
Symbol
Alt
Parameter
70
70
45
45
0
85
85
45
45
0
90
90
50
50
0
10
100
50
t
t
WC
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
t
t
Address Valid to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Chip Enable Low to Output Valid
AVWH
AS
DS
CS
t
t
t
50
DVWH
t
0
ELWL
t
70
85
90
100
ELQV
(1,2)
Output Valid to V Low
0
0
0
0
0
0
0
0
t
PP
QVVPL
t
Output Valid to Write Protect Low
QVWPL
(1)
t
V
High to Write Enable High
PP
200
0
200
0
200
0
200
0
t
VPS
VPHWH
t
t
t
Write Enable High to Address Transition
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Chip Enable Low
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Protect High to Write Enable High
WHAX
WHDX
WHEH
AH
t
t
0
0
0
0
DH
CH
t
0
0
0
0
t
25
20
25
45
45
25
20
25
45
45
30
30
30
50
50
30
30
30
50
50
WHEL
t
WHGL
WHWL
t
t
WPH
t
t
WLWH
WP
t
WPHWH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 3.6V).
PP
PP
23/45
M28W320EBT, M28W320EBB
Figure 10. Write AC Waveforms, Chip Enable Controlled
24/45
M28W320EBT, M28W320EBB
Table 15. Write AC Characteristics, Chip Enable Controlled
M28W320EB
Unit
Symbol
Alt
Parameter
70
70
45
45
0
85
85
45
45
0
90
90
50
50
0
10
100
50
50
0
t
t
WC
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
t
t
Address Valid to Chip Enable High
Data Valid to Chip Enable High
AVEH
AS
DS
AH
t
t
t
t
DVEH
t
Chip Enable High to Address Transition
Chip Enable High to Data Transition
Chip Enable High to Chip Enable Low
Chip Enable High to Output Enable Low
Chip Enable High to Write Enable High
Chip Enable Low to Chip Enable High
Chip Enable Low to Output Valid
EHAX
t
0
0
0
0
EHDX
DH
t
t
CPH
25
25
0
25
25
0
30
30
0
30
30
0
EHEL
t
EHGL
t
t
WH
EHWH
t
t
CP
45
70
45
85
50
90
50
100
ELEH
t
ELQV
(1,2)
Output Valid to V Low
Min
Min
Min
Min
Min
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
t
PP
QVVPL
t
Data Valid to Write Protect Low
QVWPL
(1)
t
V
PP
High to Chip Enable High
200
0
200
0
200
0
200
0
t
VPS
VPHEH
t
t
CS
Write Enable Low to Chip Enable Low
Write Protect High to Chip Enable High
WLEL
t
45
45
50
50
WPHEH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 3.6V).
PP
PP
25/45
M28W320EBT, M28W320EBB
Figure 11. Power-Up and Reset AC Waveforms
W, E, G
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
RP
tVDHPH
tPLPH
Reset
VDD, VDDQ
Power-Up
AI03453b
Table 16. Power-Up and Reset AC Characteristics
M28W320EB
Symbol
Parameter
Test Condition
Unit
70
85
90
10
During
Program
and Erase
t
t
t
PHWL
Min
50
50
50
50
µs
Reset High to Write Enable Low, Chip
Enable Low, Output Enable Low
PHEL
PHGL
others
Min
Min
30
30
30
30
ns
ns
(1,2)
(3)
Reset Low to Reset High
100
100
100
100
t
t
PLPH
Supply Voltages High to Reset High
Min
50
50
50
50
µs
VDHPH
Note: 1. The device Reset is possible but not guaranteed if t
2. Sampled only, not 100% tested.
< 100ns.
PLPH
3. It is important to assert RP in order to allow proper CPU initialization during power up or reset.
26/45
M28W320EBT, M28W320EBB
PACKAGE MECHANICAL
Figure 12. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
D
A
CP
DIE
C
TSOP-a
Note: Drawing is not to scale.
