M54HC75F1R [STMICROELECTRONICS]
4 BIT D TYPE LATCH; 4位D型锁存器
| 型号： | M54HC75F1R |
| 厂家： | 
ST |
| 描述： | 4 BIT D TYPE LATCH |
| 文件： | 总10页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HC75
RAD HARD 4 BIT D TYPE LATCH
■
■
■
■
■
■
■
HIGH SPEED:
= 11ns (TYP.) at V = 6V
t
PD
CC
LOW POWER DISSIPATION:
=2µA(MAX.) at T =25°C
I
CC
A
HIGH NOISE IMMUNITY:
= V = 28% V (MIN.)
V
NIH
NIL
CC
DILC-16
FPC-16
SYMMETRICAL OUTPUT IMPEDANCE:
|I | = I = 4mA (MIN)
OH
OL
BALANCED PROPAGATION DELAYS:
ORDER CODES
PACKAGE
t
t
PLH
PHL
FM
EM
WIDE OPERATING VOLTAGE RANGE:
(OPR) = 2V to 6V
V
DILC
FPC
M54HC75D
M54HC75K
M54HC75D1
M54HC75K1
CC
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 75
■
■
SPACE GRADE-1: ESA SCC QUALIFIED
It contains two groups of 2 bit latches controlled by
an enable input (G1•2 or G3•4). These two latch
groups can be used in different circuits. Each latch
has Q and Q outputs (1Q - 4Q and 1Q - 4Q). The
data applied to the data input is transferred to the
Q and Q outputs when the enable input is taken
high and the outputs will follow the data input as
long as the enable input is kept high. When the
enable input is taken low, the information data
applied to the data input is retained at the outputs.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
■
■
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9203-065
DESCRIPTION
The M54HC75 is an high speed CMOS 4 BIT D
TYPE LATCH fabricated with silicon gate C MOS
technology.
2
PIN CONNECTION
Rev. 1
1/10
June 2004
M54HC75
Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N°
SYMBOL
NAME AND FUNCTION
Complementary Latch
Outputs
1, 14, 11, 8
2, 3, 6, 7
4
1Q to 4Q
1D to 4D
G3 • 4
Data Inputs
Latch Enable Input,
latches 3 and 4
Latch Enable Input,
latches 1 and 2
13
G1 • 2
16, 15, 10, 9
1Q to 4Q
GND
Latch Outputs
12
5
Ground (0V)
V
Positive Supply Voltage
CC
Table 2: Truth Table
INPUTS
OUTPUTS
FUNCTION
Q
D
G
Q
L
H
X
H
H
L
L
H
H
L
Qn
Qn
LATCH
2/10
M54HC75
Figure 3: Logic Diagram
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
V
V
CC
V
DC Input Voltage
-0.5 to V + 0.5
I
CC
V
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
-0.5 to V + 0.5
V
O
CC
I
± 20
± 20
mA
mA
mA
mA
mW
°C
IK
I
OK
I
± 25
O
I
or I
DC V
or Ground Current
CC
± 50
CC
GND
P
Power Dissipation
300
D
T
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
265
stg
T
°C
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
Parameter
Value
Unit
V
Supply Voltage
2 to 6
0 to V
V
V
CC
V
Input Voltage
I
CC
V
Output Voltage
0 to V
CC
V
O
T
Operating Temperature
Input Rise and Fall Time
-55 to 125
0 to 1000
0 to 500
0 to 400
°C
ns
ns
ns
op
V
V
V
= 2.0V
= 4.5V
= 6.0V
CC
CC
CC
t , t
r
f
3/10
M54HC75
Table 5: DC Specifications
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
V
High Level Input
Voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
IH
V
V
V
Low Level Input
Voltage
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
