M29W512B55K1_技术文档

M29W512B

512 Kbit (64Kb x8, Bulk)

Low Voltage Single Supply Flash Memory

PRELIMINARY DATA

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 10µs per Byte typical

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

TSOP32 (NZ)

8 x 14mm

PLCC32 (K)

Figure 1. Logic Diagram

– Manufacturer Code: 20h

– Device Code: 27h

V

CC

16

8

A0-A15

DQ0-DQ7

W

E

M29W512B

G

V

SS

AI02743

July 1999

1/16

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M29W512B

Figure 2A. TSOP Connections

Figure 2B. PLCC Connections

A11

A9

1

32

G

A10

E

A8

A13

A14

NC

W

DQ7

DQ6

DQ5

DQ4

DQ3

1 32

A7

A14

A13

A8

A6

A5

A4

V

8

9

25

24

CC

A9

M29W512B

V

NC

SS

A3

A2

9

25 A11

G

M29W512B

DQ2

DQ1

DQ0

A0

A15

A12

A7

A1

A10

E

A0

DQ0

DQ7

17

A6

A1

A5

A2

A4

16

17

A3

AI02755

AI02976

Table 1. Signal Names

quired to update the memory contents. The end of

a program or erase operation can be detected and

any error conditions identified. The command set

required to control the memory is consistent with

JEDEC standards.

A0-A15

Address Inputs

Data Inputs/Outputs

DQ0-DQ7

Chip Enable, Output Enable and Write Enable sig-

nals control the bus operation of the memory.

They allow simple connection to most micropro-

cessors, often without additional logic.

The memory is offered in TSOP32 (8 x 14mm) and

PLCC32 packages. Access times of 55ns, 70ns

90ns and 120ns are available. The memory is sup-

plied with all the bits erased (set to ’1’).

E

Chip Enable

G

W

Output Enable

Write Enable

V

CC

Supply Voltage

Ground

V

SS

SIGNAL DESCRIPTIONS

NC

Not Connected Internally

See Figure 1, Logic Diagram, and Table 1, Signal

Names, for a brief overview of the signals connect-

ed to this device.

SUMMARY DESCRIPTION

The M29W512B is a 512 Kbit (64Kb x8) non-vola-

tile memory that can be read, erased and repro-

grammed. These operations can be performed

using a single low voltage (2.7 to 3.6V) supply. On

power-up the memory defaults to its Read mode

where it can be read in the same way as a ROM or

EPROM.

Program and Erase commands are written to the

Command Interface of the memory. An on-chip

Program/Erase Controller simplifies the process of

programming or erasing the memory by taking

care of all of the special operations that are re-

Address Inputs (A0-A15). The Address Inputs

select the cells in the memory array to access dur-

ing Bus Read operations. During Bus Write opera-

tions they control the commands sent to the

Command Interface of the internal state machine.

Data Inputs/Outputs (DQ0-DQ7). The Data In-

puts/Outputs output the data stored at the selected

address during a Bus Read operation. During Bus

Write operations they represent the commands

sent to the Command Interface of the internal state

machine.

2/16

M29W512B

(1)

Table 2. Absolute Maximum Ratings

Symbol

Parameter

Value

0 to 70

Unit

°C

T

Ambient Operating Temperature

Temperature Under Bias

Storage Temperature

Input or Output Voltage

Supply Voltage

A

T

–50 to 125

–65 to 150

°C

BIAS

T

°C

STG

(2)

–0.6 to 4

V

IO

V

CC

V

Identification Voltage

–0.6 to 13.5

ID

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.

Chip Enable (E). The Chip Enable, E, activates

the memory, allowing Bus Read and Bus Write op-

erations to be performed. When Chip Enable is

BUS OPERATIONS

There are five standard bus operations that control

the device. These are Bus Read, Bus Write, Out-

put Disable, Standby and Automatic Standby. See

Table 3, Bus Operations, for a summary. Typically

glitches of less than 5ns are ignored by the mem-

ory and do not affect bus operations.

Bus Read. Bus Read operations read from the

memory cells, or specific registers in the Com-

mand Interface. A valid Bus Read operation in-

volves setting the desired address on the Address

High, V , all other pins are ignored.

IH

Output Enable (G). The Output Enable, G, con-

trols the Bus Read operation of the memory.

Write Enable (W). The Write Enable, W, controls

the Bus Write operation of the memory’s Com-

mand Interface.

V

Supply Voltage. The V

Supply Voltage

CC

supplies the power for all operations (Read, Pro-

gram, Erase etc.).

