M28W320ECT70N1F [STMICROELECTRONICS]
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory; 32兆位（2MB X16 ，引导块） 3V供应闪存
| 型号： | M28W320ECT70N1F |
| 厂家： | 
ST |
| 描述： | 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory |
| 文件： | 总53页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M28W320ECT
M28W320ECB
32 Mbit (2Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
Figure 1. Packages
– V = 2.7V to 3.6V Core Power Supply
DD
– V
= 1.65V to 3.6V for Input/Output
DDQ
– V = 12V for fast Program (optional)
PP
FBGA
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME:
– 10µs typical
TFBGA47 (ZB)
6.39 x 6.37mm
– Double Word Programming Option
– Quadruple Word Programming Option
■ COMMON FLASH INTERFACE
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
TSOP48 (N)
12 x 20mm
■ SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W320ECT: 88BAh
– Bottom Device Code, M28W320ECB: 88BBh
April 2003
1/53
M28W320ECT, M28W320ECB
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. TFBGA Connections (Top view through package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 6. Protection Register Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Address Inputs (A0-A20). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
V
V
V
V
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DD
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DDQ
Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
PP
SS
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 2. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Memory Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 3. Command Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/53
M28W320ECT, M28W320ECB
Block Lock-Down Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 6. Read Block Lock Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 7. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 8. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 16
BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Lock-Down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 9. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 10. Protection Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Program/Erase Controller Status (Bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Erase Suspend Status (Bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Erase Status (Bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Program Status (Bit 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
V
Status (Bit 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
PP
Program Suspend Status (Bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Block Protection Status (Bit 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Reserved (Bit 0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 11. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 12. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 13. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 8. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 14. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 15. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 16. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 10. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 18. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 12. Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 19. Power-Up and Reset AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3/53
M28W320ECT, M28W320ECB
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . . . 30
Table 20. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 30
Figure 14. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline31
Table 21. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data . . . 31
Figure 15. TFBGA47 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 32
Figure 16. TFBGA47 Daisy Chain - PCB Connections proposal (Top view through package) . . . . 32
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 23. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 24. Top Boot Block Addresses, M28W320ECT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 25. Bottom Boot Block Addresses, M28W320ECB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 26. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 27. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 28. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 29. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 30. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 31. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 17. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 18. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 20. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 45
Figure 21. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 22. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 23. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE . . . . . . . 50
Table 32. Write State Machine Current/Next, sheet 1 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 33. Write State Machine Current/Next, sheet 2 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 34. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4/53
M28W320ECT, M28W320ECB
SUMMARY DESCRIPTION
The M28W320EC is a 32 Mbit (2 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at the block level and programmed in-system
on a Word-by-Word basis. These operations can
be performed using a single low voltage (2.7 to
The memory is offered in TSOP48 (10 X 20mm)
and TFBGA47 (6.39 x 6.37mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
3.6V) supply. V
down to 1.65V. An optional 12V V power supply
allows to drive the I/O pin
DDQ
Figure 2. Logic Diagram
PP
is provided to speed up customer programming.
V
V
V
DD DDQ PP
The device features an asymmetrical blocked ar-
chitecture. The M28W320EC has an array of 71
blocks: 8 Parameter Blocks of 4 KWord and 63
Main Blocks of 32 KWord. M28W320ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W320ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
The M28W320EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
21
16
A0-A20
DQ0-DQ15
W
E
M28W320ECT
M28W320ECB
G
RP
WP
V
SS
When V ≤ V
all blocks are protected against
PP
PPLK
AI05517
program or erase. All blocks are locked at Power
Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a Protection Register to in-
crease the protection of a system design. The Pro-
tection Register is divided into two segments, the
first is a 64 bit area which contains a unique device
number written by ST, while the second is a 128 bit
area, one-time-programmable by the user. The
user programmable segment can be permanently
protected. Figure 6, shows the Protection Register
Memory Map.
Table 1. Signal Names
A0-A20
Address Inputs
DQ0-DQ15
Data Input/Output
Chip Enable
E
G
Output Enable
Write Enable
Reset
W
RP
WP
Write Protect
Core Power Supply
V
DD
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Power Supply for
Input/Output
V
DDQ
Optional Supply Voltage for
Fast Program & Erase
V
V
PP
Ground
SS
NC
Not Connected Internally
5/53
M28W320ECT, M28W320ECB
Figure 3. TSOP Connections
A15
1
48
A16
A14
A13
A12
A11
A10
A9
V
V
DDQ
SS
DQ15
DQ7
DQ14
DQ6
A8
DQ13
DQ5
NC
A20
W
DQ12
DQ4
RP
12
13
37
36
V
M28W320ECT
M28W320ECB
DD
V
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
PP
WP
A19
A18
A17
A7
A6
A5
A4
A3
V
E
SS
A2
A1
24
25
A0
AI05518
6/53
M28W320ECT, M28W320ECB
Figure 4. TFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
WP
A18
A20
DQ2
DQ3
A19
A17
A
B
C
D
E
F
A13
A14
A15
A16
A11
A10
A8
W
V
A7
A5
A4
A2
A1
A0
PP
RP
A12
A9
A6
A3
DQ11
DQ12
DQ4
DQ14
DQ15
DQ7
DQ5
DQ6
DQ13
DQ8
DQ9
DQ10
E
V
DQ0
DQ1
V
DDQ
SS
V
V
SS
DD
G
AI03847
7/53
M28W320ECT, M28W320ECB
Figure 5. Block Addresses
M28W320ECT
M28W320ECB
Top Boot Block Addresses
Bottom Boot Block Addresses
1FFFFF
4 KWords
1FF000
1FFFFF
32 KWords
32 KWords
1F8000
1F7FFF
Total of 8
4 KWord Blocks
1F0000
Total of 63
32 KWord Blocks
1F8FFF
4 KWords
1F8000
1F7FFF
32 KWords
1F0000
00FFFF
32 KWords
4 KWords
008000
007FFF
Total of 63
007000
32 KWord Blocks
Total of 8
00FFFF
4 KWord Blocks
32 KWords
008000
007FFF
000FFF
000000
32 KWords
4 KWords
000000
AI05519
Note: Also see Appendix A, Tables 24 and 25 for a full listing of the Block Addresses.
Figure 6. Protection Register Memory Map
PROTECTION REGISTER
8Ch
User Programmable OTP
85h
84h
Unique device number
81h
(1)
Protection Register Lock
2
1
0
80h
Note1. Bit 2 of the Protection Register Lock must not be programmed to 0.
AI05520
8/53
M28W320ECT, M28W320ECB
SIGNAL DESCRIPTIONS
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Write Bus
operation.
state. When Reset is at V , the device is in normal
IH
operation. Exiting reset mode the device enters
read array mode, but a negative transition of Chip
Enable or a change of the address is required to
ensure valid data outputs.
V
Supply Voltage. V
provides the power
DD
DD
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
V
Supply Voltage. V
provides the
power supply to the I/O pins and enables all Out-
puts to be powered independently from V . V
DDQ
DDQ
DD DDQ
can be tied to V
or can use a separate supply.
DD
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
V
Program Supply Voltage. V
is both a
PP
PP
control input and a power supply pin. The two
functions are selected by the voltage range ap-
plied to the pin. The Supply Voltage V
at V and Reset is at V the device is in active
and the
DD
IL
IH
mode. When Chip Enable is at V the memory is
Program Supply Voltage V
any order.
can be applied in
IH
PP
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
If V is kept in a low voltage range (0V to 3.6V)
PP
V
is seen as a control input. In this case a volt-
PP
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
age lower than V
against program or erase, while V
gives an absolute protection
PPLK
> V
en-
PP1
PP
ables these functions (see Table 15, DC Charac-
teristics for the relevant values). V is only
sampled at the beginning of a Program or Erase;
a change in its value after the operation has start-
ed does not have any effect on Program or Erase,
however for Double or Quadruple Word Program
the results are uncertain.
