M48T58_10 [STMICROELECTRONICS]
5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPER? SRAM; 5.0 V ， 64千位（ 8 KB ×8 ） TIMEKEEPER ？ SRAM
| 型号： | M48T58_10 |
| 厂家： | 
ST |
| 描述： | 5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPER? SRAM |
| 文件： | 总33页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M48T58
M48T58Y
5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM
Features
■ Integrated, ultra low power SRAM, real-time
clock, power-fail control circuit and battery
™
■ BYTEWIDE RAM-like clock access
28
■ BCD coded year, month, day, date, hours,
1
minutes, and seconds
PCDIP28 (PC)
Battery/crystal
CAPHAT™
■ Frequency test output for real-time clock
■ Automatic power-fail chip deselect and write
protection
■ Write protect voltages
(V
= power-fail deselect voltage):
PFD
®
SNAPHAT (SH)
– M48T58: V = 4.75 to 5.5 V
CC
Battery/crystal
4.5 V ≤ V
≤ 4.75 V
PFD
– M48T58Y: V = 4.5 to 5.5 V
CC
4.2 V ≤ V
≤ 4.5 V
PFD
■ Self-contained battery and crystal in the
™
CAPHAT DIP package
■ Packaging includes a 28-lead SOIC and
®
SNAPHAT top (to be ordered separately)
28
1
■ SOIC package provides direct connection for a
snaphat housing containing the battery and
crystal
SOH28 (MH)
■ Pin and function compatible with JEDEC
standard 8 Kb x 8 SRAMs
■ RoHS compliant
– Lead-free second level interconnect
August 2010
Doc ID 2412 Rev 7
1/33
www.st.com
1
Contents
M48T58, M48T58Y
Contents
1
2
3
4
5
6
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Operation modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data retention mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Clock operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1
6.2
6.3
6.4
6.5
6.6
6.7
Reading the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Setting the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Stopping and starting the oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Calibrating the clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Battery low flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Century bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 20
7
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Environmental information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
8
9
10
11
12
2/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
READ mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
WRITE mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Register map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Power down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Power down/up trip points DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package mech. data . . . . . . . . . . . . . 25
®
SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT , package mech.
data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
®
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
SH – 4-pin SNAPHAT housing for 48 mAh battery & crystal, package mech. data . . . . . 27
®
SH – 4-pin SNAPHAT housing for 120 mAh battery & crystal, package mech. data . . . . 28
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SNAPHAT battery table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
®
Doc ID 2412 Rev 7
3/33
List of figures
M48T58, M48T58Y
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DIP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SOIC connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
READ mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
WRITE enable controlled, WRITE AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Chip enable controlled, WRITE AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Crystal accuracy across temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Clock calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 10. Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 11. AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 12. Power down/up mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 13. PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package outline . . . . . . . . . . . . . . . . . 25
®
Figure 14. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT , package outline. . . 26
®
Figure 15. SH – 4-pin SNAPHAT housing for 48 mAh battery & crystal, pack. outline . . . . . . . . . . . 27
®
Figure 16. SH – 4-pin SNAPHAT housing for 120 mAh battery & crystal, package outline. . . . . . . . 28
Figure 17. Recycling symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
4/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Description
1
Description
®
The M48T58/Y TIMEKEEPER RAM is a 8 Kb x 8 non-volatile static RAM and real-time
clock. The monolithic chip is available in two special packages to provide a highly integrated
battery-backed memory and real-time clock solution.
The M48T58/Y is a non-volatile pin and function equivalent to any JEDEC standard
8b Kb x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets,
providing the non-volatility of PROMs without any requirement for special WRITE timing or
limitations on the number of WRITEs that can be performed.
™
The 28-pin, 600 mil DIP CAPHAT houses the M48T58/Y silicon with a quartz crystal and a
long life lithium button cell in a single package.
The 28-pin, 330 mil SOIC provides sockets with gold plated contacts at both ends for direct
®
connection to a separate SNAPHAT housing containing the battery and crystal. The
unique design allows the SNAPHAT battery package to be mounted on top of the SOIC
package after the completion of the surface mount process. Insertion of the SNAPHAT
housing after reflow prevents potential battery and crystal damage due to the high
temperatures required for device surface-mounting. The SNAPHAT housing is keyed to
prevent reverse insertion. The SOIC and battery/crystal packages are shipped separately in
plastic anti-static tubes or in tape & reel form.
For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is “M4T28-
BR12SH”.
Figure 1.
