M54HC241D1 [STMICROELECTRONICS]
RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED); 具有抗辐射的八路总线缓冲器3态输出（非反相）
| 型号： | M54HC241D1 |
| 厂家： | 
ST |
| 描述： | RAD-HARD OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED) |
| 文件： | 总11页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HC241
RAD-HARD OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
■
■
■
■
■
■
■
HIGH SPEED:
= 10ns (TYP.) at V
t
= 6V
CC
PD
LOW POWER DISSIPATION:
= 4µA(MAX.) at T =25°C
I
CC
A
HIGH NOISE IMMUNITY:
= V = 28% V (MIN.)
V
NIH
NIL
CC
SYMMETRICAL OUTPUT IMPEDANCE:
|I | = I = 6mA (MIN)
OH
OL
DILC-20
FPC-20
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
WIDE OPERATING VOLTAGE RANGE:
(OPR) = 2V to 6V
V
CC
ORDER CODES
PACKAGE
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 241
FM
EM
■
■
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
DILC
FPC
M54HC241D
M54HC241K
M54HC241D1
M54HC241K1
■
■
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9401-035
Each G and G control inputs governs four BUS
BUFFERs.
This device is designed to be used with 3 state
memory address drivers, etc.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
DESCRIPTION
The 54HC241 is an advanced high-speed CMOS
OCTAL BUS BUFFER (3-STATE) fabricated with
2
silicon gate C MOS technology.
PIN CONNECTION
April 2004
1/10
M54HC241
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
SYMBOL
1G
NAME AND FUNCTION
1
Output Enable Input
2, 4, 6, 8
9, 7, 5, 3
1A1 to 1A4 Data Inputs
2Y1 to 2Y4 Data Outputs
2A1 to 2A4 Data Inputs
11, 13, 15,
17
18, 16, 14,
12
1Y1 to 1Y4 Data Outputs
19
10
20
2G
Output Enable Input
GND
Ground (0V)
V
Positive Supply Voltage
CC
TRUTH TABLE
INPUTS
OUTPUT
1Yn
INPUTS
OUTPUT
2Yn
1G
1An
2G
2An
L
L
L
H
X
L
H
Z
H
H
L
L
H
X
L
H
Z
H
X : Don’t Care
Z : High Impedance
2/10
M54HC241
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
V
V
CC
V
DC Input Voltage
-0.5 to V + 0.5
I
CC
V
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
-0.5 to V + 0.5
V
O
CC
I
± 20
± 20
mA
mA
mA
mA
mW
°C
IK
I
OK
I
± 35
O
I
or I
DC V
or Ground Current
CC
± 70
CC
GND
P
Power Dissipation
420
D
T
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
265
stg
T
°C
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
Supply Voltage
2 to 6
0 to V
V
V
CC
V
Input Voltage
I
CC
V
Output Voltage
0 to V
CC
V
O
T
Operating Temperature
Input Rise and Fall Time
-55 to 125
0 to 1000
0 to 500
0 to 400
°C
ns
ns
ns
op
V
V
V
= 2.0V
= 4.5V
= 6.0V
CC
CC
CC
t , t
r
f
3/10
M54HC241
DC SPECIFICATIONS
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
V
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
IH
V
V
V
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
IL
V
High Level Output
Voltage
I =-20 µA
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
1.9
4.4
OH
O
I =-20 µA
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
O
I =-20 µA
5.9
5.9
V
V
O
I =-6.0 mA
4.18 4.31
4.13
5.63
4.10
5.60
O
I =-7.8 mA
5.68
5.8
0.0
0.0
0.0