PP
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
If V is in the range 11.4V to 12.6V it acts as a
PP
power supply pin. In this condition V
stable until the Program/Erase algorithm is com-
pleted (see Table 17 and 18).
must be
PP
each block. When Write Protect is at V , the Lock-
IL
Down is enabled and the protection status of the
block cannot be changed. When Write Protect is at
V , the Lock-Down is disabled and the block can
be locked or unlocked. (refer to Table 7, Read Pro-
tection Register and Protection Register Lock).
V
Ground. V is the reference for all voltage
SS SS
IH
measurements.
Note: Each device in a system should have
Reset (RP). The Reset input provides a hard-
V
, V
and V decoupled with a 0.1µF ca-
DD DDQ PP
ware reset of the memory. When Reset is at V ,
pacitor close to the pin. See Figure 8, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required V
program and erase currents.
IL
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
mized. After Reset all blocks are in the Locked
PP
9/53
M28W320ECT, M28W320ECB
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby, Automatic Standby and Re-
set. See Table 2, Bus Operations, for a summary.
See Figures 10 and 11, Write AC Waveforms, and
Tables 17 and 18, Write AC Characteristics, for
details of the timing requirements.
Output Disable. The data outputs are high im-
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output En-
pedance when the Output Enable is at V .
IH
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable is at V and the device is in
IH
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
able must be at V in order to perform a read op-
IL
eration. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read de-
pends on the previous command written to the
memory (see Command Interface section). See
Figure 9, Read Mode AC Waveforms, and Table
16, Read AC Characteristics, for details of when
the output becomes valid.
V
during a program or erase operation, the de-
IH
vice enters Standby mode when finished.
Automatic Standby. Automatic Standby pro-
vides a low power consumption state during Read
mode. Following a read operation, the device en-
ters Automatic Standby after 150ns of bus inactiv-
ity even if Chip Enable is Low, V , and the supply
IL
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
current is reduced to I
puts will still output data if a bus Read operation is
in progress.
. The data Inputs/Out-
DD1
Reset. During Reset mode when Output Enable
is Low, V , the memory is deselected and the out-
IL
and Write Enable are at V with Output Enable at
V . Commands, Input Data and Addresses are
IH
puts are high impedance. The memory is in Reset
IL
mode when Reset is at V . The power consump-
IL
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
tion is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write En-
able inputs. If Reset is pulled to V during a Pro-
SS
gram or Erase, this operation is aborted and the
memory content is no longer valid.
Table 2. Bus Operations
V
Operation
Bus Read
E
G
W
RP
WP
X
DQ0-DQ15
Data Output
Data Input
Hi-Z
PP
V
V
V
IH
V
Don’t Care
V or V
DD
IL
IL
IL
IL
IH
IH
IH
V
V
V
V
V
V
V
V
Bus Write
Output Disable
Standby
X
IL
IH
PPH
V
X
Don’t Care
Don’t Care
Don’t Care
IH
IH
V
X
X
X
Hi-Z
IH
IH
V
IL
Reset
X
X
X
X
Hi-Z
Note: X = V or V , V = 12V ± 5%.
PPH
IL
IH
10/53
M28W320ECT, M28W320ECB
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time during, to
monitor the progress of the operation, or the Pro-
gram/Erase states. See Table 3, Command
Codes, for a summary of the commands and see
Appendix 22, Table 32, Write State Machine Cur-
rent/Next, for a summary of the Command Inter-
face.
Table 3. Command Codes
Hex Code
01h
Command
Block Lock confirm
10h
Program
20h
Erase
2Fh
Block Lock-Down confirm
30h
Double Word Program
Program
40h
50h
55h
56h
Clear Status Register
Reserved
The Command Interface is reset to Read mode
when power is first applied, when exiting from Re-
Quadruple Word Program
set or whenever V
is lower than V
. Com-
DD
LKO
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to Read mode. Refer to Table 4, Commands,
in conjunction with the text descriptions below.
Block Lock, Block Unlock, Block Lock-
Down
60h
70h
90h
98h
B0h
C0h
Read Status Register
Read Electronic Signature
Read CFI Query
Read Memory Array Command
The Read command returns the memory to its
Read mode. One Bus Write cycle is required to is-
sue the Read Memory Array command and return
the memory to Read mode. Subsequent read op-
erations will read the addressed location and out-
put the data. When a device Reset occurs, the
memory defaults to Read mode.
Program/Erase Suspend
Protection Register Program
Program/Erase Resume, Block Unlock
confirm
D0h
FFh
Read Status Register Command
Read Memory Array
The Status Register indicates when a program or
erase operation is complete and the success or
failure of the operation itself. Issue a Read Status
Register command to read the Status Register’s
contents. Subsequent Bus Read operations read
the Status Register at any address, until another
command is issued. See Table 11, Status Register
Bits, for details on the definitions of the bits.
The Read Status Register command may be is-
sued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the con-
tent of the Status Register.
Read CFI Query Command
The Read Query Command is used to read data
from the Common Flash Interface (CFI) Memory
Area, allowing programming equipment or appli-
cations to automatically match their interface to
the characteristics of the device. One Bus Write
cycle is required to issue the Read Query Com-
mand. Once the command is issued subsequent
Bus Read operations read from the Common
Flash Interface Memory Area. See Appendix B,
Common Flash Interface, Tables 26, 27, 28, 29,
30 and 31 for details on the information contained
in the Common Flash Interface memory area.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes and the Block
Locking Status, or the Protection Register.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer Code, the Device Code, the
Block Lock and Lock-Down Status, or the Protec-
tion and Lock Register. See Tables 5, 6 and 7 for
the valid address.
Block Erase Command
The Block Erase command can be used to erase
a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation will
abort, the data in the block will not be changed and
the Status Register will output the error.
Two Bus Write cycles are required to issue the
command.
■ The first bus cycle sets up the Erase command.
11/53
M28W320ECT, M28W320ECB
■ The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V . As data integrity
IL
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 18, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
Erase aborts if Reset turns to V . As data integrity
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
During Erase operations the memory will accept
the Read Status Register command and the Pro-
gram/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
given in Table 8, Program, Erase Times and Pro-
gram/Erase Endurance Cycles.
IL
Quadruple Word Program Command
This feature is offered to improve the programming
throughput, writing a page of four adjacent words
in parallel.The four words must differ only for the
addresses A0 and A1. Programming should not be
attempted when V is not at V
Five bus write cycles are necessary to issue the
Quadruple Word Program command.
.
PP
PPH
See Appendix C, Figure 21, Erase Flowchart and
Pseudo Code, for a suggested flowchart for using
the Erase command.
Program Command
■ The first bus cycle sets up the Quadruple Word
Program Command.
■ The second bus cycle latches the Address and
The memory array can be programmed word-by-
word. Two bus write cycles are required to issue
the Program Command.
the Data of the first word to be written.
■ The first bus cycle sets up the Program
■ The third bus cycle latches the Address and the
command.
Data of the second word to be written.
■ The second latches the Address and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will ac-
cept the Read Status Register command and the
Program/Erase Suspend command. Typical Pro-
gram times are given in Table 8, Program, Erase
Times and Program/Erase Endurance Cycles.
■ The fourth bus cycle latches the Address and
the Data of the third word to be written.
■ The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V . As data integrity
IL
Programming aborts if Reset goes to V . As data
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 19, Quadruple Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Quadruple Word Program
command.