Logic diagram
V
CC
13
8
A0-A12
DQ0-DQ7
FT
W
E1
E2
G
M48T58
M48T58Y
V
SS
AI01374B
Doc ID 2412 Rev 7
5/33
Description
M48T58, M48T58Y
Table 1.
Signal names
A0-A12
Address inputs
DQ0-DQ7
Data inputs / outputs
Frequency test output (open drain)
Chip enable 1
FT
E1
E2
G
Chip enable 2
Output enable
W
WRITE enable
VCC
VSS
Supply voltage
Ground
Figure 2.
DIP connections
FT
A12
A7
1
2
3
4
5
6
7
8
9
28
V
CC
W
27
26 E2
25 A8
24 A9
23 A11
A6
A5
A4
A3
22
G
M48T58
M48T58Y
A2
21 A10
20 E1
A1
A0 10
DQ0 11
DQ1 12
DQ2 13
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
V
14
SS
AI01375B
Figure 3.
SOIC connections
FT
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
W
A12
A7
2
3
E2
A6
4
A8
A5
5
A9
A4
6
A11
G
A3
7
M48T58Y
A2
8
A10
E1
A1
9
A0
10
11
12
13
14
DQ7
DQ6
DQ5
DQ4
DQ3
DQ0
DQ1
DQ2
V
SS
AI01376B
6/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Figure 4. Block diagram
Description
FT
OSCILLATOR AND
CLOCK CHAIN
8 x 8 BiPORT
SRAM ARRAY
32,768 Hz
CRYSTAL
A0-A12
POWER
DQ0-DQ7
8184 x 8
SRAM ARRAY
LITHIUM
CELL
E1
E2
W
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
V
PFD
G
V
V
CC
SS
AI01377C
Doc ID 2412 Rev 7
7/33
Operation modes
M48T58, M48T58Y
2
Operation modes
As Figure 4 on page 7 shows, the static memory array and the quartz controlled clock
oscillator of the M48T58/Y are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with addresses 1FF8h-1FFFh. The clock
locations contain the century, year, month, date, day, hour, minute, and second in 24 hour
BCD format (except for the century). Corrections for 28, 29 (leap year - valid until 2100), 30,
and 31 day months are made automatically. Byte 1FF8h is the clock control register. This
byte controls user access to the clock information and also stores the clock calibration
setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/write memory cells. The M48T58/Y includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T58/Y also has its own power-fail detect circuit. The control circuitry constantly
monitors the single 5 V supply for an out-of-tolerance condition. When V is out of
CC
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V . As V falls below the
CC
CC
battery backup switchover voltage (V ), the control circuitry connects the battery which
SO
maintains data and clock operation until valid power returns.
Table 2.
Mode
Operating modes
VCC
E1
E2
G
W
DQ0-DQ7
Power
Deselect
Deselect
WRITE
READ
VIH
X
X
X
X
X
High Z
High Z
DIN
Standby
Standby
Active
VIL
VIH
VIH
VIH
X
4.75 to 5.5 V
or
VIL
VIL
VIL
X
VIL
VIH
VIH
4.5 to 5.5 V
VIL
VIH
DOUT
High Z
Active
READ
Active
VSO to VPFD
(min)(1)
Deselect
Deselect
X
X
X
X
X
X
X
X
High Z
High Z
CMOS standby
(1)
≤ VSO
Battery backup mode
1. See Table 11 on page 24 for details.
Note:
X = V or V ; V = Battery backup switchover voltage.
IH IL SO
8/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
READ mode
3
READ mode
The M48T58/Y is in the READ mode whenever W (WRITE enable) is high, E1 (chip enable
1) is low, and E2 (chip enable 2) is high. The unique address specified by the 13 address
inputs defines which one of the 8,192 bytes of data is to be accessed. Valid data will be
available at the data I/O pins within address access time (t
) after the last address input
AVQV
signal is stable, providing that the E1, E2, and G access times are also satisfied. If the E1,
E2 and G access times are not met, valid data will be available after the latter of the chip
enable access times (t
or t
) or output enable access time (t
).
E1LQV
E2HQV
GLQV
The state of the eight three-state data I/O signals is controlled by E1, E2 and G. If the
outputs are activated before t , the data lines will be driven to an indeterminate state
AVQV
until t
. If the address inputs are changed while E1, E2 and G remain active, output data
AVQV
will remain valid for output data hold time (t
address access.
) but will go indeterminate until the next
AXQX
Figure 5.