Inputs, applying a Low signal, V , to Chip Enable

and Output Enable and keeping Write Enable

IL

The Command Interface is disabled when the V

CC

High, V . The Data Inputs/Outputs will output the

IH

Supply Voltage is less than the Lockout Voltage,

value, see Figure 7, Read Mode AC Waveforms,

and Table 10, Read AC Characteristics, for details

of when the output becomes valid.

V

. This prevents Bus Write operations from ac-

LKO

cidentally damaging the data during power up,

power down and power surges. If the Program/

Erase Controller is programming or erasing during

this time then the operation aborts and the memo-

ry contents being altered will be invalid.

Bus Write. Bus Write operations write to the

Command Interface. A valid Bus Write operation

begins by setting the desired address on the Ad-

dress Inputs. The Address Inputs are latched by

the Command Interface on the falling edge of Chip

Enable or Write Enable, whichever occurs last.

The Data Inputs/Outputs are latched by the Com-

mand Interface on the rising edge of Chip Enable

or Write Enable, whichever occurs first. Output En-

A 0.1µF capacitor should be connected between

the V

Supply Voltage pin and the V Ground

CC

SS

pin to decouple the current surges from the power

supply. The PCB track widths must be sufficient to

carry the currents required during program and

erase operations, I

.

CC3

able must remain High, V , during the whole Bus

IH

Vss Ground. The V

Ground is the reference

SS

Write operation. See Figures 8 and 9, Write AC

Waveforms, and Tables 11 and 12, Write AC

Characteristics, for details of the timing require-

ments.

for all voltage measurements.

3/16

M29W512B

Table 3. Bus Operations

Operation

Data

Inputs/Outputs

E

G

W

Address Inputs

Cell Address

V

IH

Bus Read

Bus Write

Output Disable

Standby

Data Output

Data Input

Hi-Z

IL

IH

V

Command Address

IL

X

IH

V

X

Hi-Z

IH

A0 = V , A1 = V , A9 = V ,

Read Manufacturer

Code

IL

ID

V

20h

27h

IL

IH

Others V or V

IL

IH

A0 = V , A1 = V , A9 = V ,

IH

IL

ID

V

Read Device Code

Others V or V

IL

IH

Note: X = V or V

.

IH

IL

Output Disable. The Data Inputs/Outputs are in

COMMAND INTERFACE

the high impedance state when Output Enable is

All Bus Write operations to the memory are inter-

preted by the Command Interface. Commands

consist of one or more sequential Bus Write oper-

ations. Failure to observe a valid sequence of Bus

Write operations will result in the memory return-

ing to Read mode. The long command sequences

are imposed to maximize data security.

High, V .

IH

Standby. When Chip Enable is High, V , the

IH

memory enters Standby mode and the Data In-

puts/Outputs pins are placed in the high-imped-

ance state. To reduce the Supply Current to the

Standby Supply Current, I

, Chip Enable should

CC2

be held within V ± 0.2V. For the Standby current

level see Table 9, DC Characteristics.

During program or erase operations the memory

will continue to use the Program/Erase Supply

CC

The commands are summarized in Table 4, Com-

mands. Refer to Table 4 in conjunction with the

text descriptions below.

Read/Reset Command. The Read/Reset com-

mand returns the memory to its Read mode where

it behaves like a ROM or EPROM. It also resets

the errors in the Status Register. Either one or

three Bus Write operations can be used to issue

the Read/Reset command.

If the Read/Reset command is issued during a

Chip Erase operation the memory will take about

10µs to abort the Chip Erase. During the abort pe-

riod no valid data can be read from the memory.

Issuing a Read/Reset command during a Chip

Erase operation will leave invalid data in the mem-

ory.

Auto Select Command. The Auto Select com-

mand is used to read the Manufacturer Code and

the Device Code. Three consecutive Bus Write op-

erations are required to issue the Auto Select com-

mand. Once the Auto Select command is issued

the memory remains in Auto Select mode until an-

other command is issued.

Current, I

, for Program or Erase operations un-

CC3

til the operation completes.

Automatic Standby. If CMOS levels (V ± 0.2V)

CC

are used to drive the bus and the bus is inactive for

150ns or more the memory enters Automatic

Standby where the internal Supply Current is re-

duced to the Standby Supply Current, I

. The

CC2

Data Inputs/Outputs will still output data if a Bus

Read operation is in progress.

Special Bus Operations

Additional bus operations can be performed to

read the Electronic Signature. These bus opera-

tions are intended for use by programming equip-

ment and are not usually used in applications.