IL
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 17, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Clear Status Register Command
Double Word Program Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
ed when V is not at V
.
PP
PPH
Three bus write cycles are necessary to issue the
Double Word Program command.
■ The first bus cycle sets up the Double Word
Program Command.
Program/Erase Suspend Command
■ The second bus cycle latches the Address and
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
the Data of the first word to be written.
■ The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
12/53
M28W320ECT, M28W320ECB
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program, Double Word Program, Quadruple
Word Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
Protection Register Memory Map). Attempting to
program a previously protected Protection Regis-
ter will result in a Status Register error. The pro-
tection of the Protection Register is not reversible.
The Protection Register Program cannot be sus-
pended.
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
■ The first bus cycle sets up the Block Lock
command.
Chip Enable to V . Program/Erase is aborted if
IH
■ The second Bus Write cycle latches the block
Reset turns to V .
IL
address.
See Appendix C, Figure 20, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 22, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Suspend com-
mand.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 10 shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 20, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 22, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Block Unlock Command
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to is-
sue the Blocks Unlock command.
■ The first bus cycle sets up the Block Unlock
command.
■ The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 10 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Protection Register Program Command
The Protection Register Program command is
used to Program the 128 bit user One-Time-Pro-
grammable (OTP) segment of the Protection Reg-
ister. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protec-
tion Register Program command.
■ The first bus cycle sets up the Protection
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP is
low, V . When WP is high, V the Lock-Down
IL
IH,
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Register Program command.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■ The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
■ The first bus cycle sets up the Block Lock
command.
■ The second Bus Write cycle latches the block
address.
The segment can be protected by programming bit
1 of the Protection Lock Register (see Figure 6,
13/53
M28W320ECT, M28W320ECB
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 10 shows the protection sta-
tus after issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation.
Table 4. Commands
Bus Write Operations
Commands
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op. Add Data Op. Add Data Op. Add Data Op. Add Data Op. Add Data
Read Memory
Array
1+ Write
1+ Write
X
X
X
FFh
RA
X
RD
SRD
IDh
Read
Read Status
Register
70h Read
90h Read
Read Electronic
Signature
(2)
1+ Write
1+ Write
SA
Read CFI Query
Erase
X
X
98h Read QA
20h Write BA
40h
QD
2
Write
D0h
Program
2
Write
X
X
or
10h
Write PA
PD
Double Word
3
Write
30h Write PA1 PD1 Write PA2 PD2
(3)
Program
Quadruple Word
(6)
5
1
1
1
Write
Write
Write
Write
X
X
X
X
Write PA1 PD1 Write PA2 PD2 Write PA3 PD3 Write PA4 PD4
56h
(4)
Program
Clear Status
Register
50h
Program/Erase
Suspend
B0h
D0h
Program/Erase
Resume
Block Lock
2
2
2
Write
Write
Write
X
X
X
60h Write BA
60h Write BA
01h
D0h
2Fh
Block Unlock
Block Lock-Down
60h Write
BA
Protection
Register Program
2
Write
X
C0h Write PRA PRD
Note: 1. X = Don’t Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code),
QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Ad-
dress, PRD=Protection Register Data.
2. The signature addresses are listed in Tables 5, 6 and 7.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. 55h is reserved.
6. To be characterized.
14/53
M28W320ECT, M28W320ECB
Table 5. Read Electronic Signature
Code
Device
E
G
W
A0
A1
A2-A7
A8-A20
DQ0-DQ7
DQ8-DQ15
Manufacture.
Code
V
V
IL
V
V
V
IL
0
Don’t Care
20h
00h
IL
IH
IL
V
V
V
V
V
V
V
V
M28W320ECT
M28W320ECB
0
0
Don’t Care
Don’t Care
BAh
BBh
88h
88h
IL
IL
IH
IH
IH
IL
Device Code
V
IH
V
IL
IL
IL
Note:
RP = V .
IH
Table 6. Read Block Lock Signature
Block Status
Locked Block
E
G
W
A0
A1 A2-A7
A8-A11
A12-A20
DQ0 DQ1 DQ2-DQ15
V
IL
V
V
IH
V
IL
V
0
0
Don’t Care Block Address
Don’t Care Block Address
1
0
0
0
00h
00h
IL
IL
IH
IH
V
V
V
V
V
V
V
IL
V
Unlocked Block
IL
IH
Locked-Down
Block
(1)
V
IL
V
IH
0
Don’t Care Block Address
1
00h
IL
IL
IH
X
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 7. Read Protection Register and Lock Register
Word
E
G
W
A0-A7
A8-A20
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
OTP Prot.
data
Don’t Care
See note (1)
Don’t
V
IL
V
V
IH
Lock
80h Don’t Care Don’t Care
Don’t Care
Care
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
Unique ID 0
Unique ID 1
Unique ID 2
Unique ID 3
OTP 0
81h Don’t Care
82h Don’t Care
83h Don’t Care
84h Don’t Care
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
ID data
ID data
ID data
ID data
ID data
85h Don’t Care OTP data
86h Don’t Care OTP data
87h Don’t Care OTP data
88h Don’t Care OTP data
89h Don’t Care OTP data
8Ah Don’t Care OTP data
8Bh Don’t Care OTP data
8Ch Don’t Care OTP data
OTP data
OTP data
OTP data
OTP data
OTP data
OTP data
OTP data
OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP 1
OTP 2
OTP 3
OTP 4
OTP 5
OTP 6
OTP 7
Note: 1. DQ2 in the Protection Lock Register must not be programmed to 0.
15/53
M28W320ECT, M28W320ECB
Table 8. Program, Erase Times and Program/Erase Endurance Cycles
M28W320EC
Parameter
Test Conditions
Unit
Min
Typ
10
Max
200
200
200
5
V
= V
DD
Word Program
µs
µs
µs
s
PP
V
PP
V
PP
V
PP
V
= 12V ±5%
= 12V ±5%
= 12V ±5%
= V
Double Word Program
10
Quadruple Word Program
10
(1)
0.16/0.08
Main Block Program
0.32
5
s
PP
DD
(1)
V
V
V
= 12V ±5%
= V
4
s
PP
0.02/0.01
Parameter Block Program
Main Block Erase
V
0.04
1
4
s
PP
DD
= 12V ±5%
= V
10
10
10
10
s
PP
V
1
s
s
PP
DD
= 12V ±5%
= V
0.4
0.4
PP
Parameter Block Erase
V
s
PP
DD
Program/Erase Cycles (per Block)
Data Retention
100,000
20
cycles
years
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
16/53
M28W320ECT, M28W320ECB
BLOCK LOCKING
The M28W320EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
software commands. A locked block can be un-
locked by issuing the Unlock command.
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their protection status can-
not be changed using software commands alone.
A Locked or Unlocked block can be Locked-Down
by issuing the Lock-Down command. Locked-
Down blocks revert to the Locked state when the
device is reset or powered-down.
■ Lock/Unlock - this first level allows software-
only control of block locking.
■ Lock-Down - this second level requires
hardware interaction before locking can be
changed.
■ V ≤ V
- the third level offers a complete
PP
PPLK
The Lock-Down function is dependent on the WP
hardware protection against program and erase
on all blocks.
input pin. When WP=0 (V ), the blocks in the
IL
Lock-Down state (0,1,x) are protected from pro-
gram, erase and protection status changes. When
The protection status of each block can be set to
Locked, Unlocked, and Lock-Down. Table 10, de-
fines all of the possible protection states (WP,
DQ1, DQ0), and Appendix C, Figure 23, shows a
flowchart for the locking operations.