O
V
Low Level Output
Voltage
I =20 µA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
OL
O
I =20 µA
O
I =20 µA
0.1
0.1
O
I =6.0 mA
0.17 0.26
0.18 0.26
0.33
0.33
0.40
0.40
O
I =7.8 mA
O
I
Input Leakage
Current
I
V = V or GND
6.0
6.0
6.0
± 0.1
± 0.5
4
± 1
± 5
40
± 1
± 10
80
µA
µA
µA
I
CC
I
High Impedance
Output Leakage
Current
OZ
V = V or V
IL
I
IH
V
= V or GND
CC
O
I
Quiescent Supply
Current
CC
V = V or GND
I
CC
4/10
M54HC241
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6ns)
L
r
f
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
T
= 25°C
Symbol
Parameter
A
V
C
L
(pF)
CC
(V)
t
t
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
25
7
60
12
75
19
90
18
TLH THL
50
ns
ns
ns
ns
ns
ns
6
10
13
15
t
t
t
t
Propagation Delay
Time
36
12
10
51
17
14
48
16
14
63
21
18
32
15
14
90
115
23
135
27
PLH PHL
50
150
50
18
15
20
23
130
26
165
33
195
39
22
28
33
t
High Impedance
Output Enable
Time
125
25
155
31
190
38
PZL PZH
R = 1 KΩ
L
21
25
32
165
33
205
41
250
50
R = 1 KΩ
150
50
L
28
35
43
t
High Impedance
Output Disable
Time
125
25
155
31
190
38
PLZ PHZ
R = 1 KΩ
L
21
26
32
CAPACITIVE CHARACTERISTICS
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
C
Input Capacitance
5.0
5.0
5
10
10
10
pF
pF
IN
Output
Capacitance
C
10
OUT
C
Power Dissipation
Capacitance (note
1)
PD
5.0
33
pF
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= C x V x f + I /8 (per circuit)
CC(opr)
PD CC IN CC
5/10
M54HC241
TEST CIRCUIT
TEST
SWITCH
t
t
t
, t
Open
PLH PHL
, t
V
CC
PZL PLZ
, t
GND
PZH PHZ
C
R
R
= 50pF/150pF or equivalent (includes jig and probe capacitance)
L
1
T
= 1KΩ or equivalent
= Z
of pulse generator (typically 50Ω)
OUT
WAVEFORM 1:PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
6/10
M54HC241
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
7/10
M54HC241
DILC-20 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
a1
a2
B
2.1
3.00
0.63
1.93
0.40
0.20
25.14
7.36
2.71
3.70
1.14
2.23
0.50
0.30
25.65
7.87
0.083
0.118
0.025
0.076
0.016
0.008
0.990
0.290
0.107
0.146
0.045
0.088
0.020
0.012
1.010
0.310
0.88
2.03
0.45
0.254
25.40
7.62
2.54
22.86
7.87
7.49
0.035
0.080
0.018
0.010
1.000
0.300
0.100
0.900
0.310
0.295
b
b1
D
e
e1
e2
e3
F
22.73
7.62
7.29
22.99
8.12
7.70
3.86
11.56
1.40
0.895
0.300
0.287
0.905
0.320
0.303
0.152
0.455
0.055
I
K
11.30
1.14
0.445
0.045
L
1.27
0.050
0016178J
8/10
M54HC241
FPC-20 MECHANICAL DATA
mm.
inch
DIM.
MIN.
9.98
9.98
1.45
0.10
11.30
TYP
10.16
10.16
1.61
MAX.
10.34
10.34
1.78
MIN.
0.393
0.393
0.57
TYP.
0.400
0.400
0.63
MAX.
0.407
0.407
0.070
0.007
0.455
A
B
C
D
E
F
0.127
11.43
1.27
0.18
0.004
0.445
0.005
0.450
0.050
0.017
11.56
G
H
L
0.38
7.24
0.43
0.48
8.16
0.015
0.285
0.960
0.018
0.019
0.320
1.050
0.022
24.46
0.45
26.67
0.55
M
N
O
P
0.50
7.87
1.27
0.18
0.020
0.310
0.050
0.007
1.14
0.10
1.40
0.25
0.045
0.004
0.055
0.010
016032F
9/10
M54HC241
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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