They require V to be applied to some pins.

ID

Electronic Signature. The memory has two

codes, the manufacturer code and the device

code, that can be read to identify the memory.

These codes can be read by applying the signals

listed in Table 3, Bus Operations.

4/16

M29W512B

Table 4. Commands

Command

Bus Write Operations

3rd 4th

1st

2nd

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

1

3

4

3

X

F0

AA

Read/Reset

555

2AA

55

X

F0

90

A0

20

Auto Select

Program

555

PA

PD

AA

Unlock Bypass

Program

2

X

A0

PA

PD

Unlock Bypass Reset

Chip Erase

2

6

X

90

X

00

55

555

AA

2AA

555

80

555

2AA

55

555

10

Note: X Don’t Care, PA Program Address, PD Program Data.

All values in the table are in hexadecimal.

The Command Interface only uses address bits A0-A10 to verify the commands, the upper address bits are Don’t Care.

Read/Reset. After a Read/Reset command, read the memory as normal until another command is issued.

Auto Select. After an Auto Select command, read Manufacturer ID or Device ID.

Program, Unlock Bypass Program, Chip Erase. After these commands read the Status Register until the Program/Erase Controller com-

pletes and the memory returns to Read Mode.

Unlock Bypass. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.

Unlock Bypass Reset. After the Unlock Bypass Reset command read the memory as normal until another command is issued.

After the program operation has completed the

From the Auto Select mode the Manufacturer

memory will return to the Read mode, unless an

Code can be read using a Bus Read operation

error has occurred. When an error occurs the

with A0 = V and A1 = V . The other address bits

IL

memory will continue to output the Status Regis-

ter. A Read/Reset command must be issued to re-

set the error condition and return to Read mode.

Note that the Program command cannot change a

bit set at ’0’ back to ’1’ and attempting to do so will

cause an error. The Chip Erase command must be

used to set all the bits in the memory from ’0’ to ’1’.

Unlock Bypass Command. The Unlock Bypass

command is used in conjunction with the Unlock

Bypass Program command to program the memo-

ry. When the access time to the device is long (as

with some EPROM programmers) considerable

time saving can be made by using these com-

mands. Three Bus Write operations are required

to issue the Unlock Bypass command.

Once the Unlock Bypass command has been is-

sued the memory will only accept the Unlock By-

pass Program command and the Unlock Bypass

Reset command. The memory can be read as if in

Read mode.

may be set to either V or V . The Manufacturer

IL

IH

Code for STMicroelectronics is 20h.

The Device Code can be read using a Bus Read

operation with A0 = V and A1 = V . The other

IH

IL

address bits may be set to either V or V . The

IL

IH

Device Code for the M29W512B is 27h.

Program Command. The Program command

can be used to program a value to one address in

the memory array at a time. The command re-

quires four Bus Write operations, the final write op-

eration latches the address and data in the internal

state machine and starts the Program/Erase Con-

troller.

During the program operation the memory will ig-

nore all commands. It is not possible to issue any

command to abort or pause the operation. Typical

program times are given in Table 5. Bus Read op-

erations during the program operation will output

the Status Register on the Data Inputs/Outputs.

See the section on the Status Register for more

details.

5/16

M29W512B

Table 5. Program, Erase Times and Program, Erase Endurance Cycles

(T = 0 to 70°C)

A

Typical after

(1)

Parameter

Min

Max

Unit

Typ

(1)

100k W/E Cycles

Chip Erase (All bits in the memory set to ‘0’)

Chip Erase

0.5

1

sec

1

6

200

4

Program

10

0.7

µs

Chip Program

0.7

sec

Program/Erase Cycles

100,000

cycles

Note: 1. T = 25°C, V = 3.3V.

A

CC

Unlock Bypass Program Command. The Un-

lock Bypass Program command can be used to

program one address in memory at a time. The

command requires two Bus Write operations, the

final write operation latches the address and data

in the internal state machine and starts the Pro-

gram/Erase Controller.

The Program operation using the Unlock Bypass

Program command behaves identically to the Pro-

gram operation using the Program command. The

operation cannot be aborted and the Status Reg-

ister is read. Errors must be reset using the Read/

Reset command, which leaves the device in Un-

lock Bypass Mode. See the Program command for

details on the behavior.

Unlock Bypass Reset Command. The Unlock

Bypass Reset command can be used to return to

Read/Reset mode from Unlock Bypass Mode.