A1
α
L
Table 17. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
mm
inches
Symbol
Typ
Min
Max
1.20
0.15
1.05
0.27
0.21
20.20
18.50
12.10
–
Typ
Min
Max
0.0472
0.0059
0.0413
0.0106
0.0083
0.7953
0.7283
0.4764
–
A
A1
A2
B
0.05
0.95
0.17
0.10
19.80
18.30
11.90
–
0.0020
0.0374
0.0067
0.0039
0.7795
0.7205
0.4685
–
C
D
D1
E
e
0.50
0.0197
L
0.50
0°
0.70
5°
0.0197
0°
0.0279
5°
α
N
48
48
CP
0.10
0.0039
27/45
M28W320EBT, M28W320EBB
Figure 13. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline
D
D1
FD
FE
SD
SE
E
E1
e
ddd
BALL "A1"
A
e
b
A2
A1
BGA-Z35
Note: Drawing is not to scale.
Table 18. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
1.200
0.0472
0.200
0.0079
1.000
0.0394
0.400
6.390
5.250
0.350
6.290
–
0.450
0.0157
0.2516
0.2067
0.0138
0.2476
–
0.0177
D
6.490
0.2555
D1
ddd
E
–
–
0.100
0.0039
6.370
3.750
0.750
0.570
1.310
0.375
0.375
6.270
6.470
0.2508
0.1476
0.0295
0.0224
0.0516
0.0148
0.0148
0.2469
0.2547
E1
e
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
FD
FE
SD
SE
28/45
M28W320EBT, M28W320EBB
Figure 14. TFBGA47 Daisy Chain - Package Connections (Top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
AI03295
Figure 15. TFBGA47 Daisy Chain - PCB Connections proposal (Top view through package)
1
2
3
4
5
6
7
8
START
POINT
A
B
C
D
E
F
END
POINT
AI03296
29/45
M28W320EBT, M28W320EBB
PART NUMBERING
Table 19. Ordering Information Scheme
Example:
M28W320EBT
90
N
6
T
Device Type
M28
Operating Voltage
W = V = 2.7V to 3.6V; V
= 1.65V to 3.6V
DDQ
DD
Device Function
320EB = 32 Mbit (x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70 ns
85 = 85 ns
90 = 90 ns
10 = 100 ns
Package
N = TSOP48: 12 x 20 mm
ZB = TFBGA47: 6.39 x 6.37mm, 0.75 mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
T = Tape & Reel Packing
Table 20. Daisy Chain Ordering Scheme
Example:
M28W320EB
-ZB T
Device Type
M28W320EB
Daisy Chain
-ZB = TFBGA47: 6.39 x 6.37mm, 0.75 mm pitch
Option
T = Tape & Reel Packing
Note:Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available
options (Speed, Package, etc...) or for further information on any aspect of this device, please contact
the ST Sales Office nearest to you.
30/45
M28W320EBT, M28W320EBB
APPENDIX A. BLOCK ADDRESS TABLES
Table 21. Top Boot Block Addresses,
M28W320EBT
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
120000-127FFF
118000-11FFFF
110000-117FFF
108000-10FFFF
100000-107FFF
0F8000-0FFFFF
0F00000-F7FFF
0E8000-0EFFFF
0E0000-0E7FFF
0D8000-0DFFFF
0D0000-0D7FFF
0C8000-0CFFFF
0C0000-0C7FFF
0B8000-0BFFFF
0B0000-0B7FFF
0A8000-0AFFFF
0A0000-0A7FFF
098000-09FFFF
090000-097FFF
088000-08FFFF
080000-087FFF
078000-07FFFF
070000-077FFF
068000-06FFFF
060000-067FFF
058000-05FFFF
050000-057FFF
048000-04FFFF
040000-047FFF
038000-03FFFF
030000-037FFF
028000-02FFFF
020000-027FFF
018000-01FFFF
010000-017FFF
008000-00FFFF
000000-007FFF
Size
(KWord)
#
Address Range
0
4
1FF000-1FFFFF
1FE000-1FEFFF
1FD000-1FDFFF
1FC000-1FCFFF
1FB000-1FBFFF
1FA000-1FAFFF
1F9000-1F9FFF
1F8000-1F8FFF
1F0000-1F7FFF
1E8000-1EFFFF
1E0000-1E7FFF
1D8000-1DFFFF
1D0000-1D7FFF
1C8000-1CFFFF
1C0000-1C7FFF
1B8000-1BFFFF
1B0000-1B7FFF
1A8000-1AFFFF
1A0000-1A7FFF
198000-19FFFF
190000-197FFF
188000-18FFFF
180000-187FFF
178000-17FFFF
170000-177FFF
168000-16FFFF
160000-167FFF
158000-15FFFF
150000-157FFF
148000-14FFFF
140000-147FFF
138000-13FFFF
130000-137FFF
128000-12FFFF
1
4
2
4
3
4
4
4
5
4
6
4
7
4
8
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
31/45
M28W320EBT, M28W320EBB
Table 22. Bottom Boot Block Addresses,
M28W320EBB
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
0E8000-0EFFFF
0E0000-0E7FFF
0D8000-0DFFFF
0D0000-0D7FFF
0C8000-0CFFFF
0C0000-0C7FFF
0B8000-0BFFFF
0B0000-0B7FFF
0A8000-0AFFFF
0A0000-0A7FFF
098000-09FFFF
090000-097FFF
088000-08FFFF
080000-087FFF
078000-07FFFF
070000-077FFF
068000-06FFFF
060000-067FFF
058000-05FFFF
050000-057FFF
048000-04FFFF
040000-047FFF
038000-03FFFF
030000-037FFF
028000-02FFFF
020000-027FFF
018000-01FFFF
010000-017FFF
008000-00FFFF
007000-007FFF
006000-006FFF
005000-005FFF
004000-004FFF
003000-003FFF
002000-002FFF
001000-001FFF
000000-000FFF
Size
#
Address Range
(KWord)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
1F8000-1FFFFF
1F0000-1F7FFF
1E8000-1EFFFF
1E0000-1E7FFF
1D8000-1DFFFF
1D0000-1D7FFF
1C8000-1CFFFF
1C0000-1C7FFF
1B8000-1BFFFF