WP=1 (V ) the Lock-Down function is disabled
IH
(1,1,1) and Locked-Down blocks can be individu-
ally unlocked to the (1,1,0) state by issuing the
software command, where they can be erased and
programmed. These blocks can then be relocked
(1,1,1) and unlocked (1,1,0) as desired while WP
remains high. When WP is low , blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,x) regardless of any changes made
while WP was high. Device reset or power-down
resets all blocks , including those in Lock-Down, to
the Locked state.
Reading a Block’s Lock Status
The lock status of every block can be read in the
Read Electronic Signature mode of the device. To
enter this mode write 90h to the device. Subse-
quent reads at the address specified in Table 6,
will output the protection status of that block. The
lock status is represented by DQ0 and DQ1. DQ0
indicates the Block Lock/Unlock status and is set
by the Lock command and cleared by the Unlock
command. It is also automatically set when enter-
ing Lock-Down. DQ1 indicates the Lock-Down sta-
tus and is set by the Lock-Down command. It
cannot be cleared by software, only by a hardware
reset or power-down.
Locking Operations During Erase Suspend
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase opera-
tion, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the lock status will be changed. After complet-
ing any desired lock, read, or program operations,
resume the erase operation with the Erase Re-
sume command.
The following sections explain the operation of the
locking system.
Locked State
The default status of all blocks on power-up or af-
ter a hardware reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
any program or erase. Any program or erase oper-
ations attempted on a locked block will return an
error in the Status Register. The Status of a
Locked block can be changed to Unlocked or
Lock-Down using the appropriate software com-
mands. An Unlocked block can be Locked by issu-
ing the Lock command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Unlocked State
Locking operations cannot be performed during a
program suspend. Refer to Appendix D, Com-
mand Interface and Program/Erase Controller
State, for detailed information on which com-
mands are valid during erase suspend.
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)),
can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware
reset or when the device is powered-down. The
status of an unlocked block can be changed to
Locked or Locked-Down using the appropriate
17/53
M28W320ECT, M28W320ECB
Table 9. Block Lock Status
Item
Address
Data
Block Lock Configuration
Block is Unlocked
LOCK
DQ0=0
DQ0=1
DQ1=1
xx002
Block is Locked
Block is Locked-Down
Table 10. Protection Status
Current
(1)
Next Protection Status
(WP, DQ1, DQ0)
(1)
Protection Status
(WP, DQ1, DQ0)
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
Program/Erase
Current State
After
WP transition
Allowed
1,0,0
yes
no
1,0,1
1,0,1
1,1,1
1,1,1
0,0,1
0,0,1
1,0,0
1,0,0
1,1,0
1,1,0
0,0,0
0,0,0
1,1,1
1,1,1
1,1,1
1,1,1
0,1,1
0,1,1
0,0,0
0,0,1
0,1,1
0,1,1
1,0,0
1,0,1
(2)
1,0,1
1,1,0
1,1,1
0,0,0
yes
no
yes
no
(2)
0,0,1
(3)
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = V and A0 = V .
IH
IL
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to V on a locked block will restore the previous DQ0 value, giving a 111 or 110.
IH
18/53
M28W320ECT, M28W320ECB
STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read Status Register command can be issued, re-
fer to Read Status Register Command section. To
output the contents, the Status Register is latched
on the falling edge of the Chip Enable or Output
Enable signals, and can be read until Chip Enable
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum num-
ber of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Sta-
tus bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
or Output Enable returns to V . Either Chip En-
IH
able or Output Enable must be toggled to update
the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the byte and still failed to ver-
ify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
The bits in the Status Register are summarized in
Table 11, Status Register Bits. Refer to Table 11
in conjunction with the following text descriptions.
Program/Erase Controller Status (Bit 7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to ‘1’), the Pro-
gram/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High .
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new command is issued, otherwise the new
command will appear to fail.
During Program, Erase, operations the Program/
Erase Controller Status bit can be polled to find the
end of the operation. Other bits in the Status Reg-
ister should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
V
Status (Bit 3). The V
Status bit can be
PP
PP
used to identify an invalid voltage on the V pin
during Program and Erase operations. The V
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
PP
PP
cur if V becomes invalid during an operation.
PP
After the Program/Erase Controller completes its
When the V Status bit is Low (set to ‘0’), the volt-
PP
operation the Erase Status, Program Status, V
age on the V pin was sampled at a valid voltage;
PP
PP
Status and Block Lock Status bits should be tested
for errors.
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended or is going to be suspended.
When the Erase Suspend Status bit is High (set to
‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
The Erase Suspend Status should only be consid-
ered valid when the Program/Erase Controller Sta-
tus bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Sus-
pend command being issued therefore the memo-
ry may still complete the operation rather than
entering the Suspend mode.
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended. When the Program
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Re-
sume command. The Program Suspend Status
should only be considered valid when the Pro-
19/53
M28W320ECT, M28W320ECB
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within 5µs of
the Program/Erase Suspend command being is-
sued therefore the memory may still complete the
operation rather than entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
Table 11. Status Register Bits
Bit
Name
Logic Level
Definition
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
Ready
7
P/E.C. Status
Busy
Suspended
6
5
4
3
2
Erase Suspend Status
Erase Status
In progress or Completed
Erase Error
Erase Success
Program Error
Program Status
Program Success
V
V
Invalid, Abort
OK
PP
PP
V
PP
Status
Suspended
Program Suspend Status
In Progress or Completed
Program/Erase on protected Block, Abort
No operation to protected blocks
1
0
Block Protection Status
Reserved
Note: Logic level ’1’ is High, ’0’ is Low.
20/53
M28W320ECT, M28W320ECB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 12. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
– 40
– 40
– 55
– 0.6
– 0.6
– 0.6
Max
85
(1)
T
°C
°C
°C
V
A
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
T
125
155
BIAS
T
STG
V
IO
V
+0.6
DDQ
V
, V
DD DDQ
4.1
13
V
V
PP
Program Voltage
V
Note: 1. Depends on range.
21/53
M28W320ECT, M28W320ECB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 13. Operating and AC Measurement Conditions
M28W320ECT, M28W320ECB
70
85
90
10
Parameter
Supply Voltage
Units
Min
Max
Min
Max
Min
Max
Min
Max
V
2.7
3.6
2.7
3.6
2.7
3.6
2.7
3.6
V
V
DD
V
V
Supply Voltage (V
≤
DDQ
DDQ
2.7
3.6
2.7
3.6
2.7
3.6
1.65
3.6
)
DD
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
– 40
85
°C
pF
ns
V
Load Capacitance (C )
50
50
50
50
L
Input Rise and Fall Times
Input Pulse Voltages
5
5
5
5
0 to V
0 to V
0 to V
0 to V
DDQ
DDQ
DDQ
DDQ
Input and Output Timing Ref.
Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
/2
DDQ
V
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
V
DDQ
V
DDQ
V
/2
DDQ
V
DDQ
V
0V
DD
25kΩ
AI00610
DEVICE
UNDER
TEST
C
L
25kΩ
0.1µF
0.1µF
C
includes JIG capacitance
AI00609C
L
Table 14. Capacitance
Symbol
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
6
Unit
pF
C
V
= 0V
= 0V
IN
IN
C
OUT
V
OUT
12
pF
Note: Sampled only, not 100% tested.