Two Bus Write operations are required to issue the

Unlock Bypass Reset command.

Chip Erase Command. The Chip Erase com-

mand can be used to erase the memory. Six Bus

Write operations are required to issue the Chip

Erase Command and start the Program/Erase

Controller.

All Bus Read operations during the Chip Erase op-

eration will output the Status Register on the Data

Inputs/Outputs. See the section on the Status

Register for more details. Typical chip erase times

are given in Table 5.

After the Chip Erase operation has completed the

memory will return to the Read Mode, unless an

error has occurred. When an error occurs the

memory will continue to output the Status Regis-

ter. A Read/Reset command must be issued to re-

set the error condition and return to Read Mode.

STATUS REGISTER

Bus Read operations from any address always

read the Status Register during Program and

Erase operations.

The bits in the Status Register are summarized in

Table 6, Status Register Bits.

Data Polling Bit (DQ7). The Data Polling Bit can

be used to identify whether the Program/Erase

Controller has successfully completed its opera-

tion. The Data Polling Bit is output on DQ7 when

the Status Register is read.

During Program operations the Data Polling Bit

outputs the complement of the bit being pro-

grammed to DQ7. After successful completion of

the Program operation the memory returns to

Read mode and Bus Read operations from the ad-

dress just programmed output DQ7, not its com-

plement.

During Erase operations the Data Polling Bit out-

puts ’0’, the complement of the erased state of

DQ7. After successful completion of the Erase op-

eration the memory returns to Read Mode.

Figure 3, Data Polling Flowchart, gives an exam-

ple of how to use the Data Polling Bit. A Valid Ad-

dress is the address being programmed or any

address while erasing the chip.

Toggle Bit (DQ6). The Toggle Bit can be used to

identify whether the Program/Erase Controller has

successfully completed its operation. The Toggle

Bit is output on DQ6 when the Status Register is

read.

During Program and Erase operations the Toggle

Bit changes from ’0’ to ’1’ to ’0’, etc., with succes-

sive Bus Read operations at any address. After

successful completion of the operation the memo-

ry returns to Read mode.

The Chip Erase command sets all of the bits in the

memory to ’1’. All previous data is lost.

Figure 4, Data Toggle Flowchart, gives an exam-

ple of how to use the Data Toggle Bit.

6/16

M29W512B

Table 6. Status Register Bits

Operation

Address

DQ7

0

DQ6

DQ5

Program

Any Address

Toggle

0

1

0

1

Program Error

Chip Erase

Erase Error

0

Note: Unspecified data bits should be ignored.

Figure 3. Data Polling Flowchart

Figure 4. Data Toggle Flowchart

START

READ

DQ5 & DQ6

READ DQ5 & DQ7

at VALID ADDRESS

DQ6

NO

=

DQ7

=

DATA

YES

TOGGLE

YES

NO

DQ5

= 1

DQ5

= 1

YES

READ DQ6

READ DQ7

DQ6

=

NO

DQ7

=

DATA

YES

TOGGLE

YES

FAIL

NO

PASS

FAIL

PASS

AI01370

AI01369

Error Bit (DQ5). The Error Bit can be used to

identify errors detected by the Program/Erase

Controller. The Error Bit is set to ’1’ when a Pro-

gram or Chip Erase operation fails to write the cor-

rect data to the memory. If the Error Bit is set a

Read/Reset command must be issued before oth-

er commands are issued. The Error bit is output on

DQ5 when the Status Register is read.

Note that the Program command cannot change a

bit set at ’0’ back to ’1’ and attempting to do so will

cause an error. The Chip Erase command must be

used to set all the bits the memory from ’0’ to ’1’.

7/16

M29W512B

Table 7. AC Measurement Conditions

Parameter

M29W512B

55

3.0 to 3.6V

30pF

70 / 90 / 120

2.7 to 3.6V

30pF

V

CC

Supply Voltage

Load Capacitance (C )

L

Input Rise and Fall Times

≤ 10ns

0 to 3V

1.5V

≤ 10ns

Input Pulse Voltages

0 to 3V

1.5V

Input and Output Timing Ref. Voltages

Figure 6. AC Testing Load Circuit

Figure 5. AC Testing Input Output Waveform

0.8V

1N914

3V

1.5V

0V

3.3kΩ

AI01417

DEVICE

UNDER

TEST

OUT

C

= 30pF

L

C

includes JIG capacitance

AI02978

L

Table 8. Capacitance

(T = 25 °C, f = 1 MHz)

A

Symbol

Parameter

Input Capacitance

Output Capacitance

Test Condition

Min

Max

6

Unit

pF

C

V

= 0V

IN

C

OUT

V

OUT

12

pF

Note: Sampled only, not 100% tested.