1B0000-1B7FFF
1A8000-1AFFFF
1A0000-1A7FFF
198000-19FFFF
190000-197FFF
188000-18FFFF
180000-187FFF
178000-17FFFF
170000-177FFF
168000-16FFFF
160000-167FFF
158000-15FFFF
150000-157FFF
148000-14FFFF
140000-147FFF
138000-13FFFF
130000-137FFF
128000-12FFFF
120000-127FFF
118000-11FFFF
110000-117FFF
108000-10FFFF
100000-107FFF
0F8000-0FFFFF
0F0000-0F7FFF
8
7
6
4
5
4
4
4
3
4
2
4
1
4
0
4
32/45
M28W320EBT, M28W320EBB
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
structure is read from the memory. Tables 23, 24,
25, 26, 27 and 28 show the addresses used to re-
trieve the data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 28, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
Table 23. Query Structure Overview
Offset
00h
Sub-section Name
Description
Reserved for algorithm-specific information
Command set ID and algorithm data offset
Device timing & voltage information
Flash device layout
Reserved
10h
CFI Query Identification String
System Interface Information
Device Geometry Definition
1Bh
27h
Additional information specific to the Primary
Algorithm (optional)
P
A
Primary Algorithm-specific Extended Query table
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Note: Query data are always presented on the lowest order data outputs.
Table 24. CFI Query Identification String
Offset
Data
Description
Value
00h
0020h
Manufacturer Code
Device Code
Reserved
ST
88BCh
88BDh
Top
Bottom
01h
02h-0Fh
10h
reserved
0051h
0052h
0059h
0003h
0000h
Query Unique ASCII String "QRY"
Query Unique ASCII String "QRY"
Query Unique ASCII String "QRY"
“Q”
“R”
“Y”
11h
12h
13h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID
code defining a specific algorithm
Intel
Compatible
14h
offset = P =
0035h
15h
Address for Primary Algorithm extended Query table
P=35h
NA
16h
17h
18h
0000h
0000h
0000h
Alternate Vendor Command Set and Control Interface ID Code second
vendor - specified algorithm supported (note: 0000h means none exists)
value = A =
0000h
19h
Address for Alternate Algorithm extended Query table
note: 0000h means none exists
NA
1Ah
0000h
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
33/45
M28W320EBT, M28W320EBB
Table 25. CFI Query System Interface Information
Offset
Data
Description
Value
V
DD
V
DD
V
PP
V
PP
Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
2.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
1Ch
1Dh
1Eh
0036h
00B4h
00C6h
3.6V
11.4V
12.6V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
0000h
0005h
0005h
0003h
0000h
16µs
16µs
1 s
Typical timeout per single word program = 2 µs
n
Typical timeout for Double/ Quadruple Word Program = 2 µs
n
Typical timeout per individual block erase = 2 ms
n
NA
Typical timeout for full chip erase = 2 ms
n
512µs
512µs
8 s
Maximum timeout for word program = 2 times typical
n
Maximum timeout for Double/ Quadruple Word Program = 2 times typical
n
Maximum timeout per individual block erase = 2 times typical
n
NA
Maximum timeout for chip erase = 2 times typical
34/45
M28W320EBT, M28W320EBB
Table 26. Device Geometry Definition
Offset Word
Data
Description
Value
Mode
n
27h
0016h
4MByte
Device Size = 2 in number of bytes
28h
29h
0001h
0000h
x16
Async
Flash Device Interface Code description
2Ah
2Bh
0003h
0000h
n
8
2
Maximum number of bytes in multi-byte program or page = 2
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Dh
2Eh
003Eh
0000h
Region 1 Information
Number of identical-size erase block = 003Eh+1
63
64KByte
8
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8KByte
8
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8KByte
63
31h
32h
003Eh
0000h
Region 2 Information
Number of identical-size erase block = 003Eh+1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64KByte
35/45
M28W320EBT, M28W320EBB
Table 27. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(1)
P = 35h
(P+0)h = 35h
(P+1)h = 36h
(P+2)h = 37h
(P+3)h = 38h
(P+4)h = 39h
(P+5)h = 3Ah
(P+6)h = 3Bh
(P+7)h = 3Ch
(P+8)h = 3Dh
0050h
0052h
0049h
0031h
0030h
0006h
0000h
0000h
0000h
"P"
"R"
"I"
Primary Algorithm extended Query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
"1"
"0"
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
bit 1
bit 2
bit 3
bit 4
Chip Erase supported
Erase Suspend supported
Program Suspend
Lock/Unlock supported