IL
V
High Level Output
Voltage
I =-20 µA
1.9
4.4
5.9
2.0
4.5
6.0
1.9
4.4
1.9
4.4
OH
O
I =-20 µA
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
O
I =-20 µA
5.9
5.9
V
V
O
I =-4.0 mA
4.18 4.31
4.13
5.63
4.10
5.60
O
I =-5.2 mA
5.68
5.8
0.0
0.0
0.0
O
V
Low Level Output
Voltage
I =20 µA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
OL
O
I =20 µA
O
I =20 µA
0.1
0.1
O
I =4.0 mA
0.17 0.26
0.18 0.26
0.33
0.33
0.40
0.40
O
I =5.2 mA
O
I
Input Leakage
Current
I
V = V or GND
6.0
6.0
± 0.1
± 1
± 1
µA
µA
I
CC
I
Quiescent Supply
Current
CC
V = V or GND
2
20
40
I
CC
Table 6: AC Electrical Characteristics (C = 50 pF, Input t = t = 6ns)
L
r
f
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
t
t
Output Transition
Time
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
25
7
75
15
13
110
22
19
125
25
21
75
15
13
50
10
9
95
19
16
140
28
24
155
31
26
95
19
16
65
13
11
30
6
110
22
19
165
33
28
190
38
32
110
22
19
75
15
13
40
8
TLH THL
ns
ns
ns
ns
ns
ns
6
t
t
t
Propagation Delay
Time (DATA - Q)
36
12
10
40
13
11
18
6
PLH PHL
t
Propagation Delay
Time (G-Q)
PLH PHL
t
Minimum Pulse
Width (G)
W(H)
6
t
Minimum Set-up
Time
s
t
Minimum Hold
Time
25
5
h
4
5
7
4/10
M54HC75
Table 7: Capacitive Characteristics
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
C
Input Capacitance
5.0
5
10
10
10
pF
IN
C
Power Dissipation
Capacitance (note
1)
PD
5.0
30
pF
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= C x V x f + I
CC(opr)
PD CC IN CC
Figure 4: Test Circuit
C
R
= 50pF or equivalent (includes jig and probe capacitance)
L
T
= Z
of pulse generator (typically 50Ω)
OUT
5/10
M54HC75
Figure 5: Switching Characteristics Test Waveform (f=1MHz; 50% duty cycle)
6/10
M54HC75
DILC-16 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
a1
a2
B
2.1
3.00
0.63
1.82
0.40
0.20
20.06
7.36
2.71
3.70
1.14
2.39
0.50
0.30
20.58
7.87
0.083
0.118
0.025
0.072
0.016
0.008
0.790
0.290
0.107
0.146
0.045
0.094
0.020
0.012
0.810
0.310
0.88
0.035
b
0.45
0.254
20.32
7.62
0.018
0.010
0.800
0.300
0.100
0.700
0.310
0.295
b1
D
E
e
2.54
e1
e2
F
17.65
7.62
7.29
17.78
7.87
17.90
8.12
7.70
3.83
12.1
1.5
0.695
0.300
0.287
0.705
0.320
0.303
0.151
0.476
0.059
7.49
I
K
10.90
1.14
0.429
0.045
L
0056437F
7/10
M54HC75
FPC-16 MECHANICAL DATA
mm.
inch
TYP.
0.272
DIM.
MIN.
6.75
9.76
1.49
0.102
8.76
TYP
6.91
9.94
MAX.
7.06
MIN.
0.266
0.384
0.059
0.004
0.345
MAX.
0.278
0.399
0.077
0.006
0.355
A
B
C
D
E
F
10.14
1.95
0.392
0.127
8.89
1.27
0.43
0.152
9.01
0.005
0.350
0.050
0.017
G
H
L
0.38
6.0
0.48
0.015
0.237
0.738
0.013
0.019
18.75
0.33
22.0
0.43
0.867
0.017
M
N
0.38
4.31
0.015
0.170
G
D
F
H
16
9
A
N
L
1
8
H
M
E
B
C
0016030E
8/10
M54HC75
Table 8: Revision History
Date
Revision
Description of Changes
01-Jun-2004
1
First Release
9/10
M54HC75
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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10/10
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