READ mode AC waveforms
tAVAV
A0-A12
VALID
tAVQV
tE1LQV
tAXQX
tE1HQZ
E1
tE1LQX
tE2HQV
tE2LQZ
E2
tE2HQX
tGLQV
tGHQZ
G
tGLQX
DQ0-DQ7
VALID
AI00962
Note:
WRITE enable (W) = high.
Doc ID 2412 Rev 7
9/33
READ mode
M48T58, M48T58Y
Table 3.
Symbol
READ mode AC characteristics
Parameter(1)
M48T58/Y
Unit
Max
Min
tAVAV
tAVQV
READ cycle time
70
ns
Address valid to output valid
70
70
70
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tE1LQV Chip enable 1 low to output valid
tE2HQV Chip enable 2 high to output valid
tGLQV
Output enable low to output valid
Chip enable 1 low to output transition
Chip enable 2 high to output transition
Output enable low to output transition
Chip enable 1 high to output Hi-Z
Chip enable 2 low to output Hi-Z
Output enable high to output Hi-Z
Address transition to output transition
(2)
tE1LQX
5
5
5
(2)
tE2HQX
(2)
(2)
tGLQX
tE1HQZ
25
25
25
(2)
tE2LQZ
(2)
tGHQZ
tAXQX
10
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. CL = 5 pF.
10/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
WRITE mode
4
WRITE mode
The M48T58/Y is in the WRITE mode whenever W and E1 are low and E2 is high. The start
of a WRITE is referenced from the latter occurring falling edge of W or E1, or the rising edge
of E2. A WRITE is terminated by the earlier rising edge of W or E1, or the falling edge of E2.
The addresses must be held valid throughout the cycle. E1 or W must return high or E2 low
for a minimum of t
or t
from chip enable or t
from WRITE enable prior to the
E1HAX
E2LAX
WHAX
initiation of another READ or WRITE cycle. Data-in must be valid t
prior to the end of
DVWH
WRITE and remain valid for t
afterward. G should be kept high during WRITE cycles to
WHDX
avoid bus contention; although, if the output bus has been activated by a low on E1 and G
and a high on E2, a low on W will disable the outputs t
after W falls.
WLQZ
Figure 6.
WRITE enable controlled, WRITE AC waveform
tAVAV
VALID
A0-A12
tAVWH
tAVE1L
tWHAX
E1
E2
tAVE2H
tWLWH
tAVWL
W
tWLQZ
tWHQX
tWHDX
DATA INPUT
tDVWH
DQ0-DQ7
AI00963
Doc ID 2412 Rev 7
11/33
WRITE mode
M48T58, M48T58Y
Figure 7.
Chip enable controlled, WRITE AC waveforms
tAVAV
VALID
A0-A12
tAVE1H
tE1LE1H
tAVE1L
tE1HAX
E1
tAVE2L
tE2HE2L
tAVE2H
tE2LAX
E2
tAVWL
W
tE1HDX
tE2LDX
DQ0-DQ7
DATA INPUT
tDVE1H
tDVE2L
AI00964B
12/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Table 4.
WRITE mode
Unit
WRITE mode AC characteristics
Parameter(1)
M48T58/Y
Min Max
Symbol
tAVAV
tAVWL
WRITE cycle time
70
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address valid to WRITE enable low
Address valid to chip enable 1 low
Address valid to chip enable 2 high
WRITE enable pulse width
tAVE1L
tAVE2H
tWLWH
tE1LE1H
tE2HE2L
tWHAX
tE1HAX
tE2LAX
tDVWH
tDVE1H
tDVE2L
tWHDX
tE1HDX
tE2LDX
0
0
50
55
55
0
Chip enable 1 low to chip enable 1 high
Chip enable 2 high to chip enable 2 low
WRITE enable high to address transition
Chip enable 1 high to address transition
Chip enable 2 low to address transition
Input valid to WRITE enable high
Input valid to chip enable 1 high
Input valid to chip enable 2 low
0
0
30
30
30
5
WRITE enable high to input transition
Chip enable 1 high to input transition
Chip enable 2 low to input transition
Write enable low to output Hi-Z
5
5
(2)(3)
tWLQZ
tAVWH
tAVE1H
tAVE2L
25
Address valid to WRITE enable high
Address valid to chip enable 1 high
Address valid to chip enable 2 low
WRITE enable high to output transition
60
60
60
5
(2)(3)
tWHQX
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. CL = 5 pF.
3. If E1 goes low or E2 high simultaneously with W going low, the outputs remain in the high impedance
state.