Queued Erase supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
No
Yes
Yes
No
No
bit 31 to 5 Reserved; undefined bits are ‘0’
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
bit 7 to 1
Program supported after Erase Suspend (1 = Yes, 0 = No)
Reserved; undefined bits are ‘0’
Yes
NA
(P+A)h = 3Fh
(P+B)h = 40h
0000h
0000h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0 Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
(P+C)h = 41h
(P+D)h = 42h
(P+E)h
0030h
00C0h
0000h
V
V
Logic Supply Optimum Program/Erase voltage (highest performance)
3V
DD
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Supply Optimum Program/Erase voltage
12V
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Reserved
Note: 1. See Table 24, offset 15h for P pointer definition.
Table 28. Security Code Area
Offset
81h
Data
XXXX
XXXX
XXXX
XXXX
Description
82h
64 bits unique device number.
83h
84h
36/45
M28W320EBT, M28W320EBB
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 16. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0x40) ;
Write 40h or 10h
/*or writeToFlash (any_address, 0x10) ; */
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
} while (status_register.b7== 0) ;
YES
NO
NO
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
Program
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03538b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
37/45
M28W320EBT, M28W320EBB
Figure 17. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 1
& Data 1 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03539b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
38/45
M28W320EBT, M28W320EBB
Figure 18. Quadruple Word Program Flowchart and Pseudo Code
Start
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
Write 56h
Write Address 1
& Data 1 (3)
writeToFlash (any_address, 0x56) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 2
& Data 2 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
Write Address 3
& Data 3 (3)
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
Write Address 4
& Data 4 (3)
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI06233
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
39/45
M28W320EBT, M28W320EBB
Figure 19. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
Write 70h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
program has already completed */
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
b2 = 1
YES
Program Complete
if (status_register.b2==0) /*program completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
}
Read data from
another address
else
{ writeToFlash (any_address, 0xFF) ;
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
Write FFh
Read Data
}
}
Program Continues
AI03540b
40/45
M28W320EBT, M28W320EBB
Figure 20. Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (any_address, 0x20) ;
Write 20h
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
} while (status_register.b7== 0) ;
YES
NO
YES
NO
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
Error (1)
b3 = 0
YES
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
Command
Sequence Error (1)
b4, b5 = 1
NO
error_handler ( ) ;
if ( (status_register.b5==1) )
/* erase error */
b5 = 0
YES
Erase Error (1)
error_handler ( ) ;
Erase to Protected
Block Error (1)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03541b
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
41/45
M28W320EBT, M28W320EBB
Figure 21. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
erase_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
Write 70h
Read Status
Register
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
if (status_register.b6==0) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
b6 = 1
YES
Erase Complete
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
Read data from
another block
or
Program
}
else
{ writeToFlash (any_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
Write D0h
Write FFh
Read Data
}
Erase Continues
}
AI03549b
42/45
M28W320EBT, M28W320EBB
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE
Table 29. Write State Machine Current/Next
Command Input (and Next State)
Data
When
Read
Program/ Program/
Erase
Current
State
SR
bit 7
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Setup
(20h)
Read
Status
(70h)
Clear
Status
(50h)
Read
Elect.Sg.
