M54HC367K1 [STMICROELECTRONICS]
RAD-HARD HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING; 具有三态输出的非反相RAD- HARD HEX BUS BUFFER
| 型号： | M54HC367K1 |
| 厂家： | 
ST |
| 描述： | RAD-HARD HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING |
| 文件： | 总11页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HC367
RAD-HARD HEX BUS BUFFER
WITH 3 STATE OUTPUT NON INVERTING
■
■
■
■
■
■
■
HIGH SPEED:
= 9ns (TYP.) at V = 6V
t
PD
CC
LOW POWER DISSIPATION:
= 4µA(MAX.) at T =25°C
I
CC
A
HIGH NOISE IMMUNITY:
= V = 28% V (MIN.)
V
NIH
NIL
CC
SYMMETRICAL OUTPUT IMPEDANCE:
|I | = I = 6mA (MIN)
DILC-16
FPC-16
OH
OL
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
ORDER CODES
PACKAGE
WIDE OPERATING VOLTAGE RANGE:
(OPR) = 2V to 6V
V
FM
EM
CC
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 367
DILC
FPC
M54HC367D
M54HC367K
M54HC367D1
M54HC367K1
■
■
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
This device contains six buffers, four buffers are
controlled by an enable input (G1) and the other
two buffers are controlled by the other enable
input (G2); the outputs of each buffer group are
enabled when G1 and/or G2 inputs are held low,
and when held high, these outputs are disabled in
a high-impedance state.
■
■
DEVICE FULLY COMPLIANT WITH
SCC-9401-044
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
DESCRIPTION
The M54HC367 is an high speed CMOS HEX
BUS BUFFER 3-STATE OUTPUTS fabricated
2
with silicon gate C MOS technology.
PIN CONNECTION
Rev. 1
1/11
May 2004
M54HC367
Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N°
SYMBOL
NAME AND FUNCTION
1, 15
G1, G2
3 State Output Enable
Input
2, 4, 6, 10,
12, 14
1A to 6A
1Y to 6Y
GND
Data Inputs
3, 5, 7, 9, 11,
13
Data Outputs
8
Ground (0V)
16
V
Positive Supply Voltage
CC
Table 2: Truth Table
INPUTS
G
OUTPUTS
Yn
An
L
L
L
H
X
L
H
Z
H
X: Don’t Care
Z: High Impedance
2/11
M54HC367
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
V
V
CC
V
DC Input Voltage
-0.5 to V + 0.5
I
CC
V
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
-0.5 to V + 0.5
V
O
CC
I
± 20
± 20
mA
mA
mA
mA
mW
°C
IK
I
OK
I
± 35
O
I
or I
DC V
or Ground Current
CC
± 70
CC
GND
P
Power Dissipation
420
D
T
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
265
stg
T
°C
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
Parameter
Value
Unit
V
Supply Voltage
2 to 6
0 to V
V
V
CC
V
Input Voltage
I
CC
V
Output Voltage
0 to V
CC
V
O
T
Operating Temperature
Input Rise and Fall Time
-55 to 125
0 to 1000
0 to 500
0 to 400
°C
ns
ns
ns
op
V
V
V
= 2.0V
= 4.5V
= 6.0V
CC
CC
CC
t , t
r
f
3/11
M54HC367
Table 5: DC Specifications
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
V
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
IH
V
V
V
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
IL
V
High Level Output
Voltage
I =-20 µA
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
1.9
4.4
OH
O
I =-20 µA
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
O
I =-20 µA
5.9
5.9
V
V
O
I =-6.0 mA
4.18 4.31
4.13
5.63
4.10
5.60
O
I =-7.8 mA
5.68
5.8
0.0
0.0
0.0
O
V
Low Level Output
Voltage
I =20 µA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
OL
O
I =20 µA
O
I =20 µA
0.1
0.1
O
I =6.0 mA
0.17 0.26
0.18 0.26
0.33
0.33
0.40
0.40
O
I =7.8 mA
O
I
Input Leakage
Current
I
V = V or GND
6.0
6.0
6.0
± 0.1
± 0.5
4
± 1
± 5
40
± 1
± 10
80
µA
µA
µA
I
CC
I
High Impedance
Output Leakage
Current
OZ
V = V or V
IL
I
IH
V
= V or GND
CC
O
I
Quiescent Supply
Current
CC
V = V or GND
I
CC
4/11
M54HC367
Table 6: AC Electrical Characteristics (C = 50 pF, Input t = t = 6ns)
L
r
f
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
T
= 25°C
Symbol
Parameter
A
V
C
L
CC
(V)
(pF)
Min. Typ. Max. Min. Max. Min. Max.