Doc ID 2412 Rev 7
13/33
Data retention mode
M48T58, M48T58Y
5
Data retention mode
With valid V applied, the M48T58/Y operates as a conventional BYTEWIDE™ static
CC
RAM. Should the supply voltage decay, the RAM will automatically power-fail deselect, write
protecting itself when V falls within the V
(max), V
(min) window. All outputs
CC
PFD
PFD
become high impedance, and all inputs are treated as “don't care.”
Note:
A power failure during a WRITE cycle may corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's content. At voltages below V
(min), the
PFD
user can be assured the memory will be in a write protected state, provided the V fall time
CC
is not less than t . The M48T58/Y may respond to transient noise spikes on V that reach
F
CC
into the deselect window during the time the device is sampling V . Therefore, decoupling
CC
of the power supply lines is recommended.
When V drops below V , the control circuit switches power to the internal battery which
CC
SO
preserves data and powers the clock. The internal button cell will maintain data in the
M48T58/Y for an accumulated period of at least 7 years when V is less than V . As
CC
SO
system power returns and V rises above V , the battery is disconnected, and the power
CC
SO
supply is switched to external V . Write protection continues until V reaches V (min)
CC
CC
PFD
plus t (min). E1 should be kept high or E2 low as V rises past V
(min) to prevent
rec
CC
PFD
inadvertent WRITE cycles prior to system stabilization. Normal RAM operation can resume
after V exceeds V (max).
t
rec
CC
PFD
For more information on battery storage life refer to the application note AN1012.
14/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Clock operations
6
Clock operations
6.1
Reading the clock
®
Updates to the TIMEKEEPER registers (see Table 5) should be halted before clock data is
read to prevent reading data in transition. The BiPORT™ TIMEKEEPER cells in the RAM
array are only data registers and not the actual clock counters, so updating the registers can
be halted without disturbing the clock itself.
Updating is halted when a '1' is written to the READ bit, D6 in the control register 1FF8h. As
long as a '1' remains in that position, updating is halted.
After a halt is issued, the registers reflect the count; that is, the day, date, and the time that
were current at the moment the halt command was issued.
All of the TIMEKEEPER registers are updated simultaneously. A halt will not interrupt an
update in progress. Updating is within a second after the bit is reset to a '0.'
6.2
Setting the clock
Bit D7 of the control register (1FF8h) is the WRITE bit. Setting the WRITE bit to a '1,' like the
®
READ bit, halts updates to the TIMEKEEPER registers. The user can then load them with
the correct day, date, and time data in 24-hour BCD format (see Table 5). Resetting the
WRITE bit to a '0' then transfers the values of all time registers (1FF9h-1FFFh) to the actual
TIMEKEEPER counters and allows normal operation to resume. The bits marked as '0' in
Table 5 on page 16 must be written to '0' to allow for normal TIMEKEEPER and RAM
operation. After the WRITE bit is reset, the next clock update will occur within one second.
See the application note AN923 “TIMEKEEPER Rolling Into the 21st Century” for
information on century rollover.
6.3
Stopping and starting the oscillator
The oscillator may be stopped at any time. If the device is going to spend a significant
amount of time on the shelf, the oscillator can be turned off to minimize current drain on the
battery. The STOP bit is the MSB of the seconds register. Setting it to a '1' stops the
oscillator. The M48T58/Y is shipped from STMicroelectronics with the STOP bit set to a '1.'
When reset to a '0,' the M48T58/Y oscillator starts within 1 second.
Doc ID 2412 Rev 7
15/33
Clock operations
Table 5.
M48T58, M48T58Y
Register map
Data
D4
Function/range
BCD format
Address
D7
D6
D5
D3
D2
D1
Year
D0
1FFFh
1FFEh
1FFDh
1FFCh
1FFBh
1FFAh
1FF9h
1FF8h
10 Years
Year
00-99
01-12
01-31
0-1/1-7
00-23
00-59
00-59
0
BLE
0
0
BL
FT
0
0
10 M
CB
Month
Date
Month
Date
10 date
CEB
0
Day
Century/day
Hours
0
10 hours
Hours
Minutes
Seconds
0
10 minutes
10 seconds
S
Minutes
Seconds
Control
ST
W
R
Calibration
Keys:
S = SIGN bit
FT = FREQUENCY TEST bit
R = READ bit
W = WRITE bit
ST = STOP bit
0 = Must be set to '0'
BLE = Battery low enable bit
BL = Battery low bit (read only)
CEB = Century enable bit
CB = Century bit
Note:
When CEB is set to '1,' CB will toggle from '0' to '1' or from '1' to '0' at the turn of the century
(dependent upon the initial value set).