8/16

M29W512B

Table 9. DC Characteristics

(T = 0 to 70°C)

A

Symbol

Parameter

Input Leakage Current

Output Leakage Current

Supply Current (Read)

Supply Current (Standby)

Test Condition

Min

Max

Unit

µA

I

0V ≤ V ≤ V

±1

LI

IN

CC

I

LO

0V ≤ V

≤ V

OUT CC

µA

I

E = V , G = V , f = 6MHz

IL IH

10

mA

µA

CC1

I

E = V ± 0.2V

100

CC2

CC

Program/Erase

Controller active

(1)

Supply Current (Program/Erase)

20

mA

I

CC3

V

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Identification Voltage

Identification Current

–0.5

2

0.8

V

IL

V

+ 0.5

IH

CC

I

= 1.8mA

OL

0.45

V

OL

OH

V

I

= –100µA

V

– 0.4

V

OH

CC

V

ID

11.5

1.8

12.5

100

V

I

A9 = V

µA

ID

Program/Erase Lockout Supply

Voltage

(1)

2.3

V

LKO

Note: 1. Sampled only, not 100% tested.

9/16

M29W512B

Table 10. Read AC Characteristics

(TA = 0 to 70°C)

M29W512B

70

Symbol

Alt

Parameter

Test Condition

Unit

55

90 / 120

E = V ,

Address Valid to Next Address

Valid

IL

t

Min

55

70

90

ns

AVAV

RC

G = V

IL

E = V ,

IL

t

ACC

Address Valid to Output Valid

Max

55

90

AVQV

G = V

E = V

IL

Chip Enable Low to Output

Transition

(1)

t

Min

Max

Min

0

55

0

70

0

90

0

ns

t

LZ

ELQX

t

Chip Enable Low to Output Valid

ELQV

CE

Output Enable Low to Output

Transition

(1)

t

OLZ

IL

GLQX

t

E = V

Output Enable Low to Output Valid

Chip Enable High to Output Hi-Z

Output Enable High to Output Hi-Z

Max

30

20

30

25

35

30

ns

GLQV

OE

(1)

t

G = V

t

HZ

DF

IL

EHQZ

(1)

t

E = V

t

GHQZ

t

Chip Enable, Output Enable or

Address Transition to Output

Transition

EHQX

t

Min

0

ns

GHQX

OH

t

AXQX

Note: 1. Sampled only, not 100% tested.

Figure 7. Read Mode AC Waveforms

tAVAV

VALID

A0-A15

tAVQV

tAXQX

E

tELQV

tELQX

tEHQX

tEHQZ

G

tGLQX

tGLQV

tGHQX

tGHQZ

VALID

DQ0-DQ7

AI02977

10/16

M29W512B

Table 11. Write AC Characteristics, Write Enable Controlled

(T = 0 to 70 °C)

A

M29W512B

Symbol

Alt

Parameter

Unit

55

0

70

0

90 / 120

t

WC

Address Valid to Next Address Valid

Chip Enable Low to Write Enable Low

Write Enable Low to Write Enable High

Input Valid to Write Enable High

Min

90

0

ns

µs

AVAV

t

CS

ELWL

t

40

25

0

45

30

0

45

0

WLWH

WP

t

DVWH

DS

DH

CH

t

Write Enable High to Input Transition

Write Enable High to Chip Enable High

Write Enable High to Write Enable Low

Address Valid to Write Enable Low

Write Enable Low to Address Transition

Output Enable High to Write Enable Low

Write Enable High to Output Enable Low

WHDX

t

0

WHEH

t

WPH

30

0

30

0

30

0

WHWL

t

AS

AVWL

t

40

0

45

0

45

0

WLAX

AH

t

GHWL

t

OEH

0

WHGL

t

V

High to Chip Enable Low

CC

50

VCHEL

VCS

Figure 8. Write AC Waveforms, Write Enable Controlled

tAVAV

A0-A15

VALID

tWLAX

tAVWL

tWHEH

tWHGL

E

tELWL

G

W

tGHWL

tWLWH

tWHWL

tWHDX

tDVWH

VALID

DQ0-DQ7

V

CC

tVCHEL

AI02757

11/16

M29W512B

Table 12. Write AC Characteristics, Chip Enable Controlled

(T = 0 to 70 °C)