t
t
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
25
7
60
12
10
85
17
14
105
21
18
90
18
15
110
22
19
95
19
16
75
15
90
18
TLH THL
50
ns
ns
ns
ns
ns
ns
6
13
15
t
t
t
t
Propagation Delay
Time
30
10
9
105
21
130
26
PLH PHL
50
150
50
18
22
42
14
12
36
11
9
130
26
160
32
22
27
t
High Impedance
Output Enable
Time
115
23
135
27
PZL PZH
R = 1 KΩ
L
20
23
49
15
13
32
14
12
140
28
165
33
R = 1 KΩ
150
50
L
24
28
t
High Impedance
Output Disable
Time
120
24
145
29
PLZ PHZ
R = 1 KΩ
L
20
25
Table 7: Capacitive Characteristics
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
C
Input Capacitance
5
10
10
10
pF
pF
IN
C
Power Dissipation
Capacitance (note
1)
PD
33
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Channel)
= C x V x f + I /6 (per
CC(opr)
PD CC IN CC
5/11
M54HC367
Figure 3: Test Circuit
TEST
SWITCH
t
t
t
, t
Open
PLH PHL
, t
V
CC
PZL PLZ
, t
GND
PZH PHZ
C
R
R
= 50pF/150pF or equivalent (includes jig and probe capacitance)
L
1
T
= 1KΩ or equivalent
= Z
of pulse generator (typically 50Ω)
OUT
Figure 4: Waveform - Propagation Delay Times (f=1MHz; 50% duty cycle)
6/11
M54HC367
Figure 5: Waveform - Output Enable And Disable Times (f=1MHz; 50% duty cycle)
7/11
M54HC367
DILC-16 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
a1
a2
B
2.1
3.00
0.63
1.82
0.40
0.20
20.06
7.36
2.71
3.70
1.14
2.39
0.50
0.30
20.58
7.87
0.083
0.118
0.025
0.072
0.016
0.008
0.790
0.290
0.107
0.146
0.045
0.094
0.020
0.012
0.810
0.310
0.88
0.035
b
0.45
0.254
20.32
7.62
0.018
0.010
0.800
0.300
0.100
0.700
0.310
0.295
b1
D
e
e1
e2
e3
F
2.54
17.65
7.62
7.29
17.78
7.87
17.90
8.12
7.70
3.83
12.1
1.5
0.695
0.300
0.287
0.705
0.320
0.303
0.151
0.476
0.059
7.49
I
K
10.90
1.14
0.429
0.045
L
0056437F
8/11
M54HC367
FPC-16 MECHANICAL DATA
mm.
inch
TYP.
0.272
DIM.
MIN.
6.75
9.76
1.49
0.102
8.76
TYP
6.91
9.94
MAX.
7.06
MIN.
0.266
0.384
0.059
0.004
0.345
MAX.
0.278
0.399
0.077
0.006
0.355
A
B
C
D
E
F
10.14
1.95
0.392
0.127
8.89
1.27
0.43
0.152
9.01
0.005
0.350
0.050
0.017
G
H
L
0.38
6.0
0.48
0.015
0.237
0.738
0.013
0.019
18.75
0.33
22.0
0.43
0.867
0.017
M
N
0.38
4.31
0.015
0.170
G
D
F
H
16
9
A
N
L
1
8
H
M
E
B
C
0016030E
9/11
M54HC367
Table 8: Revision History
Date
Revision
Description of Changes
10-May-2004
1
First Release
10/11
M54HC367
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.
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11/11
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