When CEB is set to '0,' CB will not toggle. The WRITE bit does not need to be set to write to
CEB.
6.4
Calibrating the clock
The M48T58/Y is driven by a quartz-controlled oscillator with a nominal frequency of 32,768
Hz. The devices are tested not to exceed 35 ppm (parts per million) oscillator frequency
error at 25°C, which equates to about 1.53 minutes per month. With the calibration bits
properly set, the accuracy of each M48T58/Y improves to better than +1/–2 ppm at 25°C.
The oscillation rate of any crystal changes with temperature (see Figure 8 on page 18).
Most clock chips compensate for crystal frequency and temperature shift error with
cumbersome “trim” capacitors. The M48T58/Y design, however, employs periodic counter
correction. The calibration circuit adds or subtracts counts from the oscillator divider circuit
at the divide by 256 stage, as shown in Figure 9 on page 18. The number of times pulses
are blanked (subtracted, negative calibration) or split (added, positive calibration) depends
upon the value loaded into the five calibration bits found in the control register. Adding
counts speeds the clock up, subtracting counts slows the clock down.
The calibration byte occupies the five lower order bits (D4-D0) in the control register 1FF8h.
These bits can be set to represent any value between 0 and 31 in binary form. Bit D5 is the
16/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Clock operations
sign bit; '1' indicates positive calibration, '0' indicates negative calibration. Calibration occurs
within a 64 minute cycle. The first 62 minutes in the cycle may, once per minute, have one
second either shortened by 128 or lengthened by 256 oscillator cycles. If a binary '1' is
loaded into the register, only the first 2 minutes in the 64 minute cycle will be modified; if a
binary 6 is loaded, the first 12 will be affected, and so on.
Therefore, each calibration step has the effect of adding 512 or subtracting 256 oscillator
cycles for every 125,829,120 actual oscillator cycles, that is +4.068 or –2.034 ppm of
adjustment per calibration step in the calibration register. Assuming that the oscillator is in
fact running at exactly 32,768 Hz, each of the 31 increments in the calibration byte would
represent +10.7 or –5.35 seconds per month which corresponds to a total range of +5.5 or –
2.75 minutes per month.
Two methods are available for ascertaining how much calibration a given M48T58/Y may
require. The first involves simply setting the clock, letting it run for a month and comparing it
to a known accurate reference (like WWV broadcasts). While that may seem crude, it allows
the designer to give the end user the ability to calibrate his clock as his environment may
require, even after the final product is packaged in a non-user serviceable enclosure. All the
designer has to do is provide a simple utility that accesses the calibration byte.
The second approach is better suited to a manufacturing environment, and involves the use
of some test equipment. When the frequency test (FT) bit (D6 in the day register) is set to a
'1,' and D7 of the seconds register is a '0' (oscillator running), The frequency test (pin 1) will
toggle at 512 Hz. Any deviation from 512 Hz indicates the degree and direction of oscillator
frequency shift at the test temperature. For example, a reading of 512.01024 Hz would
indicate a +20 ppm oscillator frequency error, requiring a –10 (WR001010) to be loaded into
the calibration byte for correction.
The frequency test pin is an open drain output which requires a pull-up resistor for proper
operation. A 500-10 kΩ resistor is recommended in order to control the rise time.
®
For more information on calibration, see application note AN934, “TIMEKEEPER
calibration.”
Doc ID 2412 Rev 7
17/33
Clock operations
Figure 8. Crystal accuracy across temperature
M48T58, M48T58Y
ppm
20
0
-20
-40
-60
-80
2
ΔF
F
ppm
C2
= -0.038
(T - T0)
10%
T0 = 25 °C
-100
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
°C
AI02124
Figure 9.
Clock calibration
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI00594B
18/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Clock operations
6.5
Battery low flag
The M48T58/Y automatically performs periodic battery voltage monitoring upon power-up.
The battery low flag (BL), bit D6 of the flags register 1FFDh, will be asserted high if the
®
internal or SNAPHAT battery is found to be less than approximately 2.5 V and the battery
low enable (BLE) bit has been previously set to '1.' The BL flag will remain active until
completion of battery replacement and subsequent battery low monitoring tests.
If a battery low is generated during a power-up sequence, this indicates that the battery
voltage is below 2.5 V (approximately), which may be insufficient to maintain data integrity.
Data should be considered suspect and verified as correct. A fresh battery should be
installed.
The SNAPHAT top may be replaced while V is applied to the device.