22/53
M28W320ECT, M28W320ECB
Table 15. DC Characteristics
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Test Condition
Min
Typ
Max
±1
Unit
µA
I
0V≤ V ≤ V
LI
IN
DDQ
I
0V≤ V
≤V
±10
18
µA
LO
OUT DDQ
I
E = V , G = V , f = 5MHz
9
mA
DD
SS
IH
E = V
RP = V
± 0.2V,
Supply Current (Stand-by or
Automatic Stand-by)
DDQ
I
15
50
50
10
20
20
20
50
400
µA
µA
DD1
± 0.2V
DDQ
Supply Current
(Reset)
I
RP = V ± 0.2V
15
5
DD2
SS
Program in progress
mA
mA
mA
mA
µA
V
PP
= 12V ± 5%
I
Supply Current (Program)
Supply Current (Erase)
DD3
Program in progress
= V
10
5
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
DD4
Erase in progress
= V
10
15
V
PP
DD
E = V
Erase suspended
± 0.2V,
Supply Current
(Program/Erase Suspend)
DDQ
I
DD5
Program Current
(Read or Stand-by)
I
V
> V
µA
PP
PP
PP
DD
Program Current
(Read or Stand-by)
I
V
≤ V
1
1
1
5
5
µA
µA
PP1
DD
I
RP = V ± 0.2V
Program Current (Reset)
PP2
SS
Program in progress
10
mA
V
PP
= 12V ± 5%
I
Program Current (Program)
PP3
Program in progress
= V
1
3
1
5
10
5
µA
mA
µA
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
Program Current (Erase)
PP4
Erase in progress
= V
V
PP
DD
–0.5
–0.5
0.4
0.8
V
V
V
V
V
Input Low Voltage
Input High Voltage
IL
V
V
≥ 2.7V
≥ 2.7V
DDQ
DDQ
V
–0.4
V
V
+0.4
DDQ
DDQ
V
IH
0.7 V
+0.4
DDQ
DDQ
I
= 100µA, V = V min,
DD DD
OL
V
Output Low Voltage
Output High Voltage
0.1
V
V
V
OL
V
= V
min
DDQ
DDQ
I
= –100µA, V = V min,
DD DD
OH
V
OH
V
–0.1
DDQ
V
DDQ
= V
min
DDQ
Program Voltage (Program or
Erase operations)
V
1.65
3.6
PP1
Program Voltage
(Program or Erase
operations)
V
PPH
11.4
12.6
V
Program Voltage
(Program and Erase lock-out)
V
1
2
V
V
PPLK
V
DD
Supply Voltage (Program
V
LKO
and Erase lock-out)
23/53
M28W320ECT, M28W320ECB
Figure 9. Read AC Waveforms
tAVAV
VALID
A0-A20
E
tAVQV
tAXQX
tELQV
tELQX
tEHQX
tEHQZ
G
tGLQV
tGHQX
tGHQZ
tGLQX
VALID
DQ0-DQ15
OUTPUTS
ENABLED
ADDR. VALID
CHIP ENABLE
DATA VALID
STANDBY
AI02688b
Table 16. Read AC Characteristics
M28W320EC
Symbol
Alt
Parameter
Unit
70
70
70
85
85
85
90
90
90
10
t
t
Address Valid to Next Address Valid
Address Valid to Output Valid
Min
100
100
ns
ns
ns
AVAV
RC
t
t
ACC
Max
Min
Min
Max
Max
Min
Min
Max
AVQV
(1)
t
Address Transition to Output Transition
0
0
0
0
0
0
0
0
t
OH
OH
AXQX
(1)
(1)
(2)
(1)
(1)
(1)
(2)
(1)
t
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
ns
ns
ns
ns
ns
ns
ns
ns
t
EHQX
t
HZ
t
CE
20
70
0
20
85
0
25
90
0
30
100
0
t
EHQZ
Chip Enable Low to Output Valid
t
t
ELQV
ELQX
t
LZ
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
t
0
0
0
0
t
OH
GHQX
t
20
20
0
20
20
0
25
30
0
30
35
0
t
DF
OE
GHQZ
t
Max
Min
t
t
GLQV
t
OLZ
GLQX
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
- t
after the falling edge of E without increasing t
.
ELQV
ELQV GLQV
24/53
M28W320ECT, M28W320ECB
Figure 10. Write AC Waveforms, Write Enable Controlled
25/53
M28W320ECT, M28W320ECB
Table 17. Write AC Characteristics, Write Enable Controlled
M28W320EC
Symbol
Alt
Parameter
Unit
70
70
45
45
0
85
85
45
45
0
90
90
50
50
0
10
100
50
t
t
WC
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
t
t
Address Valid to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Chip Enable Low to Output Valid
AVWH
AS
DS
CS
t
t
t
50
DVWH
t
0
ELWL
t
70
85
90
100
ELQV
(1,2)
Output Valid to V Low
0
0
0
0
0
0
0
0
t
PP
QVVPL
t
Output Valid to Write Protect Low
QVWPL
(1)
t
V
PP
High to Write Enable High
200
0
200
0
200
0
200
0
t
VPS
VPHWH
t
t
t
Write Enable High to Address Transition
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Chip Enable Low
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Protect High to Write Enable High
WHAX
AH
t
0
0
0
0
WHDX
WHEH
DH
CH
t
t
0
0
0
0
t
25
20
25
45
45
25
20
25
45
45
30
30
30
50
50
30
30
30
50
50
WHEL
WHGL
t
t
t
WHWL
WPH
t
t
WLWH
WP
t
WPHWH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 3.6V).
PP
PP
26/53
M28W320ECT, M28W320ECB
Figure 11. Write AC Waveforms, Chip Enable Controlled
27/53
M28W320ECT, M28W320ECB
Table 18. Write AC Characteristics, Chip Enable Controlled
M28W320EC
Symbol
Alt
Parameter
Unit
70
70
45
45
85
85
45
45
90
90
50
50
10
100
50
t
t
WC
Write Cycle Time
Min
Min
Min
ns
ns
ns
AVAV
t
t
AS
Address Valid to Chip Enable High
Data Valid to Chip Enable High
AVEH
t
t
t
t
50
DVEH
DS
Chip Enable High to Address
Transition
t
Min
0
0
0
0
ns
EHAX
AH
t
Chip Enable High to Data Transition
Chip Enable High to Chip Enable Low
Min
Min
0
0
0
0
ns
ns
EHDX
DH
t
t
CPH
25
25
30
30
EHEL
Chip Enable High to Output Enable
Low
t
Min
25
25
30
30
ns
EHGL
t
t
WH
Chip Enable High to Write Enable High Min
0
45
70
0
0
45
85
0
0
50
90
0
0
50
100
0
ns
ns
ns
ns
ns
ns
ns
ns
EHWH
t
t
CP
Chip Enable Low to Chip Enable High
Chip Enable Low to Output Valid
Min
Min
Min
Min
Min
Min
ELEH
t
ELQV
(1,2)
Output Valid to V Low
t
PP
QVVPL
t
Data Valid to Write Protect Low
0
0
0
0
QVWPL
(1)
t
V
High to Chip Enable High
PP
200
0
200
0
200
0
200
0
t
VPS
VPHEH
t
t
CS
Write Enable Low to Chip Enable Low
WLEL
t
Write Protect High to Chip Enable High Min
45
45
50
50
WPHEH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 3.6V).
PP
PP
28/53
M28W320ECT, M28W320ECB
Figure 12. Power-Up and Reset AC Waveforms
W, E, G
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-Up
Reset
AI03537b
Table 19. Power-Up and Reset AC Characteristics
M28W320EC
Unit
Symbol
Parameter
Test Condition
70
85
90
10
During
Program
and Erase
t
t
t
PHWL
Min
50
50
50
50
µs
Reset High to Write Enable Low, Chip
Enable Low, Output Enable Low
PHEL
PHGL
others
Min
Min
30
30
30
30
ns
ns
(1,2)
(3)
Reset Low to Reset High
100
100
100
100
t
t
PLPH
Supply Voltages High to Reset High
Min
50
50
50
50
µs
VDHPH
Note: 1. The device Reset is possible but not guaranteed if t
2. Sampled only, not 100% tested.
< 100ns.