(90h)
Erase
Erase
Confirm
(D0h)
Suspend Resume
(B0h)
(D0h)
Read
Array
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
“1”
“1”
“1”
“1”
Array
Read Array
Read
Status
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
Status
Read Array
Read Array
Read
Elect.Sg.
Electronic
Signature
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
Program
Setup
Status
Program (Command input = Data to be Programmed)
Program
Suspend
to Read
Status
Program
(continue)
“0”
“1”
“1”
“1”
Status
Program (continue)
Program (continue)
Program
Suspend
to Read
Status
Program
Suspend
to Read
Array
Program
Program Program Program
Program Suspend to
Read Array
Program Suspend Program Suspend Suspend Suspend
(continue) to Read (continue) to Read
Status
Array
to Read
Array
to Read
Elect.Sg.
Array
Status
Program
Suspend
to Read
Array
Program
Suspend
to Read
Array
Program
Program Program Program
Program Suspend to
Read Array
Program Suspend Program Suspend Suspend Suspend
(continue) to Read (continue) to Read
to Read
Array
to Read
Elect.Sg.
Array
Status
Program
Suspend
to Read
Elect.Sg.
Program
Program
Program Program Program
Electronic Suspend
Signature
Program Suspend to
Read Array
Program Suspend Program Suspend Suspend Suspend
(continue) to Read (continue) to Read
to Read
Array
to Read
Array
to Read
Elect.Sg.
Array
Status
Program
(complete)
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
“1”
“1”
Status
Read Array
Erase
Command
Error
Erase
Setup
Erase
(continue)
Erase
(continue)
Status
Erase Command Error
Erase Command Error
Erase
Cmd.
Error
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
“0”
“1”
Status
Status
Read Array
Erase
Suspend
to Read
Status
Erase
(continue)
Erase (continue)
Erase
Erase (continue)
Erase
Suspend
to Read
Status
Erase
Suspend Program
to Read
Array
Erase
Suspend
Erase
Erase
Erase
Suspend
Erase
Erase
Suspend Suspend Suspend
“1”
“1”
Status
Array
Setup
to Read (continue) to Read (continue) to Read
Array
to Read
Array
to Read
Elect.Sg.
Array
Status
Erase
Suspend
to Read
Array
Erase
Suspend Program
to Read
Array
Erase
Suspend
Erase
Suspend
Erase
Erase
Erase
Erase
Erase
Suspend Suspend Suspend
Setup
to Read (continue) to Read (continue) to Read
Array
to Read
Array
to Read
Elect.Sg.
Array
Status
Erase
Erase
Erase
Erase
Erase
Erase
Erase
Suspend
to Read
Elect.Sg.
Electronic Suspend Program
Suspend
Erase
Suspend
Erase
Suspend Suspend Suspend
“1”
“1”
Signature
to Read
Array
Setup
to Read (continue) to Read (continue) to Read
Array
to Read
Array
to Read
Elect.Sg.
Array
Status
Erase
(complete)
Read
Array
Program
Setup
Erase
Setup
Read
Status
Read
Array
Read
Elect.Sg.
Status
Read Array
Note: Elect.Sg. = Electronic Signature.
43/45
M28W320EBT, M28W320EBB
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
10-Sep-2001
-01
First Issue
Maximum changed to 3.3V
V
DDQ
06-Nov-2001
17-Jun-2002
-02
-03
Commands Table, Read CFI Query Address on 1st cycle changed to ‘X’ (Table 4)
Quadruple Word Program command added, V Maximum changed to 3.6V, TFBGA
package dimensions added to description. Corrections to Program and Erase times Table
7, DC Characteristics Table 12 and CFI Tables 25 and 26. Command Codes Table added.
DDQ
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 03 equals 3.0).
3-Oct-2002
3.1
Revision History moved to end of document.
“Double Word Program Command” and “Quadruple Word Program Command” clarified.
44/45
M28W320EBT, M28W320EBB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2002 STMicroelectronics - All Rights Reserved
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