CC
®
Note:
Note:
This will cause the clock to lose time during the interval the SNAPHAT battery/crystal top is
disconnected.
Battery monitoring is a useful technique only when performed periodically. The M48T58/Y
only monitors the battery when a nominal V is applied to the device. Thus applications
CC
which require extensive durations in the battery back-up mode should be powered-up
periodically (at least once every few months) in order for this technique to be beneficial.
Additionally, if a battery low is indicated, data integrity should be verified upon power-up via
a checksum or other technique.
6.6
Century bit
Bit D5 and D4 of clock register 1FFCh contain the CENTURY ENABLE bit (CEB) and the
CENTURY bit (CB). Setting CEB to a '1' will cause CB to toggle, either from a '0' to '1' or
from '1' to '0' at the turn of the century (depending upon its initial state). If CEB is set to a '0,'
CB will not toggle.
Note:
The WRITE bit must be set in order to write to the CENTURY bit.
Doc ID 2412 Rev 7
19/33
Clock operations
M48T58, M48T58Y
6.7
VCC noise and negative going transients
I
transients, including those produced by output switching, can produce voltage
CC
fluctuations, resulting in spikes on the V bus. These transients can be reduced if
CC
capacitors are used to store energy which stabilizes the V bus. The energy stored in the
CC
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure 10) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V that drive it to values below V by as much as
CC
SS
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V to V (cathode connected to V , anode to V ). Schottky diode
CC
SS
CC
SS
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
V
CC
V
CC
0.1µF
DEVICE
V
SS
AI02169
20/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Maximum ratings
7
Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TA
Ambient operating temperature
Storage temperature (VCC off, oscillator off)
Lead solder temperature for 10 seconds
Input or output voltages
0 to 70
–40 to 85
260
°C
°C
°C
V
TSTG
(1)(2)(3)
TSLD
VIO
VCC
IO
–0.3 to 7
–0.3 to 7
20
Supply voltage
V
Output current
mA
W
PD
Power dissipation
1
1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds. In order to
protect the lithium battery, preheat temperatures must be limited such that the battery temperature does
not exceed +85 °C. Furthermore, the devices shall not be exposed to IR reflow.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260°C (the time above
255°C must not exceed 30 seconds).
Caution:
Caution:
Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
®
Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
Doc ID 2412 Rev 7
21/33
DC and AC parameters
M48T58, M48T58Y
8
DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in Table 7.
Designers should check that the operating conditions in their projects match the
measurement conditions when using the quoted parameters.
Table 7.
Operating and AC measurement conditions
Parameter
Supply voltage (VCC
M48T58
M48T58Y
Unit
)
4.75 to 5.5
0 to 70
100
4.5 to 5.5
0 to 70
100
V
°C
pF
ns
V
Ambient operating temperature (TA)
Load capacitance (CL)
Input rise and fall times
≤ 5
≤ 5
Input pulse voltages
0 to 3
1.5
0 to 3
1.5
Input and output timing ref. voltages
V
Note:
Output Hi-Z is defined as the point where data is no longer driven.
Figure 11. AC measurement load circuit
5V
1.9kΩ
DEVICE
UNDER
OUT
TEST
1kΩ
C
= 100pF or 5pF
L
C
includes JIG capacitance
L
AI01030
Table 8.
Symbol
Capacitance
Parameter(1)(2)
Min
Max
Unit
CIN
Input capacitance
Output capacitance
-
-
10
10
pF
pF
(3)
COUT
1. Effective capacitance measured with power supply at 5 V; sampled only, not 100% tested.
2. At 25 °C, f = 1 MHz.
3. Outputs deselected.
22/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
DC and AC parameters
Table 9.
Symbol
ILI
DC characteristics
M48T58
Max
M48T58Y
Unit
Parameter
Test condition(1)
Min
Min
Max
Input leakage current
Output leakage current
Supply current
0 V ≤ VIN ≤ VCC
0 V ≤ VOUT ≤ VCC
Outputs open
1
1
1
1
µA
µA
(2)
ILO
ICC
50
50
mA
E1 = VIH
E2 = VIO
ICC1
Supply current (standby) TTL
3
3
3
3
mA
mA
E1 = VCC – 0.2 V
E2 = VSS + 0.2 V
Supply current (standby)
CMOS
ICC2
VIL
VIH
Input low voltage
–0.3
2.2
0.8
VCC + 0.3
0.4
–0.3
2.2
0.8
VCC + 0.3
0.4
V
V
Input high voltage
Output low voltage
Output low voltage (FT)(3)
Output high voltage
IOL = 2.1 mA
IOL = 10 mA
IOH = –1 mA
VOL
VOH
0.4
0.4
V
V
2.4
2.4
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted).