A

M29W512B

Unit

Symbol

Alt

Parameter

55

0

70

0

90 / 120

t

WC

Address Valid to Next Address Valid

Write Enable Low to Chip Enable Low

Chip Enable Low to Chip Enable High

Input Valid to Chip Enable High

Min

90

0

ns

µs

AVAV

t

WS

WLEL

t

40

25

0

45

30

0

45

0

ELEH

CP

DS

t

DVEH

t

Chip Enable High to Input Transition

Chip Enable High to Write Enable High

Chip Enable High to Chip Enable Low

Address Valid to Chip Enable Low

Chip Enable Low to Address Transition

Output Enable High Chip Enable Low

Chip Enable High to Output Enable Low

EHDX

DH

t

WH

0

EHWH

t

30

0

30

0

30

0

EHEL

CPH

t

AS

AVEL

t

40

0

45

0

45

0

ELAX

AH

t

GHEL

t

0

EHGL

OEH

t

V

High to Write Enable Low

CC

50

VCHWL

VCS

Figure 9. Write AC Waveforms, Chip Enable Controlled

tAVAV

A0-A15

VALID

tELAX

tAVEL

tEHWH

tEHGL

W

G

E

tWLEL

tGHEL

tELEH

tEHEL

tEHDX

tDVEH

VALID

DQ0-DQ7

V

CC

tVCHWL

AI02758

12/16

M29W512B

Table 13. Ordering Information Scheme

Example:

M29W512B

70 NZ

1

T

Device Type

M29

Operating Voltage

W = V = 2.7 to 3.6V

CC

Device Function

512B = 512 Kbit (64Kb x8), Bulk

Speed

55 = 55 ns

70 = 70 ns

90 = 90 ns

120 = 120 ns

Package

NZ = TSOP32: 8 x 14 mm

K = PLCC32

Temperature Range

1 = 0 to 70 °C

Option

T = Tape & Reel Packing

Note: The last two characters of the ordering code may be replaced by a letter code for preprogrammed

parts, otherwise devices are shipped from the factory with the memory content erased (to FFh).

For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-

vice, please contact the ST Sales Office nearest to you.

13/16

M29W512B

Table 14. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 14mm, Package Mechanical Data

mm

Min

inches

Min

Symbol

Typ

Max

1.20

0.15

1.05

0.27

0.21

14.20

12.50

8.10

–

Typ

Max

0.047

0.006

0.041

0.011

0.008

0.559

0.492

0.319

–

A

A1

A2

B

0.05

0.95

0.17

0.10

13.80

12.30

7.90

–

0.002

0.037

0.007

0.004

0.543

0.484

0.311

–

C

D

D1

E

e

0.50

0.020

L

0.50

0°

0.70

5°

0.020

0°

0.028

5°

α

N

32

CP

0.10

0.004

Figure 10. TSOP32 - 32 lead Plastic Thin Small Outline, 8 x 14mm, Package Outline

A2

1

N

e

E

B

N/2

D1

D

A

CP

DIE

C

TSOP-a

Drawing is not to scale.

A1

α

L

14/16

M29W512B

Table 15. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Mechanical Data

mm

Min

2.54

1.52

inches

Symbol

Typ

Max

3.56

2.41

0.38

0.53

0.81

12.57

11.56

10.92

15.11

14.10

13.46

–

Typ

Min

Max

0.140

0.095

0.015

0.021

0.032

0.495

0.455

0.430

0.595

0.555

0.530

–

A

A1

A2

B

0.100

0.060

0.33

0.66

12.32

11.35

9.91

14.86

13.89

12.45

–

0.013

0.026

0.485

0.447

0.390

0.585

0.547

0.490

–

B1

D

D1

D2

E

E1

E2

e

1.27

0.050

0.035

F

0.00

–

0.25

–

0.000

–

0.010

–

R

0.89

N

32

Nd

Ne

CP

7

9

0.10

0.004

Figure 11. PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular, Package Outline

D

A1

D1

A2

1 N

B1

e

Ne

E1 E

D2/E2

F

B

0.51 (.020)

1.14 (.045)

Nd

A

R

CP

PLCC

Drawing is not to scale.

15/16

M29W512B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

http://www.st.com

16/16


型号：	M29W512B55K1
厂家：	ST
描述：	64KX8 FLASH 3V PROM, 55ns, PQCC32, PLASTIC, LCC-32 可编程只读存储器内存集成电路
文件：	总16页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M29W512B55K1 [STMICROELECTRONICS]

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