PLPH
3. It is important to assert RP in order to allow proper CPU initialization during power up or reset.
29/53
M28W320ECT, M28W320ECB
PACKAGE MECHANICAL
Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
D
A
CP
DIE
C
TSOP-a
Note: Drawing is not to scale.
A1
α
L
Table 20. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data
mm
inches
Symbol
Typ
Min
Max
1.20
0.15
1.05
0.27
0.21
20.20
18.50
12.10
–
Typ
Min
Max
0.0472
0.0059
0.0413
0.0106
0.0083
0.7953
0.7283
0.4764
–
A
A1
A2
B
0.05
0.95
0.17
0.10
19.80
18.30
11.90
–
0.0020
0.0374
0.0067
0.0039
0.7795
0.7205
0.4685
–
C
D
D1
E
e
0.50
0.0197
L
0.50
0°
0.70
5°
0.0197
0°
0.0279
5°
α
N
48
48
CP
0.10
0.0039
30/53
M28W320ECT, M28W320ECB
Figure 14. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline
D
D1
FD
FE
SD
SE
E
E1
e
ddd
BALL "A1"
A
e
b
A2
A1
BGA-Z35
Note: Drawing is not to scale.
Table 21. TFBGA47 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical Data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
1.200
0.0472
0.200
0.0079
1.000
0.0394
0.400
6.390
5.250
0.350
6.290
–
0.450
0.0157
0.2516
0.2067
0.0138
0.2476
–
0.0177
D
6.490
0.2555
D1
ddd
E
–
–
0.100
0.0039
6.370
3.750
0.750
0.570
1.310
0.375
0.375
6.270
6.470
0.2508
0.1476
0.0295
0.0224
0.0516
0.0148
0.0148
0.2469
0.2547
E1
e
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
FD
FE
SD
SE
31/53
M28W320ECT, M28W320ECB
Figure 15. TFBGA47 Daisy Chain - Package Connections (Top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
AI03295
Figure 16. TFBGA47 Daisy Chain - PCB Connections proposal (Top view through package)
1
2
3
4
5
6
7
8
START
POINT
A
B
C
D
E
F
END
POINT
AI03296
32/53
M28W320ECT, M28W320ECB
PART NUMBERING
Table 22. Ordering Information Scheme
Example:
M28W320ECT
90
N
6
T
Device Type
M28
Operating Voltage
W = V = 2.7V to 3.6V; V
= 1.65V to 3.6V
DDQ
DD
Device Function
320EC = 32 Mbit (2 Mb x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70ns
85 = 85ns
90 = 90ns
10 = 100ns
Package
N = TSOP48: 12 x 20mm
ZB = TFBGA47: 6.39 x 6.37mm, 0.75 mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-Free Package, Standard Packing
F = Lead-Free Package, Tape & Reel Packing
33/53
M28W320ECT, M28W320ECB
Table 23. Daisy Chain Ordering Scheme
Example:
M28W320EC
-ZB T
Device Type
M28W320EC
Daisy Chain
-ZB = TFBGA47: 6.39 x 6.37mm, 0.75 mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-Free Package, Standard Packing
F = Lead-Free Package, Tape & Reel Packing
Note:Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available
options (Speed, Package, etc.) or for further information on any aspect of this device, please contact
the ST Sales Office nearest to you.
34/53
M28W320ECT, M28W320ECB
APPENDIX A. BLOCK ADDRESS TABLES
Table 24. Top Boot Block Addresses,
M28W320ECT
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
120000-127FFF
118000-11FFFF
110000-117FFF
108000-10FFFF
100000-107FFF
0F8000-0FFFFF
0F00000-F7FFF
0E8000-0EFFFF
0E0000-0E7FFF
0D8000-0DFFFF
0D0000-0D7FFF
0C8000-0CFFFF
0C0000-0C7FFF
0B8000-0BFFFF
0B0000-0B7FFF
0A8000-0AFFFF
0A0000-0A7FFF
098000-09FFFF
090000-097FFF
088000-08FFFF
080000-087FFF
078000-07FFFF
070000-077FFF
068000-06FFFF
060000-067FFF
058000-05FFFF
050000-057FFF
048000-04FFFF
040000-047FFF
038000-03FFFF
030000-037FFF
028000-02FFFF
020000-027FFF
018000-01FFFF
010000-017FFF
008000-00FFFF
000000-007FFF
Size
(KWord)
#
Address Range
0
4
1FF000-1FFFFF
1FE000-1FEFFF
1FD000-1FDFFF
1FC000-1FCFFF
1FB000-1FBFFF
1FA000-1FAFFF
1F9000-1F9FFF
1F8000-1F8FFF
1F0000-1F7FFF
1E8000-1EFFFF
1E0000-1E7FFF
1D8000-1DFFFF
1D0000-1D7FFF
1C8000-1CFFFF
1C0000-1C7FFF
1B8000-1BFFFF
1B0000-1B7FFF
1A8000-1AFFFF
1A0000-1A7FFF
198000-19FFFF
190000-197FFF
188000-18FFFF
180000-187FFF
178000-17FFFF
170000-177FFF
168000-16FFFF
160000-167FFF
158000-15FFFF
150000-157FFF
148000-14FFFF
140000-147FFF
138000-13FFFF
130000-137FFF
128000-12FFFF
1
4
2
4
3
4
4
4
5
4
6
4
7
4
8
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
35/53
M28W320ECT, M28W320ECB
Table 25. Bottom Boot Block Addresses,
M28W320ECB
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
0E8000-0EFFFF
0E0000-0E7FFF
0D8000-0DFFFF
0D0000-0D7FFF
0C8000-0CFFFF
0C0000-0C7FFF
0B8000-0BFFFF
0B0000-0B7FFF
0A8000-0AFFFF
0A0000-0A7FFF
098000-09FFFF
090000-097FFF
088000-08FFFF
080000-087FFF
078000-07FFFF
070000-077FFF
068000-06FFFF
060000-067FFF
058000-05FFFF
050000-057FFF
048000-04FFFF
040000-047FFF
038000-03FFFF
030000-037FFF
028000-02FFFF
020000-027FFF
018000-01FFFF
010000-017FFF
008000-00FFFF
007000-007FFF
006000-006FFF
005000-005FFF
004000-004FFF
003000-003FFF
002000-002FFF
001000-001FFF
000000-000FFF
Size
#
Address Range
(KWord)
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
1F8000-1FFFFF
1F0000-1F7FFF
1E8000-1EFFFF
1E0000-1E7FFF
1D8000-1DFFFF
1D0000-1D7FFF
1C8000-1CFFFF
1C0000-1C7FFF
1B8000-1BFFFF
1B0000-1B7FFF
1A8000-1AFFFF
1A0000-1A7FFF
198000-19FFFF
190000-197FFF
188000-18FFFF
180000-187FFF
178000-17FFFF
170000-177FFF
168000-16FFFF
160000-167FFF
158000-15FFFF
150000-157FFF
148000-14FFFF
140000-147FFF
138000-13FFFF
130000-137FFF
128000-12FFFF
120000-127FFF
118000-11FFFF
110000-117FFF
108000-10FFFF
100000-107FFF
0F8000-0FFFFF
0F0000-0F7FFF
8
7
6
4
5
4
4
4
3
4
2
4
1
4
0
4
36/53
M28W320ECT, M28W320ECB
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
structure is read from the memory. Tables 26, 27,
28, 29, 30 and 31 show the addresses used to re-
trieve the data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 31, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
Table 26. Query Structure Overview
Offset
00h
Sub-section Name
Description
Reserved for algorithm-specific information
Command set ID and algorithm data offset
Device timing & voltage information
Flash device layout
Reserved
10h
CFI Query Identification String
System Interface Information
Device Geometry Definition
1Bh
27h
Additional information specific to the Primary
Algorithm (optional)
P
A
Primary Algorithm-specific Extended Query table
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Note: Query data are always presented on the lowest order data outputs.