2. Outputs deselected.
3. The FT pin is open drain.
Figure 12. Power down/up mode AC waveforms
V
CC
V
V
V
(max)
(min)
PFD
PFD
SO
tF
tR
tFB
tRB
tPD
tDR
trec
RECOGNIZED
RECOGNIZED
INPUTS
DON'T CARE
HIGH-Z
OUTPUTS
VALID
VALID
(PER CONTROL INPUT)
(PER CONTROL INPUT)
AI01168C
Doc ID 2412 Rev 7
23/33
DC and AC parameters
Table 10. Power down/up AC characteristics
M48T58, M48T58Y
Symbol
Parameter(1)
Min
Max
Unit
tPD
E1 or W at VIH or E2 at VIL before power down
VPFD (max) to VPFD (min) VCC fall time
0
300
10
10
10
1
µs
µs
µs
µs
µs
µs
ms
(2)
tF
M48T58
M48T58Y
(3)
tFB
VPFD (min) to VSS VCC fall time
tR
VPFD (min) to VPFD (max) VCC rise time
VSS to VPFD (min) VCC rise time
VPFD (max) to inputs recognized
tRB
trec
40
200
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring
until 200 µs after VCC passes VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Table 11. Power down/up trip points DC characteristics
Symbol
Parameter(1)(2)
Min
Typ
Max
Unit
M48T58
4.5
4.2
4.6
4.35
3.0
4.75
4.5
V
V
VPFD Power-fail deselect voltage
M48T58Y
VSO
Battery backup switchover voltage
Expected data retention time
V
(3)
tDR
7
Years
1. Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where
noted).
2. All voltages referenced to VSS
3. At 25 °C, VCC = 0 V.
.
24/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Package mechanical data
9
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Figure 13. PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package outline
A2
A
L
A1
e1
C
B1
B
eA
e3
D
N
1
E
PCDIP
Note:
Drawing is not to scale.
Table 12. PCDIP28 – 28-pin plastic DIP, battery CAPHAT™, package mech. data
mm
inches
Symb
Typ
Min
Max
Typ
Min
Max
A
A1
A2
B
8.89
0.38
8.38
0.38
1.14
0.20
39.37
17.83
2.29
9.65
0.76
8.89
0.53
1.78
0.31
39.88
18.34
2.79
0.350
0.015
0.330
0.015
0.045
0.008
1.550
0.702
0.090
0.380
0.030
0.350
0.021
0.070
0.012
1.570
0.722
0.110
B1
C
D
E
e1
e3
eA
L
33.02
1.3
15.24
3.05
28
16.00
3.81
0.600
0.120
28
0.630
0.150
N
Doc ID 2412 Rev 7
25/33
Package mechanical data
M48T58, M48T58Y
®
Figure 14. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT ,
package outline
A2
A
C
eB
B
e
CP
D
N
E
H
A1
a
L
1
SOH-A
Note:
Drawing is not to scale.
®
Table 13. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT , package
mech. data
mm
Min
inches
Min
Symb
Typ
Max
Typ
Max
A
A1
A2
B
3.05
0.36
2.69
0.51
0.32
18.49
8.89
–
0.120
0.014
0.106
0.020
0.012
0.728
0.350
–
0.05
2.34
0.36
0.15
17.71
8.23
–
0.002
0.092
0.014
0.006
0.697
0.324
–
C
D
E
e
1.27
0.050
eB
H
3.20
11.51
0.41
0°
3.61
12.70
1.27
8°
0.126
0.453
0.016
0°
0.142
0.500
0.050
8°
L
a
N
28
28
CP
0.10
0.004
26/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Package mechanical data
®
Figure 15. SH – 4-pin SNAPHAT housing for 48 mAh battery & crystal, pack. outline
A2
A1
A
A3
eA
D
B
L
eB
E
SHTK-A
Note:
Drawing is not to scale.
®
Table 14. SH – 4-pin SNAPHAT housing for 48 mAh battery & crystal, package mech.
data
mm
Min
inches
Min
Symb
Typ
Max
Typ
Max
A
A1
A2
A3
B
9.78
7.24
0.385
0.285
0.275
0.015
0.022
0.860
0.590
0.628
0.142
0.090
6.73
6.48
0.265
0.255
6.99
0.38
0.56
21.84
14.99
15.95
3.61
0.46
21.21
14.22
15.55
3.20
0.018
0.835
0.560
0.612
0.126
0.080
D
E
eA
eB
L
2.03
2.29
Doc ID 2412 Rev 7
27/33
Package mechanical data
M48T58, M48T58Y
®
Figure 16. SH – 4-pin SNAPHAT housing for 120 mAh battery & crystal, package
outline
A2
A1
A
A3
eA
D
B
L
eB
E
SHTK-A
Note:
Drawing is not to scale.
®
Table 15. SH – 4-pin SNAPHAT housing for 120 mAh battery & crystal, package
mech. data
mm
Min
inches
Min
Symb
Typ
Max
Typ
Max
A
A1
A2
A3
B
10.54
8.51
8.00
0.38
0.56
21.84
18.03
3.61
2.29
0.415
0.335
0.315
0.015
0.022
0.860
0.710
0.142
0.090
8.00
7.24
0.315
0.285
0.46
21.21
17.27
3.20
0.018
0.835
0.680
0.126
0.080
D
E
eB
L
2.03
28/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Part numbering
10
Part numbering
Table 16. Ordering information scheme
Example:
M48T
58
–70
MH
1
E
Device type
M48T
Supply voltage and write protect voltage
58(1) = VCC = 4.75 to 5.5 V; VPFD = 4.5 to 4.75 V
58Y = VCC = 4.5 to 5.5 V; VPFD = 4.2 to 4.5 V
Speed
–70 = 70 ns
Package
PC = PCDIP28
MH(2) = SOH28
Temperature range
1 = 0 to 70°C
Shipping method
For SOH28:
blank = Tubes (not for new design - use E)
E = Lead-free package (ECOPACK®), tubes
F = Lead-free package (ECOPACK®), tape & reel
TR = Tape & reel (not for new design - use F)
For PCDIP28:
blank = Tubes
1. The M48T58 part is offered with the PCDIP28 (e.g., CAPHAT™) package only.
2. The SOIC package (SOH28) requires the SNAPHAT® battery package which is ordered separately under
the part number “M4TXX-BR12SH” in plastic tube or “M4TXX-BR12SHTR” in Tape & Reel form (see
Table 17).
®
Caution:
Do not place the SNAPHAT battery package “M4TXX-BR12SH” in conductive foam as it
will drain the lithium button-cell battery.
For other options, or for more information on any aspect of this device, please contact the
ST sales office nearest you.
Doc ID 2412 Rev 7
29/33
Part numbering
Table 17. SNAPHAT® battery table
M48T58, M48T58Y
Package
Part number
Description
M4T28-BR12SH
M4T32-BR12SH
Lithium battery (48 mAh) SNAPHAT®
Lithium battery (120 mAh) SNAPHAT®
SH
SH
30/33
Doc ID 2412 Rev 7
M48T58, M48T58Y
Environmental information
11
Environmental information
Figure 17. Recycling symbols
This product contains a non-rechargeable lithium (lithium carbon monofluoride chemistry)
button cell battery fully encapsulated in the final product.
Recycle or dispose of batteries in accordance with the battery manufacturer's instructions
and local/national disposal and recycling regulations.
Please refer to the following web site address for additional information regarding
compliance statements and waste recycling.
Go to www.st.com/rtc, then select "Lithium Battery Recycling" from "Related Topics".
Doc ID 2412 Rev 7
31/33
Revision history
M48T58, M48T58Y
12
Revision history
Table 18. Document revision history
Date
Revision
Changes
Jul-1999
1
First issue
Century bit and battery low flag paragraphs added; power down/up AC
characteristics table and waveforms changed (Table 10, Figure 12)
27-Jul-2000
1.1
04-Jun-2001
31-Jul-2001
20-May-2002
01-Apr-2003
17-Jul-2003
02-Apr-2004
2
2.1
2.2
3
Reformatted; temperature information added (Table 9, 3, 4, 10, 11)
Formatting changes from recent document review findings
Modify reflow time and temperature footnotes (Table 6)
v2.2 template applied; test condition updated (Table 11)
Update “battery low flag” information
3.1
4
Reformatted; update lead-free packaging information (Table 6, 16)
Reformatted; added lead-free second level interconnect information to
cover page and Section 9: Package mechanical data; updated Table 9.
30-Aug-2007
5
UpdatedTable 6, Section 9: Package mechanical data; added Section 11:
Environmental information; minor reformatting.
24-Mar-2009
02-Aug-2010
6
7
Reformatted document; updated Section 7, Table 12.
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