Table 27. CFI Query Identification String
Offset
Data
Description
Value
00h
0020h
Manufacturer Code
Device Code
ST
88BAh
88BBh
Top
Bottom
01h
02h-0Fh
10h
reserved Reserved
0051h
"Q"
"R"
"Y"
11h
0052h
0059h
0003h
0000h
0035h
0000h
0000h
0000h
0000h
0000h
Query Unique ASCII String "QRY"
12h
13h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
Intel
compatible
14h
15h
Address for Primary Algorithm extended Query table (see Table 29)
P = 35h
NA
16h
17h
Alternate Vendor Command Set and Control Interface ID Code second vendor -
specified algorithm supported (0000h means none exists)
18h
19h
Address for Alternate Algorithm extended Query table
(0000h means none exists)
NA
1Ah
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
37/53
M28W320ECT, M28W320ECB
Table 28. CFI Query System Interface Information
Offset
Data
Description
Value
V
DD
V
DD
V
PP
V
PP
Logic Supply Minimum Program/Erase or Write voltage
1Bh
0027h
2.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
1Ch
1Dh
1Eh
0036h
00B4h
00C6h
3.6V
11.4V
12.6V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
0000h
0005h
0005h
0003h
0000h
16µs
16µs
1s
Typical time-out per single word program = 2 µs
n
Typical time-out for Double/ Quadruple Word Program = 2 µs
n
Typical time-out per individual block erase = 2 ms
n
NA
Typical time-out for full chip erase = 2 ms
n
512µs
512µs
8s
Maximum time-out for word program = 2 times typical
n
Maximum time-out for Double/ Quadruple Word Program = 2 times typical
n
Maximum time-out per individual block erase = 2 times typical
n
NA
Maximum time-out for chip erase = 2 times typical
38/53
M28W320ECT, M28W320ECB
Table 29. Device Geometry Definition
Offset Word
Data
Description
Value
Mode
n
27h
0016h
4 MByte
Device Size = 2 in number of bytes
28h
29h
0001h
0000h
x16
Async.
Flash Device Interface Code description
2Ah
2Bh
0003h
0000h
n
8
2
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Ch
0002h
2Dh
2Eh
003Eh
0000h
Region 1 Information
Number of identical-size erase block = 003Eh+1
63
64 KByte
8
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
8
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
63
31h
32h
003Eh
0000h
Region 2 Information
Number of identical-size erase block = 003Eh=1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
39/53
M28W320ECT, M28W320ECB
Table 30. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(1)
P = 35h
(P+0)h = 35h
(P+1)h = 36h
(P+2)h = 37h
(P+3)h = 38h
(P+4)h = 39h
(P+5)h = 3Ah
(P+6)h = 3Bh
(P+7)h = 3Ch
(P+8)h = 3Dh
0050h
0052h
0049h
0031h
0030h
0066h
0000h
0000h
0000h
"P"
"R"
"I"
Primary Algorithm extended Query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
"1"
"0"
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
bit 1
bit 2
bit 3
bit 4
bit 5
bit 6
bit 7
bit 8
Chip Erase supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
Suspend Erase supported
Suspend Program supported
Legacy Lock/Unlock supported
Queued Erase supported
No
Yes
Yes
No
Instant individual block locking supported (1 = Yes, 0 = No)
No
Protection bits supported
Page mode read supported
Synchronous read supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
Yes
Yes
No
bit 31 to 9 Reserved; undefined bits are ‘0’
No
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
bit 7 to 1
Program supported after Erase Suspend (1 = Yes, 0 = No)
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
(P+B)h = 40h
0003h
0000h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0 Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+C)h = 41h
(P+D)h = 42h
(P+E)h = 43h
0030h
00C0h
0001h
V
V
Logic Supply Optimum Program/Erase voltage (highest performance)
3V
12V
01
DD
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Supply Optimum Program/Erase voltage
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
(P+F)h = 44h
(P+10)h = 45h
(P+11)h = 46h
(P+12)h = 47h
0080h
0000h
0003h
0003h
Protection Field 1: Protection Description
80h
00h
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
8 Byte
8 Byte
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
Lock/bytes JEDEC-plane physical high address
n
bit 16 to 23 "n" such that 2 = factory pre-programmed bytes
n
bit 24 to 31 "n" such that 2 = user programmable bytes
(P+13)h = 48h
Reserved
Note: 1. See Table 27, offset 15 for P pointer definition.
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M28W320ECT, M28W320ECB
Table 31. Security Code Area
Offset
80h
81h
82h
83h
84h
85h
86h
87h
88h
89h
8Ah
8Bh
8Ch
Data
00XX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
Description
Protection Register Lock
64 bits: unique device number
128 bits: User Programmable OTP
41/53
M28W320ECT, M28W320ECB
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 17. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
Write 40h or 10h
writeToFlash (any_address, 0x40) ;
/*or writeToFlash (any_address, 0x10) ; */
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
NO
NO
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03538b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
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M28W320ECT, M28W320ECB
Figure 18. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 1
& Data 1 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03539b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
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M28W320ECT, M28W320ECB
Figure 19. Quadruple Word Program Flowchart and Pseudo Code
Start
quadruple_word_program_command (addressToProgram1, dataToProgram1,
Write 56h
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
Write Address 1
& Data 1 (3)
writeToFlash (any_address, 0x56) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 2
& Data 2 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
Write Address 3
& Data 3 (3)
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
Write Address 4
& Data 4 (3)
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI06233
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
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M28W320ECT, M28W320ECB
Figure 20. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
program has already completed */
Write 70h
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
b2 = 1
YES
Program Complete
if (status_register.b2==0) /*program completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
}
Read data from
another address
else
{ writeToFlash (any_address, 0xFF) ;
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
Write FFh
Read Data
}
}
Program Continues
AI03540b
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M28W320ECT, M28W320ECB
Figure 21. Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (any_address, 0x20) ;
Write 20h
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
} while (status_register.b7== 0) ;
YES
NO
YES
NO
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
Error (1)
b3 = 0
YES
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
Command
Sequence Error (1)
b4, b5 = 1
NO
error_handler ( ) ;
if ( (status_register.b5==1) )
/* erase error */
b5 = 0
YES
Erase Error (1)
error_handler ( ) ;
Erase to Protected
Block Error (1)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03541b
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
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M28W320ECT, M28W320ECB
Figure 22. Erase Suspend & Resume Flowchart and Pseudo Code
Start
erase_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
Write 70h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
NO
} while (status_register.b7== 0) ;
b7 = 1
YES
if (status_register.b6==0) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
b6 = 1
YES
Erase Complete
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
}
else
{ writeToFlash (any_address, 0xFF) ;
read_program_data ( );
Write D0h
Write FFh
Read Data
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
}
Erase Continues
AI03542b
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M28W320ECT, M28W320ECB
Figure 23. Locking Operations Flowchart and Pseudo Code
Start
locking_operation_command (address, lock_operation) {
Write 60h
writeToFlash (any_address, 0x60) ; /*configuration setup*/
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
Write
01h, D0h or 2Fh
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (any_address, 0x90) ;
Write 90h
Read Block
Lock States
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
NO
Locking
change
/*Check the locking state (see Read Block Signature table )*/
confirmed?
YES
writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/
Write FFh
}
End
AI04364
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M28W320ECT, M28W320ECB
Figure 24. Protection Register Program Flowchart and Pseudo Code
Start
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0xC0) ;
Write C0h
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
NO
NO
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI04381
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
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M28W320ECT, M28W320ECB
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE
Table 32. Write State Machine Current/Next, sheet 1 of 2.
Command Input (and Next State)
Data
When
Read
Current
State
SR
bit 7
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Setup
(20h)
Erase
Confirm
(D0h)
Prog/Ers
Suspend
(B0h)
Prog/Ers
Resume
(D0h)
Read
Status
(70h)
Clear
Status
(50h)
Read Array
“1”
“1”
Array
Read Array Prog.Setup Ers. Setup
Read Array
Read Sts. Read Array
Read
Status
Program
Setup
Erase
Setup
Read
Status
Read Array
Read Array
Read Array
Read Array
Read Array
Status
Read
Elect.Sg.
Electronic
Signature
Program
Setup
Erase
Setup
Read
“1”
“1”
“1”
“1”
“1”
“1”
“0”
“1”
Read Array
Read Array
Read Array
Status
Read CFI
Query
Program
Setup
Erase
Setup
Read
CFI
Read Array
Status
Lock
(complete)
Lock Cmd
Error
Lock
(complete)
Lock Setup
Status
Status
Status
Status
Status
Lock Command Error
Program
Lock Command Error
Lock Cmd
Error
Erase
Setup
Read
Read Array
Read Array
Read Array
Read Array
Status
Setup
Lock
(complete)
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Status
Prot. Prog.
Setup
Protection Register Program
Protection Register Program continue
Prot. Prog.
(continue)
Prot. Prog.
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Read Array
Read Array
Program
Read Array
Status
Prog. Setup “1”
Program
“0”
Prog. Sus
Read Sts
Program (continue)
Program (continue)
(continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
Status
Array
Status
(continue) Read Array (continue)
Program Prog. Sus Program
(continue) Read Array (continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Prog. Sus Prog. Sus
Read Sts Read Array
Read Array
Prog. Sus
Read
Elect.Sg.
Electronic Prog. Sus
Signature Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
(continue) Read Array (continue)
Prog. Sus
Read CFI
Prog. Sus
CFI
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
“1”
“1”
“1”
“0”
“1”
“1”
Read Array
(continue) Read Array (continue)
Program
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Status
Status
Array
Read Array
Read Array
Read Array
Status
Erase
Setup
Erase
Erase
Erase
Erase Command Error
Erase Command Error
(continue) CmdError (continue)
Erase
Cmd.Error
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Status
Erase
(continue)
Erase Sus
Read Sts
Erase (continue)
Erase (continue)
Erase Sus
Read Sts
Erase Sus
Read Array
Program
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
Setup
Read Array (continue) Read Array (continue)
Erase Sus
Read Array
Erase Sus
Read Array
Program
Setup
Erase Sus Erase Erase Sus Erase
Read Array (continue) Read Array (continue)
Erase Sus Erase Sus
Read Sts Read Array
Erase Sus
Read
Elect.Sg.
Electronic Erase Sus
Signature Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
“1”
Read Array (continue) Read Array (continue)
Erase Sus
Read CFI
Erase Sus
CFI
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
“1”
“1”
Read Array
Read Array (continue) Read Array (continue)
Erase
(complete)
Program
Setup
Erase
Read
Status
Read Array
Read Array
Setup
Read Array
Status
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend.
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M28W320ECT, M28W320ECB
Table 33. Write State Machine Current/Next, sheet 2 of 2.
Command Input (and Next State)
Read CFI
Query
(98h)
Unlock
Confirm
(D0h)
Current State
Read Elect.Sg.
(90h)
Lock Setup
(60h)
Prot. Prog.
Setup (C0h)
Lock Confirm
(01h)
Lock Down
Confirm (2Fh)
Prot. Prog.
Setup
Read Array
Read Elect.Sg. Read CFI Query
Read Elect.Sg. Read CFI Query
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Read Array
Read Array
Read Array
Prot. Prog.
Setup
Read Status
Prot. Prog.
Setup
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Read CFI Query Read Elect.Sg. Read CFI Query
Prot. Prog.
Setup
Read Array
Lock (complete)
Read Array
Lock Setup
Lock Command Error
Prot. Prog.
Setup
Lock Cmd Error Read Elect.Sg. Read CFI Query
Lock Setup
Lock Setup
Prot. Prog.
Setup
Lock (complete) Read Elect.Sg. Read CFI Query
Read Array
Prot. Prog.
Setup
Protection Register Program
Prot. Prog.
(continue)
Protection Register Program (continue)
Prot. Prog.
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFI Query
(complete)
Read Array
Setup
Prog. Setup
Program
Program
(continue)
Program (continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Program
(continue)
Program Suspend Read Array
Program Suspend Read Array
Program Suspend Read Array
Program Suspend Read Array
Read Status
Prog. Suspend Prog. Suspend Prog. Suspend
Read Array Read Elect.Sg. Read CFI Query
Read Elect.Sg. Read CFI Query
Program
(continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Program
(continue)
Prog. Suspend Prog. Suspend Prog. Suspend
Program
(continue)
Read CFI
Read Elect.Sg. Read CFI Query
Program
(complete)
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFIQuery
Read Array
Read Array
Setup
Erase
(continue)
Erase Setup
Erase Command Error
Erase
Cmd.Error
Prot. Prog.
Lock Setup
Read Elect.Sg. Read CFI Query
Setup
Erase (continue)
Erase (continue)
Erase Suspend Erase Suspend Erase Suspend
Read Ststus Read Elect.Sg. Read CFI Query
Erase
(continue)
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Erase Suspend Read Array
Erase Suspend Read Array
Erase Suspend Erase Suspend Erase Suspend
Read Array Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase Suspend Erase Suspend Erase Suspend
Read Elect.Sg. Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase Suspend Read Array
Erase Suspend Read Array
Erase Suspend Erase Suspend Erase Suspend
Read CFI Query Read Elect.Sg. Read CFI Query
Erase
(continue)
Erase
Prot. Prog.
Setup
Read Elect.Sg. Read CFI Query
(complete)
Read Array
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection.
51/53
M28W320ECT, M28W320ECB
REVISION HISTORY
Table 34. Document Revision History
Date
Version
Revision Details
10-Sep-2001
-01
First Issue
Maximum changed to 3.3V
V
DDQ
06-Nov-2001
-02
Commands Table, Read CFI Query Address on 1st cycle changed to ‘X’ (Table 4)
Quadruple Word Program command added, V Maximum changed to 3.6V,
DDQ
TFBGA package dimensions added to description. Corrections to Program and
Erase times Table 8, DC Characteristics Table 15 and CFI Tables 28 and 29. Security
block removed. Command Codes Table added.
17-Jun-2002
-03
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 03 equals 3.0).
REVISION HISTORY moved to end of document.
“Double Word Program Command” and “Quadruple Word Program Command”
03-Oct-2002
3.1
clarified.
DQ0, DQ2, DQ3-DQ7 and DQ8-DQ15 parameters modified for Lock in Table 7, Read
Protection Register and Lock Register.
Data Retention parameter added to Table 8, Program, Erase Times and Program/
Erase Endurance Cycles. S option added to Table 22, Ordering Information Scheme,
and T option specified.
19-Feb-2003
29-Apr-2003
3.2
3.3
Document promoted from Preliminary Data to Full Datasheet status.
Lead-free package options added to Table 22, Ordering Information Scheme and
Table 23, Daisy Chain Ordering Scheme.
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M28W320ECT, M28W320ECB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
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